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1. 发明授权

US08995492B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08995492B2
公开(公告)日：2015-03-31
申请号：US14130896
申请日：2012-07-04
申请人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
发明人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
IPC分类号： H01S5/00 , H01S5/22 , H01S5/022 , H01S5/042 , B82Y20/00 , H01S5/02 , H01S5/024 , H01S5/028 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01L24/32 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/028 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2301/176
摘要： To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
摘要翻译：为了提供一种能够防止在结合接合时具有高散热时的倾斜的脊型半导体激光元件，在包括基板的半导体激光元件中，设置在基板上的半导体部分并且在表面上具有脊在与基板相反的一侧，设置在脊上的电极，设置在脊的两侧的半导体部分上的绝缘层和设置在电极上的焊盘电极，其中焊盘电极侧是安装表面所述焊盘电极被设置在所述绝缘层上延伸，并且在所述半导体部分和所述焊盘电极之间的间隔设置在与所述脊部间隔开的部分处。

2. 发明授权

US07764722B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07764722B2
公开(公告)日：2010-07-27
申请号：US12033404
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0267 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/2201 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
摘要翻译：氮化物半导体激光元件具有与氮化物半导体层的空腔端面接触的第一氮化物半导体层，有源层，第二氮化物半导体层和第一保护膜，其中，与至少接触的第一保护膜空腔端面的有源层具有比第一保护膜的最大厚度薄的区域。

3. 发明授权

US08102891B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US08102891B2
公开(公告)日：2012-01-24
申请号：US12716962
申请日：2010-03-03
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.
摘要翻译：氮化物半导体激光元件包括依次层叠具有第一导电类型，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层的氮化物半导体层，空腔端面由氮化物半导体层和形成在腔体端面上的保护膜。第一和第二导电类型的氮化物半导体层具有包含Al的层，并且活性层具有包含In的层。保护膜具有其中晶体的轴向取向与第一和第二导电类型的氮化物半导体层上的空腔端面相同的区域，并且具有另一区域，其中晶体的轴向取向不同于活性层上的腔端面。

4. 发明授权

US07701995B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07701995B2
公开(公告)日：2010-04-20
申请号：US12166746
申请日：2008-07-02
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers.
摘要翻译：一种氮化物半导体激光元件，包括：氮化物半导体层，其中第一导电类型的氮化物半导体层，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层按顺序层压; 由氮化物半导体层形成的腔端面; 以及形成在空腔端面上的保护膜，保护膜具有在氮化物半导体层的层叠方向上晶体的轴向取向不同的区域。

5. 发明授权

US07668218B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07668218B2
公开(公告)日：2010-02-23
申请号：US12033378
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0282 , H01S5/0283 , H01S5/1082 , H01S5/2201 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.
摘要翻译：本发明提供了一种氮化物半导体激光元件，包括：具有第一氮化物半导体层，第二氮化物半导体层和设置在第一和第二氮化物半导体层之间的有源层的氮化物半导体结构; 设置到所述氮化物半导体结构的腔端面; 以及具有六方晶系结构的保护膜，并且具有设置在所述空腔端面中的所述氮化物半导体结构的第一晶面上的第一区域和设置在所述第二晶体表面中的至少一个第一和第二氮化物半导体层，保护膜的第一和第二区域被定向在与第一和第二晶体表面相同的轴向方向上。

6. 发明授权

US07646798B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07646798B2
公开(公告)日：2010-01-12
申请号：US11963825
申请日：2007-12-22
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01S5/0281 , H01S5/0282 , H01S5/22 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at least one end face of the cavity, wherein the protective film is formed of a first film with a crystal structure that has the same axial orientation as that of the nitride semiconductor layer constituting the end face of the cavity, and a second film with a crystal structure that has a different axial orientation from that of the first film, in this order from the side of the end face.
摘要翻译：氮化物半导体激光元件包括：氮化物半导体层，其包括第一氮化物半导体层，有源层和第二氮化物半导体层，并且具有端面的空腔和形成在空腔的至少一个端面上的保护膜，其中所述保护膜由具有与构成空腔的端面的氮化物半导体层相同的轴向定向的晶体结构的第一膜形成，并且具有晶体结构的第二膜具有与第一部电影，从这个顺序从端面的一面。

7. 发明申请

US20050224783A1 Nitride semiconductor laser device and nitride semiconductor device 有权
标题翻译：氮化物半导体激光器件和氮化物半导体器件
公开(公告)号：US20050224783A1
公开(公告)日：2005-10-13
申请号：US10907398
申请日：2005-03-31
申请人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
发明人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
IPC分类号： H01S5/02 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (θa) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.
摘要翻译：氮化物半导体激光装置在氮化物半导体基板的原理面上包括：具有第一导电类型的氮化物半导体层; 包含铟的有源层和具有不同于所述第一导电类型的第二导电类型的氮化物半导体层，并且其表面形成条纹脊; 所述氮化物半导体衬底的所述主面在至少基本上平行于所述条纹脊的方向上具有相对于参考晶面的偏角α（θ_{a ）。}

8. 发明申请

US20080205464A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080205464A1
公开(公告)日：2008-08-28
申请号：US12033404
申请日：2008-02-19
申请人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
发明人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0267 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/2201 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
摘要翻译：氮化物半导体激光元件具有与氮化物半导体层的空腔端面接触的第一氮化物半导体层，有源层，第二氮化物半导体层和第一保护膜，其中，与至少接触的第一保护膜空腔端面的有源层具有比第一保护膜的最大厚度薄的区域。

9. 发明授权

US09318874B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09318874B2
公开(公告)日：2016-04-19
申请号：US12791474
申请日：2010-06-01
申请人： Atsuo Michiue , Yasuhiro Kawata
发明人： Atsuo Michiue , Yasuhiro Kawata
IPC分类号： H01L29/06 , H01S5/22 , H01S5/042 , H01S5/02 , H01S5/323
CPC分类号： H01S5/22 , H01S5/0213 , H01S5/0218 , H01S5/0425 , H01S5/2205 , H01S5/32341 , H01S2301/176
摘要： A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode.
摘要翻译：半导体器件包括堆叠在基板上的半导体层，形成在半导体层的表面上的条形脊，以及形成在脊的上表面上的电极和设置在脊的每一侧上的保护膜。电极包括具有平坦表面的平坦部分，该平坦表面基本上平行于脊部的上表面，并且在平坦部分的两侧上具有倾斜部分，每个倾斜部分具有倾斜表面，该倾斜表面相对于岭。保护膜覆盖从脊的侧表面到电极的倾斜部分的倾斜表面的区域。

10. 发明申请

US20140140362A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20140140362A1
公开(公告)日：2014-05-22
申请号：US14130896
申请日：2012-07-04
申请人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
发明人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01L24/32 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/028 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2301/176
摘要： To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
摘要翻译：为了提供一种能够防止在结合接合时具有高散热时的倾斜的脊型半导体激光元件，在包括基板的半导体激光元件中，设置在基板上的半导体部分并且在表面上具有脊在与基板相反的一侧，设置在脊上的电极，设置在脊的两侧的半导体部分上的绝缘层和设置在电极上的焊盘电极，其中焊盘电极侧是安装表面所述焊盘电极被设置在所述绝缘层上延伸，并且在所述半导体部分和所述焊盘电极之间的间隔设置在与所述脊部间隔开的部分处。

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