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41. 发明专利

JP2004193567A Plasma processing method and plasma processing system 有权
公开(公告)号：JP2004193567A
公开(公告)日：2004-07-08
申请号：JP2003358432
申请日：2003-10-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , HIROSE JUN , OGASAWARA MASAHIRO , HIRANO TAICHI , SASAKI HIROMITSU , YOSHIDA TETSUO , SAITO MICHISHIGE , ISHIHARA HIROYUKI , OYABU ATSUSHI , NUMATA KOJI
IPC分类号： H05H1/46 , B08B7/00 , C23F4/00 , H01J37/32 , H01L21/304 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To optimize the plasma processing where radicals and ions act simultaneously. SOLUTION: In the plasma etching system, control of plasma density spatial distribution performed by varying the ratio of field strength between an outer upper electrode 36 and an inner upper electrode 38 has substantially no effect on the control of radical density spatial distribution performed by varying the ratio of flow rate of processing gas between central shower heads (62, 56a) and peripheral shower heads (64, 56a). Since dissociation of the processing gas jetted from the central shower heads and the peripheral shower heads takes place in an area directly below the inner upper electrode 38, the spatial distribution of the radical density is not influenced significantly when the balance of the field strength is varied between the inner upper electrode 38 and the outer upper electrode 36. COPYRIGHT: (C)2004,JPO&NCIPI

42. 发明专利

JP2004193566A Plasma processing system and plasma processing method 有权
公开(公告)号：JP2004193566A
公开(公告)日：2004-07-08
申请号：JP2003358425
申请日：2003-10-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , HIROSE JUN , OGASAWARA MASAHIRO , HIRANO TAICHI , SASAKI HIROMITSU , YOSHIDA TETSUO , SAITO MICHISHIGE , ISHIHARA HIROYUKI , OYABU ATSUSHI , NUMATA KOJI
IPC分类号： H05H1/46 , C23C16/00 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/306 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32577 , H01J37/32082 , H01J37/32174 , H01L21/31116
摘要： PROBLEM TO BE SOLVED: To obtain a plasma processing system in which the loss of high frequency energy is reduced by enhancing the transmission efficiency of high frequency power supplied to an upper electrode. SOLUTION: An outer upper electrode 36 is supplied with high frequency power from a high frequency power supply 52 through a power supply tube 50. The power supply tube 50 is made of a conductive plate, e.g. an aluminium plate or a copper plate, having a tubular, conical or similar shape. The power supply tube 50 has a lower end connected continuously with the outer upper electrode 36 in the circumferential direction and an upper end connected electrically with the lower end part of an upper power supply rod 46 through a connector 48. On the outside of the power supply tube 50, the side wall of a chamber 10 extends above the height position of an upper electrode 34 thus constituting a tubular earth conductor 10a. In such an arrangement, the power supply tube 50, the outer upper electrode 36 and the tubular earth conductor 10a form a coaxial line where the formers (36, 50) serve as a waveguide in a load circuit viewed from the connector 48. COPYRIGHT: (C)2004,JPO&NCIPI

43. 发明专利

JP2003124192A PLASMA PROCESSOR 审中-公开
公开(公告)号：JP2003124192A
公开(公告)日：2003-04-25
申请号：JP2001314479
申请日：2001-10-11
申请人： TOKYO ELECTRON LTD
发明人： HIROSE JUN , MATSUSHIMA KEIICHI
IPC分类号： H05H1/46 , C23C16/509 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor in which the consumption of a protection structure and an exhaust ring can be suppressed compared to a conventional case, an operating ratio can be improved, running cost can be reduced, abnormal discharge due to the leak of plasma to the exhaust ring is prevented and a satisfactory processing can be preformed. SOLUTION: First magnets 21 are disposed so that they are positioned below a lower electrode 2 and they surround the periphery of the lower electrode 2. Second magnets 22 are circularly disposed in heightwise positions near the ceiling of the vacuum chamber 1 along the side wall of the vacuum chamber 1. Third magnets 23 are circularly installed in heightwise positions near the exhaust ring 7 below the second magnets 22 along the side wall of the vacuum chamber 1. Then, a magnetic field is formed by the first magnets 21, the second magnets 22 and the third magnets 23 so that they cover the inner wall part (cylindrical member 14) of the vacuum chamber 1 and the surface of the exhaust ring 7.

