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41. 发明授权

US06709909B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06709909B2
公开(公告)日：2004-03-23
申请号：US10440133
申请日：2003-05-19
申请人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
发明人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
IPC分类号： H01L21338
CPC分类号： H01L21/76243 , H01L21/26533 , H01L29/1054 , H01L29/78687 , Y10S438/933 , Y10S438/938
摘要： A method of manufacturing a semiconductor device which includes forming a first SiGe layer having a low content of Ge, forming an oxide layer by implanting oxygen ions into the first SiGe layer, and then annealing the first SiGe layer. The method also includes forming, on the first SiGe layer, a second SiGe layer which has a higher content of Ge than the first SiGe layer, forming a strained Si layer on the second SiGe layer, and forming a field effect transistor in which the strained Si layer is used a channel region. Further, a field effect transistor may be formed on a semiconductor substrate having an indefectible, high-quality, buried oxide layer and a largely strained Si layer, and hence a high-speed, low-power-consumption semiconductor device can be realized.
摘要翻译：一种制造半导体器件的方法，包括：通过将氧离子注入到第一SiGe层中形成具有低Ge含量的第一SiGe层，形成氧化层，然后退火第一SiGe层。该方法还包括在第一SiGe层上形成第二SiGe层，其具有比第一SiGe层更高的Ge含量，在第二SiGe层上形成应变Si层，并形成其中应变的场效晶体管 Si层用于沟道区。此外，可以在具有不可缺的，高质量的掩埋氧化物层和大的应变Si层的半导体衬底上形成场效应晶体管，因此可以实现高速，低功耗的半导体器件。

42. 发明授权

US06326667B1 Semiconductor devices and methods for producing semiconductor devices 失效
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US06326667B1
公开(公告)日：2001-12-04
申请号：US09658191
申请日：2000-09-08
申请人： Naoharu Sugiyama , Tomohisa Mizuno , Shinichi Takagi , Atsushi Kurobe
发明人： Naoharu Sugiyama , Tomohisa Mizuno , Shinichi Takagi , Atsushi Kurobe
IPC分类号： H01L2972
CPC分类号： H01L29/66916 , H01L29/78687 , H01L29/802
摘要： The invention is intended to form, on an insulating layer, a thin SiGe layer serving as an underlying layer for obtaining a strained silicon layer, and to provide a satisfactory strained Si layer. A SiGe layer 13 is formed on a Si substrate 11 and an oxygen ion implantation is effected with ensuring the detainment within the layer thickness of the SiGe layer 13. The SiGe layer 13 is lattice-relaxed by a heat treatment and a buried insulating layer 15 is formed simultaneously in the SiGe layer 13. A strained Si layer 17 is re-grown on the lattice-relaxed SiGe layer 13.
摘要翻译：本发明旨在在绝缘层上形成用作获得应变硅层的下层的薄SiGe层，并提供令人满意的应变Si层。在Si衬底11上形成SiGe层13，并且确保在SiGe层13的层厚度内保留的氧离子注入。通过热处理和掩埋绝缘层15对SiGe层13进行晶格弛豫在SiGe层13中同时形成。应变Si层17在晶格弛豫SiGe层13上重新生长。

43. 发明授权

US5216271A BiCMOS device with low bandgap CMOS contact regions and low bandgap bipolar base region 失效
标题翻译： BiCMOS器件具有低带隙CMOS接触区域和低带隙双极基极区域
公开(公告)号：US5216271A
公开(公告)日：1993-06-01
申请号：US766221
申请日：1991-09-27
申请人： Shinichi Takagi , Tomohisa Mizuno
发明人： Shinichi Takagi , Tomohisa Mizuno
IPC分类号： H01L21/8249 , H01L21/28 , H01L21/285 , H01L27/06 , H01L29/43
CPC分类号： H01L27/0623 , H01L21/28525
摘要： According to the present invention, a control gate is formed on an n-type Si substrate, and a p-type source-drain region is formed in the surface of the substrate on both the sides of the control gate. A p-type Si.sub.x Ge.sub.1-x (0.ltoreq.x
摘要翻译：根据本发明，在n型Si衬底上形成控制栅极，并且在控制栅极的两侧的衬底的表面中形成p型源极 - 漏极区域。在源极 - 漏极区域中依次形成p型SixGe1-x（0

