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    • 46. 发明授权
    • Tuning optical cavities
    • 调谐光腔
    • US07817281B2
    • 2010-10-19
    • US11702320
    • 2007-02-05
    • Peter KieselOliver SchmidtMichael BasslerUma Srinivasan
    • Peter KieselOliver SchmidtMichael BasslerUma Srinivasan
    • G01B9/02
    • H01S3/08081G01J3/26H01S3/105
    • An inhomogeneous optical cavity is tuned by changing its shape, such as by changing reflection surface positions to change tilt angle, thickness, or both. Deformable components such as elastomer spacers can be connected so that, when deformed, they change relative positions of structures with light-reflective components such as mirrors, changing cavity shape. Electrodes can cause deformation, such as electrostatically, electromagnetically, or piezoelectrically, and can also be used to measure thicknesses of the cavity. The cavity can be tuned, for example, across a continuous spectrum, to a specific wavelength band, to a shape that increases or decreases the number of modes it has, to a series of transmission ranges each suitable for a respective light source, with a modulation that allows lock-in with photosensing for greater sensitivity, and so forth. The optical cavity can be a linear variable filter fabricated on the photosensitive surface of a photosensing component such as a photosensor array or a position-sensitive detector.
    • 通过改变其形状来调整不均匀的光学腔,例如通过改变反射面位置来改变倾斜角,厚度或两者。 变形部件如弹性体间隔件可以连接,使得当变形时,它们改变结构与诸如反射镜的光反射部件的相对位置,改变腔体形状。 电极可能导致变形,例如静电,电磁或压电,也可用于测量腔的厚度。 空腔可以例如通过连续光谱被调谐到特定波长带,以使其具有的模式数量增加或减少的形状调整到各自适用于相应光源的一系列传输范围,其中 允许通过光敏锁定来实现更高灵敏度的调制,等等。 光腔可以是制造在诸如光电传感器阵列或位置敏感检测器的感光部件的感光表面上的线性可变滤波器。
    • 48. 发明授权
    • SRAM ring oscillator
    • SRAM环形振荡器
    • US07142064B2
    • 2006-11-28
    • US10973366
    • 2004-10-26
    • Yuen H. ChanUma Srinivasan
    • Yuen H. ChanUma Srinivasan
    • H03K3/03G01R23/00G01R31/26
    • G01R31/318364G01R31/31725H03K3/0322
    • An SRAM design evaluation circuit topology has the gates of the SRAM cell pass Gate Field Effect Transistors (FETs) connected to the cross-coupled gates of the inverter pair of the SRAM cell. This evaluation circuit typology is used in a full cell implementation. A series of full cells are interconnected one to another in a loop to form a ring oscillator. The output of the ring is frequency divided and measured to study the read and write behavior of the cell design. Similarly, half-cells, with the gates of their pass gates grounded, are interconnected one to another to form a ring oscillator, the output of which is frequency divided and measured to help isolate pass gate impact on memory function. The modified SRAM cell topology, connected as a ring oscillator in hardware, can be used to fully characterize an SRAM cell design, without the use of peripheral read/write circuitry.
    • SRAM设计评估电路拓扑结构具有连接到SRAM单元的反相器对的交叉耦合栅极的SRAM单元通过栅极场效应晶体管(FET)的栅极。 该评估电路类型用于全单元实现。 一系列完整的单元在一个环路中互相连接形成一个环形振荡器。 环的输出被分频和测量,以研究单元设计的读写行为。 类似地,其通路门的栅极接地的半电池互相互连以形成环形振荡器,其输出被分频和测量,以帮助隔离通道对存储器功能的影响。 作为硬件环形振荡器连接的修改后的SRAM单元拓扑可用于完全表征SRAM单元设计,而无需使用外设读/写电路。