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41. 发明授权

US5891758A Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US5891758A
公开(公告)日：1999-04-06
申请号：US962395
申请日：1997-10-31
申请人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
发明人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
IPC分类号： H01L23/12 , H01L21/56 , H01L21/68 , H01L23/31 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/568 , H01L21/565 , H01L23/3107 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49109 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/18165 , Y10T29/49169
摘要： A method of manufacturing a semiconductor device includes the steps of: mounting a semiconductor chip on a holding board having electrode accommodation recesses formed thereon, and mounting electrode members to the electrode accommodation recesses, the electrode members being formed separately from the semiconductor element; electrically connecting electrode pads formed on the semiconductor chip with the electrode members; forming a resin package for sealing the semiconductor chip on the holding board by using a die, the holding board serving as a part of the die; and separating the resin package including the electrode members from the holding board. A semiconductor device includes: a semiconductor chip; a resin package for sealing the semiconductor chip; electrode members which are embedded in and held by the resin package and which are partly exposed from a mounting surface so as to form external connection terminals; and connecting parts electrically connecting electrode pads on the semiconductor chip with the electrode members.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将半导体芯片安装在其上形成有电极容纳凹部的保持板上，以及将电极构件安装到电极容置凹部，电极构件与半导体元件分开形成; 将形成在半导体芯片上的电极焊盘与电极部件电连接; 通过使用模具形成用于将所述保持板上的半导体芯片密封的树脂封装，所述保持板用作所述管芯的一部分; 以及将包括电极构件的树脂封装从保持板分离。半导体器件包括：半导体芯片; 用于密封半导体芯片的树脂封装; 电极构件，其嵌入并保持在树脂封装中，并且从安装表面部分露出以形成外部连接端子; 以及将半导体芯片上的电极焊盘与电极部件电连接的部分。

42. 发明授权

US5751628A Ferroelectric memory devices and method for testing them 失效
标题翻译：铁电存储器件及其测试方法
公开(公告)号：US5751628A
公开(公告)日：1998-05-12
申请号：US700240
申请日：1996-08-20
申请人： Hiroshige Hirano , Nobuyuki Moriwaki , Tetsuji Nakakuma , Toshiyuki Honda , George Nakane
发明人： Hiroshige Hirano , Nobuyuki Moriwaki , Tetsuji Nakakuma , Toshiyuki Honda , George Nakane
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A memory cell comprises a ferroelectric capacitor, first main memory cells are connected to a first bit line, a first reference memory cell is connected to a second bit line, second main memory cells are connected to the second bit line, and a second reference memory cell is connected to the first bit line. When a first operation mode is selected by a control circuit comprising NAND gates and NOR gates, first main memory cells and first reference memory cell are selected, and when a second operation mode is selected, first main memory cells and second main memory cells are selected. Thus, by switching the operation between the two operation modes, a ferroelectric memory device that has stable operation at a low voltage and high integration at a high voltage is provided.
摘要翻译：存储单元包括铁电电容器，第一主存储单元连接到第一位线，第一参考存储单元连接到第二位线，第二主存储单元连接到第二位线，第二参考存储器单元连接到第一位线。当通过包括NAND门和NOR门的控制电路选择第一操作模式时，选择第一主存储单元和第一参考存储单元，并且当选择第二操作模式时，选择第一主存储单元和第二主存储单元。因此，通过切换两种操作模式之间的操作，提供了在低电压下稳定操作并且在高电压下高集成度的铁电存储器件。

43. 发明授权

US5706242A Semiconductor device having a controllable voltage supply 失效
标题翻译：具有可控电压源的半导体器件
公开(公告)号：US5706242A
公开(公告)日：1998-01-06
申请号：US697508
申请日：1996-08-26
申请人： Hiroshige Hirano , Toshiyuki Honda
发明人： Hiroshige Hirano , Toshiyuki Honda
IPC分类号： G11C5/14 , G11C7/06 , G11C16/26 , G05F1/40
CPC分类号： G11C7/067 , G11C16/26 , G11C5/143 , G11C2207/063
摘要： A semiconductor device includes a nonvolatile memory cell and a current detecting type sense amplifier for detecting a current flowing through a data line into the memory cell. The semiconductor device is further provided with an element for outputting a first voltage detecting signal when a detected supply voltage exceeds a set value and outputting a second voltage detecting signal when the detected supply voltage does not exceed the set value. The sense amplifier includes an element for switching a dependent characteristic of a level sensing current upon the supply voltage to be a higher response to the first voltage detecting signal. Thus, error reading of a data from the memory cell, which can be otherwise caused under application of a low supply voltage, can be avoided.
摘要翻译：半导体器件包括非易失性存储单元和电流检测型读出放大器，用于检测流过存储单元的数据线的电流。半导体器件还设置有用于当检测到的电源电压超过设定值时输出第一电压检测信号并在检测到的电源电压未超过设定值时输出第二电压检测信号的元件。感测放大器包括用于在电源电压上切换电平感测电流的相关特性以对第一电压检测信号作出较高响应的元件。因此，可以避免在应用低电源电压下可能导致来自存储单元的数据的错误读取。

