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41. 发明授权

US08713133B2 Methods, systems and computer program products for importing data from an edge router to a network management system 有权
标题翻译：用于从边缘路由器向网络管理系统导入数据的方法，系统和计算机程序产品
公开(公告)号：US08713133B2
公开(公告)日：2014-04-29
申请号：US11649481
申请日：2007-01-04
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： G06F15/177
CPC分类号： H04L41/0226 , H04L41/0213
摘要： Methods of importing data from an edge router including a plurality of interface types to a network management system include configuring the edge router to export a flat file containing the data at a designated time to a designated network device communicatively coupled to the edge router. The flat file includes data associated with a plurality of different ones of the interface types. The flat file is received at the designated network device. The data from the received flat file is parsed to a format configured to be imported by the network management system at the designated network device. The parsed data is provided to the network management system.
摘要翻译：从包括多个接口类型的边缘路由器将数据导入到网络管理系统的方法包括配置边缘路由器以将指定时间内包含数据的平面文件导出到通信地耦合到边缘路由器的指定网络设备。平面文件包括与多个不同接口类型相关联的数据。在指定的网络设备处接收平面文件。来自接收到的平面文件的数据被解析为被配置为由网络管理系统在指定网络设备处导入的格式。解析的数据被提供给网络管理系统。

42. 发明授权

US08357571B2 Methods of forming semiconductor contacts 有权
标题翻译：形成半导体触点的方法
公开(公告)号：US08357571B2
公开(公告)日：2013-01-22
申请号：US12879398
申请日：2010-09-10
申请人： Fabian Radulescu , Jennifer Gao , Jennifer Duc , Scott Sheppard
发明人： Fabian Radulescu , Jennifer Gao , Jennifer Duc , Scott Sheppard
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L21/28593 , H01L21/76804 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/475 , H01L29/66462 , H01L29/66871 , H01L29/812 , H01L29/872
摘要： Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.
摘要翻译：提供了形成具有定制触点的半导体器件的方法，包括提供第一绝缘体层和图案化第一绝缘体层，使得第一绝缘体层限定至少一个接触窗口。第二绝缘体层设置在第一绝缘体层上和在至少一个接触窗口中，使得第二绝缘体层至少部分地填充至少一个接触窗口。蚀刻第二绝缘体层的第一部分，使得第二绝缘体层的第二部分保留在至少一个接触窗口中，以提供具有不同于至少一个接触窗口的尺寸的尺寸的至少一个修改的接触窗口。还提供了相关的方法和装置。

43. 发明申请

US20100012952A1 Nitride-Based Transistors Having Laterally Grown Active Region and Methods of Fabricating Same 有权
标题翻译：具有横向生长活性区域的氮化物基晶体管及其制造方法相同
公开(公告)号：US20100012952A1
公开(公告)日：2010-01-21
申请号：US12564473
申请日：2009-09-22
申请人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
发明人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
IPC分类号： H01L29/778 , H01L29/24 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
摘要翻译：提供了高电子迁移率晶体管和/或制造高电子迁移率晶体管的方法，其包括具有垂直生长区域，横向生长区域和聚结区域的第一III族氮化物层。 III族氮化物沟道层设置在第一III族氮化物层上，III族氮化物阻挡层设置在III族氮化物沟道层上。漏极接触，源极接触和栅极接触设置在阻挡层上。栅极触点设置在第一III族氮化物层的横向生长区域上的阻挡层的一部分上，并且源极接触和/或漏极接触中的一个的至少一部分设置在屏障的一部分上在第一III族氮化物层的垂直生长区上。

44. 发明授权

US07548112B2 Switch mode power amplifier using MIS-HEMT with field plate extension 有权
标题翻译：开关模式功率放大器使用MIS-HEMT与现场板扩展
公开(公告)号：US07548112B2
公开(公告)日：2009-06-16
申请号：US11187171
申请日：2005-07-21
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H01L29/72
CPC分类号： H01L29/7787 , H01L21/28264 , H01L29/2003 , H01L29/267 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H03F3/189 , H03F3/217 , H03F3/2176
摘要： Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.
摘要翻译：公开了特别适用于开关模式功率放大器的开关模式功率放大器和场效应晶体管。晶体管优选为具有源极端子和漏极端子的复合高电子迁移率晶体管（HEMT），栅极端子位于其间并位于电介质材料上。场板从栅极端子延伸至少两层电介质材料朝向漏极。电介质层优选包括氧化硅和氮化硅。可以提供第三层氧化硅层，该氮化硅层位于氧化硅层之间。蚀刻选择性用于栅极端子的蚀刻凹槽。

45. 发明申请

US20090100040A1 LAWFUL INTERCEPTION OF BROADBAND DATA TRAFFIC 审中-公开
标题翻译：广泛的宽带数据传输障碍
公开(公告)号：US20090100040A1
公开(公告)日：2009-04-16
申请号：US12062208
申请日：2008-04-03
申请人： Scott Sheppard , Stephen Cersosimo , James R. Pennington
发明人： Scott Sheppard , Stephen Cersosimo , James R. Pennington
IPC分类号： G06F17/30
CPC分类号： H04L63/306
摘要： Methods, systems, and computer-readable media provide for lawfully intercepting broadband data traffic. According to one method, a request to retrieve a network address associated with a login identifier is received. An Authentication, Authorization and Accounting (AAA) server is queried based on the login identifier to retrieve the network address associated with the login identifier. Relevant data traffic and AAA information associated with the relevant data traffic is filtered at a network element. The relevant data traffic and the AAA information is forwarded to a law enforcement agency (LEA) system.
摘要翻译：方法，系统和计算机可读介质提供合法拦截宽带数据业务。根据一种方法，接收到检索与登录标识符相关联的网络地址的请求。基于登录标识符查询认证，授权和计费（AAA）服务器，以检索与登录标识符相关联的网络地址。相关数据业务和与相关数据业务相关联的AAA信息在网元进行过滤。相关数据流量和AAA信息被转发给执法机构（LEA）系统。

