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41. 发明授权

US06251001B1 Substrate polishing with reduced contamination 有权
标题翻译：底物抛光，污染减少
公开(公告)号：US06251001B1
公开(公告)日：2001-06-26
申请号：US09307674
申请日：1999-05-10
申请人： Jay D. Pinson , Brian J. Brown , Thomas H. Osterheld , Benjamin A. Bonner , Doyle E. Bennett , Nitin Shah , Paul Flores
发明人： Jay D. Pinson , Brian J. Brown , Thomas H. Osterheld , Benjamin A. Bonner , Doyle E. Bennett , Nitin Shah , Paul Flores
IPC分类号： B24B5502
CPC分类号： B24B37/04 , B24B55/02
摘要： Systems and methods for polishing a substrate with reduced contamination are described. Moist air is directed to one or more surfaces in proximity to the polishing surface and exposed to airborne slurry particles generated during polishing. By maintaining the atmosphere in the vicinity of the exposed surfaces at an elevated relative humidity level, airborne slurry particles adhering to the exposed surfaces remain in suspension and, therefore, may be easily cleaned, e.g., during a high pressure rinse cycle. This feature reduces the likelihood that slurry particles will accumulate on exposed surfaces of the polishing apparatus and flake off while a substrate is being polished, reducing the likelihood of substrate defects caused by such slurry contamination.
摘要翻译：描述了用于抛光具有降低的污染物的基底的系统和方法。潮湿空气被引导到靠近抛光表面的一个或多个表面，并暴露于在抛光期间产生的空气中的浆料颗粒。通过在升高的相对湿度水平下保持暴露表面附近的气氛，附着在暴露表面上的气载浆料颗粒保持悬浮状态，因此可以容易地例如在高压冲洗循环中清洁。该特征降低了浆料颗粒在抛光装置的暴露表面上积聚的可能性，并且在抛光衬底时剥落，从而降低了由这种浆料污染引起的衬底缺陷的可能性。

42. 发明授权

US6013091A Stent configurations 失效
公开(公告)号：US6013091A
公开(公告)日：2000-01-11
申请号：US947620
申请日：1997-10-09
申请人： Timothy J. Ley , Graig L. Kveen , Timothy G. J. Ehr , Brian J. Brown , David L. Friesen
发明人： Timothy J. Ley , Graig L. Kveen , Timothy G. J. Ehr , Brian J. Brown , David L. Friesen
IPC分类号： A61F2/06 , A61F2/84 , A61F2/90
CPC分类号： A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91516 , A61F2002/91541 , A61F2002/9155 , A61F2002/91558 , A61F2002/91566
摘要： Improved stent configurations exhibiting limited recoil, resistance to compression and improved longitudinal flexibility.

43. 发明授权

US5856697A Integrated dual layer emitter mask and emitter trench for BiCMOS processes 失效
标题翻译：用于BiCMOS工艺的集成双层发射极掩模和发射极沟槽
公开(公告)号：US5856697A
公开(公告)日：1999-01-05
申请号：US895270
申请日：1997-07-14
申请人： Stephen Chambers , Brian J. Brown , Chan-Hong Chern , Robert Chau , Leopoldo D. Yau
发明人： Stephen Chambers , Brian J. Brown , Chan-Hong Chern , Robert Chau , Leopoldo D. Yau
IPC分类号： H01L21/331 , H01L21/8249 , H01L29/08 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/66272 , H01L21/8249 , H01L29/0804 , Y10S148/01 , Y10S148/011
摘要： A new method of isolating a polysilicon emitter from the base region of a bipolar transistor, trenching the polysilicon emitter into the semiconductor substrate, and maintaining a consistent base width of a bipolar transistor independent of variations in emitter mask thicknesses is disclosed. The polysilicon emitter isolation provides for better electrical breakdown characteristics between the emitter and the base by protecting the dielectric layer between the polysilicon emitter and base regions from defects and contamination associated with the BiCMOS manufacturing environment. The polysilicon emitter is trenched into the semiconductor substrate in order to reduce transistor operation problems associated with hot electron injection. Consistent base widths improve transistor performance uniformity thereby improving manufacturability and reliability.
摘要翻译：公开了一种从双极晶体管的基极区域隔离多晶硅发射极的新方法，将多晶硅发射极沟槽到半导体衬底中，并保持独立于发射极掩模厚度变化的双极晶体管的一致的基底宽度。多晶硅发射极隔离通过保护多晶硅发射极和基极区域之间的电介质层与BiCMOS制造环境相关的缺陷和污染来提供发射极和基极之间的更好的电击穿特性。为了减少与热电子注入相关的晶体管操作问题，多晶硅发射极被沟入半导体衬底。一致的基极宽度提高了晶体管的性能均匀性，从而提高了可制造性和可靠性。

