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41. 发明公开

EP1800349A2 HALBLEITERBAUELEMENT 有权
标题翻译： NTC-HALBLEITERWIDERSTAND
公开(公告)号：EP1800349A2
公开(公告)日：2007-06-27
申请号：EP05784623.0
申请日：2005-09-12
申请人： ROBERT BOSCH GMBH
发明人： FLOHRS, Peter , GOERLACH, Alfred , URBACH, Peter , FEILER, Wolfgang , QU, Ning , HEYERS, Klaus
IPC分类号： H01L29/8605 , H01L21/329
CPC分类号： H01L28/20 , G01K7/22 , H01L27/0802 , H01L29/8605 , H01L29/8611
摘要： The invention relates to a semiconductor element and to a method for producing a semiconductor element of this type, whose resistance behaviour is strongly dependent on the temperature. Said resistance behaviour is obtained by a special multi-layer structure of the semiconductor element, a layer being configured in such a way that several p-doped regions are present in an n-doped region, said regions being short-circuited on one face by means of a metallised layer. The semiconductor element can for example be used to reduce current spikes by being integrated into a conductor. When cold, the semiconductor component has a high resistance, which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

42. 发明授权

EP2671253B1 HALBLEITERANORDNUNG MIT REDUZIERTEM EINSCHALTWIDERSTAND 有权转让
公开(公告)号：EP2671253B1
公开(公告)日：2020-02-19
申请号：EP11804970.9
申请日：2011-12-02
申请人： Robert Bosch GmbH
发明人： QU, Ning , GOERLACH, Alfred
IPC分类号： H01L29/06 , H01L29/78 , H01L29/739 , H01L29/861

43. 发明授权

EP2786418B1 HOCHSPANNUNGS-TRENCH-JUNCTION-BARRIER-SCHOTTKYDIODE 有权
标题翻译：高压沟槽结势垒肖特基
公开(公告)号：EP2786418B1
公开(公告)日：2018-04-04
申请号：EP12794663.0
申请日：2012-11-12
申请人： Robert Bosch GmbH
发明人： QU, Ning , GOERLACH, Alfred
IPC分类号： H01L29/861 , H01L29/872
CPC分类号： H01L29/8725 , H01L29/0634 , H01L29/47 , H01L29/861 , H01L29/872

44. 发明公开

EP2740155A1 SUPER-JUNCTION-SCHOTTKY-PIN-DIODE 审中-公开
标题翻译：超结肖特基-PIN二极管
公开(公告)号：EP2740155A1
公开(公告)日：2014-06-11
申请号：EP12737284.5
申请日：2012-07-19
申请人： Robert Bosch GmbH
发明人： QU, Ning , GOERLACH, Alfred
IPC分类号： H01L29/06 , H01L29/872 , H01L21/329
CPC分类号： H01L29/0634 , H01L29/0649 , H01L29/66143 , H01L29/868 , H01L29/872
摘要： The invention relates to a semiconductor chip that comprises an n
+ -doped substrate, above which an n-doped epilayer comprising trenches inserted in the epilayer that are filled with p-doped semiconductor material and that in each case have a highly p-doped area on the upper side thereof, is located in such a way that an alternating arrangement of n-doped areas having a first width and p-doped areas having a second width is present. The chip further comprises a first metal layer that is provided on the front side thereof, which metal layer forms a Schottky contact with the n-doped epilayer and an ohmic contact with the highly p-doped areas and serves as an anode electrode. A second metal layer is provided on the rear side of the semiconductor chip, which layer presents an ohmic contact and serves as a cathode electrode. A dieletric layer is provided in each case between an n-doped area and an adjacent p-doped area.
摘要翻译：半导体芯片具有n +掺杂的衬底，其上引入具有沟槽的n掺杂外延层，沟槽被p掺杂半导体材料填充，并且在每种情况下在其顶侧具有高度p掺杂区域，使得存在具有第一宽度的n掺杂区域和具有第二宽度的p掺杂区域的交替布置。用作阳极的第一金属层设置在芯片的正面，并与n掺杂的外延层形成肖特基接触，并与高p掺杂区形成欧姆接触。表示欧姆接触并用作阴极的第二金属层形成在半导体芯片的后侧。在每个n掺杂区域和相邻的p掺杂区域之间提供介电层。

45. 发明公开

EP2462618A1 FELDEFFEKTTRANSISTOR MIT INTEGRIERTER TJBS-DIODE 审中-公开
标题翻译：具有集成的二极管TJBS场效应晶体管
公开(公告)号：EP2462618A1
公开(公告)日：2012-06-13
申请号：EP10721527.9
申请日：2010-06-10
申请人： Robert Bosch GmbH
发明人： QU, Ning , GOERLACH, Alfred
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/223 , H01L29/04 , H01L29/0619 , H01L29/1095 , H01L29/41766 , H01L29/66734 , H01L29/7806 , H01L29/872 , H01L29/8725
摘要： A semiconductor component comprising at least one MOS field effect transistor and one diode is specified, wherein the diode is a trench junction barrier Schottky diode (TJBS) and the arrangement comprising MOS field effect transistor and trench junction barrier Schottky diode (TJBS) is configured as a monolithically integrated structure. The breakdown voltages of the MOS field effect transistor and of the trench junction barrier Schottky diode (TJBS) are in this case chosen in such a way that the MOS field effect transistor can be operated at breakdown.

