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41. 发明授权

US07422982B2 Method and apparatus for electroprocessing a substrate with edge profile control 失效
标题翻译：用边缘轮廓控制对基底进行电处理的方法和装置
公开(公告)号：US07422982B2
公开(公告)日：2008-09-09
申请号：US11483843
申请日：2006-07-07
申请人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
发明人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B23H5/08 , C25D17/10 , C25D17/12 , C25D21/12
摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.
摘要翻译：提供了一种用于电子处理衬底的方法和装置。在一个实施例中，用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极施加到第一电极的偏压。在一个实施例中，第一电极被涂覆有惰性材料，并且以这种方式获得相同的抛光速率，并且施加到第一电极的较低电位电平。

42. 发明授权

US06739951B2 Method and apparatus for electrochemical-mechanical planarization 失效
标题翻译：电化学机械平面化方法和装置
公开(公告)号：US06739951B2
公开(公告)日：2004-05-25
申请号：US10097496
申请日：2002-03-14
申请人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
发明人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/042
摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.
摘要翻译：一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解导电的，研磨的或非研磨的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。还公开了用于执行EMP的装置。

43. 发明授权

US08758085B2 Method for compensation of variability in chemical mechanical polishing consumables 有权
标题翻译：化学机械抛光耗材的变异性补偿方法
公开(公告)号：US08758085B2
公开(公告)日：2014-06-24
申请号：US13178126
申请日：2011-07-07
申请人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B49/00 , B24B51/00
CPC分类号： B24B53/007 , B24B37/005
摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.
摘要翻译：提供了用于调节CMP系统中抛光垫的装置和方法。在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光使用调整后的抛光配方的一个或多个基材。

44. 发明申请

US20120009847A1 CLOSED-LOOP CONTROL OF CMP SLURRY FLOW 审中-公开
标题翻译： CMP浆液流动的封闭环控制
公开(公告)号：US20120009847A1
公开(公告)日：2012-01-12
申请号：US12831153
申请日：2010-07-06
申请人： Gregory E. Menk , Stan D. Tsai , Sang J. Cho , Sivakumar Dhandapani
发明人： Gregory E. Menk , Stan D. Tsai , Sang J. Cho , Sivakumar Dhandapani
IPC分类号： B24B49/10
CPC分类号： B24B37/26 , B24B37/005 , B24B37/042 , B24B57/02
摘要： Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated.
摘要翻译：本发明的实施方案通常涉及用于化学机械抛光衬底的方法。所述方法通常包括在抛光表面上测量具有凹槽或其它浆料输送特征的抛光垫的厚度。一旦确定了抛光表面上的凹槽的深度，则根据所确定的凹槽深度来调整研磨浆料的流速。在抛光表面上抛光预定数量的基板。然后可以可选地重复该方法。

45. 发明授权

US07699972B2 Method and apparatus for evaluating polishing pad conditioning 失效
标题翻译：评估抛光垫调理的方法和装置
公开(公告)号：US07699972B2
公开(公告)日：2010-04-20
申请号：US11370474
申请日：2006-03-08
申请人： Zhihong Wang , Yongqi Hu , Stan D. Tsai
发明人： Zhihong Wang , Yongqi Hu , Stan D. Tsai
IPC分类号： C25F3/02 , B23H5/06
CPC分类号： B23H5/08 , B24B53/017 , C25F3/02 , C25F7/00
摘要： A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.
摘要翻译：提供了一种评价调理电化学机械抛光垫的方法和装置。使用第一组工艺条件对抛光垫进行调理。在抛光垫上抛光片状晶片和残留晶片。测量来自片状晶片和残留晶片的一种或多种材料的去除速率。计算归一化的去除率。如果归一化的去除速率不在最小值和最大值内，抛光垫被进一步调节。在一个实施例中，归一化去除速率包括残余晶片的去除速率与片晶片的去除速率的比率。

46. 发明授权

US07012025B2 Tantalum removal during chemical mechanical polishing 失效
公开(公告)号：US07012025B2
公开(公告)日：2006-03-14
申请号：US09755717
申请日：2001-01-05
申请人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
发明人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

47. 发明授权

US06537144B1 Method and apparatus for enhanced CMP using metals having reductive properties 失效
公开(公告)号：US06537144B1
公开(公告)日：2003-03-25
申请号：US09505899
申请日：2000-02-17
申请人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
发明人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24D1100
CPC分类号： B24B37/26 , B24B53/017 , H01L21/3212
摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

48. 发明申请

US20120100779A1 APPARATUS AND METHOD FOR COMPENSATION OF VARIABILITY IN CHEMICAL MECHANICAL POLISHING CONSUMABLES 有权
标题翻译：用于补偿化学机械抛光消耗品的可变性的装置和方法
公开(公告)号：US20120100779A1
公开(公告)日：2012-04-26
申请号：US13178126
申请日：2011-07-07
申请人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B49/00
CPC分类号： B24B53/007 , B24B37/005
摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.
摘要翻译：提供了用于调节CMP系统中抛光垫的装置和方法。在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光使用调整后的抛光配方的一个或多个基材。

49. 发明申请

US20100035518A1 CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK 有权
标题翻译：基于计量反馈的扁平轮廓闭环控制
公开(公告)号：US20100035518A1
公开(公告)日：2010-02-11
申请号：US12187675
申请日：2008-08-07
申请人： Shou-Sung Chang , Hung Chih Chen , Stan D. Tsai , Yuchun Wang
发明人： Shou-Sung Chang , Hung Chih Chen , Stan D. Tsai , Yuchun Wang
IPC分类号： B24B49/12 , B24B1/00 , B24B7/00
CPC分类号： B24B37/042 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
摘要翻译：化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。

50. 发明申请

US20080014709A1 Method and apparatus for electroprocessing a substrate with edge profile control 失效
公开(公告)号：US20080014709A1
公开(公告)日：2008-01-17
申请号：US11483843
申请日：2006-07-07
申请人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
发明人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
IPC分类号： H01L21/76
CPC分类号： B23H5/08 , C25D17/10 , C25D17/12 , C25D21/12
摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

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