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41. 发明专利

JP2014078564A Connection structure of electrode 审中-公开
标题翻译：电极连接结构
公开(公告)号：JP2014078564A
公开(公告)日：2014-05-01
申请号：JP2012224354
申请日：2012-10-09
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： KAMIYA KAZUNOBU , HIGASHIMOTO SHIGEKAZU , TAKEUCHI KAZUYOSHI , MASUTANI MUNEHIKO
IPC分类号： H01L21/60 , H01L23/48 , H01L25/07 , H01L25/18
CPC分类号： H01L24/01
摘要： PROBLEM TO BE SOLVED: To provide a connection structure of an electrode which can secure a junction area even if positions of a first electrode plate at the chip side and a second electrode plate at the external terminal side are misaligned.SOLUTION: A lower electrode plate 30 at the chip side is connected with an upper electrode plate 50 at the external terminal side through an intermediate member 40. A through hole 51 is formed at the upper electrode plate 50, and a protrusion 41 inserted into the through hole 51 is formed at the lower electrode plate 30. At least a space between inner surfaces of the protrusion 41 and the through hole 51 is filled with solder 140.
摘要翻译：要解决的问题：即使在芯片侧的第一电极板的位置和外部端子侧的第二电极板的位置不对准，也能够确保接合面积的电极的连接结构。解决方案：下部电极板 30在芯片侧通过中间构件40在外部端子侧与上部电极板50连接。在上部电极板50上形成通孔51，并且在通孔51中形成有插入通孔51的突起41 下部电极板30.突起41的内表面和通孔51之间的至少一个空间填充有焊料140。

42. 发明专利

JP2014057408A Capacitor storage unit 有权
标题翻译：电容器存储单元
公开(公告)号：JP2014057408A
公开(公告)日：2014-03-27
申请号：JP2012199737
申请日：2012-09-11
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： KAMIYA KAZUNOBU , HIGASHIMOTO SHIGEKAZU , MASUTANI MUNEHIKO , TAKEUCHI KAZUYOSHI
IPC分类号： H02M7/48 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To achieve downsizing while inhibiting heat conduction from a discharge resistor to a capacitor.SOLUTION: A capacitor storage unit 20 has a housing 23 having a square box shape. A capacitor 21 and a discharge resistor 22 are stored in the housing 23. A first bracket 31 which presses the discharge resistor 22 to an inner surface of the housing 23 is provided between the discharge resistor 22 and the capacitor 21. A second bracket 41 is provided between the first bracket 31 and the capacitor 21. A space S is formed between the first bracket 31 and the second bracket 41. Air exists in the space S.
摘要翻译：要解决的问题：在抑制从放电电阻到电容器的热传导的同时实现小型化。解决方案：电容器存储单元20具有方形盒形状的壳体23。电容器21和放电电阻22被存储在壳体23中。在放电电阻器22和电容器21之间设置有将放电电阻器22按压到壳体23的内表面的第一支架31。设置在第一支架31和电容器21之间。空间S形成在第一托架31和第二托架41之间。空间S.

43. 发明专利

JP2014053457A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2014053457A
公开(公告)日：2014-03-20
申请号：JP2012197105
申请日：2012-09-07
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： MASUTANI MUNEHIKO , HIGASHIMOTO SHIGEKAZU
IPC分类号： H01L23/36 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/40 , H01L2224/40137 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/00 , H01L2224/37099 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve cooling efficiency for a semiconductor element.SOLUTION: A semiconductor module 10 has an insulating substrate 11 as an insulating layer. A first wiring metal plate 13 and a metal plate 14 are formed on a top surface of the insulating substrate 11. First semiconductor elements 21 and 22 are bonded onto a top surface of the first wiring metal plate 13, and an output electrode 32 is bonded onto a top surface of the metal plate 14. A second wiring metal plate 25 is bonded onto top surfaces of the first semiconductor elements 21 and 22 and the top surface of the metal plate 14 via solder layers 23 and 24. Second semiconductor elements 26 and 27 are bonded to the second wiring metal plate 25. The solder layer 23 and the first semiconductor elements 21 and 22 form a first heat transmission path for transmitting heat generated by the second semiconductor elements 26 and 27 to the first wiring metal plate 13. The output electrode 32 and the solder layer 24 form a second heat transmission path for transmitting heat generated by the second semiconductor elements 26 and 27 to the metal plate 14.
摘要翻译：要解决的问题：提高半导体元件的冷却效率。解决方案：半导体模块10具有作为绝缘层的绝缘基板11。第一布线金属板13和金属板14形成在绝缘基板11的上表面上。第一半导体元件21和22被接合到第一布线金属板13的顶表面上，并且输出电极32被接合在金属板14的上表面上。第二配线金属板25通过焊料层23和24接合到第一半导体元件21,22的顶表面和金属板14的顶表面。第二半导体元件26和 27焊接到第二布线金属板25.焊料层23和第一半导体元件21和22形成用于将由第二半导体元件26和27产生的热量传递到第一布线金属板13的第一热传输路径。输出电极32和焊料层24形成用于将由第二半导体元件26和27产生的热量传递到金属板14的第二传热路径。