46. 发明公开

EP2030242A1 HALBLEITERBAUELEMENT UND GLEICHRICHTERANORDNUNG 审中-公开
标题翻译：半导体部件和整流器布置
公开(公告)号：EP2030242A1
公开(公告)日：2009-03-04
申请号：EP07729378.5
申请日：2007-05-22
申请人： Robert Bosch GmbH
发明人： SPITZ, Richard , GOERLACH, Alfred , WOLF, Gert , QU, Ning , MUELLER, Markus
IPC分类号： H01L29/06 , H01L29/866 , H01L29/16 , H01L29/22 , H01L29/24 , H01L29/737
CPC分类号： H01L29/861 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/22 , H01L29/7371 , H01L29/866 , H01L29/872
摘要： Disclosed are semiconductor devices, so-called hetero-junction diodes (HJD) and rectifier arrangements with semiconductor devices of this kind. Hetero-junction diodes (HJD) are composed of different semiconductor materials, in particular silicon-germanium and silicon, each of which is doped in different ways. By choosing the proportion of germanium and the density of the SiGe-layer, properties such as the breakdown voltage and reverse current of the diode can be adjusted to lie in specific regions. Hetero-junction diodes (HJD) are used in rectifier arrangements, for example for generators in vehicles, where other semiconductor elements can be connected in addition to the hetero-junction diodes (HJD), such as Schottky diodes, Zener diodes, or magnetoresistors. Due to the low forward voltage of hetero-junction diodes (HJD), the efficiency and power output in the idling mode of the generator are improved relative to conventional semiconductor bridges.

47. 发明公开

EP1812971A1 HALBLEITEREINRICHTUNG UND VERFAHREN FÜR DEREN HERSTELLUNG 有权转让
标题翻译：半导体器件及其制造方法SAME
公开(公告)号：EP1812971A1
公开(公告)日：2007-08-01
申请号：EP05801556.1
申请日：2005-10-21
申请人： ROBERT BOSCH GMBH
发明人： GOERLACH, Alfred , QU, Ning
IPC分类号： H01L29/872 , H01L29/861 , H01L21/329 , H01L29/866
CPC分类号： H01L29/66143 , H01L29/0619 , H01L29/8611 , H01L29/872 , H01L29/8725
摘要： The invention relates to a semiconductor device (30) comprising a Schottky diode of the trench-junction-barrier-type with integrated pn diode, and method for producing the same.

48. 发明公开

EP1360510A1 HALBLEITERANORDNUNG ZUR STROMMESSUNG 有权
标题翻译：半导体器件用于电流测量
公开(公告)号：EP1360510A1
公开(公告)日：2003-11-12
申请号：EP02700167.6
申请日：2002-01-25
申请人： ROBERT BOSCH GMBH
发明人： ERNST, Stephan , FEILER, Wolfgang , QU, Ning
IPC分类号： G01R15/20
CPC分类号： G01R15/202
摘要： The invention relates to a semiconductor assembly, a current sensor and a motor vehicle. The semiconductor assembly has sensor elements (300, 400), which detect a magnetic field induced by a conductor (408, 202) that is traversed by current, the detection site (508, 504, 503) completely encircling the electric conductor (408, 202).

49. 发明授权

EP0906510B1 SCHALTUNGSANORDNUNG EINER ZÜNDENDSTUFE, INSBESONDERE FÜR EINE ZÜNDSCHALTUNG EINES KRAFTFAHRZEUGS 失效
标题翻译：电路中的一个点火器，尤其是点火机动车
公开(公告)号：EP0906510B1
公开(公告)日：2002-12-18
申请号：EP97930320.3
申请日：1997-06-16
申请人： ROBERT BOSCH GMBH
发明人： ÜBELE, Manfred , MEINDERS, Horst , QU, Ning
IPC分类号： F02P3/055 , F02P3/04
CPC分类号： F02P3/0442 , F02P3/0552
摘要： A circuit arrangement for an ignition stage, in particular for the ignition circuit of a motor vehicle, has a multiple Darlington transistor (Darlington) which drives a primary winding of an ignition coil, and a driving circuit for the Darlington. An npn-Darlington (T5) is provided whose collector is connected to the positive pole (14) of a voltage source and whose emitter is connected to a first connection of the primary winding (16) of the ignition coil (18), whereas the second connection of the primary winding (16) is earthed. The Darlington (T5) is driven by means of a decoupling stage which decouples the driving circuit from a negative blocking voltage applied to the Darlington base when the Darlington (T5) is switched off.

50. 发明授权

EP1800349B1 NTC-HALBLEITERWIDERSTAND 有权
标题翻译： NTC电阻半导体
公开(公告)号：EP1800349B1
公开(公告)日：2015-07-29
申请号：EP05784623.0
申请日：2005-09-12
申请人： ROBERT BOSCH GMBH
发明人： FLOHRS, Peter , GOERLACH, Alfred , URBACH, Peter , FEILER, Wolfgang , QU, Ning , HEYERS, Klaus
IPC分类号： G01K7/22 , H01L27/08 , H01L49/02 , H01L29/8605 , H01L21/329
CPC分类号： H01L28/20 , G01K7/22 , H01L27/0802 , H01L29/8605 , H01L29/8611

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