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41. 发明申请

US20140004467A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION 有权
标题翻译：形成电阻图案和负极色调发展电阻组合物的方法
公开(公告)号：US20140004467A1
公开(公告)日：2014-01-02
申请号：US14003708
申请日：2012-03-07
申请人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Isamu Takagi
发明人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Isamu Takagi
IPC分类号： G03F7/32
CPC分类号： G03F7/325 , C08F220/24 , C08F220/28 , C08F220/38 , C08F224/00 , C08F226/02 , C08F228/06 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用含有通过酸作用在有机溶剂中溶解度降低的基础组分（A）的抗蚀剂组合物在基材上形成抗蚀剂膜; 曝光抗蚀膜; 以及使用含有有机溶剂的显影液进行负色发展的图案化，其中，所述基材（A）含有具有曝光时产生酸的结构单元（a0）的树脂成分（A1）和结构单元（a1）衍生自可以具有与被取代基取代的在α位上的碳原子键合的氢原子的丙烯酸酯，并且含有通过酸作用显示出极性增加的酸分解基团，显影液含有腈溶剂。

42. 发明授权

US08367503B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08367503B2
公开(公告)日：2013-02-05
申请号：US13181583
申请日：2011-07-13
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/00
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

43. 发明申请

US20120329969A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20120329969A1
公开(公告)日：2012-12-27
申请号：US13539558
申请日：2012-07-02
申请人： Tasuku MATSUMIYA , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku MATSUMIYA , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： C08F228/06
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

44. 发明授权

US08329378B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08329378B2
公开(公告)日：2012-12-11
申请号：US12721240
申请日：2010-03-10
申请人： Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono , Takahiro Dazai
发明人： Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono , Takahiro Dazai
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/2041 , C08F212/08 , C08F212/14 , C08F212/32 , C08F220/24 , C08F220/28 , C08F220/30 , C08F2220/1891 , C08F2220/382 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid, and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) having an aromatic group, a structural unit (a5) represented by general formula (a5-1) shown below, and a structural unit (a1) containing an acid-dissociable, dissolution-inhibiting group. In the formula (a5-1), R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof.
摘要翻译：一种正极抗蚀剂组合物，其包含在酸性作用下在碱显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸发生剂组分（B），所述碱成分（A）包含聚合物含有具有芳香族基团的结构单元（a0）的化合物（A1），下述通式（a5-1）所示的结构单元（a5）和含有酸解离性，溶解抑制性的结构单元（a1）组。式（a5-1）中，R 1表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基，R 2表示二价连接基，R 3表示含有 -SO2-在其环骨架内。

45. 发明授权

US08232041B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08232041B2
公开(公告)日：2012-07-31
申请号：US12694037
申请日：2010-01-26
申请人： Takahiro Dazai , Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono
发明人： Takahiro Dazai , Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F28/06
CPC分类号： C08F220/10 , C08F28/06 , G03F7/0397 , Y10S430/111
摘要： A polymeric compound (A1) includes a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) represented by general formula (a0-2), and a structural unit (a1-0-1) represented by general formula (a1-0-1), wherein relative to the combined total of all the structural units, the proportion of the structural unit (a0-1) is from 10 to 40 mol %, the proportion of the structural unit (a0-2) is from 5 to 20 mol %, and the proportion of the structural unit (a1-0-1) is from 10 to 55 mol %. [In the formulas, each of R1 and R independently represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms, R2, A and B each represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton thereof, and R4 and X1 each represents an acid-dissociable, dissolution-inhibiting group.]
摘要翻译：高分子化合物（A1）包括由通式（a0-1）表示的结构单元（a0-1），由通式（a0-2）表示的结构单元（a0-2）和结构单元（a1- 0-1），其中相对于所有结构单元的组合总和，结构单元（a0-1）的比例为10〜40摩尔％，比例为结构单元（a0-2）为5〜20摩尔％，结构单元（a1-0-1）的比例为10〜55摩尔％。 [式中，R 1，R 2各自独立地表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R2，A，B各自表示二价连接基团， R3表示在其环骨架中含有-SO2-的环状基团，R4和X1各自表示酸解离的溶解抑制基团。

