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41. 再颁专利

USRE40662E1 Method of preparing a compound semiconductor crystal 有权
公开(公告)号：USRE40662E1
公开(公告)日：2009-03-17
申请号：US10640430
申请日：2003-08-13
申请人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
IPC分类号： C30B9/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.

42. 发明授权

US07025677B2 Game emulator program 有权
标题翻译：游戏模拟器程序
公开(公告)号：US07025677B2
公开(公告)日：2006-04-11
申请号：US10335880
申请日：2003-01-03
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： A63F13/00
CPC分类号： A63F13/52 , A63F13/10 , A63F2300/66 , G06T3/4023
摘要： The present disclosure is directed to a game emulator program that allows a game to be played on a game machine using a display device having a resolution that is lower than the resolution for which the game is designed, while reproducing a game image that is close to that of the original.
摘要翻译：本公开涉及一种游戏模拟器程序，其允许使用具有低于游戏设计的分辨率的分辨率的显示装置在游戏机上播放游戏，同时再现接近于游戏的游戏图像那原来的。

43. 发明授权

US06866714B2 Large size semiconductor crystal with low dislocation density 有权
标题翻译：具有低位错密度的大尺寸半导体晶体
公开(公告)号：US06866714B2
公开(公告)日：2005-03-15
申请号：US10430027
申请日：2003-05-05
申请人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42 , C30B35/00
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×1016 cm−3 and a carbon concentration of 0.5×1015 cm−3 to 1.5×1015 cm−3 with a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.
摘要翻译：大半导体晶体具有至少6英寸的直径和不大于1×10 -4 cm -2的低位错密度。该晶体优选为GaAs的单晶，或CdTe，InAs，GaSb，Si或Ge中的一种，并且可以具有不大于1×10 16 cm -3的正硼浓度和0.5×10 6的碳浓度 <15> cm -3至1.5×10 15 cm -3，在整个晶体中具有均匀的浓度。这种晶体可以形成具有低位错密度的非常薄的晶片。还公开了一种用于制造这种晶体的特殊方法和装置。

44. 发明授权

US06273947B1 Method of preparing a compound semiconductor crystal 有权
标题翻译：化合物半导体晶体的制备方法
公开(公告)号：US06273947B1
公开(公告)日：2001-08-14
申请号：US09274286
申请日：1999-03-22
申请人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
IPC分类号： C30B900
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015 cm−3 to 20×1015 cm−3 is prepared with high reproducibility.
摘要翻译：制备化合物半导体晶体的方法能够以高重现性将碳掺杂。该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

45. 发明授权

US5584929A Method for preparing compound semiconductor crystal 失效
标题翻译：化合物半导体晶体的制备方法
公开(公告)号：US5584929A
公开(公告)日：1996-12-17
申请号：US400925
申请日：1995-03-09
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： C30B11/00 , C30B11/04
CPC分类号： C30B29/42 , C30B11/00 , C30B11/002 , Y10S117/90 , Y10T117/10
摘要： A method of preparing a compound semiconductor crystal in a crucible involves first forming a boron or boron compound containing layer on an inner surface of the crucible and heat treating the same to form a B.sub.2 O.sub.3 containing layer. The resulting pretreated crucible is the employed for preparing the compound semiconductor crystal. By pretreating the crucible in this manner, it is possible to previously form a homogenous B.sub.2 O.sub.3 film on the crucible interior surface while preventing incomplete and heterogeneous coating of the B.sub.2 O.sub.3 film. Consequently, it is possible to prevent a raw material melt from wetting the crucible interior surface and thus to suppress polycrystallization, thereby preparing a compound semiconductor single crystal with an excellent yield.
摘要翻译：在坩埚中制备化合物半导体晶体的方法包括首先在坩埚的内表面上形成含硼化合物或含硼化合物层并对其进行热处理以形成含B2O3的层。所得预处理坩埚用于制备化合物半导体晶体。通过以这种方式预处理坩埚，可以预先在坩埚内表面上形成均匀的B2O3膜，同时防止B2O3膜的不均匀涂层。因此，可以防止原料熔体润湿坩埚内表面，从而抑制多晶化，从而以优异的成品率制备化合物半导体单晶。

46. 发明授权

US09797068B2 Method of producing semiconductor single crystal 有权
公开(公告)号：US09797068B2
公开(公告)日：2017-10-24
申请号：US13636477
申请日：2011-03-28
申请人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
发明人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
IPC分类号： C30B27/00 , C30B11/00 , C30B29/40
CPC分类号： C30B27/00 , C30B11/00 , C30B29/40
摘要： Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

