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41. 发明授权

US08972988B2 Remote virtual machine migration port management device and system 有权
标题翻译：远程虚拟机迁移端口管理设备和系统
公开(公告)号：US08972988B2
公开(公告)日：2015-03-03
申请号：US13553656
申请日：2012-07-19
申请人： Kozo Ikegami , Takashi Yokoyama
发明人： Kozo Ikegami , Takashi Yokoyama
IPC分类号： G06F9/455 , G06F15/173 , G06F7/00
CPC分类号： G06F9/45545 , G06F9/45558 , G06F2009/4557
摘要： A live migration process between different locations is realized without migrating data stored in a storage area to another location. A network device, which is included in each of locations, for coupling to another one of the locations, the network device stores a program for realizing an access processing module for managing accesses, and coupling management information for managing a coupling relationship between the plurality of virtual machines and the plurality of storage areas, and wherein the access processing module is configured to: receive a notification to start a live migration process, refer to the coupling management information to identify a port for accessing a storage area allocated to a virtual machine; acquire an address of a transfer destination device to which an access request is transferred; generate conversion information; and control the access request based on the conversion information.
摘要翻译：实现不同位置之间的实时迁移过程，而不会将存储在存储区域中的数据迁移到另一位置。网络设备包括在每个位置中，用于耦合到另一个位置，网络设备存储用于实现用于管理访问的访问处理模块的程序，以及耦合用于管理多个站点之间的耦合关系的管理信息虚拟机和多个存储区域，并且其中所述访问处理模块被配置为：接收启动实时迁移过程的通知，参考所述耦合管理信息以识别用于访问分配给虚拟机的存储区域的端口; 获取传送访问请求的传送目的地设备的地址; 生成转换信息; 并根据转换信息控制访问请求。

42. 发明授权

US08881354B2 Tool radius adjusting system for boring holder, tool radius adjusting method in machine tool, and machine tool 有权
标题翻译：镗刀刀具半径调节系统，机床刀具半径调整方式，机床
公开(公告)号：US08881354B2
公开(公告)日：2014-11-11
申请号：US12942433
申请日：2010-11-09
申请人： Eiji Nakamura , Norikazu Sawaki , Akihiko Kadota , Takashi Yokoyama
发明人： Eiji Nakamura , Norikazu Sawaki , Akihiko Kadota , Takashi Yokoyama
IPC分类号： B23B29/034
CPC分类号： B23Q17/2457 , B23B29/03421 , B23B29/03425 , B23B2250/04 , B23B2260/092 , B23B2270/025 , B23B2270/027 , B23B2270/48 , Y10T29/5105 , Y10T82/10 , Y10T408/03 , Y10T408/08 , Y10T408/175 , Y10T408/85 , Y10T408/858
摘要： A boring holder in a tool radius adjusting system is provided with a cutting blade and fine and coarse motion adjusting mechanisms each capable of adjusting the position of the cutting blade relative to a rotational axis of the boring holder. The tool radius adjusting system is provided with a tool radius measuring device for measuring the tool radius of the boring holder and a controller configured to calculate a compensation amount based on a tool radius measured by the tool radius measuring device and a target tool radius and to operate the fine and coarse motion adjusting mechanisms based on the compensation amount so that the tool radius is brought into agreement with the target tool radius.
摘要翻译：刀具半径调节系统中的钻头支架设置有切割刀片和精细和粗略的运动调节机构，每个机构能够调节切割刀片相对于镗刀架的旋转轴线的位置。刀具半径调节系统设置有用于测量镗刀架的刀具半径的刀具半径测量装置和配置为基于由刀具半径测量装置测量的刀具半径和目标刀具半径来计算补偿量的控制器，并且基于补偿量运行精细和粗调运动调节机构，使刀具半径与目标刀具半径一致。

43. 发明授权

US08563442B2 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate 有权
标题翻译：氮化合物半导体衬底和氮化合物半导体衬底的制造方法以及单晶SiC衬底和单晶SiC衬底的制造方法
公开(公告)号：US08563442B2
公开(公告)日：2013-10-22
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3转换为单晶SiC层6，将与嵌入绝缘层4的界面8附近的Si层作为残留Si层5 。

