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1. 发明申请

US20090072255A1 PHOSPHOR AND LIGHT-EMITTING DEVICE USING SAME 有权
标题翻译：使用相同的磷光体和发光装置
公开(公告)号：US20090072255A1
公开(公告)日：2009-03-19
申请号：US11997926
申请日：2006-08-10
申请人： Tomoko Takahashi , Nobuhiro Kodama , Yasuo Shimomura , Naoto Kijima , Tomoyuki Kurushima , Takashi Hase , Eiji Hattori , Kouichi Adachi , Keiichi Seki , Yutaka Mori
发明人： Tomoko Takahashi , Nobuhiro Kodama , Yasuo Shimomura , Naoto Kijima , Tomoyuki Kurushima , Takashi Hase , Eiji Hattori , Kouichi Adachi , Keiichi Seki , Yutaka Mori
IPC分类号： H01L33/00 , C01F17/00 , C09K11/77
CPC分类号： C09K11/7734 , C09K11/584 , C09K11/642 , C09K11/665 , C09K11/7721 , C09K11/7738 , C09K11/7739 , C09K11/774 , C09K11/7741 , C09K11/7768 , C09K11/7774 , C09K11/7789 , C09K11/7792 , H01L33/502 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12044 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a phosphor that satisfies requirements (1) to (3): (1) the phosphor satisfies Formula [2] and/or Formula [3]: 85≦{R455(125)/R455(25)}×100
摘要翻译：本发明涉及满足要求（1）〜（3）的荧光体：（1）荧光体满足式[2]和/或式[3]：<？in-line-formula description =“In-Line Formulas “end =”lead“？> 85 <= {R455（125）/ R455（25）} x100 <110 [2] <？in-line-formula description =”In-line Formulas“end =”tail“？> <？in-line-formula description =“In-line formula”end =“lead”？> 92 <= {R405（100）/ R405（25）} x100 <110 [3] 其中R455（125）表示当在125℃下峰值波长为455nm的光激发荧光体时的发射峰强度，（2）发射峰值波长在570nm至680nm的范围内，（3）发射峰的半峰全宽为90nm以下。本发明的荧光体具有高的发光效率并以高亮度发出橙色至红色的光。通过使用荧光体，可以制造出效率高，显色性优异的发光装置，照明装置和图像显示装置。

2. 发明授权

US08277687B2 Phosphor and light-emitting device using same 有权
标题翻译：荧光体和发光装置使用相同
公开(公告)号：US08277687B2
公开(公告)日：2012-10-02
申请号：US11997926
申请日：2006-08-10
申请人： Tomoko Takahashi , Nobuhiro Kodama , Yasuo Shimomura , Naoto Kijima , Tomoyuki Kurushima , Takashi Hase , Eiji Hattori , Kouichi Adachi , Keiichi Seki , Yutaka Mori
发明人： Tomoko Takahashi , Nobuhiro Kodama , Yasuo Shimomura , Naoto Kijima , Tomoyuki Kurushima , Takashi Hase , Eiji Hattori , Kouichi Adachi , Keiichi Seki , Yutaka Mori
IPC分类号： C09K11/08 , C09K11/61
CPC分类号： C09K11/7734 , C09K11/584 , C09K11/642 , C09K11/665 , C09K11/7721 , C09K11/7738 , C09K11/7739 , C09K11/774 , C09K11/7741 , C09K11/7768 , C09K11/7774 , C09K11/7789 , C09K11/7792 , H01L33/502 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12044 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a phosphor that satisfies requirements (1) to (3): (1) the phosphor satisfies Formula [2] and/or Formula [3]: 85≦{R455(125)/R455(25)}×100≦110 [2] 92≦{R405(100)/R405(25)}×100≦110 [3] wherein R455(125) represents an emission peak intensity when the phosphor is excited by light having a peak wavelength of 455 nm at 125° C., (2) the emission peak wavelength is in the range of 570 nm to 680 nm, and (3) the full width at half maximum of an emission peak is 90 nm or less. The phosphor of the present invention has a high luminous efficiency and emits light of orange to red with high luminance. The use of the phosphor makes it possible to produce a light-emitting device, an illumination apparatus, and an image display, having a high efficiency and excellent color rendering properties.
摘要翻译：本发明涉及满足要求（1）〜（3）的荧光体：（1）满足式[2]和/或式[3]的荧光体：85＆nlE; {R455（125）/ R455（25）}× 其中R455（125）表示当荧光体被峰值波长为455nm的光激发时的发射峰强度，其中R455（125）表示当荧光体被峰值波长为455nm的光激发时的发射峰强度（2）发射峰值波长在570nm至680nm的范围内，（3）发射峰的半峰全宽为90nm以下。本发明的荧光体具有高的发光效率并以高亮度发出橙色至红色的光。通过使用荧光体，可以制造出效率高，显色性优异的发光装置，照明装置和图像显示装置。

