专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US5520563A Method of making a field emission device anode plate having an integrated getter 失效
标题翻译：制造具有集成吸气剂的场致发射器件阳极板的方法
公开(公告)号：US5520563A
公开(公告)日：1996-05-28
申请号：US474429
申请日：1995-06-07
申请人： Robert M. Wallace , Bruce E. Gnade , Chi-Cheong Shen , Jules D. Levine , Robert H. Taylor
发明人： Robert M. Wallace , Bruce E. Gnade , Chi-Cheong Shen , Jules D. Levine , Robert H. Taylor
IPC分类号： H01J9/14 , H01J9/39 , H01J29/08 , H01J29/32 , H01J29/94 , H01J31/12 , H01J9/227
CPC分类号： H01J29/94 , H01J29/085 , H01J2329/00
摘要： An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48.sub.R, 48.sub.G and 48.sub.B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.
摘要翻译：用于场致发射平板显示装置的阳极板40包括透明平面基板42，该透明平面基板42具有由荧光体48R，48G和48B覆盖的多个导电平行条带46，其包括该装置的阳极电极，以及吸收材料52优选地选自锆 - 铁 - 铁和钡。吸气剂52可以通过在选定的时间通过电流或者通过在发射极衬底上的微尖端的电子轰击来热再活化。吸气剂52可以形成在形成在导体46之间的空间中固定到基底42上的基本上不透明的电绝缘材料50上，所述空间充当环境光进入和离开装置的通道的屏障。公开了在阳极板40上制造吸气条52的方法。

42. 发明授权

US5316793A Directed effusive beam atomic layer epitaxy system and method 失效
标题翻译：导向射流原子层外延系统及方法
公开(公告)号：US5316793A
公开(公告)日：1994-05-31
申请号：US919685
申请日：1992-07-27
申请人： Robert M. Wallace , Bruce E. Gnade
发明人： Robert M. Wallace , Bruce E. Gnade
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45517 , C30B25/14
摘要： A system and method for epitaxial growth of high purity materials on an atomic or molecular layer by layer basis wherein a substrate is placed in an evacuated chamber which is evacuated to a pressure of less than about 10.sup.-9 Torr and predetermined amounts of predetermined precursor gases are injected into the chamber from a location in the chamber closely adjacent the substrate to form the atomic or molecular layer at the surface of the substrate while maintaining the pressure at less than about 10.sup.-9 Torr in the chamber in regions thereof distant from the substrate. The precursor gases are provided from a plurality of tanks containing the precursor gases therein under predetermined pressure and predetermined ones of the tanks are opened to the chamber for predetermined time periods while maintaining the pressure in the tanks. A dose limiting structure is provided for directing predetermined amounts of the precursor gases principally at the substrate with a dose limiting directional structure.
摘要翻译：一种用于以原子或分子层为基础外延生长高纯度材料的系统和方法，其中将衬底放置在抽真空至小于约10-9乇的压力的预抽真空室中，并将预定量的预定前体气体从与基板紧邻的室中的位置注入室中，以在基板的表面处形成原子层或分子层，同时在远离基板的区域中将室内的压力维持在小于约10-9乇。前体气体由预定压力下容纳其中的前体气体的多个容器提供，并且预定的这些罐在腔室中保持预定的时间段同时保持在罐中的压力。提供了剂量限制结构，用于以剂量限制的方向结构主要在衬底上引导预定量的前体气体。

43. 发明授权

US4567432A Apparatus for testing integrated circuits 失效
标题翻译：集成电路测试装置
公开(公告)号：US4567432A
公开(公告)日：1986-01-28
申请号：US490001
申请日：1983-06-09
申请人： Douglas A. Buol , Dean N. Mize , John W. Pattschull , Robert M. Wallace
发明人： Douglas A. Buol , Dean N. Mize , John W. Pattschull , Robert M. Wallace
IPC分类号： H01L21/66 , G01R1/073 , G01R31/28 , G01R1/06 , G01R31/26
CPC分类号： G01R31/2891
摘要： A system for statically and dynamically testing an integrated circuit die in wafer form at various temperatures includes a multilayer support fixture in which the probes, the static test switching circuitry, and the dynamic test switching circuitry are mounted on separate, spaced apart, planar layers detachably connected to one another, the probe and the probe support board being formed of materials having a low temperature coefficient of thermal expansion. A heated/cooled wafer positioning chuck controls the temperature of the wafer thereon during static and dynamic testing.
摘要翻译：用于在各种温度下以晶片形式静态和动态地测试集成电路管芯的系统包括多层支撑夹具，其中探针，静态测试开关电路和动态测试开关电路可拆卸地安装在分开的间隔开的平面层上彼此连接，探针和探针支撑板由具有低温度热膨胀系数的材料形成。加热/冷却的晶片定位卡盘在静态和动态测试期间控制其上的晶片的温度。