44. 发明授权

US08191515B2 V-type internal combustion engine including throttle valve device, and vehicle incorporating same 有权
标题翻译： V型内燃机，包括节流阀装置，以及包含其的车辆
公开(公告)号：US08191515B2
公开(公告)日：2012-06-05
申请号：US12386555
申请日：2009-04-20
申请人： Masahiro Kontani , Takashi Yokoyama
发明人： Masahiro Kontani , Takashi Yokoyama
IPC分类号： F02B75/22
CPC分类号： F02B75/22 , F01L1/182 , F01L1/20 , F01L2001/0535 , F02B61/02 , F02M35/10032 , F02M35/10216 , F02M35/116 , F02M35/162 , F02M61/145
摘要： A V-type internal combustion engine includes a crankcase, a crankshaft disposed in the crankcase, and first and second banks operatively attached to the crankcase. The engine also includes a throttle body, an electric motor and a force-transmitting device arranged between the first and second banks. The force-transmitting device is disposed adjacent the front bank with respect to the throttle body. The force-transmitting device is disposed on a non-transmitting portion side opposite to a side where a timing mechanism is located with respect to a branch pipe of an intake air routing pipe, which supplies intake air into a cylinder adjacent to the timing mechanism of the first bank. An electric motor for operating the throttle valve is provided in the throttle body, and fuel injection valves are arranged between the banks.
摘要翻译： V型内燃机包括曲轴箱，设置在曲轴箱中的曲轴，以及可操作地附接到曲轴箱的第一和第二组。发动机还包括节气门体，电动机和布置在第一和第二组之间的力传递装置。力传递装置相对于节气门体相对于前排设置。力传递装置设置在相对于进气导管的分支管相对于正时机构的一侧的非透射部侧侧，该进气导入管将吸入空气供给到邻近定时机构第一家银行在节气门体上设置有用于操作节气门的电动机，并且燃料喷射阀布置在气缸之间。

45. 发明授权

US08033270B2 Fuel distribution apparatus for a V-type engine 有权
标题翻译：用于V型发动机的燃油分配装置
公开(公告)号：US08033270B2
公开(公告)日：2011-10-11
申请号：US12392402
申请日：2009-02-25
申请人： Naoto Yamagishi , Takashi Yokoyama
发明人： Naoto Yamagishi , Takashi Yokoyama
IPC分类号： F02M55/02 , F02M55/00
CPC分类号： F02B75/22 , F02M37/007
摘要： A fuel distribution apparatus for a V-type engine wherein first and second throttle bodies connected to first and second banks disposed in a V shape, respectively, are disposed therebetween and a main fuel distribution pipe for distributing fuel from a common fuel supply system is connected to first and second fuel injection valves provided in the first and second throttle bodies, respectively, is configured such that the fuel distribution pipe is formed from first and second distribution pipes separate from each other and connected to the first and second fuel injection valves and besides fastened to the first and second throttle bodies, respectively, a joint pipe connects the fuel supply to the first or second distribution pipes. Communication conduit connects the first and second distribution pipes.
摘要翻译：一种用于V型发动机的燃料分配装置，其中分别设置有连接到V形状的第一和第二排的第一和第二节流体，并且连接用于从公共燃料供应系统分配燃料的主燃料分配管设置在第一和第二节流体中的第一和第二燃料喷射阀分别被构造成使得燃料分配管由彼此分离并连接到第一和第二燃料喷射阀的第一和第二分配管形成，此外分别固定在第一和第二节流体上，连接管将燃料供给部与第一或第二分配管连接起来。通信管道连接第一和第二分配管道。

46. 发明申请

US20110089433A1 METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE 有权
标题翻译：制造氮化合物半导体衬底和氮化物半导体衬底的方法以及制造单晶SIC衬底和单晶SIC衬底的方法
公开(公告)号：US20110089433A1
公开(公告)日：2011-04-21
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L29/24 , C30B25/02 , C30B25/10 , C30B29/06 , C30B29/36
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3变为单晶SiC层6，将表面Si层3转换为单晶SIC层6，在界面8附近的Si层与留下绝缘层4作为残留Si层5。

47. 发明授权

US07733859B2 Apparatus and method for packet forwarding in layer 2 network 失效
标题翻译：第2层网络中数据包转发的装置和方法
公开(公告)号：US07733859B2
公开(公告)日：2010-06-08
申请号：US11751158
申请日：2007-05-21
申请人： Tadashi Takahashi , Hiroaki Miyata , Takashi Yokoyama , Masanori Kamata
发明人： Tadashi Takahashi , Hiroaki Miyata , Takashi Yokoyama , Masanori Kamata
IPC分类号： H04L12/28
CPC分类号： H04L12/4625 , H04L49/35 , H04L63/0236
摘要： A packet forwarding apparatus with a function of registering packet forwarding control information for each user terminal into a user management table during PPPoE connection and authentication phases in which the apparatus carries out predetermined communication procedures with each user terminal. During DHCP and IP forwarding phases following the authentication phase, the packet forwarding apparatus controls packet forwarding based on the user management table. Packets are forwarded in the form of PPPoE frame until the authentication phase is completed and packets are forwarded in the form of Ethernet frame in the DHCP and IP forwarding phases.
摘要翻译：一种分组转发装置，其功能是在每个用户终端执行预定的通信过程的PPPoE连接和认证阶段期间，将每个用户终端的分组转发控制信息注册到用户管理表中。在验证阶段之后的DHCP和IP转发阶段，报文转发装置根据用户管理表控制报文转发。分组以PPPoE帧的形式转发，直到认证阶段完成，并在DHCP和IP转发阶段以以太网帧的形式转发数据包。