44. 发明专利

JP2001338914A GAS INTRODUCING MECHANISM, METHOD FOR GAS INTRODUCTION, METHOD FOR DETECTING GAS LEAKAGE, AND VACUUM PROCESSING EQUIPMENT 失效
公开(公告)号：JP2001338914A
公开(公告)日：2001-12-07
申请号：JP2000160453
申请日：2000-05-30
申请人： TOKYO ELECTRON LTD
发明人： HIROSE JUN , HAMAMOTO SHINJI , KOIZUMI HIROSHI , NAKAGAWA KENICHI
IPC分类号： B01J3/02 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a gas introducing mechanism which fixes a gas pressure at a predetermined value in a short time when it supplies a gas to a space between mounting platforms and an object held on the surface to be processed, eliminates waste of gas, and achieves miniaturization of the mechanism. SOLUTION: The gas introducing mechanism 18 introduces a gas into a space between mounting platforms 2 and 6 and an object-to-be-processed W held on the surface of platforms 2 and 6 placed in a vacuum chamber 1 that can hold vacuum state. The gas introducing mechanism is equipped with a gas supply line 19 which supplies the gas into the space between the mounting platforms 2 and 6 and the object W to be processed on the platforms 2 and 6, a manometer 41 which measures the gas pressure in the gas supply line 19, a gas flow control valve 42 which is placed at upstream of the manometer 41 and controls the gas flow in the gas supply line 19, and a control means 36 which controls the gas flow control valve 42 to adjust the pressure level measured, by the manometer 41 to a set pressure level.

45. 发明专利

JP2001051724A FLOW RATE ABNORMALITY DETECTING METHOD OF PRESSURE TYPE FLOW PATE CONTROLLER 失效
公开(公告)号：JP2001051724A
公开(公告)日：2001-02-23
申请号：JP22602399
申请日：1999-08-10
申请人： OMI TADAHIRO , IIDA SEIICHI , TOKYO ELECTRON LTD , FUJIKIN KK
发明人： OMI TADAHIRO , IIDA SEIICHI , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI , UNO TOMIO , NISHINO KOJI , IKEDA SHINICHI , DOI RYOSUKE , IDETA EIJI
IPC分类号： G01F1/36 , F16K37/00 , G05B23/02 , G05D7/06
摘要： PROBLEM TO BE SOLVED: To give notice of flow rate abnormality due to the clogging of an orifice with simple constitution by measuring the amplitude of varying pressure of upstream-side pressure in response to the opening and closing of a control valve and giving notice of the clogging of the orifice when the pressure amplitude becomes smaller than a limit amplitude. SOLUTION: The amplitude of the varying pressure of the upstream-side pressure is measured in response to the opening and closing of the control valve and when the pressure amplitude becomes smaller than the limit amplitude, notice of the clogging of the orifice is given. When a clogging detection start signal is inputted from an external circuit 44, a CPU outputs a signal to check circuit 31, which outputs a set flow rate QS(t)=QSO+ΔQS composed of a stationary set flow rate QSO and a signal ΔQS for examination. This signal controls a driving part 8 through an amplifier circuit 33 to open and close the control valve CV. Namely, the examining circuit 31 while holding an orifice passing flow rate at the stationary flow rate QSO checks the clogging of the orifice with the signal ΔQS for examination.

46. 发明专利

JP2000349134A TREATER 失效
公开(公告)号：JP2000349134A
公开(公告)日：2000-12-15
申请号：JP15504099
申请日：1999-06-02
申请人： TOKYO ELECTRON LTD
发明人： OZAWA JUN , MATSUSHIMA KEIICHI , HIROSE JUN , MATSUMURA YOSHITO
IPC分类号： H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a treater which can contrive an increase in its throughput. SOLUTION: A treater, which is provided with a vacuum treating chamber 1, a load lock chamber 2 communicating with this chamber 1 and a carrying arm 6, which is provided in this chamber 2 and carrys a wafer W in the chamber 1 and carrys out the wafer W from the chamber 1, is structured by that a positioning mechanism 16, which detects a notch (a) notched in the wafer W to position the wafer W, is provided in the chamber 2 and the notch (a) notched in the wafer W is detected by the mechanism 16 simultaneously with an adjustment of a pressure in the chamber 2 to position the wafer W in the chamber 2.

47. 发明专利

JP2000322130A METHOD FOR VARIABLE FLUID FLOW RATE CONTROL BY FLOW FACTOR AND ITS DEVICE 失效
公开(公告)号：JP2000322130A
公开(公告)日：2000-11-24
申请号：JP12910999
申请日：1999-05-10
申请人： FUJIKIN KK , OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , MORIMOTO AKIHIRO , UNO TOMIO , IKEDA SHINICHI , DOI RYOSUKE , NISHINO KOJI , IDETA EIJI , MATSUMOTO ATSUSHI , UENOYAMA TOYOMI , YAMAJI MICHIO , HIROSE TAKASHI , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI
IPC分类号： G01F1/42 , G05D7/06
摘要： PROBLEM TO BE SOLVED: To obtain the method for performing high-precision flow rate control over different kinds of gas by one flow rate controller by calculating a factor under specific conditions and calculating the flow rate of another gas kind when the gas kind is circulated through the same orifice under conditions of the same upstream pressure and the same upstream temperature on condition that the calculated flow rate of one gas kind is specific. SOLUTION: Flow factors FF is calculated by gas kinds from FF=(k/γs)(2/(κ+1))1/(κ-1)(κ/((κ+1)R))1/2 and on condition that the calculated flow rate of a gas kind A is QA, the flow rate QB of a gas kind B is calculated from QB=(FFB/FFA)QA when the gas kind B is circulated through the same orifice under the conditions of the same upstream side pressure and the same upstream temperature. Here, γs is the density of gas in a standard state, κ is the specific heat ratio of the gas, R is the gas constant, (k) is a proportion constant which does not depend upon the gas kind, FFA is the flow factor of the gas kind A, and FFB is the flow factor of the gas kind B.