3. 发明申请

US20100213822A1 PHOSPHOR AND PRODUCTION METHOD THEREOF, CRYSTALLINE SILICON NITRIDE AND PRODUCTION METHOD THEREOF, PHOSPHOR-CONTAINING COMPOSITION, AND LIGHT EMITTING DEVICE, DISPLAY AND ILLUMINATING DEVICE USING THE PHOSPHOR 审中-公开
标题翻译：磷光体及其制造方法，其中包括氮化硅和其生产方法，含磷组合物，发光装置，使用磷光体的显示和照明装置
公开(公告)号：US20100213822A1
公开(公告)日：2010-08-26
申请号：US12671481
申请日：2008-07-31
申请人： Satoshi Shimooka , Kyota Ueda , Naoto Kijima , Takashi Hase , Chisato Shimooka , Hiromu Watanabe , Tomoyuki Kurushima
发明人： Satoshi Shimooka , Kyota Ueda , Naoto Kijima , Takashi Hase , Chisato Shimooka , Hiromu Watanabe , Tomoyuki Kurushima
IPC分类号： H01J1/62 , C09K11/79 , C01B21/068
CPC分类号： C09K11/0883 , C01B21/068 , C01B21/0687 , C01B21/0821 , C01P2002/52 , C01P2002/72 , C01P2002/84 , C01P2004/03 , C01P2004/61 , C01P2006/12 , C01P2006/60 , C04B35/597 , C04B35/6262 , C04B35/6265 , C04B35/62675 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3284 , C04B2235/3409 , C04B2235/3418 , C04B2235/3817 , C04B2235/3878 , C04B2235/442 , C04B2235/444 , C04B2235/445 , C04B2235/447 , C04B2235/5409 , C04B2235/5436 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C09K11/7721 , C09K11/7734 , C09K11/7774 , C09K11/7792 , C09K11/7793 , H01L33/502 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to improve quantum efficiency and/or durability of phosphors, a complex oxynitride phosphor is provided represented by the following formula, which can be obtained by firing a phosphor precursor in the presence of flux. M1xBayM2zLuOvNw (In the formula, M1 represents at least one kind of activation element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents at least one kind of bivalent metal element selected from the group consisting of Sr, Ca, Mg and Zn, L represents a metal element selected from the metal elements belonging to the fourth group or the fourteenth group of the periodic table, and 0.00001≦x≦3, 0≦y≦2.99999, 2.6≦x+y+z≦3, 0
摘要翻译：为了提高荧光体的量子效率和/或耐久性，提供了一种复合氮氧化物荧光体，其由下式表示，其可以通过在助焊剂存在下烧制荧光体前体而获得。 M1xBayM2zLuOvNw（式中，M1表示选自Mn，Ce，Pr，Nd，Sm，Eu，Tb，Dy，Ho，Er，Tm和Yb中的至少一种活化元素，M2表示至少一种选自Sr，Ca，Mg和Zn的二价金属元素，L表示选自属于第四族或第十四族周期表的金属元素的金属元素，以及0.00001＆nlE; x＆nlE; 3 ，0＆nlE; y＆nlE; 2.99999,2.6＆nlE; x + y + z＆nlE; 3,0 n; 11,6

4. 发明申请

US20100142189A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, BACKLIGHT, COLOR IMAGE DISPLAY DEVICE AND PHOSPHOR TO BE USED FOR THEM 有权
标题翻译：半导体发光装置，背光，彩色图像显示装置和用于它们的磷光体
公开(公告)号：US20100142189A1
公开(公告)日：2010-06-10
申请号：US12601829
申请日：2009-02-06
申请人： Byungchul Hong , Naoki Sako , Naoto Kijima , Masahiko Yoshino , Takashi Hase , Fumiko Yoyasu , Kentarou Horibe
发明人： Byungchul Hong , Naoki Sako , Naoto Kijima , Masahiko Yoshino , Takashi Hase , Fumiko Yoyasu , Kentarou Horibe
IPC分类号： G02F1/13357 , H01L33/00 , C09K11/61 , C09K11/08 , F21Y101/02
CPC分类号： C09K11/7739 , C09K11/0883 , C09K11/616 , C09K11/675 , C09K11/7734 , F21K2/00 , F21V3/062 , F21Y2115/10 , G02B6/0023 , G02B6/0038 , G02B6/0043 , G02B6/0053 , G02B6/0073 , G02F1/133514 , G02F1/133528 , G02F1/1336 , G02F1/133603 , G02F1/133609 , G02F1/133611 , G02F1/133615 , G02F1/1368 , G02F2001/133614 , G02F2001/133624 , H01L24/45 , H01L33/502 , H01L33/504 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H05B33/14 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/20753 , H01L2924/00012
摘要： To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image.A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
摘要翻译：提供能够对整个图像实现广泛的色彩再现性而不损失整个图像的亮度的半导体发光器件。提供在用于彩色图像显示装置的背光源上的光源具有半导体发光装置，其包括在蓝色或深蓝色区域或紫外线区域中发光的固体发光装置和荧光体。荧光体包括绿色发光荧光体和红色发光荧光体。绿色发光荧光体和红色发光荧光体是当激发光的波长为400nm或455时，发光峰强度在100℃下的变化率与25℃下的发光强度的变化率 nm，至多40％。