46. 发明授权

US08221956B2 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound 有权
标题翻译：用于浸渍曝光的抗蚀剂组合物，形成抗蚀剂图案的方法和含有氟化物的聚合物
公开(公告)号：US08221956B2
公开(公告)日：2012-07-17
申请号：US12457705
申请日：2009-06-18
申请人： Daiju Shiono , Tomoyuki Hirano , Sanae Furuya , Takahiro Dazai , Hiroaki Shimizu , Tsuyoshi Kurosawa , Hideto Nito , Tsuyoshi Nakamura
发明人： Daiju Shiono , Tomoyuki Hirano , Sanae Furuya , Takahiro Dazai , Hiroaki Shimizu , Tsuyoshi Kurosawa , Hideto Nito , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F14/18
CPC分类号： C08F214/18 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.
摘要翻译：一种浸渍曝光用抗蚀剂组合物，包括：含有具有碱解离基团的结构单元（f1）和由通式（f2-1）表示的结构单元（f2）的含氟聚合物（F）（其中R表示氢原子，低级烷基或卤代低级烷基; W为通式（w-1）〜（w-4）中任一个表示的基团）; 在酸性作用下在碱性显影液中表现出改变的溶解性的碱成分（A）和在曝光时产生酸的酸发生剂组分（B）。

47. 发明申请

US20120077125A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND 有权
标题翻译：用于浸渍曝光的耐腐蚀组合物，使用其的形成耐蚀图案的方法和含氟化合物
公开(公告)号：US20120077125A1
公开(公告)日：2012-03-29
申请号：US13310625
申请日：2011-12-02
申请人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
发明人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
IPC分类号： G03F7/20 , G03F7/004 , G03F7/027
CPC分类号： G03F7/0046 , C07C69/653 , C07C69/67 , C07C69/712 , C07C69/757 , C07C2603/00 , C07C2603/84 , C07C2603/86 , C08F12/20 , C08F12/22 , C08F12/32 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/28 , C09D125/14 , C09D125/18 , G03F7/0048 , G03F7/0382 , G03F7/0397 , G03F7/2041 , C08F212/14 , C08F2220/1833 , C08F212/32 , C08F2220/185 , C08F2220/283 , C08F220/06
摘要： A resist composition for immersion exposure, including a base component that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component that generates acid upon exposure, and a fluorine-containing compound represented by a general formula (c-1) that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(═O)— group in general formula (c-1); and R2 represents an organic group having a fluorine atom.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括在酸作用下在碱性显影液中表现出改变的溶解度的基础组分，暴露时产生酸的酸产生剂组分和由通式（c-1）表示的含氟化合物），其可以在碱性显影液中分解：其中R1表示可以含有可聚合基团的有机基团，条件是所述可聚合基团具有碳 - 碳多重键，并且形成多重键的碳原子不直接键合通式（c-1）中的-C（= O） - 基团中的碳原子; R2表示具有氟原子的有机基团。

48. 发明授权

US08088553B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08088553B2
公开(公告)日：2012-01-03
申请号：US12425706
申请日：2009-04-17
申请人： Hiroaki Shimizu , Tsuyoshi Nakamura , Takayoshi Mori , Sanae Furuya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai
发明人： Hiroaki Shimizu , Tsuyoshi Nakamura , Takayoshi Mori , Sanae Furuya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F220/28
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R8 represents a divalent linking group; and R7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R4 represents a branched alkyl group of 3 or more carbon atoms; and each of R5 and R6 independently represents an alkyl group, wherein R5 and R6 are mutually bonded to form a ring).
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1）具有由通式（a0-1）表示的结构单元（a0-1）（其中R1表示氢原子，低级烷基或卤代低级烷基; R8表示二价连接基团，R7表示酸解离，溶解抑制基）和由通式（a0-2）表示的结构单元（a0-2）（其中R3表示氢原子，低级烷基或卤代低级烷基; R4表示支链烷基 3个以上的碳原子，R5和R6各自独立地表示烷基，其中R5和R6相互键合形成环）。

49. 发明授权

US08021823B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08021823B2
公开(公告)日：2011-09-20
申请号：US12372964
申请日：2009-02-18
申请人： Hiroaki Shimizu , Tsuyoshi Nakamura , Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano
发明人： Hiroaki Shimizu , Tsuyoshi Nakamura , Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/122 , Y10S430/123 , Y10S430/124 , Y10S430/125 , Y10S430/126
摘要： There is provided a positive resist composition, including a base component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) shown below: (wherein, R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; A represents a bivalent linking group; B represents a bivalent linking group; and R2 represents an acid dissociable, dissolution inhibiting group).
摘要翻译：提供了一种正性抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂成分（B），其中， A）包括含有下述通式（a0-1）表示的结构单元（a0）的高分子化合物（A1）：（其中，R1表示氢原子，低级烷基或卤代低级烷基; A 表示二价连接基团; B表示二价连接基团; R2表示酸解离，溶解抑制基团）。

50. 发明申请

US20110061678A1 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
公开(公告)号：US20110061678A1
公开(公告)日：2011-03-17
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： B08B7/00 , C11D3/44
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.

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