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41. 发明授权

US08768684B2 Apparatus, method and program for processing information 有权
标题翻译：用于处理信息的装置，方法和程序
公开(公告)号：US08768684B2
公开(公告)日：2014-07-01
申请号：US12800178
申请日：2010-05-10
申请人： Atsushi Mitsuzawa , Yuji Matsuyama , Toshihiko Kawai
发明人： Atsushi Mitsuzawa , Yuji Matsuyama , Toshihiko Kawai
IPC分类号： G06F9/455
CPC分类号： G06F9/45558 , G06F9/4856 , G06F2009/4557 , Y02D10/24 , Y02D10/32
摘要： Apparatus and method for processing information may determine whether a migration condition exists by a source information processing unit executing a program. When a migration condition is determined to exist by the source information processing unit, a destination information processing unit may determine whether an instruction to be executed of the program is a predetermined instruction. The instruction to be executed is converted by an instruction emulator, when a result of a determination by the destination information processing unit is the predetermined instruction.
摘要翻译：用于处理信息的装置和方法可以确定执行程序的源信息处理单元是否存在迁移条件。当源信息处理单元确定迁移条件存在时，目的地信息处理单元可以确定要执行的程序的指令是否是预定指令。当目的地信息处理单元的确定结果为预定指令时，由指令仿真器转换要执行的指令。

42. 发明授权

US07813397B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07813397B2
公开(公告)日：2010-10-12
申请号：US12100247
申请日：2008-04-09
申请人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
发明人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
IPC分类号： H01S5/00 , H01L27/15
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.
摘要翻译：氮化物半导体激光装置在氮化物半导体衬底的（0001）的第一原理面上包括具有第一导电类型，有源层和具有不同的第二导电类型的氮化物半导体层的氮化物半导体层从第一导电类型，并且在其表面上形成条纹脊。（000-1）面和除（000-1）面以外的倾斜面露出在氮化物半导体衬底的第二主面上。除了（000-1）面以外的倾斜面在第二主面的表面积以上不小于0.5％。

43. 发明申请

US20100053568A1 PROJECTION DISPLAY DEVICE 有权
标题翻译：投影显示设备
公开(公告)号：US20100053568A1
公开(公告)日：2010-03-04
申请号：US12551833
申请日：2009-09-01
申请人： Hisashi Okada , Kazuya Minami , Yosuke Nishihata , Yuji Matsuyama
发明人： Hisashi Okada , Kazuya Minami , Yosuke Nishihata , Yuji Matsuyama
IPC分类号： G03B21/16
CPC分类号： G03B21/26
摘要： A projection display device includes: a light modulator for modulating light from a light source; a polarizer disposed at a position facing the light modulator; a cooling section for allowing an air to flow in a space between the light modulator and the polarizer; and an air deflector for deflecting the air flowing in the space between the light modulator and the polarizer toward the polarizer.
摘要翻译：投影显示装置包括：调制器，用于调制来自光源的光; 设置在面向所述光调制器的位置处的偏振器; 用于允许空气在所述光调制器和所述偏振器之间的空间中流动的冷却部分; 以及用于使在光调制器和偏振器之间的空间中流动的空气偏向偏振器的空气导流板。

44. 发明申请

US20060127575A1 Substrate coating unit and substrate coating method 审中-公开
公开(公告)号：US20060127575A1
公开(公告)日：2006-06-15
申请号：US11344017
申请日：2006-02-01
申请人： Yuji Matsuyama
发明人： Yuji Matsuyama
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , B05C11/08 , B05D1/005 , B05D3/10
摘要： The present invention is a coating unit for coating a substrate with a coating solution, comprising a coating solution discharge member for discharging the coating solution to the substrate which is positioned in a downward part. A lower surface of the coating solution discharge member is in a shape having a length longer, at least, than the radius of the substrate and having a narrow width. A coating solution discharge port is disposed in a portion of the coating solution discharge member, facing the center of the substrate, while a solvent mist discharge port for discharging a solvent mist of the coating solution is disposed in a portion facing a peripheral portion including an outer edge potion of the substrate, when the coating solution discharge member is positioned above the radius of the substrate.

