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41. 发明授权

US07396707B2 Fabrication method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07396707B2
公开(公告)日：2008-07-08
申请号：US11565429
申请日：2006-11-30
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
IPC分类号： H01L29/47
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度金地区。

42. 发明授权

US5736438A Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same 失效
标题翻译：场效应薄膜晶体管及其制造方法以及具有其的半导体器件
公开(公告)号：US5736438A
公开(公告)日：1998-04-07
申请号：US483411
申请日：1995-06-07
申请人： Hisayuki Nishimura , Kazuyuki Sugahara , Shigenobu Maeda , Takashi Ipposhi , Yasuo Inoue , Toshiaki Iwamatsu , Mikio Ikeda , Tatsuya Kunikiyo , Junji Tateishi , Tadaharu Minato
发明人： Hisayuki Nishimura , Kazuyuki Sugahara , Shigenobu Maeda , Takashi Ipposhi , Yasuo Inoue , Toshiaki Iwamatsu , Mikio Ikeda , Tatsuya Kunikiyo , Junji Tateishi , Tadaharu Minato
IPC分类号： H01L21/20 , H01L21/336 , H01L21/8244 , H01L27/11 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L27/11 , H01L27/1108 , H01L29/78654 , H01L27/1281 , Y10S257/903
摘要： In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10.sup.9 pieces/cm.sup.2. The thin film transistor shows an ON current of 0.25 .mu.A/.mu.m per channel width of 1 .mu.m and an OFF current of 15 fA/.mu.m. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.
摘要翻译：在TFT负载型的小型化的完全CMOS SRAM中，场效应薄膜晶体管（TFT）能够实现对存储单元的稳定的读/写操作并且可以降低其功耗。形成在绝缘体上的场效应薄膜晶体管包括有源层和栅电极。栅电极形成在有源层的沟道区上，其间具有栅极绝缘膜。有源层由沟道区和源极/漏极区形成。沟道区由单晶硅层形成，不包含晶界。源/漏区由多晶硅层形成。沟道区域的晶体缺陷密度小于109个/ cm 2。薄膜晶体管的通道宽度为1μm，导通电流为0.25μA/μm，OFF电流为15fA /μm。薄膜晶体管可以被施加到用作CMOS型SRAM的存储单元中的负载晶体管的p沟道MOS晶体管。

43. 发明授权

US5480826A Method of manufacturing semiconductor device having a capacitor 失效
标题翻译：具有电容器的半导体器件的制造方法
公开(公告)号：US5480826A
公开(公告)日：1996-01-02
申请号：US383539
申请日：1995-02-03
申请人： Kazuyuki Sugahara , Hideaki Arima
发明人： Kazuyuki Sugahara , Hideaki Arima
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/16 , H01L29/94 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91 , H01L29/16 , H01L29/94
摘要： A semiconductor device includes a capacitor, of which insulator has an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b, which is formed of a polysilicon layer having a large crystal grain diameter (1000 .ANG.-10000 .ANG.).
摘要翻译：半导体器件包括其绝缘体具有改善的耐久性的电容器。在半导体装置中，圆筒形电容器的电容器下部电极11包括由具有大晶粒直径（1000安培-10000昂贵）的多晶硅层形成的立壁部11b。