5. 发明授权

US08491816B2 Semiconductor light emitting device, backlight, color image display device and phosphor to be used for them 有权
标题翻译：用于它们的半导体发光器件，背光源，彩色图像显示器件和荧光粉
公开(公告)号：US08491816B2
公开(公告)日：2013-07-23
申请号：US12601829
申请日：2009-02-06
申请人： Byungchul Hong , Naoki Sako , Naoto Kijima , Masahiko Yoshino , Takashi Hase , Fumiko Yoyasu , Kentarou Horibe
发明人： Byungchul Hong , Naoki Sako , Naoto Kijima , Masahiko Yoshino , Takashi Hase , Fumiko Yoyasu , Kentarou Horibe
IPC分类号： C09K11/08
CPC分类号： C09K11/7739 , C09K11/0883 , C09K11/616 , C09K11/675 , C09K11/7734 , F21K2/00 , F21V3/062 , F21Y2115/10 , G02B6/0023 , G02B6/0038 , G02B6/0043 , G02B6/0053 , G02B6/0073 , G02F1/133514 , G02F1/133528 , G02F1/1336 , G02F1/133603 , G02F1/133609 , G02F1/133611 , G02F1/133615 , G02F1/1368 , G02F2001/133614 , G02F2001/133624 , H01L24/45 , H01L33/502 , H01L33/504 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H05B33/14 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/20753 , H01L2924/00012
摘要： To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image.A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
摘要翻译：提供能够对整个图像实现广泛的色彩再现性而不损失整个图像的亮度的半导体发光器件。提供在用于彩色图像显示装置的背光源上的光源具有半导体发光装置，其包括在蓝色或深蓝色区域或紫外线区域中发光的固体发光装置和荧光体。荧光体包括绿色发光荧光体和红色发光荧光体。绿色发光荧光体和红色发光荧光体是当激发光的波长为400nm或455时，发光峰强度在100℃下的变化率与25℃下的发光强度的变化率 nm，至多40％。

6. 发明授权

US07985714B2 Nb3Sn superconducting wire and precursor therefor 有权
标题翻译： Nb3Sn超导线及其前驱体
公开(公告)号：US07985714B2
公开(公告)日：2011-07-26
申请号：US11902471
申请日：2007-09-21
申请人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
发明人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
IPC分类号： H01B12/00 , H01L39/24
CPC分类号： H01L39/2409 , Y10S420/901 , Y10S428/93 , Y10S505/887 , Y10T29/49014 , Y10T428/12819
摘要： A precursor for fabricating a Nb3Sn superconducting wire by an internal Sn process includes one or a plurality of stabilizing copper portions collectively disposed in the center, each stabilizing copper portion being provided with a diffusion barrier layer in the periphery thereof, and a superconducting matrix portion disposed so as to surround the one or the plurality of stabilizing copper portions, the superconducting matrix portion including a Nb or Nb-based alloy core and a Sn or Sn-based alloy core embedded in a Cu or Cu-based alloy matrix.
摘要翻译：通过内部Sn工艺制造Nb 3 Sn超导线的前体包括一个或多个稳定的铜部分，其集中设置在中心，每个稳定的铜部分在其周边设置有扩散阻挡层，并且设置超导矩阵部分围绕一个或多个稳定化铜部分，超导矩阵部分包括Nb或Nb基合金芯和嵌入Cu或Cu基合金基体中的Sn或Sn基合金芯。

7. 发明授权

US07781319B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07781319B2
公开(公告)日：2010-08-24
申请号：US12048265
申请日：2008-03-14
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： According to the present invention, it is provided a method of manufacturing a semiconductor device comprising a PMOS transistor and a NMOS transistor, wherein the method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.
摘要翻译：根据本发明，提供一种制造包括PMOS晶体管和NMOS晶体管的半导体器件的方法，其中该方法分别有助于获得用于NMOS晶体管和PMOS晶体管的合适组成的FUSI相，具有较少的掩模层数和数量较少的制造步骤。

