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41. 发明申请

US20110237066A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：制造半导体器件的方法，半导体制造设备和存储介质
公开(公告)号：US20110237066A1
公开(公告)日：2011-09-29
申请号：US12920701
申请日：2009-02-20
申请人： Hiroshi Sato , Hitoshi Itoh , Kenji Matsumoto
发明人： Hiroshi Sato , Hitoshi Itoh , Kenji Matsumoto
IPC分类号： H01L21/768 , H01L21/308
CPC分类号： H01L21/67207 , H01L21/02063 , H01L21/02068 , H01L21/67253 , H01L21/67742 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/76843 , H01L21/76858 , H01L21/76861 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.
摘要翻译：本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。

42. 发明申请

US20110139272A1 PROCESS-GAS SUPPLY AND PROCESSING SYSTEM 审中-公开
标题翻译：过程气体供应和加工系统
公开(公告)号：US20110139272A1
公开(公告)日：2011-06-16
申请号：US12675222
申请日：2008-08-28
申请人： Kenji Matsumoto , Hitoshi Itoh
发明人： Kenji Matsumoto , Hitoshi Itoh
IPC分类号： F16K15/00
CPC分类号： C23C16/448 , C23C16/45561 , Y10T137/7837 , Y10T137/8593
摘要： A process-gas supply system 2 supplies a process gas diluted with a diluent gas to a gas using system 4. The process-gas supply system 2 includes a process gas tank 10, a diluent gas tank 12, a main gas duct 14 connecting the process gas tank 10 and the gas using system 4, and a diluent gas duct connecting the diluent gas tank 12 to the main gas duct. The respective main gas duct 14 and the diluent gas duct are provided with flow rate controllers FC1, FC2, and FC5. The diluent gas duct is connected to the main gas duct at a position on an immediately downstream side of one of a plurality of flow rate controllers other than the flow rate controller on the most downstream side. There is further provided a surplus-gas discharge duct 24 through which a surplus diluted process gas is discharged, the surplus-gas discharge duct 24 being connected to the main gas duct at a position on an immediately upstream side of one the flow rate controllers other than the flow rate controller on the most upstream side.
摘要翻译：处理气体供给系统2将用稀释气体稀释的处理气体供给到气体使用系统4.处理气体供给系统2包括处理气体罐10，稀释气体罐12，连接处理气罐10和气体使用系统4，以及将稀释气罐12连接到主气体管道的稀释气体管道。相应的主气体管道14和稀释气体管道设有流量控制器FC1，FC2和FC5。稀释气体管道在除了最下游侧的流量控制器之外的多个流量控制器之一的紧下游侧的位置处与主气体管道连接。还设置有多余的排气管24，多余的稀释处理气体通过该剩余气体排出管24排出，剩余气体排出管24在一个流量控制器其他的紧邻上游侧的位置连接到主气体管道比最上游侧的流量控制器。

43. 发明申请

US20100323512A1 METAL OXIDE FILM FORMATION METHOD AND APPARATUS 有权
标题翻译：金属氧化物膜形成方法和装置
公开(公告)号：US20100323512A1
公开(公告)日：2010-12-23
申请号：US12781934
申请日：2010-05-18
申请人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
发明人： Kenji Matsumoto , Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
IPC分类号： H01L21/3205
CPC分类号： C23C16/40 , C23C16/45557 , C23C16/46 , H01L21/02175 , H01L21/02271 , H01L21/0231 , H01L21/02315 , H01L21/28556 , H01L21/31604
摘要： [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.[Means for Solving the Problems] A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.
摘要翻译： [问题]提供一种能够控制金属氧化物的膜厚度的金属氧化物膜形成方法，即使金属氧化物受到自限制的厚度。解决问题的手段金属氧化物膜形成方法包括：在基材的温度达到金属氧化物膜的成膜温度之前，将金属源气体供给到碱的表面的工序（1）以及将基材的温度设定为成膜温度以上的工序（2），并且通过使供给到基材表面的金属源气体和底部表面残留的水分。