44. 发明专利

JP2014036558A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014036558A
公开(公告)日：2014-02-24
申请号：JP2012178473
申请日：2012-08-10
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： KAMIYA KAZUNOBU , HIGASHIMOTO SHIGEKAZU , MASUTANI MUNEHIKO , TAKEUCHI KAZUYOSHI
IPC分类号： H02M7/48 , H01L23/40 , H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in assemblability of a bus bar for lead-out with a terminal of a first semiconductor module and a terminal of a second semiconductor module which are arranged on a liquid-cooled cooler.SOLUTION: A semiconductor device comprises: semiconductor modules 30, 31, 32, 40, 41, 42 arranged on a top surface and an undersurface of a liquid-cooled cooler 20; a bus bar 50 including a confluence part 53 which converges at a point equidistant from a pair of fastening parts 51, 52 connected to a terminal 70 of a first semiconductor module and terminal 71 of a second semiconductor module extends in a direction apart from the liquid-cooled cooler 20; and a stopper 60 arranged at the fastening parts 51, 52 of the bus bar into which bolts 80, 81 are threaded to fasten the fastening parts 51, 52 and the terminals 70, 71.
摘要翻译：要解决的问题：提供一种半导体装置，其具有用于引出的汇流条与第一半导体模块的端子和布置在液冷式冷却器上的第二半导体模块的端子的组装性优异的半导体装置。解决方案：A 半导体器件包括：布置在液冷式冷却器20的顶表面和下表面上的半导体模块30,31,32,40,41,42; 汇流条50包括汇合在与连接到第一半导体模块的端子70的一对紧固部分51,52等距的点处的汇合部分53和第二半导体模块的端子71沿与液体相反的方向延伸冷却器20; 以及设置在母线的紧固部51,52处的螺栓80,81螺纹连接到紧固部51,52和端子70,71的止动件60。

45. 发明专利

JP2013197162A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013197162A
公开(公告)日：2013-09-30
申请号：JP2012060269
申请日：2012-03-16
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： MASUTANI MUNEHIKO , HIGASHIMOTO SHIGEKAZU , TAKEUCHI KAZUYOSHI , KAMIYA KAZUNOBU
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which a semiconductor element and a metal plate for an electrode are successfully bonded.SOLUTION: A semiconductor device comprises a filling hole 16 which is formed on an upper electrode 14 and which penetrates in a board thickness direction. The filling hole 16 is formed as a stage structure composed of a first hole part 17 and a second hole part 18 having an opening width wider than that of the first hole part 17. This leads to increase in bulk of the filling hole 16 by the second hole part 18. Accordingly, because a solder amount to be filled in the filling hole 16 varies depending on variation of a distance between a semiconductor element 12 and the upper electrode 14, the semiconductor element 12 and the upper electrode 14 can be credibly bonded.
摘要翻译：要解决的问题：提供一种高可靠性的半导体元件和用于电极的金属板成功地结合的半导体器件。解决方案：半导体器件包括填充孔16，其形成在上电极14上并且穿透板厚度方向。填充孔16形成为由具有比第一孔部17的开口宽度宽的开口宽度的第一孔部17和第二孔部18构成的平台结构。这导致填充孔16的体积增加因此，由于要填充在填充孔16中的焊料量根据半导体元件12和上部电极14之间的距离的变化而变化，所以半导体元件12和上部电极14可以可靠地结合。