44. 发明授权

US09150396B2 Electric-vehicle control device, and electric vehicle and forklift truck having the same 有权
标题翻译：电动车控制装置，以及具有相同功能的电动车和叉车
公开(公告)号：US09150396B2
公开(公告)日：2015-10-06
申请号：US13498397
申请日：2010-04-12
申请人： Ryuichi Umehara , Osamu Nakakita , Masataka Kawaguchi , Toshiyuki Honda , Wataru Mizunuma
发明人： Ryuichi Umehara , Osamu Nakakita , Masataka Kawaguchi , Toshiyuki Honda , Wataru Mizunuma
IPC分类号： B60K1/00 , B66F9/24 , B60L15/20 , H02P29/00
CPC分类号： B66F9/24 , B60L11/1803 , B60L11/1805 , B60L15/20 , B60L15/2045 , B60L2200/42 , B60L2220/12 , B60L2220/14 , B60L2220/16 , B60L2220/20 , B60L2220/42 , B60L2220/46 , B60L2240/12 , B60L2240/18 , B60L2240/24 , B60L2240/421 , B60L2240/423 , B60L2250/26 , B60L2270/145 , H02P29/50 , Y02T10/642 , Y02T10/645 , Y02T10/646 , Y02T10/7005 , Y02T10/7275 , Y02T10/7283
摘要： The electric-vehicle control device is used in an electric vehicle which is provided with a vehicle body having a driving tire and an axle shaft and with a driving motor which imparts torque to the driving tire. The electric-vehicle control device issues a motor control command to the driving motor. The electric-vehicle control device is provided with a control unit, and the control unit gives feedback control to the driving motor by vibration parameters indicating vertical vibration of the electric vehicle at the center of the axle shaft.
摘要翻译：电动车辆控制装置用于设置有具有驱动轮胎和车轴的车身的电动车辆，以及向驱动轮胎施加扭矩的驱动电动机。电动车辆控制装置向驱动电动机发出电动机控制命令。电动车辆控制装置设置有控制单元，并且控制单元通过表示电动车辆在车轴中心的垂直振动的振动参数向驱动电机提供反馈控制。

45. 发明授权

US08661186B2 Nonvolatile memory device, access device, and nonvolatile memory system 有权
标题翻译：非易失性存储器件，存取器件和非易失性存储器系统
公开(公告)号：US08661186B2
公开(公告)日：2014-02-25
申请号：US12374672
申请日：2007-07-26
申请人： Takuji Maeda , Toshiyuki Honda , Masahiro Nakanishi , Tadashi Ono , Tatsuya Adachi , Isao Kato
发明人： Takuji Maeda , Toshiyuki Honda , Masahiro Nakanishi , Tadashi Ono , Tatsuya Adachi , Isao Kato
IPC分类号： G11C16/10 , G06F12/02 , G06F3/06
CPC分类号： G06F3/0664 , G06F3/0605 , G06F3/061 , G06F3/0679 , G06F12/0246
摘要： An access device 100 includes an access speed information part 112 for informing an access speed required for data recording by the access device 100 to a nonvolatile memory device 200. The nonvolatile memory device includes an access condition determination part 212 for determining an access condition required for meeting the informed access speed and an access area determination unit 213 for determining an access area according to the determined access condition. The access device 100 informs the required access speed to the nonvolatile memory device 200 in advance so that the access condition determination part 212 and the access area determination part 213 in the nonvolatile memory device 200 realize data recording which meets the access speed informed in advance upon the data recording. Thus, it is possible to access all the nonvolatile memory devices at a desired speed regardless of difference in characteristics of the recording speed of each of the nonvolatile memory devices.
摘要翻译：访问装置100包括访问速度信息部分112，用于将访问装置100的数据记录所需的访问速度通知给非易失性存储装置200.非易失性存储装置包括访问条件确定部分212，用于确定访问条件满足通知访问速度的访问区域确定单元213，用于根据确定的访问条件确定访问区域。访问装置100预先向非易失性存储装置200通知所需的访问速度，使得非易失性存储装置200中的访问条件确定部212和访问区域确定部213实现满足预先通知的访问速度的数据记录数据记录。因此，无论每个非易失性存储器件的记录速度的特性差如何，都可以以所需的速度访问所有非易失性存储器件。