45. 发明授权

US06979474B2 Heat treatment method, heat treatment apparatus and treatment system 有权
标题翻译：热处理方法，热处理装置及处理系统
公开(公告)号：US06979474B2
公开(公告)日：2005-12-27
申请号：US09886213
申请日：2001-06-22
申请人： Yuji Matsuyama , Yoji Mizutani , Shinji Nagashima , Akira Yonemizu
发明人： Yuji Matsuyama , Yoji Mizutani , Shinji Nagashima , Akira Yonemizu
IPC分类号： H01L21/00 , H01L21/677 , B05D3/00
CPC分类号： H01L21/67748 , H01L21/67103 , H01L21/67109 , H01L21/67178
摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.
摘要翻译：当涂覆有在高温下氧化的涂布溶液的基材被热处理时，当温度低时，处理气氛的氧浓度降低。接着，在氧浓度降低的处理气氛中进行基板的热处理。接着，在完成热处理后经过预定时间后，处理气氛恢复到原来的氧浓度。由此，能够对涂布液的氧化进行控制，对基板进行热处理。

46. 发明授权

US06633022B2 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06633022B2
公开(公告)日：2003-10-14
申请号：US09819865
申请日：2001-03-29
申请人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
IPC分类号： F27B514
CPC分类号： H01L21/67248
摘要： A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40° C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.
摘要翻译：控制器将热板的温度和紧密封闭的空间中的真空度控制在施加到晶片上的抗蚀剂中含有的薄膜的温度和压力波动，酸产生剂，猝灭剂和聚合物链保护基实际上保留在抗蚀剂中，例如在热处理期间。更具体地，控制器控制热板的温度和紧密封闭的空间中的真空度，使热板的温度达到约40℃，并且紧密封闭空间中的真空度约为5 托尔因此，可以对晶片进行热处理，使得酸发生剂均匀地分散在抗蚀剂中，或者猝灭剂均匀地形成在抗蚀剂的正面上而不会破坏聚合物链保护基。

47. 发明授权

US06485893B1 Resist pattern forming method and film forming method 失效
标题翻译：抗蚀剂图案形成方法和成膜方法
公开(公告)号：US06485893B1
公开(公告)日：2002-11-26
申请号：US09640277
申请日：2000-08-17
申请人： Yuji Matsuyama
发明人： Yuji Matsuyama
IPC分类号： G03C500
CPC分类号： G03F7/16 , G03F7/162 , Y10S430/151
摘要： A surface-active agent is applied onto a surface to be processed of a wafer, onto which a chemical solution of an antireflection film is applied, thereby forming an antireflection film with the thickness of, for example, about 100 nm. Subsequently, the surface-active agent is applied onto a surface of the antireflection film, onto which a resist solution is applied, thereby forming a resist film with the thickness of, for example, about 500 nm. By applying a coating solution such as the chemical solution of the antireflection film, the resist solution and the like onto the surface-active agent as described above, the surface tension of the coating solution is decreased by the action of the surface-active agent, and the coating solution spreads approximately parallel to the surface of the wafer along the top surface of the wafer. Thus, the required coating amount of the coating solution is reduced, and the amount of the chemical solution can be saved.
摘要翻译：将表面活性剂施加到晶片的待处理表面上，在其上施加抗反射膜的化学溶液，从而形成厚度为例如约100nm的抗反射膜。随后，将表面活性剂施加到抗反射膜的施加有抗蚀剂溶液的表面上，由此形成厚度例如为约500nm的抗蚀剂膜。通过如上所述将防反射膜，抗蚀剂溶液等的涂布溶液涂布在表面活性剂上，由于表面活性剂的作用，涂布液的表面张力降低，并且涂覆溶液沿着晶片的顶表面大致平行于晶片的表面扩散。因此，涂布溶液所需的涂布量减少，可以节省化学溶液的量。