44. 发明授权

US4708699A Method and apparatus for reducing sound emanation from a drive system 失效
标题翻译：用于减少驱动系统的声音发散的方法和装置
公开(公告)号：US4708699A
公开(公告)日：1987-11-24
申请号：US822583
申请日：1986-01-27
申请人： Hiroshi Takano , Shinichi Takagi , Kiyokazu Wada , Sadaichi Konishi , Tomizo Kanaoka
发明人： Hiroshi Takano , Shinichi Takagi , Kiyokazu Wada , Sadaichi Konishi , Tomizo Kanaoka
IPC分类号： F02B77/13 , F16H57/00 , F16H57/05 , F16H57/04
CPC分类号： F16H57/0415 , F02B77/13 , F16H57/0006 , F16H57/05
摘要： An apparatus and method for effectively minimizing sound emanation from a power transmission belt drive and providing extended useful life of the power transmission belt by reducing the operating temperature thereof. In the illustrated embodiment, the drive system is enclosed in a housing having one or more inlets and one or more outlets. Air moving structure is provided in association with the pulleys for causing air flow through the interior of the housing from the inlets to the outlets as an incident of operation of the drive system. In the illustrated embodiment, the pulleys are formed of heat conducting material so as to transfer heat from the belt to the air being flowed through the interior of the housing, thereby reducing the operating temperature of the belt. A sound absorber may be provided within the housing and, in the illustrated embodiment, sound absorbing means are provided on the inner surfaces of the housing, the inlets and outlets, and may be provided internally of conduits which may be coupled to the inlets and outlets as desired. Fans may be provided in the inlet and/or outlet for augmented air flow through the housing.
摘要翻译：一种用于有效地最小化从动力传动带驱动器发出的声音的装置和方法，并且通过降低动力传动带的工作温度来提供动力传递带的延长的使用寿命。在所示实施例中，驱动系统被封闭在具有一个或多个入口和一个或多个出口的壳体中。与滑轮相关联地设置有空气移动结构，用于当驱动系统的操作的入射时，使空气从入口到出口流过壳体的内部。在所示实施例中，滑轮由导热材料形成，以便将热量从带传递到流过壳体内部的空气，从而降低带的工作温度。吸声器可以设置在壳体内，并且在所示实施例中，吸音装置设置在壳体的内表面，入口和出口上，并且可以设置在管道的内部，管道可以连接到入口和出口如预期的。可以在入口和/或出口中设置风扇以增加通过壳体的气流。

45. 发明申请

US20110233689A1 SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：半导体器件，用于制造半导体器件的工艺，半导体衬底和用于生产半导体衬底的工艺
公开(公告)号：US20110233689A1
公开(公告)日：2011-09-29
申请号：US13133092
申请日：2009-11-27
申请人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
发明人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336 , H01L29/20 , H01L21/20
CPC分类号： H01L29/045 , H01L29/20 , H01L29/7833 , H01L29/78681
摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.
摘要翻译：提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料，相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极具有绝缘材料并且包括金属导电材料。

46. 发明授权

US08008751B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08008751B2
公开(公告)日：2011-08-30
申请号：US11950716
申请日：2007-12-05
申请人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
发明人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
IPC分类号： H01L29/04
CPC分类号： H01L21/84 , H01L27/1203 , H01L27/1207 , H01L29/045 , H01L29/1054 , H01L29/42392 , H01L29/7842 , H01L29/785 , H01L29/78684
摘要： A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a direction.
摘要翻译：半导体器件包括绝缘体层和具有n沟道的n沟道MIS晶体管和具有ap沟道的pMIS晶体管，其形成在绝缘体层上，其中n沟道MIS晶体管的n沟道由Si 层在通道长度方向上具有单轴拉伸应变，p沟道MIS晶体管的p沟道由沟道长度方向上具有单轴压缩应变的SiGe或Ge层形成，并且沟道长度方向 n沟道MIS晶体管和p沟道MIS晶体管是<110>方向。