46. 发明专利

JP2013197161A Bonded structure using conductive adhesive 审中-公开
标题翻译：使用导电胶粘结结构
公开(公告)号：JP2013197161A
公开(公告)日：2013-09-30
申请号：JP2012060268
申请日：2012-03-16
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： MASUTANI MUNEHIKO , HIGASHIMOTO SHIGEKAZU
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To improve heat transfer performance between bonded objects.SOLUTION: In a bonded structure using a conductive adhesive, when a substrate 11 and a semiconductor element 12 are bonded by an adhesive layer 13 composed of a conductive adhesive, a plurality of concavities 15 are formed on a surface of the substrate 11. The concavities 15 are formed in size of not more than an average grain diameter of silver fillers 17 for increasing the number of contacting parts with the silver fillers 17 included in the adhesive layer 13.
摘要翻译：要解决的问题：提高粘合物体之间的传热性能。解决方案：在使用导电粘合剂的接合结构中，当通过由导电粘合剂构成的粘合剂层13将基板11和半导体元件12接合时，凹部15形成在基板11的表面上。凹部15形成为不大于银填料17的平均粒径的尺寸，用于增加与粘合剂层13中包含的银填料17的接触部分的数量。

47. 发明专利

JP2013183024A Semiconductor device and semiconductor apparatus 审中-公开
标题翻译：半导体器件和半导体器件
公开(公告)号：JP2013183024A
公开(公告)日：2013-09-12
申请号：JP2012045895
申请日：2012-03-01
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： MASUTANI MUNEHIKO , TAKEUCHI KAZUYOSHI , HIGASHIMOTO SHIGEKAZU , KAMIYA KAZUNOBU , ISHIKAWA JUN
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/32245 , H01L2224/34 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor apparatus which have high design flexibility.SOLUTION: A semiconductor element 20 is sealed by a resin 60 and is disposed in the resin 60. A source electrode material 30 is joined to the semiconductor element 20 and has a source pad 31 exposed on an upper surface of the resin 60. A drain electrode material 40 is joined to the semiconductor element 20 and has a drain pad 41 exposed on a lower surface of the resin 60. A gate electrode material 50 is joined to the semiconductor element 20 at the one end side and has gate pads 51, 52 which are respectively exposed on the upper surface and the lower surface of the resin 60 at the other end side.
摘要翻译：要解决的问题：提供具有高设计灵活性的半导体器件和半导体器件。解决方案：半导体元件20由树脂60密封并设置在树脂60中。源电极材料30连接到半导体元件20并且具有暴露在树脂60的上表面上的源极焊盘31.漏电极材料40接合到半导体元件20，并且具有暴露在树脂60的下表面上的漏极焊盘41.栅电极材料 50在一端侧连接到半导体元件20，并且具有在另一端侧分别暴露在树脂60的上表面和下表面上的栅极焊盘51,52。

48. 发明专利

JP2013175682A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013175682A
公开(公告)日：2013-09-05
申请号：JP2012040661
申请日：2012-02-27
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： MASUTANI MUNEHIKO , HIGASHIMOTO SHIGEKAZU
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/49111 , H01L2224/49175 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily pull out a signal line.SOLUTION: A semiconductor device comprises: a common electrode block 40 provided so as to be opposite to a first electrode block 30; a transistor chip 80 and a diode chip 81 which are arranged between the first electrode block 30 and the common electrode block 40, and bonded to the first electrode block 30 and the common electrode block 40; a second electrode block 50 provided so as to be opposite to the common electrode block 40; and a transistor chip 90 and a diode chip 91 which are arranged between the common electrode block 40 and the second electrode block 50, and bonded to the common electrode block 40 and the second electrode block 50. The first electrode block 30 and the common electrode block 40 are arranged in an offset manner such that a gate pad 85 of the transistor chip 80 is not opposed to the common electrode block 40.
摘要翻译：要解决的问题：提供一种可以容易地拉出信号线的半导体器件。解决方案：一种半导体器件包括：与第一电极块30相对设置的公共电极块40; 布置在第一电极块30和公共电极块40之间并结合到第一电极块30和公共电极块40的晶体管芯片80和二极管芯片81; 设置为与公共电极块40相对的第二电极块50; 以及设置在公共电极块40和第二电极块50之间并结合到公共电极块40和第二电极块50的晶体管芯片90和二极管芯片91.第一电极块30和公共电极块40以偏移方式布置，使得晶体管芯片80的栅极焊盘85不与公共电极块40相对。