48. 发明授权

US06364547B1 Solution processing apparatus 失效
标题翻译：解决方案处理设备
公开(公告)号：US06364547B1
公开(公告)日：2002-04-02
申请号：US09694198
申请日：2000-10-23
申请人： Yuji Matsuyama , Shuichi Nagamine
发明人： Yuji Matsuyama , Shuichi Nagamine
IPC分类号： G03D302
CPC分类号： G03D3/02
摘要： Discharge ports of a supply nozzle are structured to be able to discharge a processing solution in a horizontal direction, and a guide plate for reducing the discharge pressure of the processing solution and guiding the processing solution to an under substrate is provided at a position facing the discharge ports. Thus, the appearance of micro bubbles at the time of the supply of the processing solution to the surface of the substrate can be inhibited, thereby reducing poor developing.
摘要翻译：将供给喷嘴的排出口构造成能够在水平方向上排出处理液，并且在面向该处理液的位置设置有用于降低处理液的排出压力并将处理液引导到下基板的引导板排放口。因此，可以抑制在将处理液供给到基板的表面时的微小气泡的出现，从而减少显影不良。

49. 发明授权

US06332723B1 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US06332723B1
公开(公告)日：2001-12-25
申请号：US09627113
申请日：2000-07-27
申请人： Yuji Matsuyama , Shuichi Nagamine , Koichi Asaka
发明人： Yuji Matsuyama , Shuichi Nagamine , Koichi Asaka
IPC分类号： G03F730
CPC分类号： H01L21/6715 , G03F7/3021 , H01L21/67103 , Y10S134/902
摘要： In a state where a wafer is held by a wafer holding section and a temperature controlled liquid is discharged to a rim area on a rear face of the wafer from flow channels, a developing solution is heaped on a front face of the wafer. Thereafter, the wafer is rotated for a predetermined period of time in a state where the temperature controlled liquid is discharged to the rim area on the rear face of the wafer from the flow channels, whereby developing is performed. The wafer is heated by the wafer holding section with a large heat capacity in an area close to a center of the wafer, and a liquid film of the temperature controlled liquid is formed in the rim area of the wafer, whereby the wafer is heated. At this time, the wafer is rotated, so that the developing solution is stirred.
摘要翻译：在晶片由晶片保持部保持并且温度控制液体从流路向晶片背面的边缘区域排出的状态下，在晶片的正面上堆积显影液。此后，在温度受控液体从流路向晶片背面的边缘区域排出的状态下，将晶片旋转预定时间，由此进行显影。在靠近晶片的中心的区域中，晶片被晶片保持部分加热，并且在晶片的边缘区域形成温度控制液体的液膜，由此加热晶片。此时，晶片旋转，从而搅拌显影液。

50. 发明授权

US06292250B1 Substrate process apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US06292250B1
公开(公告)日：2001-09-18
申请号：US09370210
申请日：1999-08-09
申请人： Yuji Matsuyama
发明人： Yuji Matsuyama
IPC分类号： G03B2732
CPC分类号： H01L21/67178 , H01L21/67098
摘要： A first cooling unit group and a second cooling unit group are disposed in the vicinity of a resist coating unit group. Each of the first cooling unit group and the second cooling unit group is composed of various cooling units. Each of the cooling units cools a wafer. A first heating unit group and a second heating unit group are disposed in the vicinity of a developing unit group. Each of the first heating unit group and the second heating unit group is composed of various heating units. Each of the heating units heats a wafer. A first conveying unit is disposed between the cooling unit groups. A second conveying unit is disposed between the heating unit groups. A transfer table is disposed between the conveying units. The transfer table temporarily holds a wafer. The first conveying unit conveys a wafer among the resist coating unit group, the transfer table, and the cooling unit groups. Thus, even if as the size of a substrate becomes large and thereby large heating unit groups are required, the film thickness of a resist film coated on a substrate can be suppressed from varying against heat generated from the heating unit groups.
摘要翻译：第一冷却单元组和第二冷却单元组设置在抗蚀剂涂布单元组附近。第一冷却单元组和第二冷却单元组各自由各种冷却单元组成。每个冷却单元冷却晶片。第一加热单元组和第二加热单元组设置在显影单元组附近。第一加热单元组和第二加热单元组中的每一个由各种加热单元组成。每个加热单元加热晶片。第一传送单元设置在冷却单元组之间。第二输送单元设置在加热单元组之间。传送台设置在传送单元之间。转印台临时保存晶片。第一输送单元在抗蚀剂涂布单元组，转印台和冷却单元组之间输送晶片。因此，即使随着基板的尺寸变大并且需要大的加热单元组，可以抑制涂覆在基板上的抗蚀剂膜的膜厚度与对加热单元组产生的热量的变化有关。

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