专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20110056746A1 ELECTRIC FIELD MODIFICATION ABOUT A CONDUCTIVE STRUCTURE 审中-公开
标题翻译：关于导电结构的电场修改
公开(公告)号：US20110056746A1
公开(公告)日：2011-03-10
申请号：US12715735
申请日：2010-03-02
申请人： Kasegn D. Tekletsadik , Russell J. Low
发明人： Kasegn D. Tekletsadik , Russell J. Low
IPC分类号： H02G3/00 , H01B7/00
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/16 , H01J2237/0206 , H01J2237/026 , H01J2237/038 , H01J2237/08
摘要： An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor.
摘要翻译：一种装置包括导电结构和布置在导电结构的外部附近的绝缘导体，以修改围绕导电结构的电场。绝缘导体具有介于绝缘体上的介电强度大于75千伏（kV）/英寸的导体周围。

42. 发明授权

US07863520B2 Interfacing two insulation parts in high voltage environment 失效
标题翻译：在高压环境下接合两个绝缘部件
公开(公告)号：US07863520B2
公开(公告)日：2011-01-04
申请号：US11838360
申请日：2007-08-14
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/02
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
摘要翻译：公开了在高压环境中部分接口的相关结构的方法。一种方法包括：在高压环境中在第一部分和第二部分之间提供绝缘介质; 并且通过将第一部分和第二部分压靠绝缘介质来将第一部分和第二部分接合。

43. 发明申请

US20090047801A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT 失效
标题翻译：在高压环境中连接两个绝缘部件
公开(公告)号：US20090047801A1
公开(公告)日：2009-02-19
申请号：US11838360
申请日：2007-08-14
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R29/00
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：在高压环境中在第一部分和第二部分之间提供绝缘介质; 并且通过将第一部分和第二部分压靠绝缘介质来将第一部分和第二部分接合。

44. 发明授权

US07491947B2 Technique for improving performance and extending lifetime of indirectly heated cathode ion source 有权
标题翻译：提高间接加热阴极离子源的性能和延长使用寿命的技术
公开(公告)号：US07491947B2
公开(公告)日：2009-02-17
申请号：US11505168
申请日：2006-08-16
申请人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
发明人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
IPC分类号： H01J27/08
CPC分类号： H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/022
摘要： A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.
摘要翻译：公开了一种提高间接加热的阴极离子源的性能和寿命的技术。在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入机中间接加热的阴极（IHC）离子源的性能和寿命的方法。该方法可以包括在维护离子注入机期间将IHC离子源的电弧室保持在真空下，其中没有气体被供应到电弧室。该方法还可以包括通过向灯丝提供电流来加热IHC离子源的阴极。该方法还可以包括以0.5-5A的电流水平相对于灯丝偏置阴极而不使电弧室相对于阴极偏置。该方法还包括保持源磁体在电弧室内产生磁场。

45. 发明授权

US07476877B2 Wafer charge monitoring 有权
标题翻译：晶圆充电监控
公开(公告)号：US07476877B2
公开(公告)日：2009-01-13
申请号：US11353820
申请日：2006-02-14
申请人： Russell J. Low , George M. Gammel , Peter F. Kurunczi , Eric Cobb
发明人： Russell J. Low , George M. Gammel , Peter F. Kurunczi , Eric Cobb
IPC分类号： H01J37/30
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.
摘要翻译：电荷监测系统可以包括具有被配置为在其上接受晶片的表面的压板和相对于压板设置的电荷监测器，使得离子束同时撞击电荷监测器的一部分和晶片的一部分。电荷监视器被配置为当离子束同时撞击电荷监视器的部分和晶片的部分时，提供表示晶片表面上的电荷的电荷监测信号。电荷监测信号至少部分地取决于离子束的束电位。

46. 发明授权

US07459704B2 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US07459704B2
公开(公告)日：2008-12-02
申请号：US11269033
申请日：2005-11-08
申请人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
发明人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

47. 发明授权

US08768040B2 Substrate identification and tracking through surface reflectance 有权
标题翻译：基板识别和跟踪通过表面反射率
公开(公告)号：US08768040B2
公开(公告)日：2014-07-01
申请号：US13006545
申请日：2011-01-14
申请人： Benjamin Riordon , Russell J. Low
发明人： Benjamin Riordon , Russell J. Low
IPC分类号： G06K9/00
CPC分类号： H01L31/0682 , G06K9/00577 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
摘要翻译：公开了一种识别单个硅衬底，特别是太阳能电池的方法。每个太阳能电池都具有独特的光学特性。该方法识别这些属性并将其存储在数据库中，并将其与特定的太阳能电池相关联。与传统跟踪技术不同，本方法不需要硅衬底表面上的专用空间。该方法允许通过制造过程以及在基板的整个寿命期间跟踪基板。

48. 发明申请

US20120101742A1 METHOD AND SYSTEM FOR IN-SITU MONITORING OF CATHODE ERSOSION AND PREDICTING CATHODE LIFETIME 有权
标题翻译：阴离子渗透和预测阴茎生物的现场监测方法与系统
公开(公告)号：US20120101742A1
公开(公告)日：2012-04-26
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G06F19/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源极偏置功率值，测量第一配置中阴极的源偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

49. 发明申请

US20110089342A1 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：US20110089342A1
公开(公告)日：2011-04-21
申请号：US12756020
申请日：2010-04-07
申请人： Kevin M. Daniels , Russell J. Low , Benjamin B. Riordon
发明人： Kevin M. Daniels , Russell J. Low , Benjamin B. Riordon
IPC分类号： G21K5/10 , B32B3/30
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/024 , H01J2237/045 , H01J2237/31711 , H01L31/18 , Y10T428/2457
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。掩模可以并入基板处理系统中，例如离子注入系统。掩模可以包括第一基底; 以及彼此间隔开的多个手指以限定一个或多个间隙。

50. 发明授权

US07821213B2 Techniques for controlling a charged particle beam 有权
标题翻译：用于控制带电粒子束的技术
公开(公告)号：US07821213B2
公开(公告)日：2010-10-26
申请号：US11865336
申请日：2007-10-01
申请人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
发明人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
IPC分类号： H05H9/00
CPC分类号： H05H7/04 , H01J37/08 , H01J37/3171 , H01J2237/002 , H01J2237/04735 , H01J2237/304
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速器柱，其可以包括多个电极。多个电极可以具有带电粒子束可以通过的孔。带电粒子加速/减速系统还可以包括电压分级系统。电压分级系统可以包括第一流体储存器和第一流体回路。第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。电压分级系统还可以包括第一流体回路中的流体。流体可能具有电阻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式