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41. 发明授权

US07963825B2 Abrasive, method of polishing target member and process for producing semiconductor device 有权
公开(公告)号：US07963825B2
公开(公告)日：2011-06-21
申请号：US12170587
申请日：2008-07-10
申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
发明人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

42. 发明申请

US20060248804A1 Abrasive, method of polishing target member and process for producing semiconductor device 有权
标题翻译：磨料，抛光目标构件的方法和制造半导体装置的方法
公开(公告)号：US20060248804A1
公开(公告)日：2006-11-09
申请号：US11484611
申请日：2006-07-12
申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
发明人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
摘要翻译：本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i）由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

43. 发明申请

US20050118820A1 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate 有权
公开(公告)号：US20050118820A1
公开(公告)日：2005-06-02
申请号：US10990427
申请日：2004-11-18
申请人： Toshihiko Akahori , Toranosuke Ashizawa , Keizo Hirai , Miho Kurihara , Masato Yoshida , Yasushi Kurata
发明人： Toshihiko Akahori , Toranosuke Ashizawa , Keizo Hirai , Miho Kurihara , Masato Yoshida , Yasushi Kurata
IPC分类号： B24B37/00 , B24B37/04 , B24D3/34 , B44C1/22 , C09G1/02 , C09K3/14 , C09K13/00 , H01L21/302 , H01L21/3105 , H01L21/461
CPC分类号： B24D3/34 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

44. 发明授权

US06420269B2 Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same 失效
标题翻译：用于研磨在基材上形成的绝缘膜的氧化铈研磨剂及其使用方法
公开(公告)号：US06420269B2
公开(公告)日：2002-07-16
申请号：US08930916
申请日：1997-12-30
申请人： Jun Matsuzawa , Yasushi Kurata , Kiyohito Tanno , Yoshio Honma
发明人： Jun Matsuzawa , Yasushi Kurata , Kiyohito Tanno , Yoshio Honma
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C01F17/0043 , C01P2006/12 , H01L2224/32245 , H01L2224/4826 , H01L2224/73215 , H01L2924/12044 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： The invention relates to an abrasive containing a slurry of the cerium oxide grains dispersed in water. The Cerium oxide grains are obtained by adding hydrogen peroxide to an aqueous dispersion of cerium carbonate. The Cerium oxide grains are obtained by oxidizing a precipitate, which is formed through addition of ammonium hydrogencarbonate to an aqueous solution of cerium nitrate, with hydrogen peroxide. The Cerium oxide grains are obtained by neutralizing or alkallfying an aqueous solution of cerium ammonium nitrate.
摘要翻译：本发明涉及含有分散在水中的氧化铈颗粒的浆料的磨料。通过向碳酸铈的水分散液中加入过氧化氢来获得氧化铈颗粒。通过将通过将碳酸氢铵加入到硝酸铈水溶液中形成的沉淀物与过氧化氢氧化来获得氧化铈颗粒。氧化铈颗粒通过中和硝酸铈铵水溶液而得到。

45. 发明授权

US06343976B1 Abrasive, method of polishing wafer, and method of producing semiconductor device 有权
标题翻译：磨料，抛光方法和半导体器件的制造方法
公开(公告)号：US06343976B1
公开(公告)日：2002-02-05
申请号：US09581814
申请日：2000-09-08
申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
发明人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
IPC分类号： B24B100
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
摘要翻译：为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

