会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明申请
    • Apparatus and method for producing single crystal
    • 单晶制造装置及方法
    • US20050217570A1
    • 2005-10-06
    • US10517527
    • 2003-06-12
    • Hirasawa ShigekiMasato IkegawaHiroyuki IshibashiAkihiro Gunji
    • Hirasawa ShigekiMasato IkegawaHiroyuki IshibashiAkihiro Gunji
    • C30B15/00C30B1/00C30B15/14C30B35/00
    • C30B35/00C30B15/14Y10T117/10Y10T117/1068Y10T117/1072Y10T117/1088
    • An apparatus having a crucible (1) for holding a raw material, a heating means (11) for heating the raw material in the crucible (1) and a crystal transporting means (17) for transporting a seed crystal (13) upwards from the inside of the crucible (1), which further comprises a heat conducting member (3) which extends upwards at least from the vicinity of the upper end of the crucible (1), surrounds a single crystal (15) formed, and is made of a material having heat conductivity, and an interface portion radiation heat blocking member (7) for blocking, at least during cooling after the formation of a single crystal, the radiation heat toward an upper portion above the interface between a taper portion (15a) of the formed single crystal (15) connecting with the seed crystal (13) and a straight bulge portion (15b) having a cylindrical shape connecting with the taper portion (15a) of the formed single crystal (15). The use of the apparatus reduces the temperature difference in the radius direction of the single crystal (15), resulting in the reduction of the occurrence of defects or cracks, which leads to the reduction of the fraction defective in production of single crystals.
    • 一种具有用于保持原料的坩埚(1)的装置,用于加热坩埚(1)中的原料的加热装置(11)和用于将晶种(13)向上运送的晶体输送装置(17) 坩埚(1)的内部还包括至少从坩埚(1)的上端附近向上延伸的导热构件(3),围绕形成的单晶(15),并且由 具有导热性的材料和界面部分辐射热阻构件(7),用于至少在形成单晶之后的冷却过程中,朝着锥形部分(15a)之间的界面上方的上部阻挡辐射热, 与所述晶种(13)连接的所形成的单晶(15)和与形成的单晶(15)的锥形部分(15a)连接的圆柱形的直的凸起部分(15b)。 使用该装置可以降低单晶(15)的半径方向的温度差,导致缺陷或裂纹的发生减少,导致单晶生成不良的部分的降低。