专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JPS6312180A PHOTOCONDUCTIVE DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS6312180A
公开(公告)日：1988-01-19
申请号：JP21233286
申请日：1986-09-09
申请人： TOSHIBA CORP
发明人： SUDA YOSHIYUKI , SHIMADA OSAMU
IPC分类号： H01L27/146 , H01L27/14 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To obtain a photoconductive device of high photoconductivity which keeps excellent photo response characteristics and generates a large photo current, by forming the region between ohmic electrodes of a photoconductive layer with N-type semiconductor doped with impurity of a density less than or equal to 2X10 /cm . CONSTITUTION: N-a-Si of a photoconductive layer 2 is formed by a glow discharge CVD method applying a reaction gas in which SiH4 gas is used as a starting, gas and a very small amount of PH3 less than or equal to 2 ppm is contained as an impurity doping gas. Electrodes 3 and 4 are formed by vapor deposition of titanium and its patterning of photolithography. In this case, the density of PH3 is less than or equal to 2X10 /cm in a conversion value of impurity atom density in the N-a-Si. In this manner, the amorphous semiconductor in the region which contributes to the photo current dependent on an incident light contains a very small amount of N-type impurity, so that the photoelectric conductivity is increased, and the photo response characteristics which are practically sufficient to a photoelectric conversion element in an image sensor and the like can be obtained.

42. 发明专利

JPS6312164A IMAGE SENSOR 失效
公开(公告)号：JPS6312164A
公开(公告)日：1988-01-19
申请号：JP15160286
申请日：1986-06-30
申请人： TOSHIBA CORP
发明人： SUZUKI KOHEI , NAKAI TOSHIO , ANPO KUNIAKI , SHIMADA OSAMU
IPC分类号： H01L27/146 , H04N1/028 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
摘要： PURPOSE:To prevent occurrence of leaking currents between neighboring,P groops, by connecting comb shaped electrodes, which are located at both ends of each groups of optoelectric transducers to an interconnection on the side, to which a driving voltage is applied, among row interconnections and common interconnections. CONSTITUTION:Optoelectric transducers D1-DNM have a planar structure using comb shaped electrodes. On an insulating substrate 1, an optoelectric transducer layer 2 is formed. First and second comb shaped electrodes 3 and 4 are formed so that they approach from both sides of the layer in the direction of the width and they are intermeshed to each other. The first comb shaped electrode 3 is connected to columns interconnections LB1-LBNM. The second comb shaped electrode 4 is connected to common interconnections LA1-LAM. Row interconnections LC1-LCN are formed on the insulating substrate 1. A strip shaped insulating film 5 is formed in parallel with the optoelectric transducer layer 2. The column interconnections LD1-LBNM are formed so that they are extended over the film 5. The row interconnections LC1-LCN and the column interconnections LD1-LDNM are connected by way of through holes, which are formed in the interlayer insulating film 5.

43. 发明专利

JPS61110460A Hybrid integrated circuit 失效
标题翻译：混合集成电路
公开(公告)号：JPS61110460A
公开(公告)日：1986-05-28
申请号：JP23171284
申请日：1984-11-02
申请人： Toshiba Corp
发明人： SHIMADA OSAMU , NAKAI TOSHIO
IPC分类号： H05K1/18 , H01L23/538 , H01L25/04 , H01L25/16 , H01L25/18 , H01L27/13 , H05K1/14
CPC分类号： H01L23/5385 , H01L25/16 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/19107 , H05K1/141 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To facilitate the increase in the density by disposing the second insulating substrate placing a semiconductor element on a region formed with the first insulating substrate wiring pattern placing a semiconductor element, and connecting the wiring pattern on the first substrate with the semiconductor element on the second substrate. CONSTITUTION:A wiring pattern 2 is formed on the surface of the first insulating substrate 1, and a semiconductor element 4 is placed through a die pad 3. The element 4 is connected with the pattern 2. The second insulating substrate 5 is mounted on a region formed with the pattern 2. A semiconductor element 7 is placed through a die pad 6 on the substrate 5, and electrically connected wiring pattern 8 is further formed. The patterns 8 on the substrates 5, 1 are connected by wire bonding to electrically connect the pattern 2 on the substrate 1 with the element 7 on the substrate 5.
摘要翻译：目的：为了通过将设置半导体元件的第二绝缘基板设置在形成有第一绝缘基板布线图案的区域放置半导体元件并且将第一基板上的布线图案与半导体元件上的半导体元件第二基板。构成：在第一绝缘基板1的表面上形成布线图案2，并且通过芯片焊盘3放置半导体元件4.元件4与图案2连接。第二绝缘基板5安装在形成有图案2.半导体元件7通过衬底5上的管芯焊盘6放置，并进一步形成电连接的布线图案8。基板5,1上的图案8通过引线接合连接，将基板1上的图案2与基板5上的元件7电连接。

