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    • 41. 发明申请
    • APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY
    • 用于确定具有旋转或反射对称结构的重叠的装置和方法
    • US20090051917A9
    • 2009-02-26
    • US11227764
    • 2005-09-14
    • Mark Ghinovker
    • Mark Ghinovker
    • G01B11/00
    • G01B11/272G01N21/4785G01N21/9501G03F7/70633H01L21/68H01L21/682H01L23/544Y10S438/975
    • Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.
    • 公开了具有灵活对称特性的覆盖目标和用于测量这些目标的两个或更多个连续层之间的重叠误差的测量技术。 在一个实施例中,目标包括用于测量x和y方向上的重叠误差(或移位)的结构,其中x结构具有与y结构不同的对称中心(COS)。 在另一个实施例中,x和y结构之一是不变的,具有180°旋转,并且x和y结构中的另一个具有镜像对称性。 在一个方面,x和y结构一起是180°旋转的变体。 在又一示例中,用于测量x和/或y方向上的覆盖层的目标包括具有180对称性的第一层上的结构,并且在具有镜像对称性的第二层上的结构。 在另一个实施例中,用于确定x和/或y方向上的覆盖的目标包括第一层上的结构和第二层上的结构,其中第一层上的结构具有由COS的已知量偏移的COS 的第二层结构。 在具体实现中,所公开的目标实施例中的任何一个可以采取设备结构的形式。 在用例中,使用在第一和第二层中的每一个中具有固有的180°旋转对称性或镜像对称性的装置结构来测量第一层和第二层中的覆盖层。 公开了用于对具有灵活对称特性的目标成像和分析获取的图像以确定覆盖或对准误差的技术。
    • 42. 发明授权
    • Apparatus and methods for providing in-chip microtargets for metrology or inspection
    • 用于提供片上微目标以进行计量或检查的装置和方法
    • US07346878B1
    • 2008-03-18
    • US10858836
    • 2004-06-01
    • Avi CohenMark GhinovkerMichael E. Adel
    • Avi CohenMark GhinovkerMichael E. Adel
    • G06F17/50
    • G06F17/5068G06F2217/12Y02P90/265
    • Disclosed are techniques and apparatus for providing metrology or inspection targets in-chip. That is, targets are integrated within the product device or die area. In general terms, the present invention provides techniques for enabling inspection or metrology on targets within the die or active area. Said in another way, target structures are inserted within the die or active area. In one embodiment, a set of rules are provided for integrating test structures within the die. For example, these rules may be implemented by one or more design engineers or by place-and-route tools which automatically generate the die layout pattern and thereafter insert the target structures into the die layout pattern based on these rules. Location data of each target is then retained during the layout generation and provided to one or more inspection or metrology tools and/or metrology engineers so that each target may be found and then inspected or measured.
    • 公开了用于在片内提供计量或检查目标的技术和装置。 也就是说,目标集成在产品设备或模具区域内。 一般来说,本发明提供了用于使得能够对模具或有效区域内的目标进行检查或计量的技术。 以另一种方式说明,目标结构被插入模具或活动区域内。 在一个实施例中,提供了一组规则来整合管芯内的测试结构。 例如,这些规则可以由一个或多个设计工程师或通过自动生成管芯布局图案的放置和布线工具来实现,然后基于这些规则将目标结构插入管芯布局图案中。 然后在布局生成期间保留每个目标的位置数据,并提供给一个或多个检查或计量工具和/或计量工程师,以便可以找到每个目标,然后进行检查或测量。
    • 43. 发明申请
    • Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
    • 用于确定具有旋转或镜像对称性的结构的覆盖物的装置和方法
    • US20070008533A1
    • 2007-01-11
    • US11227764
    • 2005-09-14
    • Mark Ghinovker
    • Mark Ghinovker
    • G01B11/00
    • G01B11/272G01N21/4785G01N21/9501G03F7/70633H01L21/68H01L21/682H01L23/544Y10S438/975
    • Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.
    • 公开了具有灵活对称特性的覆盖目标和用于测量这些目标的两个或更多个连续层之间的重叠误差的测量技术。 在一个实施例中,目标包括用于测量x和y方向上的重叠误差(或移位)的结构,其中x结构具有与y结构不同的对称中心(COS)。 在另一个实施例中,x和y结构之一是不变的,具有180°旋转,并且x和y结构中的另一个具有镜像对称性。 在一个方面,x和y结构一起是180°旋转的变体。 在又一示例中,用于测量x和/或y方向上的覆盖层的目标包括具有180对称性的第一层上的结构,并且在具有镜像对称性的第二层上的结构。 在另一个实施例中,用于确定x和/或y方向上的覆盖的目标包括第一层上的结构和第二层上的结构,其中第一层上的结构具有由COS的已知量偏移的COS 的第二层结构。 在具体实现中,所公开的目标实施例中的任何一个可以采取设备结构的形式。 在用例中,使用在第一和第二层中的每一个中具有固有的180°旋转对称性或镜像对称性的装置结构来测量第一层和第二层中的覆盖层。 公开了用于对具有灵活对称特性的目标成像和分析获取的图像以确定覆盖或对准误差的技术。
    • 44. 发明授权
    • Rotational multi-layer overlay marks, apparatus, and methods
    • 旋转多层重叠标记,装置和方法
    • US08781211B2
    • 2014-07-15
    • US13338061
    • 2011-12-27
    • Mark Ghinovker
    • Mark Ghinovker
    • G06K9/00
    • G03F7/70633G06T7/0004G06T7/32G06T2207/30148
    • In one embodiment, a semiconductor target for determining overlay error, if any, between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of first structures that are invariant for a plurality of first rotation angles with respect to a first center of symmetry (COS) of the first structures and a plurality of second structures that are invariant for a plurality of second rotation angles with respect to a second COS of the second structures. The first rotation angles differ from the second rotation angles, and first structures and second structures are formed on different layers of the substrate or separately generated patterns on a same layer of the substrate.
