专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08444869B1 Simultaneous front side ash and backside clean 有权
标题翻译：同时前侧灰尘和背面清洁
公开(公告)号：US08444869B1
公开(公告)日：2013-05-21
申请号：US12786230
申请日：2010-05-24
申请人： Haruhiro Harry Goto , David Cheung
发明人： Haruhiro Harry Goto , David Cheung
IPC分类号： H01L21/302
CPC分类号： H01L21/67028 , H01J2237/335 , H01L21/02057 , H01L21/0209 , H01L21/6719 , H01L21/67748 , H01L21/68771 , Y10S134/902 , Y10S438/906
摘要： A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.
摘要翻译：一种用于清洁晶片的方法和装置。晶片被加热并移动到设备内的处理站，该处理站具有永久地处于压板下降位置的压板，或者可以从压板向上位置传递到压板向下位置。将晶片定位在压板上方，以便不与压板接触并在压板和晶片之间提供间隙。可以通过将压板放置在压板向下位置来产生间隙。等离子体流入间隙，以能够从晶片正面，背面和边缘同时移除材料。该设备可以包括具有位于其中的间隙的单个处理站，或者该设备可以包括多个处理站，每个处理站能够在其中形成间隙，以从晶片前侧，后侧和边缘同时移除附加材料。

42. 发明授权

US08409249B2 Systems, methods, and compositions for achieving closure of suture sites 失效
公开(公告)号：US08409249B2
公开(公告)日：2013-04-02
申请号：US12079049
申请日：2008-03-24
申请人： Olexander Hnojewyj , Bruce Addis , Daniel Browne , David Cheung
发明人： Olexander Hnojewyj , Bruce Addis , Daniel Browne , David Cheung
IPC分类号： A61B17/08
CPC分类号： A61B17/0057 , A61B17/00491 , A61B2017/00004 , A61B2017/00495 , A61B2017/00637 , A61B2017/0065 , A61B2017/00654 , A61B2017/00663
摘要： Systems and methods employ functional instruments to close incisions and wounds using a suture knot in combination with a biocompatible material composition. The systems and methods are well suited for use, for example, at a vascular puncture site following a vascular access procedure.

43. 发明申请

US20120135376A1 Collagen Biomaterial Wedge 审中-公开
标题翻译：胶原生物材料楔
公开(公告)号：US20120135376A1
公开(公告)日：2012-05-31
申请号：US13262541
申请日：2010-03-30
申请人： David Cheung , Edwin Shors , William Knox
发明人： David Cheung , Edwin Shors , William Knox
IPC分类号： A61C19/06 , B29C39/38 , A61P43/00 , A61C5/14 , A61K9/00 , A61K38/39
CPC分类号： A61C8/0006 , A61L27/24 , A61L27/50 , A61L27/56 , A61L27/58 , A61L2430/02
摘要： A biocompatible, resorbable collagen membrane having a wedge shape with a thick edge of relatively higher strength and rigidity and a thin edge of relatively higher deformability and elasticity, which membrane is bendable to a desired configuration and is sufficiently rigid to retain the bent configuration upon implantation at a surgical site; a method of making such a membrane, and the use of such a membrane in a “sinus lift” procedure for augmenting alveolar bone.
摘要翻译：具有楔形形状的生物相容性可再吸收的胶原膜，其具有相对较高强度和刚性的较厚边缘以及相对较高变形能力和弹性的薄边缘，该膜可弯曲成所需构型，并且足够刚性以在植入时保持弯曲构型在手术部位; 制造这种膜的方法，以及在“窦升高”方法中使用这种膜来增加牙槽骨。

44. 发明申请

US20110139175A1 ENHANCED PASSIVATION PROCESS TO PROTECT SILICON PRIOR TO HIGH DOSE IMPLANT STRIP 有权
标题翻译：增强钝化过程以保护高剂量植入物条带
公开(公告)号：US20110139175A1
公开(公告)日：2011-06-16
申请号：US12963503
申请日：2010-12-08
申请人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
发明人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
IPC分类号： H05H1/24 , B08B13/00 , B08B7/00
CPC分类号： H01L21/31138 , H01J37/32357 , H01L21/02057
摘要： Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
摘要翻译：提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。