47. 发明申请

US20090020866A1 SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090020866A1
公开(公告)日：2009-01-22
申请号：US11930350
申请日：2007-10-31
申请人： Junji Fujino , Shinichi Takagi
发明人： Junji Fujino , Shinichi Takagi
IPC分类号： H01L23/12 , H01L21/00
CPC分类号： H01L23/10 , H01L23/057 , H01L2924/0002 , H01L2924/01079 , H01L2924/16195 , H01L2924/163 , H01L2924/00
摘要： A semiconductor device includes: a package case in which a semiconductor element is mounted, the package case having a bonding portion; a cap having a bonding portion bonded to the bonding portion of the package case so as to hermetically seal the semiconductor element; and one or more bonding/sealing wires disposed between and in contact with the bonding portion of the package case and the bonding portion of the cap such that the one or more bonding/sealing wires form a closed loop and hermetically seal the semiconductor element.
摘要翻译：半导体器件包括：封装壳体，其中安装有半导体元件，所述封装壳体具有接合部分; 帽，其具有接合部分，其结合到所述封装壳体的所述接合部分，以密封所述半导体元件; 以及设置在封装壳体的接合部分和盖子的接合部分之间并与之接触的一个或多个接合/密封线，使得一个或多个接合/密封线形成闭环并气密地密封半导体元件。

48. 发明授权

US07229892B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07229892B2
公开(公告)日：2007-06-12
申请号：US11064943
申请日：2005-02-25
申请人： Koji Usuda , Shinichi Takagi
发明人： Koji Usuda , Shinichi Takagi
IPC分类号： H01L21/762 , H01L21/8232
CPC分类号： H01L21/76283 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/76275 , H01L21/823481 , H01L21/84 , H01L27/1203 , H01L29/1054
摘要： A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on a side of the first semiconductor layer, epitaxially growing a second semiconductor layer in a region on the semiconductor substrate other than a region formed with the first insulating layer, forming a first semiconductor element in the first semiconductor layer on the first insulating layer, and forming a second semiconductor element in the second semiconductor layer on the second insulating layer.
摘要翻译：一种制造半导体器件的方法，包括：制备半导体衬底，将第一半导体层与介于其间的第一绝缘层接合在半导体衬底的一部分上，在第一半导体层侧形成第二绝缘层，外延生长在除了形成有第一绝缘层的区域之外的半导体衬底上的区域中的第二半导体层，在第一绝缘层上的第一半导体层中形成第一半导体元件，以及在第二半导体层中形成第二半导体元件第二绝缘层。

49. 发明申请

US20060292835A1 Element fabrication substrate 有权
公开(公告)号：US20060292835A1
公开(公告)日：2006-12-28
申请号：US11510745
申请日：2006-08-28
申请人： Shu Nakaharai , Tsutomu Tezuka , Shinichi Takagi
发明人： Shu Nakaharai , Tsutomu Tezuka , Shinichi Takagi
IPC分类号： H01L21/20
CPC分类号： H01L21/324 , C30B3/00 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/28255 , H01L21/7624 , H01L21/84 , H01L29/1054 , H01L29/66742 , H01L29/78 , H01L29/7842 , H01L29/78684
摘要： A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer having a thickness not more than 6 nm. The monocrystal Ge thin layer has a thickness not less than 2 nm and a compressive strain.

50. 发明授权

US07119385B2 Semiconductor apparatus having first and second gate electrodes 有权
标题翻译：具有第一和第二栅电极的半导体装置
公开(公告)号：US07119385B2
公开(公告)日：2006-10-10
申请号：US10913478
申请日：2004-08-09
申请人： Koji Usuda , Shinichi Takagi
发明人： Koji Usuda , Shinichi Takagi
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/78696 , H01L21/28194 , H01L21/28211 , H01L27/1203 , H01L29/1054 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/66893 , H01L29/78648 , H01L29/78654 , H01L29/78687
摘要： A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.
摘要翻译：半导体装置包括基板，由单晶半导体材料制成并形成在基板上的缓冲层，形成在缓冲层上并具有不同于缓冲层的晶格常数的应变Si层，形成单晶绝缘膜在应变Si层上并且由具有不同于Si的晶格常数的稀土结构的材料制成，以及形成在绝缘膜上的电极。

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