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1. 发明授权

US09040178B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US09040178B2
公开(公告)日：2015-05-26
申请号：US12284409
申请日：2008-09-22
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC）或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施方案由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

2. 发明授权

US08747629B2 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US08747629B2
公开(公告)日：2014-06-10
申请号：US12284454
申请日：2008-09-22
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： C23C14/00 , C23C14/32 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

3. 发明授权

US08653615B2 MR device with synthetic free layer structure 有权
标题翻译：具有合成自由层结构的MR器件
公开(公告)号：US08653615B2
公开(公告)日：2014-02-18
申请号：US12313351
申请日：2008-11-19
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/12
摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.
摘要翻译：描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。中心铁磁层的一种可能性是NiFe，但这不是强制性的。

4. 发明授权

US08456781B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08456781B2
公开(公告)日：2013-06-04
申请号：US13561206
申请日：2012-07-30
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , C21D1/04
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，其中FL1的顶表面用弱等离子体蚀刻处理，以实现增强的dR / R，同时保持低RA和TMR或GMR传感器中的低λ。弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

5. 发明授权

US08325448B2 Pinning field in MR devices despite higher annealing temperature 有权
公开(公告)号：US08325448B2
公开(公告)日：2012-12-04
申请号：US12931849
申请日：2011-02-11
申请人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
发明人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
IPC分类号： G11B5/127
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L29/82 , H01L43/08
摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.

6. 发明授权

US08289663B2 Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers 有权
标题翻译：超低RA（电阻x面积）传感器在被钉扎层和自由层之间具有多层非磁性间隔物
公开(公告)号：US08289663B2
公开(公告)日：2012-10-16
申请号：US12150191
申请日：2008-04-25
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08 , Y10T428/1114
摘要： A high performance TMR sensor with a spacer including at least one metal layer such as Cu and one or more MgO layers is disclosed. In addition, there may be a metal dopant in the MgO layer. In an alternative embodiment, the MgO layer may be replaced by other low band gap insulating or semiconductor materials. An ultra-low RA of
摘要翻译：公开了具有包括至少一个金属层如Cu和一个或多个MgO层的间隔物的高性能TMR传感器。此外，MgO层中可能存在金属掺杂剂。在替代实施例中，MgO层可以由其他低带隙绝缘或半导体材料代替。通过本发明的复合间隔物实现了<0.4μohm-cm 2的超低RA与14％的MR，低磁致伸缩和低Hin值约20Oe的组合。 Cu层的厚度为0.1〜10埃，MgO / Cu / MgO / Cu，MgO / Cu / MgO等间隔构造的MgO的厚度为5〜20埃。

7. 发明申请

US20120235258A1 TMR Device with Improved MgO Barrier 审中-公开
标题翻译：具有改善MgO阻挡层的TMR器件
公开(公告)号：US20120235258A1
公开(公告)日：2012-09-20
申请号：US13482017
申请日：2012-05-29
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01F41/307 , B82Y40/00 , G11C11/161 , H01L43/12
摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
摘要翻译：公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。在替代实施例中，在最上层金属层被沉积之前，在MOX1层上形成多个金属氧化物层。所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

8. 发明申请

US20120205757A1 Pinning field in MR devices despite higher annealing temperature 有权
标题翻译：尽管退火温度较高，MR装置中的固定场也是如此
公开(公告)号：US20120205757A1
公开(公告)日：2012-08-16
申请号：US12931849
申请日：2011-02-11
申请人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
发明人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L29/82 , H01L43/08
摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.
摘要翻译：通过使用Ru 4A峰和步骤，在制造期间使钌层的界面粗糙度以及硼和锰扩散到钌层中，使MR器件中的钉扎场显着改善。这使得可以在高达340℃的温度下退火，由此可以同时实现高MR比。

9. 发明授权

US07780820B2 Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
公开(公告)号：US07780820B2
公开(公告)日：2010-08-24
申请号：US11280523
申请日：2005-11-16
申请人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
IPC分类号： C23C14/34
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/307 , Y10T428/1114 , Y10T428/1143
摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

10. 发明申请

US20090194833A1 TMR device with Hf based seed layer 有权
标题翻译：具有Hf基种子层的TMR器件
公开(公告)号：US20090194833A1
公开(公告)日：2009-08-06
申请号：US12319734
申请日：2009-01-12
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： H01L29/82
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10T428/1291
摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.
摘要翻译：公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。

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