44. 发明授权

US09950404B1 High throughput polishing system for workpieces 有权
公开(公告)号：US09950404B1
公开(公告)日：2018-04-24
申请号：US13434726
申请日：2012-03-29
申请人： Stephen M. Fisher , Robindranath Banerjee , Christopher L. Beaudry , Brian J. Brown
发明人： Stephen M. Fisher , Robindranath Banerjee , Christopher L. Beaudry , Brian J. Brown
IPC分类号： B24B37/04 , B24B7/22
CPC分类号： B24B7/228 , B24B7/224 , B24B27/0023 , B24B27/0069 , B24B27/0076 , B24B37/105 , B24B37/345 , B24B41/005 , H01L21/67173 , H01L21/67219 , H01L21/6776 , H01L31/00
摘要： A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

45. 发明授权

US08728147B2 Longitudinally flexible expandable stent 有权
公开(公告)号：US08728147B2
公开(公告)日：2014-05-20
申请号：US13332025
申请日：2011-12-20
申请人： Brian J. Brown
发明人： Brian J. Brown
IPC分类号： A61F2/06
CPC分类号： A61F2/82 , A61F2/88 , A61F2/89 , A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91516 , A61F2002/91525 , A61F2002/91533 , A61F2002/91558 , A61F2002/91583 , A61F2210/0019 , A61F2220/005 , A61F2220/0058 , A61F2230/0054 , A61F2250/0018
摘要： Segmented articulatable stent of open structure comprised of end-connected struts of first and second lengths making up first and second segments with angular interconnects between adjacent first and second segments.

46. 发明授权

US08348992B2 Longitudinally flexible expandable stent 有权
标题翻译：纵向柔性可扩张支架
公开(公告)号：US08348992B2
公开(公告)日：2013-01-08
申请号：US09934178
申请日：2001-08-21
申请人： Brian J. Brown , Michael L. Davis
发明人： Brian J. Brown , Michael L. Davis
IPC分类号： A61F2/06
CPC分类号： A61F2/915 , A61F2/91 , A61F2002/91525 , A61F2002/91533 , A61F2002/91541 , A61F2002/91558 , A61F2210/0019 , A61F2230/0054 , A61F2250/0018
摘要： A stent is provided with a plurality of annular elements. Each annular element has a compressed state and an expanded state. At least one connecting member connects adjacent annular elements to form a plurality of cells with each cell having an area. The stent has a first segment and a second segment, with the first segment having a plurality of combined adjacent cells that impart greater flexibility to the first segment than the second segment.
摘要翻译：支架设置有多个环形元件。每个环形元件具有压缩状态和膨胀状态。至少一个连接构件连接相邻的环形元件以形成多个单元，每个单元具有一个区域。支架具有第一部分和第二部分，其中第一部分具有多个组合的相邻细胞，其比第二部分赋予第一部分更大的灵活性。