47. 发明授权

US08848100B2 Information processing device, information processing system, and launch program and storage medium storing the same providing photographing functionality 有权
标题翻译：信息处理装置，信息处理系统以及存储相同提供拍摄功能的发射程序和存储介质
公开(公告)号：US08848100B2
公开(公告)日：2014-09-30
申请号：US12531586
申请日：2008-10-01
申请人： Masato Kuwahara , Kazunori Koshiishi , Yui Ehara , Ryo Fukasawa , Masahiro Imaizumi , Yoshihiro Matsushima , Yuki Onozawa , Hiroyuki Kono , Yoshihiro Iwasa , Tomohiro Kawase , Yusuke Akifusa , Tomohisa Saito
发明人： Masato Kuwahara , Kazunori Koshiishi , Yui Ehara , Ryo Fukasawa , Masahiro Imaizumi , Yoshihiro Matsushima , Yuki Onozawa , Hiroyuki Kono , Yoshihiro Iwasa , Tomohiro Kawase , Yusuke Akifusa , Tomohisa Saito
IPC分类号： H04N5/225
CPC分类号： A63F13/213 , A63F13/10 , A63F13/2145 , A63F13/215 , A63F13/26 , A63F13/95 , A63F2300/1081 , A63F2300/1087 , A63F2300/204 , A63F2300/301 , G06F1/1616 , G06F1/1643 , G06F1/1647 , G06F1/1656 , G06F1/1677 , G06F1/1686 , G06F1/1692 , G06F3/03545 , G06F3/0488 , G06F3/167 , G06F2200/1632 , H04B5/0031 , H04N1/00204 , H04N1/00965 , H04N1/2112 , H04N1/2129 , H04N1/2158 , H04N5/225 , H04N5/2252 , H04N5/23216 , H04N5/23293 , H04N2101/00 , H04N2201/0084 , H04N2201/216 , H04N2201/3264
摘要： A game device according to the present embodiment includes a camera as image pick-up means. An inner camera is accommodated in an upper housing. In addition, a microphone hole is provided in an inner surface of the upper housing so as to sense external sound through a microphone.
摘要翻译：根据本实施例的游戏装置包括作为图像拾取装置的相机。内部照相机容纳在上部外壳中。此外，麦克风孔设置在上壳体的内表面中，以便通过麦克风感测外部声音。

48. 发明授权

US08470090B2 AlN crystal and method for growing the same, and AlN crystal substrate 有权
标题翻译： AlN晶体和生长方法相同，和AlN晶体衬底
公开(公告)号：US08470090B2
公开(公告)日：2013-06-25
申请号：US11997153
申请日：2006-07-10
申请人： Naho Mizuhara , Michimasa Miyanaga , Tomohiro Kawase , Shinsuke Fujiwara
发明人： Naho Mizuhara , Michimasa Miyanaga , Tomohiro Kawase , Shinsuke Fujiwara
IPC分类号： C30B23/06
CPC分类号： C30B23/02 , C30B23/066 , C30B25/02 , C30B29/403 , Y10T428/2982
摘要： Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).
摘要翻译：提供适用于具有优异结晶度的各种类型的半导体器件的大直径AlN晶体，生长AlN晶体的方法和AlN晶体衬底。 AlN晶体生长方法是通过气相外延生长AlN晶体（4）到放置在晶体生长容器（12）内的晶体生长室（24）内的晶种衬底（2）上的方法，提供在反应室内，其特征在于，在晶体生长期间，含碳气体被供应到晶体生长室（24）的内部。

49. 发明申请

US20130008370A1 METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：生产半导体单晶的方法
公开(公告)号：US20130008370A1
公开(公告)日：2013-01-10
申请号：US13636477
申请日：2011-03-28
申请人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
发明人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
IPC分类号： C30B17/00
CPC分类号： C30B27/00 , C30B11/00 , C30B29/40
摘要： Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.
摘要翻译：涉及一种在半导体单晶中产生抑制缺陷的半导体晶体的制造方法。该制造方法包括以下步骤：在具有与底部连续的底部和主体部分的生长容器的内壁上形成氧化硼膜; 使氧化硼膜与含有氧化硅的氧化硼熔体接触，在生长容器的内壁上形成含有氧化硅的氧化硼膜; 在置于生长容器底部和底部的晶种上形成原料熔体; 并且从晶种侧固化原料熔融物以生长半导体单晶。

50. 发明授权

US08149315B2 System and method for changing display of an image during a changed state of electronic device 有权
标题翻译：在电子设备改变状态下改变图像显示的系统和方法
公开(公告)号：US08149315B2
公开(公告)日：2012-04-03
申请号：US12243355
申请日：2008-10-01
申请人： Yoshihiro Matsushima , Tomohiro Kawase
发明人： Yoshihiro Matsushima , Tomohiro Kawase
IPC分类号： H04N5/222
CPC分类号： G06F3/0482 , G06F3/04842 , G06F3/0488 , G06F9/445 , H04N5/23293 , H04N2101/00 , Y02D10/43
摘要： An information processing apparatus capable of being opened and closed includes storage means, display means, and taken image display control means. The storage means stores a taken image therein. The display means has a display screen provided in a surface which is located inside when the information processing apparatus is closed and which is located outside when the information processing apparatus is opened. The taken image display control means displays a taken image on the display screen, and changes a taken image to be displayed between before and after closing and opening the information processing apparatus when the information processing apparatus is closed and opened again.
摘要翻译：能够打开和关闭的信息处理装置包括存储装置，显示装置和拍摄图像显示控制装置。存储装置将拍摄图像存储在其中。显示装置具有设置在当信息处理装置关闭时位于内部并且当信息处理装置打开时位于外部的表面中的显示屏幕。拍摄图像显示控制装置在显示屏幕上显示拍摄图像，并且当信息处理装置再次闭合并打开时，在关闭和打开信息处理装置之前和之后改变要显示的拍摄图像。

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