44. 发明申请

US20100233865A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20100233865A1
公开(公告)日：2010-09-16
申请号：US12720831
申请日：2010-03-10
申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
发明人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
IPC分类号： H01L21/02
CPC分类号： H01L21/31604 , H01L21/3145 , H01L28/40
摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.
摘要翻译：提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

45. 发明授权

US06252272B1 Semiconductor device, and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06252272B1
公开(公告)日：2001-06-26
申请号：US09267607
申请日：1999-03-15
申请人： Hiroshi Watanabe , Hitoshi Itoh , Ken Uchida
发明人： Hiroshi Watanabe , Hitoshi Itoh , Ken Uchida
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： A surface portion of a semiconductor substrate 41 is serrated at intervals equal to a minimum processing size to form impurity diffusion layers in peaks. These impurity diffusion layers are isolated from each other by valleys. At a valley where a gate is formed, the gate and impurity diffusion layers and in peaks on the two sides of the gate form a MOS transistor. A valley in which no gate is formed functions as an element isolation region. Since a MOS transistor or an element isolation region is formed in one valley, the element area is reduced. A surface of a p-type semiconductor substrate is serrated to form n+-type impurity regions in peaks and floating gates having an upper spired portion in valleys via a silicon oxide film. Control gates are formed on the floating gates via a tunnel oxide film. The lower portion of the control gate has a shape corresponding to the valley and opposes the upper portion of the floating gate by self-alignment. Data is written or erased by using a tunnel current flowing of electrons through the tunnel oxide film between the floating gate and control gate having the above-mentioned shapes and positional relationship. This achieves micropatterning and reduces the maximum operating voltage at the same time.
摘要翻译：半导体衬底41的表面部分以等于最小处理尺寸的间隔被锯齿，以在峰上形成杂质扩散层。这些杂质扩散层通过谷彼此隔离。在形成栅极的谷中，栅极和杂质扩散层以及栅极两侧的峰形成MOS晶体管。没有栅极的谷形成元件隔离区域。由于在一个谷中形成MOS晶体管或元件隔离区域，所以元件面积减小。p型半导体衬底的表面被锯齿形以形成峰顶中的n +型杂质区域和具有上部尖端部分的浮动栅极谷经硅氧化膜。控制栅极通过隧道氧化膜形成在浮动栅极上。控制栅极的下部具有与谷相对应的形状，并且通过自对准与浮栅的上部相对。通过使用电子流通过具有上述形状和位置关系的浮动栅极和控制栅极之间的隧道氧化物膜的隧道电流来写入或擦除数据。这实现了微图案化，同时降低了最大工作电压。

46. 发明授权

US5467725A Thread spreading apparatus for use in overlock sewing machine 失效
标题翻译：用于包缝机的螺纹撒布装置
公开(公告)号：US5467725A
公开(公告)日：1995-11-21
申请号：US254887
申请日：1994-06-06
申请人： Shuji Fujita , Yasushi Baba , Hitoshi Itoh , Shiro Satoma
发明人： Shuji Fujita , Yasushi Baba , Hitoshi Itoh , Shiro Satoma
IPC分类号： D05B1/20 , D05B61/00 , D05B63/00
CPC分类号： D05B61/00
摘要： A thread spreading apparatus for use in an overlock sewing machine capable of performing over-edge chain stitching and other stitching. The thread spreading apparatus uses a lower looper for over-edge chain stitching to allow a needle to surely drop into a triangle defined by a needle thread, a looper thread and the lower looper, thereby enabling multi-thread chain stitching and covering chain stitching to be performed without fail. The apparatus includes a thread spreading hook having hook portions with different heights for retaining needle threads and a projection formed on one of the hook portions. During stitching other than over-edge chain stitching, the hook portions of the thread spreading hook retain the needle threads when two needles drop, thereby allowing each needle to drop into a triangle defined by the looper thread, the lower looper and the corresponding needle thread. During over-edge chain stitching, the hook portions lie rearwardly of an idle chain stitch forming bore provided in a needle plate.
摘要翻译：一种用于能够进行超边缘链式缝合和其他缝合的包缝机中的线扩展装置。线扩展装置使用较低的打圈器进行超边缘链式缝合，以使针能够可靠地落入由针线，弯针线和下弯针限定的三角形中，从而实现多线链接和覆盖链式缝合不要失败地执行。该装置包括具有不同高度的钩部分以用于保持针线的螺纹铺展钩和形成在一个钩部上的突起。在缝合之外，除了上边缘的链式缝合之外，当两针落下时，延伸钩的钩部保持针线，从而允许每个针落入由弯针线，下弯针和相应的针线所限定的三角形。在超边缘链接缝合期间，钩部位于设置在针板中的空闲链式线圈形成孔的后方。