46. 发明申请

US20090041011A1 Lawful Interception of Broadband Data Traffic 审中-公开
标题翻译：合法拦截宽带数据流量
公开(公告)号：US20090041011A1
公开(公告)日：2009-02-12
申请号：US12062226
申请日：2008-04-03
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H04L12/50
CPC分类号： H04L63/306
摘要： Methods, systems, and computer-readable media provide for lawfully intercepting broadband data traffic. According to one aspect, a method for intercepting data traffic in a dedicated enterprise network comprising a range of contiguous Internet Protocol (IP) addresses is provided. According to the method, a plurality of provider edge (PE) routers and a plurality of provider (P) routers are deployed. Each of the PE routers is operatively coupled to each of the P routers in a multi-homed configuration, and each of the PE routers and P routers forms a communication link. The data traffic is intercepted across the communication links for the range of contiguous IP addresses.
摘要翻译：方法，系统和计算机可读介质提供合法拦截宽带数据业务。根据一个方面，提供一种用于截取包括一系列连续的因特网协议（IP）地址的专用企业网络中的数据业务的方法。根据该方法，部署了多个提供者边缘（PE）路由器和多个提供商（P）路由器。每个PE路由器以多宿主配置可操作地耦合到每个P路由器，并且每个PE路由器和P路由器形成通信链路。数据流量在连续IP地址范围内通过通信链路拦截。

47. 发明申请

US20070140133A1 Methods and systems for providing outage notification for private networks 审中-公开
标题翻译：为私人网络提供中断通知的方法和系统
公开(公告)号：US20070140133A1
公开(公告)日：2007-06-21
申请号：US11300754
申请日：2005-12-15
申请人： Chandu Gudipalley , Scott Sheppard , Shahram Amid
发明人： Chandu Gudipalley , Scott Sheppard , Shahram Amid
IPC分类号： H04J3/14
CPC分类号： H04L41/065 , H04L41/5009 , H04L41/5022 , H04L43/00 , H04L43/0811 , H04L43/0829 , H04L43/0852 , H04L43/0864 , H04L43/087 , H04L43/16
摘要： Systems and methods provide outage notification. The disclosed systems and methods may include collecting network performance measurement data and processing the collected network performance measurement data in to a plurality of child events. Furthermore, the systems and methods may include correlating the plurality of child events according to at least one rule into a parent event. Moreover, the systems and methods may include generating a trouble ticket based upon the parent event.
摘要翻译：系统和方法提供中断通知。所公开的系统和方法可以包括收集网络性能测量数据并将收集的网络性能测量数据处理到多个子事件中。此外，系统和方法可以包括根据至少一个规则将多个子事件相关联到父事件中。此外，系统和方法可以包括基于父事件生成故障单。

48. 发明申请

US20060202272A1 Wide bandgap transistors with gate-source field plates 审中-公开
标题翻译：具有栅源场的宽带隙晶体管
公开(公告)号：US20060202272A1
公开(公告)日：2006-09-14
申请号：US11078265
申请日：2005-03-11
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
IPC分类号： H01L29/739
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/404 , H01L29/7787
摘要： A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A spacer layer is on at least part of the surface of the plurality of active region between the gate and the drain electrode and between the gate and the source electrode. A field plate is on the spacer layer and extends on the spacer and over the active region toward the drain electrode. The field plate also extends on the spacer layer over the active region and toward the source electrode. At least one conductive path electrically connects the field plate to the source electrode or the gate.
摘要翻译：一种晶体管，包括具有沟道层的有源区，源极和漏极形成为与有源区接触，栅极形成在源极和漏极之间并与有源区接触。间隔层位于栅极和漏电极之间以及栅极和源极之间的多个有源区的表面的至少一部分上。场板位于间隔层上并且在间隔物上延伸并且在有源区上方朝向漏电极延伸。场板还在有源区上的间隔层上延伸并且朝向源电极延伸。至少一个导电路径将场板电连接到源电极或栅极。

49. 发明申请

US20060065910A1 Method of forming vias in silicon carbide and resulting devices and circuits 有权
公开(公告)号：US20060065910A1
公开(公告)日：2006-03-30
申请号：US11067543
申请日：2005-02-25
申请人： Zoltan Ring , Scott Sheppard , Helmut Hagleitner
发明人： Zoltan Ring , Scott Sheppard , Helmut Hagleitner
IPC分类号： H01L31/0328 , H01L21/336
CPC分类号： H01L21/76898 , H01L21/0445 , H01L21/3065 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/452 , H01L29/7787 , H01L29/812
摘要： A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate.

50. 发明授权

US06998322B2 Methods of fabricating high voltage, high temperature capacitor and interconnection structures 有权
公开(公告)号：US06998322B2
公开(公告)日：2006-02-14
申请号：US10382826
申请日：2003-03-06
申请人： Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Scott Sheppard , Helmut Hagleitner
发明人： Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Scott Sheppard , Helmut Hagleitner
IPC分类号： H01L21/20 , H01L21/4763
CPC分类号： H01L29/7802 , H01G4/1272 , H01G4/20 , H01G4/33 , H01L21/045 , H01L21/049 , H01L27/0805 , H01L28/40 , H01L29/1608 , H01L29/408 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/78 , H01L29/8611 , H01L29/94
摘要： Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.

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