44. 发明专利

JPH11204076A GAS ELECTRON AMPLIFYING ELEMENT AND GAS ELECTRON AMPLIFICATION DETECTOR 失效
公开(公告)号：JPH11204076A
公开(公告)日：1999-07-30
申请号：JP607498
申请日：1998-01-14
申请人： TOSHIBA CORP
发明人： SHIMADA OSAMU
IPC分类号： H01J47/02
摘要： PROBLEM TO BE SOLVED: To provide a gas electron amplifying element and a gas electron amplification detector having high reliability and safety and capable of detecting emitted light at high precision. SOLUTION: This gas electron amplifying element comprises an insulating supporting body 4, anodes 5 and cathodes 6 alternately installed at prescribed intervals on the insulating supporting body 4, and a wiring circuit for applying high voltage between the anodes 5 and the cathodes 6 and generating electric fields with high intensity between neighboring electrodes 5, 6. The insulating supporting body 4 face between the anodes 5 and the cathodes 6 is made to be recessed more (be thinner) than the insulating supporting body 4 face supporting the neighboring electrode patterns.

45. 发明专利

JPH10289928A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10289928A
公开(公告)日：1998-10-27
申请号：JP9921897
申请日：1997-04-16
申请人： TOSHIBA CORP
发明人： UENO FUMITAKA , SHIMADA OSAMU , HIRAI HIROYUKI , SONODA YOSHIAKI , FUKUOKA YOSHITAKA
IPC分类号： H01L21/60 , H01L23/12 , H05K1/18 , H05K3/32 , H05K3/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, having excellent mounting and connection reliability, which can be manufactured by a simple process for manufacturing, and to provide a manufacturing method of the above-mentioned semiconductor device. SOLUTION: This semiconductor device is provided with a wiring substrate 6 having a connection terminal 6a group formed on the main surface, a semiconductor chip 7 having an electrode 7a group corresponding to the connection terminal 6a group of the wiring substrate 6, and a conductive metal protruding parts 8 which are formed on the connection terminal 6a of the wiring substrate 6 and used to electrically and mechanically connect the electrode 7a and the connection terminal 6a, and a conductive layer 9a consisting of an anisotropic conductor 9 is interposed at least on the side of the tip connecting surface of the protruding part 8.

46. 发明专利

JPH10284844A WIRING BOARD AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10284844A
公开(公告)日：1998-10-23
申请号：JP9266597
申请日：1997-04-11
申请人： TOSHIBA CORP
发明人： SHIMADA OSAMU , FUKUOKA YOSHITAKA
IPC分类号： H05K1/11 , H01L23/12 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a wiring board and high density mounting circuit device having high mounting density and high reliable connection and the like. SOLUTION: In the wiring board having a base wiring board 1 containing resin as an interlayer insulation 1a and a thin film wiring layer 2 formed on at least one of the main faces of the base wiring board 1, the electrical connection between the wiring pattern layer itself 1b and 1b, and wiring pattern layer 1b and 1c on the base wiring board 1 is electrically connected by the connection conductor 1d inserted by press into the interlayer insulation layer 1a.