44. 发明申请

US20100224851A1 SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION 有权
标题翻译：使用离子植入法合成来自金属碳解决方案的石墨
公开(公告)号：US20100224851A1
公开(公告)日：2010-09-09
申请号：US12706116
申请日：2010-02-16
申请人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L29/15 , C04B35/536 , H01L21/20
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，将凹陷区域图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

45. 发明授权

US06624944B1 Fluorinated coating for an optical element 失效
标题翻译：用于光学元件的氟化涂层
公开(公告)号：US06624944B1
公开(公告)日：2003-09-23
申请号：US08824594
申请日：1997-03-26
申请人： Robert M. Wallace , Marvin W. Cowens , Steven A. Henck
发明人： Robert M. Wallace , Marvin W. Cowens , Steven A. Henck
IPC分类号： G02B110
CPC分类号： G02B26/0841 , G02B1/105 , G02B1/16
摘要： A protective cover (10) for an optical device, such as a spatial light modulator or an infrared detector or receiver. The cover (10) has an optically transmissive window (11), which has a coating (12) on one or both of its surfaces. The coating (12) is made from a halogenated material, which is deposited to form a chemical bond with the surface of the window (11).
摘要翻译：用于光学装置的保护盖（10），例如空间光调制器或红外检测器或接收器。盖（10）具有透光窗（11），其在其一个表面或两个表面上具有涂层（12）。涂层（12）由卤化材料制成，其被沉积以与窗口（11）的表面形成化学键。

46. 发明授权

US06040230A Method of forming a nano-rugged silicon-containing layer 失效
标题翻译：形成纳米坚固的含硅层的方法
公开(公告)号：US06040230A
公开(公告)日：2000-03-21
申请号：US39075
申请日：1998-03-13
申请人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
发明人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/82
摘要： An embodiment of the instant invention is a method of forming a nano-rugged silicon-containing layer, the method comprising the steps of: providing a first silicon-containing layer (steps 202 or 802); providing a patterning layer over the first silicon-containing layer (steps 204 or 804); the patterning layer comprised of an amorphous substance; providing a second silicon-containing layer (steps 206 or 808) over the patterning layer; and wherein the patterning layer creates a nano-rugged texture in the second silicon-containing layer. Preferably, the first and second silicon-containing layers are comprised of polycrystalline silicon. In an alternative embodiment, the patterning layer is comprised of a material which has small holes such that the step of providing the second silicon-containing layer utilizes the first silicon-containing layer as a seed layer through the small holes so as to form the second silicon-containing layer. In another alternative embodiment, the second silicon-containing layer is comprised of a plurality of islands of the silicon-containing material separated by voids in the material. Preferably, the patterning layer is comprised of SiO.sub.2.
摘要翻译：本发明的一个实施方案是一种形成纳米坚固的含硅层的方法，所述方法包括以下步骤：提供第一含硅层（步骤202或802）; 在第一含硅层上提供图形层（步骤204或804）; 所述图案层由无定形物质构成; 在所述图案化层上提供第二含硅层（步骤206或808）; 并且其中所述图案化层在所述第二含硅层中产生纳米坚固纹理。优选地，第一和第二含硅层由多晶硅组成。在替代实施例中，图案化层由具有小孔的材料构成，使得提供第二含硅层的步骤通过该小孔利用第一含硅层作为种子层，从而形成第二含硅层含硅层。在另一个替代实施例中，第二含硅层由多个岛状的含硅材料构成，该岛由材料中的空隙分开。优选地，图案化层由SiO 2组成。

47. 发明授权

US5512374A PFPE coatings for micro-mechanical devices 失效
标题翻译：用于微机械装置的PFPE涂层
公开(公告)号：US5512374A
公开(公告)日：1996-04-30
申请号：US239497
申请日：1994-05-09
申请人： Robert M. Wallace , Steven A. Henck , Douglas A. Webb
发明人： Robert M. Wallace , Steven A. Henck , Douglas A. Webb
IPC分类号： G02B26/08 , B81B3/00 , B81C1/00 , C08G65/00 , C09D171/00 , C09D171/02 , B32B27/00
CPC分类号： B81C1/0096 , B81B3/0005 , C08G65/007 , C09D171/02 , B81C2201/112 , Y10T428/31544 , Y10T428/31699
摘要： A micro-mechanical device (10) includes relatively movable elements (11, 17) which contact or engage and which thereafter stick or adhere. A perfluoropolyether (PFPE) film (31) is applied to the contacting or engaging portions of the elements (11,17) to ameliorate or eliminate such sticking or adhesion.
摘要翻译：微机械装置（10）包括相对可移动的元件（11,17），其接触或接合，然后粘结或粘附。将全氟聚醚（PFPE）膜（31）施加到元件（11,17）的接触或接合部分以改善或消除这种粘附或粘附。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式