45. 发明申请

US20110126196A1 CORE-BASED VISUALIZATION 有权
标题翻译：基于核心的可视化
公开(公告)号：US20110126196A1
公开(公告)日：2011-05-26
申请号：US12626432
申请日：2009-11-25
申请人： David Cheung , Mani Prasad Kancherla , Deepak Kothari , Gary Hemminger
发明人： David Cheung , Mani Prasad Kancherla , Deepak Kothari , Gary Hemminger
IPC分类号： G06F9/50
CPC分类号： G06F9/5077 , G06F9/45533 , G06F9/45537 , H04L12/6418 , H04L29/06176 , H04M7/006
摘要： Techniques for providing core-based virtualization based upon cores provided by one or more processors of a system. A device such as a network device comprising multiple processor cores provides for core-based virtualization.
摘要翻译：基于由系统的一个或多个处理器提供的核提供基于核心的虚拟化的技术。包括多个处理器核心的诸如网络设备的设备提供基于核心的虚拟化。

46. 发明授权

US07760694B2 Deviating from a transmission map to communicate in a wireless network 失效
标题翻译：偏离传输图，在无线网络中进行通信
公开(公告)号：US07760694B2
公开(公告)日：2010-07-20
申请号：US11458476
申请日：2006-07-19
申请人： David Cheung , Sathish K. Kumar
发明人： David Cheung , Sathish K. Kumar
IPC分类号： H04W4/00
CPC分类号： H04W72/1257 , H04W88/04
摘要： Direct communication between devices in a wireless network without going through a base station is described herein. Such communication may be possible by deviating from a transmission map to be broadcasted by the base station of the wireless network.
摘要翻译：这里描述了无需通过基站的无线网络中的设备之间的直接通信。可以通过偏离由无线网络的基站广播的传输图来实现这种通信。

47. 发明授权

US07651725B2 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond 有权
标题翻译：由介于硅 - 碳键的硅化合物制成的低介电常数膜
公开(公告)号：US07651725B2
公开(公告)日：2010-01-26
申请号：US11923037
申请日：2007-10-24
申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
IPC分类号： B05D5/12 , H01L21/4763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
摘要翻译：一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

48. 发明申请

US20080061439A1 LOW DIELECTRIC CONSTANT FILM PRODUCED FROM SILICON COMPOUNDS COMPRISING SILICON-CARBON BOND 审中-公开
公开(公告)号：US20080061439A1
公开(公告)日：2008-03-13
申请号：US11877488
申请日：2007-10-23
申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
IPC分类号： H01L23/48
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

49. 发明授权

US07202176B1 Enhanced stripping of low-k films using downstream gas mixing 有权
标题翻译：使用下游气体混合来增强低k膜的剥离
公开(公告)号：US07202176B1
公开(公告)日：2007-04-10
申请号：US11011273
申请日：2004-12-13
申请人： Haruhiro Harry Goto , David Cheung , Prabhat Kumar Sinha
发明人： Haruhiro Harry Goto , David Cheung , Prabhat Kumar Sinha
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/02063 , C01B3/00 , C01B7/20 , G03F7/427 , H01J37/32357 , H01J2237/3342 , H01L21/31138
摘要： The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
摘要翻译：本发明涉及从工件去除不想要的材料的方法。更具体地，本发明涉及在半导体制造期间剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残余物。方法包括在与惰性气体的下游混合中实施氢等离子体操作。本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。

50. 发明申请

US20050156317A1 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds 审中-公开
标题翻译：由介于硅 - 碳键的硅化合物制成的低介电常数膜
公开(公告)号：US20050156317A1
公开(公告)日：2005-07-21
申请号：US11056459
申请日：2005-02-11
申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
摘要翻译：一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式