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    • 44. 发明授权
    • Silylation treatment unit and method
    • 甲硅烷基化处理装置及方法
    • US06872670B2
    • 2005-03-29
    • US10752556
    • 2004-01-08
    • Takayuki ToshimaTsutae OmoriMasami Yamashita
    • Takayuki ToshimaTsutae OmoriMasami Yamashita
    • H01L21/205G03F7/20G03F7/26H01L21/00H01L21/31
    • H01L21/67109G03F7/265G03F7/70991
    • A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.
    • 甲硅烷基化处理单元包括室,设置在该室中用于加热基板的加热机构,用于将包含甲硅烷基化试剂的蒸气供应到室中的供给机构。 该单元还具有用于将基板保持在室中的基板保持器,其中加热机构和基板之间的间隔可调节至少三级或更多级。 接收基板,使得其通过使来自加热机构的间隔最大化而受到室内热量的影响最小。 使间隔相对更靠近加热机构,等待室内温度获得高的平面均匀性。 在获得高平面均匀性之后,间隔进一步靠近加热机构,使得发生甲硅烷基化反应。
    • 49. 发明授权
    • Method of controlling substrate processing apparatus and substrate processing apparatus
    • 控制基板处理装置和基板处理装置的方法
    • US07529595B2
    • 2009-05-05
    • US10581073
    • 2004-11-30
    • Shinichi ShinozukaShigeki WadaMasami Yamashita
    • Shinichi ShinozukaShigeki WadaMasami Yamashita
    • G06F19/00
    • H01L21/67745G03F7/162G03F7/3021H01L21/67276
    • It is an object of the present invention to realize, in a coating and developing apparatus including an inspection section, reduction in the startup time, cost reduction, and an improved operating rate of the inspection section.In the present invention, a control program of the coating and developing apparatus is set such that a processing flow and an inspection flow can be independently executed, the processing flow being a flow in which a substrate is carried to a processing station from a cassette station to be processed in the processing station and an aligner and thereafter is returned to the cassette station, and the inspection flow being a flow in which the substrate is carried from the cassette station to an inspection station to be inspected there, and is thereafter returned to the cassette station. At startup of the coating and developing apparatus, the inspection flow and the processing flow are executed, and an evaluation work of an inspection unit of the inspection station and an adjustment work of a processing unit in the processing station can proceed simultaneously. When the inspection station is idle, a substrate can be carried from an external part to the cassette station to be inspected there.
    • 本发明的目的是在包括检查部分的涂覆和显影装置中实现起动时间的减少,成本降低和检查部分的提高的操作速度。 在本发明中,涂布显影装置的控制程序被设定为能够独立地执行处理流程和检查流程,处理流程是将基板从盒式磁带机搬送到加工站的流程 在处理站和对准器中处理,然后返回到盒式站,并且检查流程是将基板从盒式站被运送到在那里进行检查的检查站的流程,然后返回到 盒式电台。 在涂装和显影装置启动时,执行检查流程和处理流程,并且检查站的检查单元和处理站中的处理单元的调整工作的评估工作可以同时进行。 当检查站空闲时,可以将基板从外部部件运送到要在那里进行检查的卡带站。
    • 50. 发明授权
    • Line width measuring method, substrate processing method, substrate processing apparatus and substrate cooling processing unit
    • 线宽测量方法,基板处理方法,基板处理装置和基板冷却处理单元
    • US07375831B2
    • 2008-05-20
    • US11013784
    • 2004-12-17
    • Michio TanakaMasami Yamashita
    • Michio TanakaMasami Yamashita
    • G01B11/02
    • G03F7/705G03F7/70625
    • In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.
    • 在使用散射测量技术进行的光线宽度测量中,本发明比现有技术更准确地测量在衬底上形成的线宽。 在基板上的抗蚀剂膜中形成预定图案之后,测量抗蚀剂膜的折射率和消光系数。 基于测量值,执行计算以获得从多个虚拟图案反射的反射光的计算的光强度分布。 存储计算的光强度分布,并创建它们的库。 用光照射测定折射率等的基板,测定其反射光的光强度分布。 将光强度分布与库中计算的光强度分布进行比较,使得具有匹配的光强度分布的虚拟图案的线宽被视为实曲线的线宽。 由于在形成图案之后,基于实际测量的折射率等创建虚拟图案的光强度分布的库,因此测量与测量线宽度时的图案状态匹配的精确线宽。