    • 在一个实施例中,公开了用于确定衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差(如果有的话)的半导体靶。 目标包括至少多个相对于第一结构的第一对称中心(COS)的多个第一旋转角度不变的第一结构和对于多个第二旋转不变的多个第二结构 相对于第二结构的第二COS的角度。 第一旋转角度与第二旋转角度不同,并且第一结构和第二结构形成在基板的不同层上或在基底的相同层上分开产生的图案。
    • 46. 发明申请
    • WAFERLESS RECIPE OPTIMIZATION
    • 无轮胎优化
    • US20080094639A1
    • 2008-04-24
    • US11552471
    • 2006-10-24
    • Amir WidmannMark GhinovkerDror Francis
    • Amir WidmannMark GhinovkerDror Francis
    • G01B11/24
    • G03F7/70633G03F7/70508G03F7/70625
    • Disclosed are apparatus and methods for optimizing a metrology tool, such as an optical or scanning electron microscope so that minimum human intervention is achievable during the optimization. In general, a set of specifications and an initial input data are initially provided for a particular target. The specifications provide limits for characteristics of images that are to be measured by the metrology tool. The metrology tool is then automatically optimized for measuring the particular target so as to meet one or more of the provided specifications without further significant human intervention with respect to the metrology tool. In one aspect, the input data provided prior to the automated optimization procedure includes a plurality of target locations and a synthetic image of the particular target.
    • 公开了用于优化诸如光学或扫描电子显微镜的计量工具的装置和方法,使得在优化期间可以实现最小的人为干预。 通常,最初为特定目标提供一组规范和初始输入数据。 这些规格对由计量工具测量的图像的特性提供了限制。 然后,度量工具自动优化用于测量特定目标,以满足一个或多个所提供的规格,而不会对计量工具进行更多的人为干预。 在一个方面,在自动优化过程之前提供的输入数据包括多个目标位置和特定目标的合成图像。
    • 48. 发明授权
    • Use of overlay diagnostics for enhanced automatic process control
    • 使用覆盖诊断功能进行增强的自动过程控制
    • US07111256B2
    • 2006-09-19
    • US10438963
    • 2003-05-14
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • G06F17/50
    • G03F7/705G03F7/70516G03F7/70633
    • Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
    • 公开了分析覆盖目标质量的方法和装置。 在一个实施例中,公开了一种从覆盖目标提取数据的方法。 首先,提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号,从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如,系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号,从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声,例如粒状背景。 在其他实施例中,然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。
    • 49. 发明授权
    • Use of overlay diagnostics for enhanced automatic process control
    • 使用覆盖诊断功能进行增强的自动过程控制
    • US06928628B2
    • 2005-08-09
    • US10438962
    • 2003-05-14
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid Tulipman
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid Tulipman
    • G03F7/20G06F17/50G06K9/00H01L21/66
    • G03F7/705G03F7/70516G03F7/70633
    • Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
    • 公开了分析覆盖目标质量的方法和装置。 在一个实施例中,公开了一种从覆盖目标提取数据的方法。 首先,提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号,从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如,系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号,从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声,例如粒状背景。 在其他实施例中,然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。
    • 50. 发明申请
    • ROTATIONAL MULTI-LAYER OVERLAY MARKS, APPARATUS, AND METHODS
    • 旋转多层叠加标记,装置和方法
    • US20130163852A1
    • 2013-06-27
    • US13338061
    • 2011-12-27
    • Mark Ghinovker
    • Mark Ghinovker
    • G06K9/00H01L21/71H01L23/544
    • G03F7/70633G06T7/0004G06T7/32G06T2207/30148
    • In one embodiment, a semiconductor target for determining overlay error, if any, between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of first structures that are invariant for a plurality of first rotation angles with respect to a first center of symmetry (COS) of the first structures and a plurality of second structures that are invariant for a plurality of second rotation angles with respect to a second COS of the second structures. The first rotation angles differ from the second rotation angles, and first structures and second structures are formed on different layers of the substrate or separately generated patterns on a same layer of the substrate.
    • 在一个实施例中,公开了用于确定衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差(如果有的话)的半导体靶。 目标包括至少多个相对于第一结构的第一对称中心(COS)的多个第一旋转角度不变的第一结构,以及对于多个第二旋转不变的多个第二结构 相对于第二结构的第二COS的角度。 第一旋转角度与第二旋转角度不同,并且第一结构和第二结构形成在基板的不同层上或在基底的相同层上分开产生的图案。