48. 发明专利

JP2000195921A CARRIER 失效
公开(公告)号：JP2000195921A
公开(公告)日：2000-07-14
申请号：JP36913998
申请日：1998-12-25
申请人： TOKYO ELECTRON LTD
发明人： OZAWA JUN , HIROSE JUN , HIROSE EIJI , OBARA MAKOTO
IPC分类号： B25J9/06 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a carrier in which simplification of constitution and reduction of cost are redized. SOLUTION: In a carrier which is installed in a load lock chamber, carries a wafer W in a treatment chamber 4 and carries out the wafer 4 from the chamber, the load lock chamber is divided into a first chamber 11 and a second chamber 12. A direct acting carrying arm 21, which carries in and out the wafer W is installed in the first chamber 11. A direct acting system 14, which drives the arm 21 rectilinearly, is installed in the second chamber 12. The pressure in the first chamber is set higher than that of the second chamber.

49. 发明专利

JP2012064671A Plasma processing apparatus, plasma processing method, and storage medium storing program for executing the same 有权
标题翻译：等离子体处理装置，等离子体处理方法和用于执行其的存储中间储存程序
公开(公告)号：JP2012064671A
公开(公告)日：2012-03-29
申请号：JP2010206020
申请日：2010-09-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OHATA MITSUTAKA , KIMURA HIDETOSHI , MAEDA SEIJI , HIROSE JUN , HIDA GO
IPC分类号： H01L21/3065 , H01L21/304
CPC分类号： H01J37/32642 , C23C16/52 , H01J37/32091 , H01L21/67069 , H01L21/68735
摘要： PROBLEM TO BE SOLVED: To suppress variation in voltage applied to a substrate periphery to control the top-face potential of a focus ring placed at a substrate susceptor of a plasma processing apparatus to a desired value, by enabling adjustment of the dielectric constant of a dielectric ring provided at the focus ring without exchanging the dielectric ring.SOLUTION: A plasma processing apparatus comprises: a susceptor 114 which has a substrate mount part for mounting a substrate W thereon, and to which high-frequency power is applied; a focus ring 210 which is integrally composed of an outer ring 214 disposed so as to surround the periphery of the substrate mounted on the substrate mount part and having a top face higher than the substrate, and an inner ring 212 extending to the inside of the outer ring and located under the periphery of the substrate and having a top face lower than the substrate; a dielectric ring 220 which is interposed between the focus ring and the susceptor; and a dielectric constant varying mechanism 250 which varies the dielectric constant of the dielectric ring.
摘要翻译：要解决的问题：为了抑制施加到基板周边的电压的变化，通过使电介质的调节来控制放置在等离子体处理装置的基板基座处的聚焦环的顶面电位为期望值设置在聚焦环上而不更换介电环的介电环的常数。解决方案：等离子体处理设备包括：基座114，其具有用于在其上安装衬底W并且施加高频电力的衬底安装部分; 聚焦环210，其一体地由外环214构成，外环214被设置为围绕安装在基板安装部上的基板的周边，并且具有高于基板的顶面;以及内环212，其延伸到并且位于所述基板的周边下方并且具有比所述基板低的顶面; 插入在聚焦环和基座之间的电介质环220; 以及改变介质环的介电常数的介电常数变化机构250。版权所有（C）2012，JPO＆INPIT

50. 发明专利

JP2001023958A MAGNETRON PLASMA PROCESSING APPARATUS AND PROCESSING METHOD 失效
公开(公告)号：JP2001023958A
公开(公告)日：2001-01-26
申请号：JP16487799
申请日：1999-06-11
申请人： TOKYO ELECTRON LTD
发明人： KUBOTA KAZUHIRO , TOZAWA SHIGEKI , HIROSE JUN , KOSHIISHI AKIRA , KONDO TOMOMI
IPC分类号： H01L21/302 , C23C16/50 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To obtain a magnetron plasma processing apparatus and a processing method, where plasma can be uniformly formed in a processing space, even if a work substrate is large. SOLUTION: A magnetron plasma processing apparatus is equipped with a chamber 1 where a work substrate 30 is introduced and which can be kept in vacuum, a pair of electrodes 2 and 16 which are provided inside the chamber 1 confronting each other, a power supply 10 which forms an electric field between the electrodes 2 and 16, a processing gas feed system 15 which feeds processing gas into the chamber 1, and a magnet 21 which forms a magnetic field that resides in a processing space and extends in a certain direction vertical with respect to the direction of the electric field, wherein a work substrate 30 arranged in the processing space in parallel with the electrodes 2 and 16 is subjected to magnetron plasma processing. The magnet 21 forms intensity gradient of a magnetic field in the direction vertical to the direction of a magnetic field, in a plane vertical to the direction of an electric field of the electrodes and also forms a magnetic field, which is equal in intensity through a wide region along the upper side edge of the work substrate 30 in an electron drift direction and its outer part.

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