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41. 发明申请

US20090189702A1 CIRCUIT AND METHOD FOR DETECTING A VOLTAGE CHANGE 有权
标题翻译：用于检测电压变化的电路和方法
公开(公告)号：US20090189702A1
公开(公告)日：2009-07-30
申请号：US12361259
申请日：2009-01-28
申请人： Joerg Berthold , Christian Pacha , Artur Wroblewski
发明人： Joerg Berthold , Christian Pacha , Artur Wroblewski
IPC分类号： H03K3/03
CPC分类号： G01R19/16552
摘要： A circuit arrangement for detecting voltage changes, comprising supply terminals configured to apply a first potential and a second potential, a first oscillator and a second oscillator, which are operated with the first potential and the second potential, a voltage dependence of the frequency of the first oscillator differing from a voltage dependence of the frequency of the second oscillator, a first evaluation circuit configured to evaluate the frequency of the first oscillator and a second evaluation circuit configured to evaluate the frequency of the second oscillator, and a comparison circuit configured to compare a value based on the evaluated frequencies of the first oscillator and of the second oscillator with a predetermined threshold value, and to output a voltage change signal indicating an impermissible voltage change between the first potential and the second potential depending on the result of the comparison.
摘要翻译：一种用于检测电压变化的电路装置，包括被配置为施加第一电位和第二电位的电源端子，第一振荡器和第二振荡器，其以第一电位和第二电位运行，电压依赖性第一振荡器与第二振荡器的频率的电压依赖性不同，第一评估电路，被配置为评估第一振荡器的频率，以及第二评估电路，被配置为评估第二振荡器的频率;以及比较电路，被配置为比较基于第一振荡器和具有预定阈值的第二振荡器的估计频率的值，并且根据比较结果输出指示第一电位和第二电位之间的不允许电压变化的电压变化信号。

42. 发明申请

US20080224178A1 RESISTIVE MEMORY AND METHOD 有权
标题翻译：电阻记忆和方法
公开(公告)号：US20080224178A1
公开(公告)日：2008-09-18
申请号：US11687365
申请日：2007-03-16
申请人： Christian Pacha , Tim Schonauer , Michael Kund
发明人： Christian Pacha , Tim Schonauer , Michael Kund
IPC分类号： H01L27/10 , G11C11/00
CPC分类号： G11C13/0011 , G11C13/0004 , G11C13/0007 , G11C2213/32 , H01L27/2436 , H01L29/785 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/145
摘要： A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.
摘要翻译：存储器件包括具有接触区域的翅片的多栅极场效应晶体管（MuGFET）。可编程存储元件邻接鳍片接触区域。

43. 发明申请

US20080179682A1 CIRCUIT LAYOUT FOR DIFFERENT PERFORMANCE AND METHOD 有权
标题翻译：不同性能和方法的电路布局
公开(公告)号：US20080179682A1
公开(公告)日：2008-07-31
申请号：US11669704
申请日：2007-01-31
申请人： Florian Bauer , Christian Pacha
发明人： Florian Bauer , Christian Pacha
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L27/0207 , H01L27/11 , H01L27/1104 , H01L29/6681 , H01L29/785
摘要： A circuit includes a plurality of first MuGFET devices supported by a substrate and having a first performance level. A plurality of second MuGFET devices is supported by the substrate and have a second performance level. The first and second devices in one embodiment are arranged in separate areas that facilitate different processing of the first and second devices to tailor their performance characteristics. In one embodiment, the circuit is an SRAM having pull down transistors with higher performance.
摘要翻译：电路包括由衬底支撑并且具有第一性能水平的多个第一MuGFET器件。多个第二MuGFET器件由衬底支撑并且具有第二性能水平。一个实施例中的第一和第二装置被布置在便于对第一和第二装置进行不同处理以适应它们的性能特征的分开的区域中。在一个实施例中，电路是具有较高性能的具有下拉晶体管的SRAM。

44. 发明授权

US08487380B2 Transistor with reduced charge carrier mobility 有权
标题翻译：具有降低的载流子迁移率的晶体管
公开(公告)号：US08487380B2
公开(公告)日：2013-07-16
申请号：US13472515
申请日：2012-05-16
申请人： Joerg Berthold , Christian Pacha , Klaus Von Arnim
发明人： Joerg Berthold , Christian Pacha , Klaus Von Arnim
IPC分类号： H01L27/12
CPC分类号： G11C11/412 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1211 , H01L29/04 , H01L29/785
摘要： One or more embodiments relate to an apparatus comprising: a first transistor including a fin; and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor.
摘要翻译：一个或多个实施例涉及一种装置，包括：第一晶体管，包括鳍片; 以及包括鳍的第二晶体管，所述第一晶体管的鳍具有比所述第二晶体管的鳍更低的载流子迁移率。

45. 发明授权

US08415191B2 Integrally fabricated micromachine and logic elements 有权
标题翻译：整体制造的微机械和逻辑元件
公开(公告)号：US08415191B2
公开(公告)日：2013-04-09
申请号：US13218987
申请日：2011-08-26
申请人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
发明人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译：实施例涉及微机械结构。在一个实施例中，微型机械结构包括第一电极，第二电极和感测元件。感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。

