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41. 发明授权

US06514673B2 Rule to determine CMP polish time 有权
公开(公告)号：US06514673B2
公开(公告)日：2003-02-04
申请号：US09818962
申请日：2001-03-28
申请人： Hway-Chi Lin , Yu-Ku Lin , Wen-Pin Chang , Ying-Lang Wang
发明人： Hway-Chi Lin , Yu-Ku Lin , Wen-Pin Chang , Ying-Lang Wang
IPC分类号： G03F700
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , H01L21/31053 , H01L21/76224
摘要： A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This method derives from our observation of a linear relationship between the amount of material that needs to be removed in order to achieve full planarization and a quantity called “OD for CMP density”. The latter is defined as PA×(100−PS) where PA is the percentage of active area relative to the total wafer area and PS is the percentage of sub-areas relative to the total wafer area. The sub-areas are regions in the dielectric, above the active areas, that are etched out prior to CMP. Thus, once the materials have been characterized, the optimum CMP removal thickness is readily calculated for a wide range of different circuit implementations.

42. 发明授权

US06352924B1 Rework method for wafers that trigger WCVD backside alarm 有权
标题翻译：触发WCVD背面报警的晶圆返工方法
公开(公告)号：US06352924B1
公开(公告)日：2002-03-05
申请号：US09587463
申请日：2000-06-05
申请人： Jun Wu , Ming Jer Lee , Yu Ku Lin , Ying-Lang Wang
发明人： Jun Wu , Ming Jer Lee , Yu Ku Lin , Ying-Lang Wang
IPC分类号： H01L2144
CPC分类号： H01L21/76865 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A new method is provided to replace tungsten plugs for wafers that trigger the WCVD backside alarm. In this new rework process, the original TiN glue layer is sputter etched back and a new (“fresh”) 100-Angstrom thick layer of TiN is deposited. The new tungsten plug is created over the top surface of the refreshed glue layer.
摘要翻译：提供了一种新方法来替代触发WCVD背面报警的晶片的钨丝塞。在这种新的返工过程中，将原始TiN胶层溅射回蚀刻，并沉积出新的（“新鲜”）100埃厚的TiN层。新的钨丝塞在刷新的胶层的上表面上形成。

43. 发明授权

US06291331B1 Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue 有权
标题翻译：重新沉积高压应力PECVD氧化膜经IMD CMP工艺解决超过5个金属堆叠通过工艺IMD裂纹问题
公开(公告)号：US06291331B1
公开(公告)日：2001-09-18
申请号：US09412654
申请日：1999-10-04
申请人： Ying-Lang Wang , Jowei Dun , Ming-Jer Lee , Tong-Hua Kuan
发明人： Ying-Lang Wang , Jowei Dun , Ming-Jer Lee , Tong-Hua Kuan
IPC分类号： H01L2144
CPC分类号： H01L21/76801 , H01L2224/02166 , H01L2224/05093
摘要： A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.
摘要翻译：提供了一种新的方法，用于创建用于金属堆叠互连层的电介质层，其中金属叠层超过五层。五层金属互连线的堆叠包含一层金属介电介质（ILD）和四层金属间介质（IMD）。 IMD的一个或多个层可以用常规方法形成。可以以常规方法形成IMD的一个或多个层，之后在该一个或多个IMD层上沉积高压缩PECVD层。高压缩PECVD层提供了抗裂膜，消除了在IMD表面形成裂缝。

