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41. 发明授权

US06268235B1 Method for manufacturing a photoelectric conversion device 失效
标题翻译：光电转换装置的制造方法
公开(公告)号：US06268235B1
公开(公告)日：2001-07-31
申请号：US09235126
申请日：1999-01-21
申请人： Masayuki Sakakura , Yasuyuki Arai , Shunpei Yamazaki
发明人： Masayuki Sakakura , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L2100
CPC分类号： H01L31/1824 , H01L31/03921 , H01L31/03926 , H01L31/046 , H01L31/1804 , Y02E10/545 , Y02E10/547 , Y02P70/521
摘要： In a method of manufacturing a photoelectric conversion device, a step of forming a microcrystalline semiconductor film and a step of implanting an impurity element into the microcrystalline semiconductor film are separated from each other so that the productivity of the photoelectric conversion device by a roll-to-roll system manufacturing apparatus is increased. In the method, first, a first electrode is formed on an organic resin substrate. Then a first microcrystalline semiconductor film, a substantially intrinsic amorphous semiconductor film, and a second microcrystalline semiconductor film are continuously formed by a roll-to-roll system plasma CVD method. The first and second microcrystalline semiconductor films are formed without adding n-type or p-type conductivity determining impurity elements. After the formation of the films, a p-type conductivity determining impurity element is implanted into the second microcrystalline semiconductor film. By carrying out a heat treatment, the p-type conductivity determining impurity element is activated so that a p-type microcrystalline semiconductor film is obtained, and at the same time, an n-type microcrystalline semiconductor film having lowered resistance can be obtained.
摘要翻译：在制造光电转换装置的方法中，形成微晶半导体膜的步骤和将杂质元素注入到微晶半导体膜中的步骤彼此分离，使得光电转换装置的生产率通过辊到 - 系统制造装置增加。在该方法中，首先，在有机树脂基板上形成第一电极。然后通过卷对卷系统等离子体CVD法连续地形成第一微晶半导体膜，基本上为本征的非晶半导体膜和第二微晶半导体膜。在不添加n型或p型导电性决定杂质元素的情况下，形成第一和第二微晶半导体膜。在形成膜之后，将p型导电性确定杂质元素注入到第二微晶半导体膜中。通过进行热处理，p型导电性决定杂质元素被激活，从而获得p型微晶半导体膜，同时可以获得具有低电阻的n型微晶半导体膜。

42. 发明授权

US08829527B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08829527B2
公开(公告)日：2014-09-09
申请号：US13615805
申请日：2012-09-14
申请人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
发明人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L51/52 , H01L27/12 , H01L27/32 , H01L51/00 , H01L51/56
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译：本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。布线等形成为与绝缘层接触，从而增强布线等的覆盖。此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

43. 发明授权

US08823009B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08823009B2
公开(公告)日：2014-09-02
申请号：US13486017
申请日：2012-06-01
申请人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
发明人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

44. 发明授权

US08779418B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08779418B2
公开(公告)日：2014-07-15
申请号：US12900136
申请日：2010-10-07
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译：目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极。金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

45. 发明授权

US08502225B2 Light-emitting device and method for manufacturing the same 有权
公开(公告)号：US08502225B2
公开(公告)日：2013-08-06
申请号：US12871176
申请日：2010-08-30
申请人： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
IPC分类号： H01L29/10 , H01L31/00
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/52 , H01L2227/323
摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

46. 发明授权

US08431926B2 Semiconductor device having oxide semiconductor layer 有权
公开(公告)号：US08431926B2
公开(公告)日：2013-04-30
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/12 , H01L29/786
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

47. 发明授权

US08309961B2 Semiconductor device, display device, and electronic appliance 有权
标题翻译：半导体装置，显示装置和电子设备
公开(公告)号：US08309961B2
公开(公告)日：2012-11-13
申请号：US12897419
申请日：2010-10-04
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/45 , H01L29/78606 , H01L29/78696
摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
摘要翻译：在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻可以减少漏电极。

48. 发明授权

US08253179B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08253179B2
公开(公告)日：2012-08-28
申请号：US11410034
申请日：2006-04-25
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L31/062
CPC分类号： H01L27/1244 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , G09G3/2007 , G09G3/36 , G09G2300/0426 , G09G2310/0235 , H01L27/0255 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/1274 , H01L27/3223 , H01L27/3262 , H01L27/3276 , H01L29/78663 , H01L29/78675 , H01L2227/323 , H01L2924/13069
摘要： An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.
摘要翻译：设置在相邻像素之间的绝缘膜被称为堤，隔板，阻挡层，路堤等，并且设置在用于薄膜晶体管或电源线的源极布线或漏极布线的上方。特别地，在这些布线的交叉部分设置在不同的层中，在其中形成比其他部分更大的台阶。即使在通过涂布法形成相邻像素之间的绝缘膜的情况下，存在由于该步骤而部分地形成薄壁部分并且耐受压力降低的问题。在本发明中，在大台阶部分附近设置虚拟材料，特别是布置在配线的交叉部分周围，以减轻形成在其上的不均匀。上部绞线和下部布线以不对准的方式布置，以便不使端部对齐。

49. 发明授权

US08174029B2 Light emitting apparatus and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08174029B2
公开(公告)日：2012-05-08
申请号：US13082104
申请日：2011-04-07
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

50. 发明授权

US08148895B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US08148895B2
公开(公告)日：2012-04-03
申请号：US11227147
申请日：2005-09-16
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L51/54
CPC分类号： H01L29/78636 , G09G3/3225 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , H01L27/1218 , H01L27/1248 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78654 , H01L33/0041 , H01L51/5246 , H01L51/56
摘要： It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. It is another object of the invention to provide a display device and a method for manufacturing a display device satisfying the above two simultaneously. A display device of the present invention to solve the above problems comprising a thin film transistor and a light-emitting element over an insulating surface formed on a substrate, wherein the light-emitting element includes a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film.
摘要翻译：本发明的目的是提供一种制造显示装置的方法，其中在发光元件下产生的不均匀性不会对发光元件产生不利影响。本发明的另一个目的是提供一种制造显示装置的方法，其中可以在不大幅度增加处理步骤的情况下，通过具有高透湿性的膜将水渗透到显示装置的内部。本发明的另一个目的是提供一种同时满足上述两种显示装置和显示装置的制造方法。本发明的显示装置解决了在基板上形成的绝缘面上的薄膜晶体管和发光元件的上述问题，其特征在于，所述发光元件包括夹在第一电极和第二电极; 其中所述第一电极形成在形成在所述薄膜晶体管上的绝缘膜上; 并且其中响应于所述第一电极和所述绝缘膜之间的所述第一电极形成平坦化膜。

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