44. 发明授权

US5401683A Method of manufacturing a multi-layered semiconductor substrate 失效
标题翻译：制造多层半导体衬底的方法
公开(公告)号：US5401683A
公开(公告)日：1995-03-28
申请号：US243706
申请日：1988-09-13
申请人： Kazuyuki Sugahara
发明人： Kazuyuki Sugahara
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2026 , Y10S117/904
摘要： A method of manufacturing a multi-layered semiconductor substrate comprising:a step of forming a first insulation film on the main surface of a semiconductor substrate composed of single crystals,a step of forming a first linear opening of a predetermined size reaching the semiconductor substrate at a predetermined position of the first insulation film,a step of forming second opening with the opening area of 25 .mu.m.sup.2 or less and reaching the semiconductor substrate along the first opening to the first insulation film at a position a spaced apart at least by 10 .mu.m from the outer edge of the first opening,a step of forming a semiconductor layer composed of non-single crystals on the first insulation film also including the inside of the first and the second openings,a step of forming a second insulation film on the semiconductor layer,a step of supplying heat energy to the semiconductor layer by scanning in the direction from the first opening toward the second opening, and melting the semiconductor layer with the heat energy thereby single-crystallizing the semiconductor layer, anda step of removing the second insulation film.
摘要翻译：一种制造多层半导体衬底的方法，包括：在由单晶构成的半导体衬底的主表面上形成第一绝缘膜的步骤，形成到达半导体衬底的预定尺寸的第一线性开口的步骤第一绝缘膜的预定位置，形成具有25μm2或更小的开口面积的第二开口的步骤，并且沿着第一开口到达第一绝缘膜的半导体衬底至间隔至少10μ的位置 m，在包括第一和第二开口的内部的第一绝缘膜上形成由非单晶构成的半导体层的步骤，在第一绝缘膜上形成第二绝缘膜的步骤半导体层，通过沿着从第一开口朝向第二开口的方向扫描而向半导体层提供热能并熔化的步骤使半导体层具有热能从而使半导体层单结晶，以及去除第二绝缘膜的步骤。

45. 发明授权

US5338388A Method of forming single-crystal semiconductor films 失效
标题翻译：形成单晶半导体膜的方法
公开(公告)号：US5338388A
公开(公告)日：1994-08-16
申请号：US877811
申请日：1992-05-04
申请人： Kazuyuki Sugahara , Takashi Ipposhi
发明人： Kazuyuki Sugahara , Takashi Ipposhi
IPC分类号： H01L21/20 , H01L21/762 , H01L21/822 , C30B23/02
CPC分类号： H01L21/2026 , H01L21/8221 , H01L21/76272 , H01L21/76281 , Y10S117/904
摘要： A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor substrate having a crystal axis transferred from a single-crystal semiconductor substrate is formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, comprises the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole on an insulator layer; irradiating a compound beam which includes a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but capable of softening the insulator layer positioned below the non-single-crystal semiconductor film; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.
摘要翻译：一种形成单晶半导体膜的方法，其中具有从单晶半导体衬底转移的晶轴的单晶半导体衬底经由穿过形成于绝缘体层上的绝缘体层的籽晶孔形成在绝缘体层上单晶半导体衬底包括以下步骤：通过绝缘体层上的晶种孔形成与单晶半导体衬底连接的非单晶半导体衬底; 照射包括具有能够熔化非单晶半导体膜的功率密度的第一能量束和不能熔化非单晶半导体膜的功率密度的第二能量束的复合光束但能够使位于非单晶半导体膜下方的绝缘体层软化; 并以这样的方式外延生长单晶半导体膜，使得非晶单晶半导体膜通过从种子开始通过用复合束扫描非单晶半导体膜的表面再次熔化然后再固化孔，首先照射第一能量束，并且第二能量束被照射。

46. 发明授权

US08481290B2 Antibody specific for a chondroitin sulphate epitope 有权
标题翻译：硫酸软骨素表位特异的抗体
公开(公告)号：US08481290B2
公开(公告)日：2013-07-09
申请号：US11628432
申请日：2005-06-01
申请人： Prachya Kongtawelert , Tim Hardingham , Siriwan Ong-Chai , Kazuyuki Sugahara , Peraphan Pothacharoen , Nattachai Tiengburanathum
发明人： Prachya Kongtawelert , Tim Hardingham , Siriwan Ong-Chai , Kazuyuki Sugahara , Peraphan Pothacharoen , Nattachai Tiengburanathum
IPC分类号： C12P21/04
CPC分类号： C07K16/18 , G01N33/57407 , G01N33/6887 , G01N2400/40 , G01N2800/10 , G01N2800/102
摘要： An antibody specific for a chondroitin sulphate epitope is described, as is a hybridoma cell line which produces such an antibody. The antibody is useful in the diagnosis and treatment of connective tissue diseases, such as arthritis and sarcomas. Test kits and pharmaceutical compositions are also described.
摘要翻译：描述了对硫酸软骨素表位具有特异性的抗体，以及产生这种抗体的杂交瘤细胞系也是如此。该抗体可用于结缔组织疾病如关节炎和肉瘤的诊断和治疗。还描述了测试试剂盒和药物组合物。