8. 发明申请

US20090267158A1 SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREFOR 有权
标题翻译：半导体器件及其制造工艺
公开(公告)号：US20090267158A1
公开(公告)日：2009-10-29
申请号：US12094755
申请日：2006-11-21
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823871 , H01L29/4975 , H01L29/66545
摘要： There is provided a semiconductor device in which deviation in a work function is prevented by a gate electrode having a uniform composition and which has excellent operation properties by effectively controlling a Vth. The semiconductor device comprises an NMOS transistor and a PMOS transistor with a common line electrode, characterized in that the line electrode comprise an electrode section (A), an electrode section (B) and a diffusion barrier region formed in a part over an isolation region so that the electrode sections (A) and (B) are kept out of contact and the diffusion barrier region meets at least one of the following conditions (1) and (2). (1) The diffusion coefficient D1 in the above diffusion barrier region of the constituent element A′ of the above electrode section (A) is lower than the interdiffusion coefficient D2 of the constituent element A′ between electrode section (A) materials. (2) The diffusion coefficient D3 in the above diffusion barrier region of the constituent element B′ of the above electrode section (B) is lower than the interdiffusion coefficient D4 of the constituent element B′ between electrode section (B) materials.
摘要翻译：提供了一种半导体器件，通过有效地控制Vth，通过具有均匀组成的栅电极防止功函中的偏差，并且具有优异的操作特性。半导体器件包括NMOS晶体管和具有公共线电极的PMOS晶体管，其特征在于，线电极包括电极部分（A），电极部分（B）和形成在隔离区域上的部分中的扩散阻挡区域使得电极部分（A）和（B）保持不接触，并且扩散阻挡区域满足以下条件（1）和（2）中的至少一个。（1）上述电极部（A）的构成元素A'的扩散阻挡区域的扩散系数D1低于电极部（A）材料之间的构成元素A'的相互扩散系数D2。（2）上述电极部（B）的构成元件B'的扩散阻挡区域的扩散系数D3低于电极部（B）材料之间的构成元件B'的相互扩散系数D4。

9. 发明授权

US06440751B1 Method of manufacturing thin film and thin film capacitor 有权
标题翻译：制造薄膜和薄膜电容器的方法
公开(公告)号：US06440751B1
公开(公告)日：2002-08-27
申请号：US09653141
申请日：2000-08-31
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L2100
CPC分类号： C23C18/1225 , C23C18/1216 , C23C18/1283 , C23C18/1295 , H01L21/31691 , H01L28/56
摘要： In a method of manufacturing a thin film, a buffer layer is formed a substrate. Thereafter, a ferroelectric thin film material is applied thereto before thermally decomposing the buffer layer. Subsequently, the buffer layer and the ferroelectric thin film are decomposed together. Finally, a crystallized thermal process is performed.
摘要翻译：在制造薄膜的方法中，缓冲层形成为基板。此后，在热分解缓冲层之前施加铁电薄膜材料。随后，缓冲层和铁电薄膜一起分解。最后，进行结晶热处理。

10. 发明授权

US06194227B1 Method of producing a bismuth layer structured ferroelectric thin film 有权
标题翻译：生产铋层结构铁电薄膜的方法
公开(公告)号：US06194227B1
公开(公告)日：2001-02-27
申请号：US09174393
申请日：1998-10-14
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , H01L28/56
摘要： The surface of a Si substrate is coated with a lower electrode of precious metal (Pt), then a buffer layer comprising an oxide thin film containing Bi is deposited. On the surface of the buffer layer, a thin film of a Bi layer structured ferroelectric substance is formed. Thus, reaction of the Bi layer structured ferroelectric substance with the precious metal coating the Si substrate is avoided during crystallization carried out at a low temperature. Therefore, deviation in composition of the thin film thus formed is suppressed to provide the thin film with a high density. When the thickness of the buffer layer is not greater than five percent of that of the Bi layer structured ferroelectric thin film, electrical characteristics of a capacitor are not deteriorated. When electrical connection is conducted by polycrystalline Si, production of oxide can be avoided by deposition at 650° C.
摘要翻译： Si衬底的表面涂覆有贵金属（Pt）的下电极，然后沉积包含含有Bi的氧化物薄膜的缓冲层。在缓冲层的表面形成有Bi层结构的铁电体的薄膜。因此，在低温下进行结晶时避免了Bi层结构的铁电体与覆盖Si衬底的贵金属的反应。因此，抑制如此形成的薄膜的组成偏差，从而提供高密度的薄膜。当缓冲层的厚度不大于Bi层结构的铁电薄膜的厚度的5％时，电容器的电特性不会劣化。当通过多晶硅进行电连接时，可以通过在650℃下沉积来避免生成氧化物。

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