44. 发明授权

US6099662A Process for cleaning a semiconductor substrate after chemical-mechanical polishing 有权
标题翻译：化学机械抛光后清洗半导体衬底的工艺
公开(公告)号：US6099662A
公开(公告)日：2000-08-08
申请号：US248726
申请日：1999-02-11
申请人： Ying-Lang Wang , Jowei Dun , Ken-Shen Chou , Yu-Ku Lin
发明人： Ying-Lang Wang , Jowei Dun , Ken-Shen Chou , Yu-Ku Lin
IPC分类号： H01L21/02 , H01L21/306 , H01L21/3105 , H01L21/321 , B08B3/00 , H01L21/00
CPC分类号： H01L21/02065 , H01L21/02074 , H01L21/31053 , H01L21/3212
摘要： An improved method for removing residual slurry particles and metallic residues from the surface of a semiconductor substrate after chemical-mechanical polishing has been developed. The cleaning method involves sequential spray cleaning solutions of NH.sub.4 OH and H.sub.2 O, NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, HF and H.sub.2 O, and HCl, H.sub.2 O.sub.2 and H.sub.2 O. The cleaning sequence is: 1. A pre-soak in a spray solution of NH.sub.4 OH and H.sub.2 O; 2. Spray cleaning in a solution of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O; 3. Spray cleaning in a dilute solution of HF and H.sub.2 O; 4. Spray rinsing in DI-water. It is important that slurry particulates first be removed by NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, followed by spray cleaning in a dilute solution of HF and H.sub.2 O to remove metallic residues. The spray cleaning method is superior to brush cleaning methods for both oxide-CMP and tungsten-CMP and results in superior removal of slurry particles and metallic residues introduced by the CMP processes. An optional spray cleaning step using a solution of HCl, H.sub.2 O.sub.2 and H.sub.2 O results in further reduction of metallic residue contamination following oxide-CMP. Compared to traditional brush cleaning the new spray cleaning process has a 2.times. improvement in throughput, less consumption of DI water, and low risk of cross-contamination between sequentially cleaned substrates.
摘要翻译：已经开发了用于在化学机械抛光之后从半导体衬底的表面除去残余浆料颗粒和金属残留物的改进方法。清洗方法包括NH 4 OH和H 2 O，NH 4 OH，H 2 O 2和H 2 O，HF和H 2 O以及HCl，H 2 O 2和H 2 O的顺序喷雾清洗溶液。清洗顺序为：1.在NH4OH和H2O的喷雾溶液中预浸泡; 2.在NH4OH，H2O2和H2O溶液中喷雾清洗; 3.在HF和H2O的稀溶液中喷雾清洗; 4.在DI水中喷淋。重要的是，首先通过NH 4 OH，H 2 O 2和H 2 O除去浆料颗粒，然后在HF和H 2 O的稀溶液中喷雾清洗以除去金属残余物。喷雾清洗方法优于氧化物CMP和钨-CMP两者的刷子清洗方法，并且优异地除去由CMP工艺引入的浆料颗粒和金属残留物。使用HCl，H2O2和H2O溶液的可选喷雾清洗步骤可以进一步降低氧化物CMP后的金属残留污染。与传统的刷子清洁相比，新的喷雾清洁过程在吞吐量方面有2倍的改善，更少的去离子水消耗，以及顺序清洗的基材之间交叉污染的风险较低。

45. 发明授权

US09254548B2 Method of forming diamond conditioners for CMP process 有权
标题翻译：形成CMP工艺用金刚石调理剂的方法
公开(公告)号：US09254548B2
公开(公告)日：2016-02-09
申请号：US13455448
申请日：2012-04-25
申请人： Yen-Chang Chao , Kei-Wei Chen , Ying-Lang Wang
发明人： Yen-Chang Chao , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： B24B53/017 , B24D3/06 , B24D3/28 , B24D18/00
CPC分类号： B24B53/12 , B24B53/017 , B24D3/06 , B24D3/28 , B24D18/00
摘要： A method for making a conditioner disk used in a chemical mechanical polishing (CMP) process comprises applying a first layer of at least one binder over a substrate; disposing a plurality of diamond particles on the first layer of the at least one first binder at the plurality of locations; and fixing the plurality of diamond particles to the substrate by heating the substrate to a raised temperature and then cooling the substrate. The plurality of diamond particles disposed over the substrate are configured to provide a working diamond ratio higher than 50% when the conditioner disk is used in a CMP process.
摘要翻译：用于制造在化学机械抛光（CMP）工艺中使用的调节盘的方法包括在衬底上施加至少一种粘合剂的第一层; 在所述多个位置处在所述至少一个第一粘合剂的所述第一层上设置多个金刚石颗粒; 以及通过将衬底加热到升高的温度然后冷却衬底，将多个金刚石颗粒固定到衬底上。设置在基板上的多个金刚石颗粒被配置为当在CMP工艺中使用调节盘时，提供高于50％的工作金刚石比例。