46. 发明授权

US5667583A Method of producing a single crystal of a rare-earth silicate 失效
标题翻译：制备稀土硅酸盐单晶的方法
公开(公告)号：US5667583A
公开(公告)日：1997-09-16
申请号：US413287
申请日：1995-03-30
申请人： Yasushi Kurata , Kazuhisa Kurashige , Hiroyuki Ishibashi
发明人： Yasushi Kurata , Kazuhisa Kurashige , Hiroyuki Ishibashi
IPC分类号： C30B15/00 , C30B33/00 , C30B15/36
CPC分类号： C30B15/00 , C30B29/34 , C30B33/00 , Y10S117/902 , Y10T117/1044
摘要： A method of growing a single crystal of a rare-earth silicate is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the pulling is conducted along an axis of pulling having a gradient of at least 30.degree. from the b-axis ([010] axis) of the single crystal and a gradient of at least 25.degree. from the c-axis ([001] axis) of the single crystal. The invention also provides a method of machining a single crystal of a rare-earth silicate into a cylindrical form, comprising grinding a cylinder whose axis is directed so as to have a gradient of 0.degree. to 65.degree. from the c-axis ([001] axis) of the single crystal. Further, the invention provides a single crystal of a rare-earth silicate machined into a configuration having at least one plane, wherein the plane most close to the (100) plane of the single crystal has a gradient of at least 5.degree. from the (100) plane.
摘要翻译：公开了一种生长稀土硅酸盐的单晶的方法，其包括在坩埚中加热原料，从而获得原料的熔体，使晶种的下端与熔体接触并将晶种拉到从而生长单晶，并且其中沿着具有从单晶的b轴（[010]轴）至少30°的梯度的拉伸轴进行拉伸，并且从该晶体的至少25°的梯度 c轴（[001]轴）。本发明还提供了将稀土硅酸盐的单晶加工成圆筒状的方法，其特征在于，将从所述c轴取向为0°〜65°的圆柱体（[001] ]轴）。此外，本发明提供了一种加工成具有至少一个平面的构造的稀土硅酸盐的单晶，其中最接近单晶的（100）面的平面具有至少比（ 100）飞机。

47. 发明申请

US20140158196A1 ELEMENT AND PHOTOVOLTAIC CELL 审中-公开
标题翻译：元素和光电池
公开(公告)号：US20140158196A1
公开(公告)日：2014-06-12
申请号：US14233383
申请日：2012-07-24
申请人： Yoshiaki Kurihara , Masato Yoshida , Takeshi Nojiri , Yasushi Kurata , Shuichiro Adachi , Takahiko Kato
发明人： Yoshiaki Kurihara , Masato Yoshida , Takeshi Nojiri , Yasushi Kurata , Shuichiro Adachi , Takahiko Kato
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01B1/22 , H01L31/02245 , Y02E10/50
摘要： An element of the present invention includes a silicon substrate; an electrode which is provided on the silicon substrate and which is a sintered product of a paste composition for an electrode containing a phosphorus-containing copper alloy particle, a glass particle, a solvent and a resin; and a solder layer containing a flux, which is provided on the electrode.
摘要翻译：本发明的元件包括硅衬底; 设置在硅基板上的电极，其是含有含磷铜合金粒子，玻璃粒子，溶剂和树脂的电极用糊料组合物的烧结体; 以及设置在电极上的含有焊剂的焊料层。

48. 发明授权

US08728232B2 Single crystal heat treatment method 有权
标题翻译：单晶热处理方法
公开(公告)号：US08728232B2
公开(公告)日：2014-05-20
申请号：US11374436
申请日：2006-03-14
申请人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
发明人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
IPC分类号： C30B15/14 , C30B21/06
CPC分类号： C30B31/08 , C30B29/34
摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1
摘要翻译：一种单晶热处理方法，其特征在于，在不饱和环境中，在满足下述式（3）所示条件的温度T1（单位：℃）下，加热特定铈掺杂硅酸盐化合物的单晶的工序; 800＆nlE; T1 <（Tm1-550）（3）（其中Tm1（单位：℃）表示单晶的熔点）。

49. 发明授权

US08162725B2 Abrasive, method of polishing target member and process for producing semiconductor device 有权
标题翻译：磨料，抛光目标构件的方法和制造半导体装置的方法
公开(公告)号：US08162725B2
公开(公告)日：2012-04-24
申请号：US11878504
申请日：2007-07-25
申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
发明人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
摘要翻译：为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

50. 发明授权

US07708788B2 Cerium oxide abrasive and method of polishing substrates 失效
标题翻译：氧化铈磨料和抛光底物的方法
公开(公告)号：US07708788B2
公开(公告)日：2010-05-04
申请号：US10960941
申请日：2004-10-12
申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno , Yuuto Ootuki
发明人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno , Yuuto Ootuki
IPC分类号： C09G1/02 , C09G1/04 , C09K3/14
CPC分类号： C09K3/1463 , C01F17/0043 , C01P2004/61 , C01P2004/62 , C01P2006/12 , C09G1/02 , C09K3/1409 , H01L21/02024 , H01L21/02065 , H01L21/31053
摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.
摘要翻译：一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m.2 / g，浆料颗粒的中值粒径为150nm〜600nm。氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

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