46. 发明授权

US08413016B2 Nonvolatile memory device and controller for judging a normal or anomalous condition of an error-corrected bit pattern 有权
标题翻译：用于判断错误校正的位模式的正常或异常状态的非易失性存储器件和控制器
公开(公告)号：US08413016B2
公开(公告)日：2013-04-02
申请号：US12768171
申请日：2010-04-27
申请人： Toshiyuki Honda
发明人： Toshiyuki Honda
IPC分类号： G11C29/00
CPC分类号： G06F11/0763 , G06F11/1068 , H03M13/15 , H03M13/1515 , H03M13/152 , H03M13/27
摘要： In a nonvolatile memory device of the present application, when data of each write unit is read from a nonvolatile memory, an all-clear detector detects whether the read data is already cleared, and a control portion judges whether a flag is already written into a written flag area of the data that has been descrambled by a descrambler and then corrected by an error detection and correction portion. Using a scramble pattern that is generated by a scramble pattern generator and corresponds to the written flag area, a predetermined bit pattern is scrambled to a state that differs from the cleared state.
摘要翻译：在本申请的非易失性存储器件中，当从非易失性存储器读取每个写入单元的数据时，全清晰检测器检测读取的数据是否已经被清除，并且控制部分判断标志是否已被写入到已经由解扰器解扰的数据的写入标志区域，然后由错误检测和校正部分校正。使用由加密模式生成器产生并对应于写入的标志区域的扰频模式，将预定位模式加扰到与清除状态不同的状态。

47. 发明授权

US08214714B2 Nonvolatile storage device, controller of nonvolatile memory, and nonvolatile storage system 失效
标题翻译：非易失性存储设备，非易失性存储器的控制器和非易失性存储系统
公开(公告)号：US08214714B2
公开(公告)日：2012-07-03
申请号：US11909311
申请日：2006-03-22
申请人： Toshiyuki Honda
发明人： Toshiyuki Honda
IPC分类号： G06F13/00 , H03M13/00
CPC分类号： G06F21/78 , G06F12/0246 , G06F2212/7206 , G06F2212/7208
摘要： A nonvolatile storage device includes a nonvolatile memory for storing data such as a flash memory, and a controller for controlling writing or reading of data to or from the nonvolatile memory. The nonvolatile memory stores control information (control program, control parameter) specifying a method of controlling writing or reading of data to or from the nonvolatile memory. The controller determines a type of the nonvolatile memory, and acquires the control information from the nonvolatile memory according to an acquisition procedure corresponding to the type of the nonvolatile memory, and stores (loads) the control information.
摘要翻译：非易失性存储装置包括用于存储诸如闪存的数据的非易失性存储器，以及用于控制向非易失性存储器写入数据或从非易失性存储器读取数据的控制器。非易失性存储器存储控制信息（控制程序，控制参数），其指定控制向非易失性存储器写入或读取数据的方法。控制器确定非易失性存储器的类型，并且根据与非易失性存储器的类型对应的获取过程从非易失性存储器获取控制信息，并且存储（加载）控制信息。

48. 发明授权

US08169848B2 Nonvolatile memory device, nonvolatile memory system, and access device 有权
标题翻译：非易失存储器件，非易失性存储器系统和存取器件
公开(公告)号：US08169848B2
公开(公告)日：2012-05-01
申请号：US12374670
申请日：2007-07-26
申请人： Toshiyuki Honda , Masahiro Nakanishi , Hirofumi Nakagaki
发明人： Toshiyuki Honda , Masahiro Nakanishi , Hirofumi Nakagaki
IPC分类号： G11C5/14
CPC分类号： H04N1/00281 , H04N1/00315 , H04N2101/00 , H04N2201/0039 , H04N2201/0055 , H04N2201/0087 , H04W52/0274
摘要： Power consumption required for making a nonvolatile storage device having a radio communication function operate as a file server for a radio host device is great for a host device which supplies the power. The present invention enables a user to operate a host device to which the nonvolatile storage device having the radio communication function is attached so as to activate and inactivate the radio communication function of the nonvolatile storage device. This reduces unnecessary power consumption by the radio communication function.
摘要翻译：制造具有无线电通信功能的非易失性存储设备所需的功耗作为无线电主机设备的文件服务器操作对于提供电力的主机设备而言是很大的。本发明使得用户能够操作具有无线电通信功能的非易失性存储设备所附接的主机设备，以激活和停用非易失性存储设备的无线电通信功能。这减少了无线电通信功能的不必要的功耗。

