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    • 45. 发明申请
    • Semiconductor Device and Manufacturing Process Therefor
    • 半导体器件及其制造工艺
    • US20090152640A1
    • 2009-06-18
    • US12086435
    • 2006-12-26
    • Takashi Hase
    • Takashi Hase
    • H01L25/07H01L21/425
    • H01L21/823871H01L21/28097H01L21/823835H01L21/823842H01L29/4975H01L29/517H01L29/66545
    • This invention provides a semiconductor device that can prevent a deviation of work function by adopting a gate electrode having a uniform composition and exhibits excellent operating characteristics by virtue of effective control of a Vth. The semiconductor device is characterized by comprising a PMOS transistor, an NMOS transistor, a gate insulating film comprising an Hf-containing insulating film with high permittivity, a line electrode comprising a silicide region (A) and a silicide region (B), one of the silicide regions (A) and (B) comprising a silicide (a) of a metal M, which serves as a diffusing species in a silicidation reaction, the other silicide region comprising a silicide layer (C) in contact with a gate insulating film, the silicide layer (C) comprising a silicide (b) of a metal M, which has a smaller atom composition ratio of the metal M than the silicide (a), and a dopant which can substantially prevent diffusion of the metal M in the silicide (b).
    • 本发明提供一种能够通过采用具有均匀组成的栅电极来防止功函偏差的半导体器件,并且由于有效的Vth控制而具有优异的工作特性。 半导体器件的特征在于包括PMOS晶体管,NMOS晶体管,包括具有高介电常数的含Hf绝缘膜的栅极绝缘膜,包括硅化物区域(A)和硅化物区域(B)的线电极, 硅化物区域(A)和(B)包括在硅化反应中用作扩散物质的金属M的硅化物(a),另一个硅化物区域包括与栅极绝缘膜接触的硅化物层(C) 包含金属M的硅化物(b)的硅化物层(C),其具有比硅化物(a)更小的金属M的原子组成比,以及可以基本上防止金属M扩散的掺杂​​剂 硅化物(b)。
    • 48. 发明授权
    • Vapor phase growth method of oxide dielectric film
    • 氧化物介质膜的气相生长方法
    • US06863726B2
    • 2005-03-08
    • US10419822
    • 2003-04-22
    • Takashi Hase
    • Takashi Hase
    • C23C16/44C23C16/40C23C16/455H01L21/314H01L21/316H01L21/8246H01L27/105C30B25/02
    • C23C16/45527C23C16/409C23C16/45523C23C16/45531H01L21/31691
    • A vapor phase growth method of an oxide dielectric film for forming an oxide dielectric film having a perovskite crystal structure expressed by ABO3 on a substrate according to the present invention includes a first step of sequentially and alternately supplying an A-site layer element material and a B-site layer element material to grow an atomic layer on the substrate to form an early layer or early core, at a first substrate temperature, and a second step of raising the temperature to a second substrate temperature that is higher than the first substrate temperature to crystallize the early layer or early core formed in the first step and simultaneously supplying both the A-site layer element material and the B-site layer element material to form an ABO3 film.
    • 本发明的基板上形成具有由ABO3表示的钙钛矿晶体结构的氧化物电介质膜的氧化物电介质膜的气相生长方法包括:顺序并交替地供给A位点层元素材料和 B位点层元素材料,以在第一衬底温度下在衬底上生长原子层以形成早期层或早期芯,以及将温度升高到高于第一衬底温度的第二衬底温度的第二步骤 使在第一步骤中形成的早期层或早期核心结晶,同时供应A位点层元素材料和B位点层元素材料以形成ABO 3膜。