46. 发明授权

US09120194B2 Apparatus for wafer grinding 有权
标题翻译：晶圆研磨设备
公开(公告)号：US09120194B2
公开(公告)日：2015-09-01
申请号：US13188028
申请日：2011-07-21
申请人： Kuo-Hsiu Wei , Kei-Wei Chen , Ying-Lang Wang , Chun-Ting Kuo
发明人： Kuo-Hsiu Wei , Kei-Wei Chen , Ying-Lang Wang , Chun-Ting Kuo
IPC分类号： B24B7/22 , B24D7/14
CPC分类号： B24B7/228 , B24D7/14
摘要： A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.
摘要翻译：砂轮包括具有第一附接谷物垫的外基部; 以及具有第二附着谷物垫的内框架; 以及由所述外基座和所述内框架共享的主轴，其中所述外基座和所述内框架中的至少一个可以沿着所述共享主轴轴线独立地移动; 并且其中所述外基座，所述内框架和所述共享主轴轴线都具有相同的中心。研磨系统包括上述砂轮和附接到共享主轴轴线的能够垂直移动的砂轮头，除了驱动砂轮旋转的马达之外，以及用于将晶片固定在卡盘台顶部的卡盘台; 其中所述砂轮与所述卡盘台的一部分重叠，所述卡盘台的每一个能够沿相反方向旋转。

47. 发明授权

US09064770B2 Methods for minimizing edge peeling in the manufacturing of BSI chips 有权
标题翻译： BSI芯片制造中边缘剥离最小化的方法
公开(公告)号：US09064770B2
公开(公告)日：2015-06-23
申请号：US13551457
申请日：2012-07-17
申请人： Chun-Ting Kuo , Kei-Wei Chen , Ying-Lang Wang , Kuo-Hsiu Wei
发明人： Chun-Ting Kuo , Kei-Wei Chen , Ying-Lang Wang , Kuo-Hsiu Wei
IPC分类号： H01L21/02 , H01L27/146
CPC分类号： H01L27/1464 , H01L21/02087 , H01L21/0209 , H01L27/14687
摘要： A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.
摘要翻译：一种方法包括在半导体衬底上形成顶部金属线，其中半导体衬底是具有斜面的晶片的一部分。当顶部金属线暴露时，在斜面上提供蚀刻剂，其中用蚀刻剂喷射的晶片的区域具有形成具有第一直径的第一环的内部限定线。进行修整步骤以修剪晶片的边缘部分，其中晶片的剩余部分的边缘具有基本上等于或小于第一直径的第二直径。

48. 发明授权

US08552529B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08552529B2
公开(公告)日：2013-10-08
申请号：US13488958
申请日：2012-06-05
申请人： Jung-Chih Tsao , Yu-Sheng Wang , Kei-Wei Chen , Ying-Lang Wang
发明人： Jung-Chih Tsao , Yu-Sheng Wang , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L21/02
CPC分类号： H01L27/0805 , H01L28/60 , H01L28/75
摘要： A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.
摘要翻译：公开了一种半导体器件。该装置包括基板; 覆盖衬底的第一金属层; 覆盖在第一金属层上的电介质层; 以及覆盖所述电介质层的第二金属层，其中所述第一金属层包括：第一体心立方晶格金属层; 第一底层，位于第一体心立方晶格金属层下面，其中第一底层是体心立方晶格的金属，包括钛（Ti），钨（W），钼（Mo）或铌（Nb）; 以及在第一体心立方晶格金属层和第一底层之间的体心立方晶格的第一界面。

49. 发明授权

US08551193B2 Nickel alloy target including a secondary metal 有权
标题翻译：镍合金靶包括二次金属
公开(公告)号：US08551193B2
公开(公告)日：2013-10-08
申请号：US13188182
申请日：2011-07-21
申请人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen
发明人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen
IPC分类号： C22C19/03 , H01L21/283
CPC分类号： H01L29/45 , C23C14/14 , C23C14/3414 , H01L21/28052 , H01L21/28518 , H01L21/2855 , H01L21/823418 , H01L29/456 , H01L29/665 , Y10T29/41
摘要： A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.
摘要翻译：目标包括镍和二次金属。次级金属的体积百分比在约1％至约10％之间。二次金属具有约5,000kg / m 3至约15,000kg / m 3的密度。

50. 发明申请

US20130134541A1 Metal Shielding Layer in Backside Illumination Image Sensor Chips and Methods for Forming the Same 有权
标题翻译：金属屏蔽层背面照明图像传感器芯片及其形成方法
公开(公告)号：US20130134541A1
公开(公告)日：2013-05-30
申请号：US13420279
申请日：2012-03-14
申请人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H01L27/14685
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。光敏器件设置在半导体衬底的表面处，其中光敏器件被配置为从半导体衬底的背面接收光信号，并将光信号转换为电信号。在半导体衬底的背面设有非晶态粘接层。非晶态粘合层包括氮和金属的化合物。金属屏蔽层设置在半导体衬底的背面并与非晶态粘合层接触。

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