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    • 7. 发明授权
    • Light emitting apparatus and method for manufacturing the same
    • 发光装置及其制造方法
    • US07709846B2
    • 2010-05-04
    • US12244984
    • 2008-10-03
    • Shunpei YamazakiSatoshi MurakamiMasayuki SakakuraToru Takayama
    • Shunpei YamazakiSatoshi MurakamiMasayuki SakakuraToru Takayama
    • H01L29/267
    • H01L27/3244H01L27/12H01L27/1248H01L27/3246H01L27/3258H01L29/16H01L29/66757H01L29/78621H01L29/78645H01L29/78675H01L29/78696H01L51/5008H01L51/524H01L51/5253H01L51/56H01L2227/323H01L2251/566
    • The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
    • 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括: 栅电极上的第二无机绝缘层,第二无机绝缘层上的第一有机绝缘层,第一有机绝缘层上的第三无机绝缘层,形成在第三无机绝缘层上的阳极层,第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层,有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层,以及与含有发光材料的有机化合物层接触形成的阴极层,其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。
    • 10. 发明授权
    • Light emitting apparatus and method for manufacturing the same
    • 发光装置及其制造方法
    • US06903377B2
    • 2005-06-07
    • US10290478
    • 2002-11-08
    • Shunpei YamazakiSatoshi MurakamiMasayuki SakakuraToru Takayama
    • Shunpei YamazakiSatoshi MurakamiMasayuki SakakuraToru Takayama
    • H01L27/32H01L51/52H01L33/00
    • H01L27/3244H01L27/124H01L27/1248H01L27/3246H01L29/78621H01L29/78627H01L51/5234H01L51/5253H01L2251/5315H01L2251/566
    • The purpose of the invention is to improve reliability of a light emitting apparatus including a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element includes a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and including light emitting material, and an anode layer formed in contact with the organic compound layer including the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
    • 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括在半导体层的下表面上的第一无机绝缘层,在栅电极的上表面上的第二无机绝缘层,第一有机 所述第二无机绝缘层上的绝缘层,所述第一有机绝缘层上的第三无机绝缘层,在所述第三无机绝缘层上延伸的布线层,与所述布线层的端部重叠的第二有机绝缘层, 35〜45度的第四无机绝缘层,形成在所述第二有机绝缘层的上表面和侧面的第四无机绝缘层,并且在所述布线层上具有开口;阴极层,与所述布线层接触形成, 第四无机绝缘层和与阴极层接触形成的有机化合物层 包括发光材料的第四无机绝缘层和与包括发光材料的有机化合物层接触形成的阳极层,其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。