48. 发明授权

US07691203B2 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US07691203B2
公开(公告)日：2010-04-06
申请号：US11341093
申请日：2006-01-27
申请人： Toru Inagaki , Takahiro Shirahata , Takashi Yokoyama , Michihiro Sano , Naochika Horio
发明人： Toru Inagaki , Takahiro Shirahata , Takashi Yokoyama , Michihiro Sano , Naochika Horio
IPC分类号： C23C16/22 , H01L21/36 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/4411 , C23C16/4412 , C23C16/45563 , C23C16/4584 , C30B25/14 , C30B29/16
摘要： A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.
摘要翻译：提供了一种成膜装置，其可以在到达装置内被处理的基板之前防止源气体一起反应，从而最小化来自基板的辐射热的影响，并使反应室中的气体行为更好地用于晶体膜形成。该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。该装置具有处理室1，其中放置有基板5。处理室1至少由基板5分成加热室1a和反应室1b，使得基板表面能够暴露于反应室1b中的源气体。该装置还具有排气管7，排气可以排出。排气管7面对暴露的基板表面并与反应室1b连接。该装置还具有第一供应端口11和第二供应端口12，第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应，从而可以在基板上进行高质量的晶体成膜。

49. 发明授权

US07532624B2 Multicast packet control apparatus 有权
标题翻译：组播包控制装置
公开(公告)号：US07532624B2
公开(公告)日：2009-05-12
申请号：US11508240
申请日：2006-08-23
申请人： Kozo Ikegami , Takashi Yokoyama , Minoru Nagai , Yoshitaka Sakamoto , Shigehiro Onizawa
发明人： Kozo Ikegami , Takashi Yokoyama , Minoru Nagai , Yoshitaka Sakamoto , Shigehiro Onizawa
IPC分类号： H04L12/28
CPC分类号： H04L12/1881
摘要： When multicast distribution is performed on a network where a point-to-point connection is made between user terminals and a multicast router, the multicast router is protected from load due to response reports, join requests, or leave statements sent from the user terminals simultaneously. If the user terminals send response reports simultaneously, a Layer 2 switch disposed between the user terminals and the multicast router limits response reports sent to the multicast router. The Layer 2 switch prevents response reports sent from the same user terminal from being discarded consecutively, by sending a response report sent from the same user terminal to the multicast router 200 with priority in the next join confirmation event. If the user terminals send join requests or leave statements simultaneously, the Layer 2 switch limits the join requests or leave statements sent to the multicast router 200 in the same manner. The Layer 2 switch further enlarges a transmission buffer thereof at the multicast router side, so that the packets can be stored in the buffer.
摘要翻译：当在用户终端和组播路由器之间进行点对点连接的网络上执行组播分发时，由于响应报告，加入请求或者从用户终端同时发送的离开语句，组播路由器受到保护而受到保护。如果用户终端同时发送响应报告，则设置在用户终端和组播路由器之间的二层交换机限制发送给组播路由器的响应报告。第二层交换机防止从同一用户终端发送的响应报告被连续丢弃，通过在下一个加入确认事件中以优先级的方式发送从同一用户终端发送到组播路由器200的响应报告。如果用户终端同时发送加入请求或离开语句，则二层交换机以相同的方式限制加入请求或发送到组播路由器200的语句。二层交换机进一步放大了组播路由器侧的发送缓冲区，使得分组可以存储在缓冲器中。

50. 发明申请

US20090108367A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090108367A1
公开(公告)日：2009-04-30
申请号：US12246210
申请日：2008-10-06
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01L47/00 , H01L21/76
CPC分类号： H01L21/823807 , H01L27/0207 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device includes: an element isolation region configured to be formed in a semiconductor substrate; a P-type field effect transistor configured to be formed in a first element formation region of the semiconductor substrate for which isolation by the element isolation region is carried out; an N-type substrate region configured to be formed in the semiconductor substrate for which isolation by the element isolation region is carried out, arsenic being ion-implanted into the N-type substrate region; a nickel silicide layer configured to be formed on the N-type substrate region; a first insulating film configured to cover the P-type field effect transistor and have compressive stress; and a second insulating film configured to cover the N-type substrate region and have tensile stress or compressive stress lower than the compressive stress of the first insulating film.
摘要翻译：本发明提供一种半导体器件，包括：元件隔离区，被配置为形成在半导体衬底中; P型场效应晶体管被配置为形成在半导体衬底的由元件隔离区进行隔离的第一元件形成区域中; 构造成形成在半导体衬底中的由元件隔离区进行隔离的N型衬底区域，将砷离子注入到N型衬底区域中; 构造成形成在所述N型衬底区域上的硅化镍层; 配置为覆盖P型场效应晶体管并具有压应力的第一绝缘膜; 以及第二绝缘膜，其构造成覆盖所述N型基板区域，并且具有比所述第一绝缘膜的压缩应力低的拉伸应力或压缩应力。

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