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    • 45. 发明公开
    • LASERLICHTQUELLE
    • 激光光源
    • EP2220733A2
    • 2010-08-25
    • EP08863511.5
    • 2008-12-16
    • OSRAM Opto Semiconductors GmbH
    • REILL, WolfgangTAUTZ, SönkeBRICK, PeterSTRAUSS, Uwe
    • H01S5/10H01S5/22H01S5/40
    • H01S5/22H01S5/1017H01S5/1064H01S5/4031
    • A laser light source especially comprises a semiconductor layer sequence (10) having an active layer with at least two active zones (45) that are adapted to emit, when operating, electromagnetic radiation via a lateral face of the semiconductor layer sequence (10) along a direction of emission (90), said lateral face being designed as a radiation output surface (12). The laser light source further comprises an electrical contact surface (30) above every of the at least two active zones (45) on a main surface (14) of the semiconductor layer sequence (10) and a surface structure in the main surface (14) of the semiconductor layer sequence (10). The at least two active zones (45) are arranged in the active layer (40) at a right angle to the direction of emission (90) and interspaced from each other. Every electrical contact surface (30) has a first section (31) and a second section (32) which grows wider along the direction of emission (90) towards the radiation output surface (12). The surface structure between the at least two electrical contact surfaces (30) has at least one first recess (6) along the direction of emission (90) and second recesses (7), every first section (31) of the electrical contact surfaces (30) being arranged between at least two second recesses (7).
    • 46. 发明公开
    • HALBLEITERLICHTQUELLE MIT EINER PRIMÄRSTRAHLUNGSQUELLE UND EINEM LUMINESZENZKONVERSIONSELEMENT
    • HALBLEITERLICHTQUELLE MIT EINERPRIMÄRSTRAHLUNGSQUELLEUND EINEM LUMINESZENZKONVERSIONSELEMENT
    • EP2198465A1
    • 2010-06-23
    • EP08801322.2
    • 2008-09-11
    • OSRAM Opto Semiconductors GmbH
    • OTT, HubertLELL, AlfredTAUTZ, SönkeSTRAUSS, UweBAUMANN, FrankPETERSEN, Kirstin
    • H01L33/00F21K7/00
    • F21K9/64F21V9/30F21Y2115/10H01L33/507H01L33/58H01L33/60
    • The invention relates to a semiconductor light source having a primary radiation source (1) that, in operation, emits electromagnetic primary radiation (5) in a first wavelength range and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is coupled. The luminescence conversion module (2) comprises a luminescence conversion element (6) that absorbs primary radiation (5) from the first wavelength range by means of a luminescent material and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is disposed at a distance from the primary radiation source (1) on a cooling body (3). Said luminescence conversion element (6) comprises a reflector surface (7, 71, 72) that reflects back primary radiation (5) traveling into the luminescence conversion element (6) but not absorbed thereby and/or reflects secondary radiation (15) in the direction of a light decoupling surface (601) of the luminescence conversion element (6).
    • 提供一种半导体光源,所述半导体光源具有主辐射源(1),当所述半导体光源被操作时,所述主辐射源(1)在第一波长范围内发射电磁初级辐射(5),并且具有发光转换模块 ),其中馈送由主辐射源(1)发射的初级辐射(5)。 发光转换模块(2)包含发光转换元件(6),其通过发光材料从第一波长范围吸收主辐射(5)并在第二波长范围内发射电磁次级辐射(15)。 发光转换元件(6)布置在距离主辐射源(1)一定距离处的散热器(3)上。 它具有反射回到发光转换元件(6)的主要辐射(5)的反射器表面(7,71,72),其通过发光转换元件(6)并且不被其吸收和/或反射次级辐射 15)在发光转换元件(6)的光耦合表面(601)的方向上。
    • 47. 发明公开
    • HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERCHIPS
    • EP2052419A2
    • 2009-04-29
    • EP07817511.4
    • 2007-09-10
    • OSRAM Opto Semiconductors GmbH
    • STRAUSS, Uwe
    • H01L33/00
    • H01L33/22H01L33/0079
    • A semiconductor chip (1) is specified comprising a carrier (3) and comprising a semiconductor body (2), which comprises a semiconductor layer sequence having an active region (21) provided for generating radiation, wherein: the carrier has a first carrier area (31) facing the semiconductor body (2) and a second carrier area (32) remote from the semiconductor body (2), the semiconductor body (2) is cohesively fixed to the carrier (3) by means of a connecting layer (4), and plurality of reflective or scattering elements (40, 7) are formed between the second carrier area (32) and the active region (21). A method for producing a semiconductor chip is furthermore specified.
    • 一种半导体芯片(1)被指定为包括载体(3)并且包括半导体主体(2),半导体主体(2)包括具有用于产生辐射的有源区(21)的半导体层序列,其中:载体具有第一载体区 (2)的第一载体区域(31)和远离半导体本体(2)的第二载体区域(32),半导体本体(2)借助于连接层(4)粘附地固定到载体 ),并且在第二载体区域(32)和有源区域(21)之间形成多个反射或散射元件(40,7)。 此外规定了用于制造半导体芯片的方法。