49. 发明授权

US08009222B2 Image pickup apparatus and method of manufacturing the same 有权
标题翻译：摄像装置及其制造方法
公开(公告)号：US08009222B2
公开(公告)日：2011-08-30
申请号：US11338856
申请日：2006-01-25
申请人： Naoyuki Watanabe , Toshiyuki Honda , Noboru Hayasaka
发明人： Naoyuki Watanabe , Toshiyuki Honda , Noboru Hayasaka
IPC分类号： H04N5/225 , H04N11/04
CPC分类号： H04N5/2254
摘要： To provide an image pickup apparatus with excellent optical characteristics as well as high reliability and a method of manufacturing the same, capable of efficiently manufacturing the image pickup apparatus in large quantities. The image pickup apparatus of the present invention includes a support board 10, an image pickup device 20 mounted on the support board 10, and a lens component 30 provided on the light receiving region of the image pickup device 20, wherein the lens component 30 has a protrusion part 33 provided around the lens part 31, and the height of the protrusion part 33 from the surface of image pickup device 20 is greater than that of the top 31A of lens part 31 from the surface of the image pickup device 20.
摘要翻译：为了提供具有优异的光学特性以及高可靠性的图像拾取装置及其制造方法，能够大量有效地制造图像拾取装置。本发明的图像拾取装置包括支撑板10，安装在支撑板10上的图像拾取装置20和设置在图像拾取装置20的光接收区域上的透镜部件30，其中透镜部件30具有设置在透镜部31周围的突出部33以及突出部33与摄像装置20的表面的高度大于透镜部31的顶面31A的从摄像装置20的表面的高度。

50. 发明授权

US07877569B2 Reduction of fragmentation in nonvolatile memory using alternate address mapping 有权
标题翻译：使用备用地址映射减少非易失性存储器中的碎片
公开(公告)号：US07877569B2
公开(公告)日：2011-01-25
申请号：US11587808
申请日：2005-04-28
申请人： Toshiyuki Honda
发明人： Toshiyuki Honda
IPC分类号： G06F12/10
CPC分类号： G06F3/0643 , G06F3/0607 , G06F3/0611 , G06F3/064 , G06F3/0679 , G06F11/2069 , G06F11/2087 , G06F12/0246 , G06F2212/7201 , G06F2212/7202
摘要： A nonvolatile storage device can read and write data by receiving a logical address from a host. The nonvolatile storage device includes: a nonvolatile memory writing and reading data based on a physical address; a logical/physical conversion table storing information on correspondence between the logical address and the physical address for each of a plurality of data management units; a duplication table storing information on correspondence between the logical address and the physical address of data arranged over a plurality of areas in a duplicate (redundant) manner in the nonvolatile memory and having a size smaller than a size of a data management unit; and a controller controlling an operation of the nonvolatile storage device. The controller permits duplicate (redundant) writing of data having a same logical address as the data (which has been written in one data management unit in another data management unit), and the controller performs a plurality of write modes for the duplicate (redundant) writing, and selectively switches between the write modes according to situation of a logical address change designated by the host.
摘要翻译：非易失性存储设备可以通过从主机接收逻辑地址来读写数据。非易失性存储装置包括：非易失性存储器，基于物理地址写入和读取数据; 存储关于多个数据管理单元中的每一个的逻辑地址和物理地址之间的对应关系的信息的逻辑/物理转换表; 复制表，其存储关于在非易失性存储器中以复制（冗余）方式布置在多个区域上的数据的逻辑地址和物理地址之间的对应关系的信息，并且具有小于数据管理单元的大小的尺寸; 以及控制非易失性存储装置的操作的控制器。控制器允许与具有相同逻辑地址的数据进行重复（冗余）写入，该数据已被写入另一个数据管理单元中的一个数据管理单元中，并且控制器执行多个写入模式用于复制（冗余）根据由主机指定的逻辑地址变化的情况，在写入模式之间选择性地切换。

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