46. 发明授权

US08318553B2 Vertical diode using silicon formed by selective epitaxial growth 有权
标题翻译：使用通过选择性外延生长形成的硅的垂直二极管
公开(公告)号：US08318553B2
公开(公告)日：2012-11-27
申请号：US12986875
申请日：2011-01-07
申请人： Christian Russ , Christian Pacha , Snezana Jenei , Klaus Schruefer
发明人： Christian Russ , Christian Pacha , Snezana Jenei , Klaus Schruefer
IPC分类号： H01L21/36 , H01L21/329
CPC分类号： H01L29/861 , H01L29/6609 , H01L29/66356 , H01L29/7391
摘要： Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.
摘要翻译：一些实施例涉及在半导体本体和设置在半导体本体的掺杂区域上的外延膜之间出现垂直二极管活性的装置。一些实施例包括引起垂直和横向二极管活动的装置。一些实施例包括用于翅片半导体装置的门控垂直二极管。工艺实施例包括形成垂直二极管装置。

47. 发明申请

US20120249170A1 Circuit Arrangement with a Plurality of On-Chip Monitor Circuits and a Control Circuit and Corresponding Methods 有权
标题翻译：具有多个片上监控电路和控制电路的电路布置及相应的方法
公开(公告)号：US20120249170A1
公开(公告)日：2012-10-04
申请号：US13076434
申请日：2011-03-31
申请人： Thomas Baumann , Christian Pacha
发明人： Thomas Baumann , Christian Pacha
IPC分类号： G01R31/3187
CPC分类号： G01R31/2843 , G01D18/002 , G01R31/30
摘要： Implementations are presented herein that include a plurality of on-chip monitor circuits and a controller. Each of the plurality of on-chip monitor circuits is configured to measure a parameter of a semiconductor chip. The controller is coupled to the plurality of on-chip monitor circuits. The controller is configured to receive a measurement result from at least one of the plurality of on-chip monitor circuits and to control a calibration of another one of the plurality of on-chip monitor circuits in accordance with the measurement result.
摘要翻译：本文给出了包括多个片上监视器电路和控制器的实现。多个片上监视电路中的每一个被配置为测量半导体芯片的参数。控制器耦合到多个片上监控电路。控制器被配置为从多个片上监控电路中的至少一个接收测量结果，并且根据测量结果来控制多个片上监控电路中的另一个的校准。

48. 发明申请

US20110170337A1 TRANSISTOR WITH REDUCED CHARGE CARRIER MOBILITY AND ASSOCIATED METHODS 有权
标题翻译：具有减少充电载波移动性和相关方法的晶体管
公开(公告)号：US20110170337A1
公开(公告)日：2011-07-14
申请号：US13072805
申请日：2011-03-28
申请人： Jörg Berthold , Christian Pacha , Klaus von Arnim
发明人： Jörg Berthold , Christian Pacha , Klaus von Arnim
IPC分类号： G11C11/34 , H01L27/12 , H01L21/425
CPC分类号： G11C11/412 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1211 , H01L29/04 , H01L29/785
摘要： A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.
摘要翻译：一种器件包括：第一晶体管，包括鳍片和包括鳍片的第二晶体管，第一晶体管的鳍片具有比第二晶体管鳍片更低的载流子迁移率。在一种方法中，第一晶体管的鳍被处理为具有比第二晶体管的鳍更低的载流子迁移率。

49. 发明授权

US07958418B2 Circuit arrangement, electronic mechanism, electrical turn out and procedures for the operation of one circuit arrangement 有权
标题翻译：电路布置，电子机构，电气开关和一个电路布置操作的程序
公开(公告)号：US07958418B2
公开(公告)日：2011-06-07
申请号：US12028657
申请日：2008-02-08
申请人： Christian Pacha , Stephan Henzler , Siegmar Koppe , Joerg Berthold
发明人： Christian Pacha , Stephan Henzler , Siegmar Koppe , Joerg Berthold
IPC分类号： G01R31/28
CPC分类号： G01R31/318552 , G01R31/31858 , G11C29/48 , G11C2029/3202
摘要： A circuit arrangement may include a scan test input stage having a test input for receiving a test signal, wherein the scan test input stage can be switched in high-impedance state; a data input stage having a data input for receiving a data signal, wherein the data input stage can be switched in high-impedance state. The circuit arrangement may further include a latch coupled to at least one output of the scan test input stage and to at least one output of the data input stage; and a drive circuit, which is configured to generate a pulsed clock signal for the data input stage and a signal for driving the scan test input stage.
摘要翻译：电路装置可以包括具有用于接收测试信号的测试输入的扫描测试输入级，其中扫描测试输入级可以以高阻抗状态切换; 数据输入级具有用于接收数据信号的数据输入，其中数据输入级可以以高阻抗状态切换。电路装置还可以包括耦合到扫描测试输入级的至少一个输出端和数据输入级的至少一个输出端的锁存器; 以及驱动电路，其被配置为产生用于数据输入级的脉冲时钟信号和用于驱动扫描测试输入级的信号。

50. 发明授权

US07915681B2 Transistor with reduced charge carrier mobility 有权
标题翻译：具有降低的载流子迁移率的晶体管
公开(公告)号：US07915681B2
公开(公告)日：2011-03-29
申请号：US11764500
申请日：2007-06-18
申请人： Jörg Berthold , Christian Pacha , Klaus von Arnim
发明人： Jörg Berthold , Christian Pacha , Klaus von Arnim
IPC分类号： H01L27/01
CPC分类号： G11C11/412 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1211 , H01L29/04 , H01L29/785
摘要： A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.
摘要翻译：一种器件包括：第一晶体管，包括鳍片和包括鳍片的第二晶体管，第一晶体管的鳍片具有比第二晶体管鳍片更低的载流子迁移率。在一种方法中，第一晶体管的鳍被处理为具有比第二晶体管的鳍更低的载流子迁移率。

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