47. 发明专利

JPH04294770A STATIC CHARGE-PROOF PACKING MATERIAL 失效
公开(公告)号：JPH04294770A
公开(公告)日：1992-10-19
申请号：JP5675591
申请日：1991-03-20
申请人： TOSHIBA CORP
发明人： SHIMADA OSAMU
IPC分类号： B65D65/42 , B65D81/24 , B65D85/00 , B65D85/38 , B65D85/86
摘要： PURPOSE:To provide a packing material for semiconductor devices which is low price and very effective in preventing charging, and further improved in effective application of conductive material and in simplification of molding and disposal. CONSTITUTION:A film-, box- or bag-shaped mold 1 of a thermoplastic resin is provided with a wiring pattern 2 by conductive paste such as silver paste. A part of the wiring pattern 2 is formed and exposed at a prescribed position on an inner side as a connection pad pattern 5. Further, a reed terminal 4 of a packed semiconductor device 3 is brought into contact with the connection pattern 5.

48. 发明专利

JPH02218166A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH02218166A
公开(公告)日：1990-08-30
申请号：JP3806989
申请日：1989-02-17
申请人： TOSHIBA CORP , IBM JAPAN
发明人： IKEDA HIROYUKI , SHIMADA OSAMU , UCHIDA TERUO , MURAKAMI TAKAKIMI
IPC分类号： H01L29/78 , H01L29/786
摘要： PURPOSE:To reduce change in threshold voltage value with time and to perform stable driving by making the energy-band-gap width of a buffer layer provided between a gate insulating layer and a semiconductor layer larger than the energy-band-gap width of the semiconductor layer. CONSTITUTION:This transistor is composed of the following parts: a gate electrode 2; a gate insulating layer 3; a semiconductor layer 5; a buffer layer 4 which is provided between the gate insulating layer 3 and the semiconductor layer 5; a source electrode 6; and a drain electrode 7. The energy-band-gap width of the buffer layer 4 is made larger than the energy-band-gap width of the semiconductor layer 5. Since the buffer layer is provided between the gate insulating layer 3 and the semiconductor layer 5 in this way, the amount of change in threshold voltage value with time can be reduced, and the dispersion in threshold voltage value of each manufacturing lot can be suppressed.

49. 发明专利

JPS63119570A BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63119570A
公开(公告)日：1988-05-24
申请号：JP26502786
申请日：1986-11-07
申请人： TOSHIBA CORP
发明人： SHIMADA OSAMU , ITO HIROSHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72 , H01L29/732
摘要： PURPOSE:To provide a high-performance transistor with a minute configuration, by constituting a base layer with a recrystallized semiconductor film. CONSTITUTION:A wafer, in which an n-type layer 3 that is to become a collector layer is epitaxially grown on a high resistance p type single crystal Si substrate 1, is used. An n type embedded layer 2 is formed between the substrate 1 and the n-type layer 3. A p-type base layer 5, which is formed on the n-type layer 3, is obtained by recrystallizing a silicon film, which is deposited by a CVD method, by annealing. On the p-type base layer 5, an n-type emitter layer 6, which is formed with a silicon film deposited by a CVD method is provided. Since the base layer and the emitter layer are formed with the CVD films, the impurity concentration of the base layer is made especially high, and the width of the base is made thin. Thus a transistor having a step shaped ideal p-n junction is obtained.

50. 发明专利

JPS6348952A IMAGE SENSOR 失效
公开(公告)号：JPS6348952A
公开(公告)日：1988-03-01
申请号：JP19248386
申请日：1986-08-18
申请人： TOSHIBA CORP
发明人： SHIMADA OSAMU , SAITO TAMIO
IPC分类号： H04N1/028 , H04N5/335 , H04N5/369
摘要： PURPOSE:To obtain a good optical response characteristic and to execute the high speed of a reading speed by driving a photoconductive element with a duty ratio to satisfy prescribed conditions. CONSTITUTION:When an image formed at photoconductive elements D1-D1728 is read, analog switches S1-S108 are closed for a constant period and during respective periods, a pulse-shaped voltage is successively impressed from a during voltage generating circuit DR to row wirings LC1-LC16. Thus, a signal current from elements D1-D16,-D1728 is successively guided through common connecting wirings LA1-LA108 to a signal output line LO and a picture signal output Vout is obtained. At this time, the impressing period of the driving voltage to a row wiring LCi is made into T1, the impressing time is made into T2 and T2/T1>=0.034 is obtained. By the duty ratio of the driving voltage, an optical response characteristics is improved and a high speed reading is executed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式