47. 发明申请

US20120265292A1 STENT 有权
公开(公告)号：US20120265292A1
公开(公告)日：2012-10-18
申请号：US13531064
申请日：2012-06-22
申请人： Graig L. Kveen , Timothy G. J. Ehr , Brian J. Brown
发明人： Graig L. Kveen , Timothy G. J. Ehr , Brian J. Brown
IPC分类号： A61F2/82
CPC分类号： A61F2/915 , A61F2/91 , A61F2002/91533 , A61F2002/91541 , A61F2002/91583
摘要： A radially expandable stent comprising a plurality of spaced band-like elements and intersecting links is disclosed. The band-like elements have a generally serpentine configuration to provide continuous waves of generally sinusoidal character to each band-like element. The waves are characterized by a plurality of peaks and troughs taking a generally longitudinal direction along the cylinder such that the waves in the band-like elements open as the stent is expanded from a first diameter to a second diameter. The intersecting links are substantially U-shaped and terminate in first and second shanks. The first shank of a link emanates from a region between a peak and trough on a band-like element and the second shank of the link emanates from a region between a peak and trough on an adjacent band-like element.
摘要翻译：公开了一种包括多个间隔开的带状元件和相交连接件的可径向扩张的支架。带状元件具有大致蛇形结构，以向每个带状元件提供大致正弦曲线的连续波。波的特征在于沿着圆柱体大致纵向方向的多个峰和谷，使得当支架从第一直径扩展到第二直径时，带状元件中的波浪打开。交叉连接件基本上为U形并终止在第一和第二柄部中。链节的第一柄从带状元件上的峰和谷之间的区域发出，并且链节的第二柄从相邻带状元件上的峰和谷之间的区域发出。

48. 发明申请

US20120078345A1 LONGITUDINALLY FLEXIBLE EXPANDABLE STENT 审中-公开
公开(公告)号：US20120078345A1
公开(公告)日：2012-03-29
申请号：US13295744
申请日：2011-11-14
申请人： Brian J. Brown
发明人： Brian J. Brown
IPC分类号： A61F2/82
CPC分类号： A61F2/82 , A61F2/88 , A61F2/89 , A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91516 , A61F2002/91525 , A61F2002/91533 , A61F2002/91558 , A61F2002/91583 , A61F2210/0019 , A61F2220/005 , A61F2220/0058 , A61F2230/0054 , A61F2250/0018
摘要： Segmented articulatable stent of open structure comprised of end-connected struts of first and second lengths making up first and second segments with angular interconnects between adjacent first and second segments.

49. 发明授权

US07879082B2 Micro structure stent configurations 有权
标题翻译：微结构支架配置
公开(公告)号：US07879082B2
公开(公告)日：2011-02-01
申请号：US11019981
申请日：2004-12-21
申请人： Brian J. Brown
发明人： Brian J. Brown
IPC分类号： A61F2/06
CPC分类号： A61F2/91 , A61F2/852 , A61F2/915 , A61F2002/91533 , A61F2002/9155 , A61F2210/0076 , A61F2220/005 , A61F2220/0058 , A61F2230/0013 , A61F2250/0018 , A61F2250/0023 , A61F2250/0029 , A61F2250/0036 , A61F2250/0039 , A61F2250/0063 , A61F2250/0067
摘要： Fine structure stents physiologically acceptable to the body.
摘要翻译：精细结构支架生理上可接受的身体。

50. 发明授权

US07432177B2 Post-ion implant cleaning for silicon on insulator substrate preparation 失效
标题翻译：用于硅绝缘体衬底制备的离子后植入物清洁
公开(公告)号：US07432177B2
公开(公告)日：2008-10-07
申请号：US11154211
申请日：2005-06-15
申请人： James S. Papanu , Han-Wen Chen , Brian J. Brown , Steven Verhaverbeke
发明人： James S. Papanu , Han-Wen Chen , Brian J. Brown , Steven Verhaverbeke
IPC分类号： H01L21/04
CPC分类号： H01L21/02057 , Y10S438/906 , Y10S438/907 , Y10S438/908 , Y10S438/928
摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.
摘要翻译：干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

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