47. 发明申请

US20070232564A1 Fish-Origin Chondroitin Sulfate/Dermatan Sulfate Hybrid Chain 审中-公开
标题翻译：鱼源硫酸软骨素/硫酸皮肤素混合链
公开(公告)号：US20070232564A1
公开(公告)日：2007-10-04
申请号：US11587789
申请日：2005-04-25
申请人： Kazuyuki Sugahara
发明人： Kazuyuki Sugahara
IPC分类号： A61K31/715 , A61P25/28
CPC分类号： C08B37/0069 , A61K31/715
摘要： It is intended to provide a novel chondroitin sulfate/dermatan sulfate hybrid chain having biding activity toward a variety of growth factors, neurite outgrowth-promoting activity, and anticoagulant activity and to provide a composition for neurological disease treatment. The novel chondroitin sulfate/dermatan sulfate hybrid chain was separated and purified from the bodies of fishes other than bony fishes. When shark skin is used, the hybrid chain comprises a disaccharide GlcUA(2S)-GalNAc(4S) and has an average molecular weight of 65 to 75 kDa, and the degree of sulfation per disaccharide molecule falls within the range of 0.7 or more to less than 1.20. The hybrid chain is capable of binding to a variety of growth factors and further possesses neurite outgrowth-promoting activity and anticoagulant activity.
摘要翻译：本发明提供一种硫酸软骨素/硫酸皮肤素复合链，其具有针对各种生长因子，神经突促生长活性和抗凝血活性的粘合活性，并提供用于神经系统疾病治疗的组合物。将硫酸软骨素/硫酸皮肤素杂交链从骨鱼以外的鱼体中分离纯化。当使用鲨鱼皮时，杂交链包含二糖GlcUA（2S）-GalNAc（4S），平均分子量为65至75kDa，每个二糖分子的硫酸化程度在0.7以上至小于1.20。杂交链能够与多种生长因子结合，进一步具有神经突促生长活性和抗凝血活性。

48. 发明申请

US20070059805A1 Method for producing saccharide chain-extended chondroition 失效
标题翻译：生产糖链延伸软管的方法
公开(公告)号：US20070059805A1
公开(公告)日：2007-03-15
申请号：US11599371
申请日：2006-11-15
申请人： Kazuyuki Sugahara , Hiroshi Kitagawa
发明人： Kazuyuki Sugahara , Hiroshi Kitagawa
IPC分类号： C12P19/28
CPC分类号： C12N9/1051 , C12P19/26
摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.
摘要翻译：本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人类软骨素合成酶。通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

49. 发明申请

US20050263770A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050263770A1
公开(公告)日：2005-12-01
申请号：US11137660
申请日：2005-05-26
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
IPC分类号： H01L51/50 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/786 , H05B33/14
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/78621 , H01L29/78627
摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
摘要翻译：在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。因此，获得了旨在减小半导体元件所占的面积的半导体器件。

50. 发明申请

US20050253195A1 Semiconductor device and image display device 审中-公开
标题翻译：半导体装置及图像显示装置
公开(公告)号：US20050253195A1
公开(公告)日：2005-11-17
申请号：US11109818
申请日：2005-04-20
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
IPC分类号： H01L27/08 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/786
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the source region, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The gate electrode is formed overlapping with and facing the channel region and the GOLD region. A semiconductor device is obtained, directed to improving source-drain breakdown voltage and AC stress resistance, and achieving desired current property.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管，其包括源极区，漏极区，具有预定沟道长度的沟道区，GOLD区和具有低于源区杂质浓度的杂质浓度的LDD区，具有杂质浓度低于漏区杂质浓度的GOLD区和LDD区，栅极绝缘膜和栅电极。栅电极与沟道区域和金区域重叠并面对沟道区域。获得了一种半导体器件，旨在改善源 - 漏击穿电压和AC抗应力，并实现期望的电流特性。

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