49. 发明专利

JP2012081481A Connection structure of electrode in electronic component 审中-公开
标题翻译：电子元件电极连接结构
公开(公告)号：JP2012081481A
公开(公告)日：2012-04-26
申请号：JP2010227518
申请日：2010-10-07
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： KAMIYA KAZUNOBU , TAKEUCHI MASAMI , HIGASHIMOTO SHIGEKAZU , SATO HARUMITSU , ISHIZAKI TAKUYA , MASUTANI MUNEHIKO
IPC分类号： B23K1/14 , B23K1/00 , B23K101/40 , H01L21/60 , H01L23/48
CPC分类号： H01L24/33 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a connection structure of an electrode in an electronic component, which does not need to maintain the clearance between an upper electrode and a joined member to a clearance in which a capillary phenomenon occurs and which is capable of enhancing the joint strength of the joined member with the upper electrode.SOLUTION: The electrode connection structure in the electronic component includes: a base 11 with planate upper face; a semiconductor element 12 with planate surface as the joined member, provided with the first and second electrodes 13 and 14; an upper platy electrode 15 spacing from the semiconductor element 12; and a solder joining the element 12 and the upper electrode 15. The side faces 15C to 15E of the upper electrode 15 are formed with an inclined plane extending outside from a lower face 15B toward an upper face 15A. The lower face 15B of the upper electrode 15 is arranged parallel to the second electrode 14 of the semiconductor element 12, and the side faces 15C to 15E are arranged facing the second electrode 14.
摘要翻译：要解决的问题：为了提供电子部件中的电极的连接结构，其不需要将上部电极和接合部件之间的间隙保持为发生毛细管现象的间隙，并且能够提高接合部件与上部电极的接合强度。解决方案：电子部件中的电极连接结构包括：具有平面上表面的基部11; 设置有第一电极13和第二电极14的半导体元件12，其具有作为连接构件的平面表面; 与半导体元件12间隔开的上板状电极15; 以及焊接元件12和上电极15的焊料。上电极15的侧面15C〜15E形成有从下表面15B向上表面15A延伸的倾斜面。上电极15的下表面15B平行于半导体元件12的第二电极14设置，并且侧面15C至15E被布置成面对第二电极14.版权所有（C）2012，JPO＆INPIT

50. 发明专利

JP2012019033A Soldering jig 审中-公开
标题翻译：焊接大
公开(公告)号：JP2012019033A
公开(公告)日：2012-01-26
申请号：JP2010154979
申请日：2010-07-07
申请人： Toyota Industries Corp , 株式会社豊田自動織機
发明人： TAKEUCHI MASAMI , HIGASHIMOTO SHIGEKAZU , ISHIZAKI TAKUYA , MASUTANI MUNEHIKO
IPC分类号： H01L21/60 , B23K3/00 , B23K31/02 , B23K101/40 , H05K3/34
CPC分类号： H01L2224/34 , H01L2224/376 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a soldering jig which prevents solder connecting a first component and a second component from remelting when a third component is soldered to the first component and the second component, which are already soldered.SOLUTION: An upper electrode 54 is heated by heating beam emitters 31 and 32. A semiconductor element 51 and a heat spreader 52 are heated at a temperature, which solder 53 connecting the semiconductor element 51 with the heat spreader 52 is not remelted, by a heating plate 30 and a lower jig 21. Then, the upper electrode 54 is soldered to the semiconductor element 51 and the heat spreader 52, which are already soldered.
摘要翻译：要解决的问题：提供一种焊接夹具，其将第三部件焊接到已经焊接的第一部件和第二部件时防止第一部件和第二部件的焊接连接重熔。解决方案：通过加热光束发射器31和32来加热上电极54.半导体元件51和散热器52在连接半导体元件51与散热器52的焊料53不被重熔的温度下被加热通过加热板30和下夹具21.然后，将上电极54焊接到已经焊接的半导体元件51和散热器52。版权所有（C）2012，JPO＆INPIT

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