47. 发明授权

US09266146B2 Film forming method and processing system 有权
标题翻译：成膜方法及加工系统
公开(公告)号：US09266146B2
公开(公告)日：2016-02-23
申请号：US13807079
申请日：2011-06-24
申请人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
发明人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
IPC分类号： C23C16/00 , B05D5/12 , C23C16/40 , H01L21/768 , H01L23/532
CPC分类号： B05D5/12 , C23C16/40 , H01L21/76831 , H01L21/76846 , H01L21/76856 , H01L21/76861 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
摘要翻译：成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤在氧化膜上含有第二金属。

48. 发明授权

US08865590B2 Film forming method, pretreatment device, and processing system 有权
标题翻译：成膜方法，预处理装置和加工系统
公开(公告)号：US08865590B2
公开(公告)日：2014-10-21
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/00 , H01L21/768 , H01L21/3205 , H01L21/285 , H01L21/3105 , C23C16/40 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

49. 发明授权

US08765221B2 Film forming method and film forming apparatus 失效
标题翻译：成膜方法和成膜装置
公开(公告)号：US08765221B2
公开(公告)日：2014-07-01
申请号：US13616308
申请日：2012-09-14
申请人： Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
发明人： Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
IPC分类号： C23C16/40
CPC分类号： H01L21/76814 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3105 , H01L21/32051 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.
摘要翻译：成膜方法包括在成膜装置的处理室内配置有形成有绝缘膜的晶片的步骤，以及将含有硅原子的复合气体和供给OH基团的气体供给到表面改性工序处理室，使得Si-OH基形成在绝缘膜的表面上。成膜方法还包括将含有含锰材料的成膜气体供给到处理室中的成膜步骤，使得在Si-OH基团上具有的绝缘膜的表面上形成含锰膜通过CVD法形成。

50. 发明授权

US08619278B2 Printed matter examination apparatus, printed matter examination method, and printed matter examination system 有权
标题翻译：印刷检验仪器，印刷品检验方法和印刷品检验系统
公开(公告)号：US08619278B2
公开(公告)日：2013-12-31
申请号：US12926474
申请日：2010-11-19
申请人： Keiji Kojima , Hitoshi Itoh
发明人： Keiji Kojima , Hitoshi Itoh
IPC分类号： G06K15/00 , G06F3/12
CPC分类号： G06F3/1285 , G06F3/1208 , G06F3/1219 , G06F3/1243 , G06F3/1256
摘要： A printed matter examination apparatus includes a master data acquiring unit configured to acquire master data that is data for printing and contains code information that is converted for printing; a code information acquiring unit configured to acquire unconverted code information; a code information recognition unit configured to recognize the converted code information from the acquired master data; and a code information examination unit configured to compare the converted code information recognized by the code information recognition unit with the acquired unconverted code information and determine that the converted code information is incorrect when the converted code information is not identical to the unconverted code information.
摘要翻译：打印物检查装置包括主数据获取单元，被配置为获取作为用于打印的数据的主数据，并且包含转换为打印的代码信息; 代码信息获取单元，被配置为获取未转换的代码信息; 代码信息识别单元，被配置为从获取的主数据识别转换的代码信息; 以及代码信息检查单元，被配置为将所述代码信息识别单元识别的转换代码信息与所获取的未转换代码信息进行比较，并且当所转换的代码信息与未转换的代码信息不相同时，确定转换的代码信息不正确。

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