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41. 发明申请

US20110155905A1 SPECIMEN OBSERVATION METHOD AND DEVICE, AND INSPECTION METHOD AND DEVICE USING THE METHOD AND DEVICE 有权
标题翻译：标本观察方法和装置，以及使用方法和装置的检查方法和装置
公开(公告)号：US20110155905A1
公开(公告)日：2011-06-30
申请号：US12937145
申请日：2009-04-10
申请人： Masahiro Hatakeyama , Takeshi Murakami , Yoshihiko Naito , Kenji Terao , Norio Kimura , Kenji Watanabe
发明人： Masahiro Hatakeyama , Takeshi Murakami , Yoshihiko Naito , Kenji Terao , Norio Kimura , Kenji Watanabe
IPC分类号： G01N23/225 , G01N23/00
CPC分类号： H01J37/28 , H01J37/22 , H01J37/244 , H01J37/29 , H01J2237/24475 , H01J2237/24585 , H01J2237/24592 , H01J2237/2805 , H01J2237/2806 , H01J2237/2817 , H01L22/12
摘要： A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.
摘要翻译：提供了一种技术，其能够提高在未经常被注意的能量区域中使用电子束观察样本的能力。该样本观察方法包括：用电子束照射样本; 检测已经产生的待观察的电子，并通过电子束照射获得关于样品的信息; 以及从所检测的电子产生待观察的样本的图像。电子束照射包括用电子束照射样本，其中在其中检测到二次发射电子的二次发射电子区域和其中检测到反射镜电子的镜电子区域之间的过渡区域中设置的着陆能量，从而使次级发射电子和镜电子作为待观察的电子进行混合。要观察的电子的检测包括在二次发射电子和镜电子混合的状态下进行检测。对于100nm以下的细小异物和图案，可以快速进行观察和检查。

42. 发明申请

US20080067377A1 ELECTRON BEAM APPARATUS AND AN ABERRATION CORRECTION OPTICAL APPARATUS 有权
标题翻译：电子束装置和抛光校正光学装置
公开(公告)号：US20080067377A1
公开(公告)日：2008-03-20
申请号：US11760235
申请日：2007-06-08
申请人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata
发明人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata
IPC分类号： G21K7/00
CPC分类号： H01J37/153 , H01J37/065 , H01J2237/061 , H01J2237/06375 , H01J2237/083 , H01J2237/1534 , H01J2237/24592 , H01J2237/28
摘要： An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1/4 plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
摘要翻译：一种用于提供诸如半导体晶片的样品的评估的电子束装置，其包括具有不大于0.1μm的最小线宽的微量图案，具有高生产量。由电子枪产生的一次电子束照射在样品上，从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。电子枪61具有阴极1和拉伸电极3，阴极的电子发射表面1a限定凹面。拉制电极3具有由面对阴极的电子发射表面1a的第二球体的部分外表面和由电子通过凸面形成的孔73构成的凸面3a。像差校正光学装置包括两个相同大小的多极维恩滤波器，其布置成使得它们的中心分别与像差校正光学中的物平面图像平面段的1/4平面位置和¾平面位置对准装置和具有分别设置在像差校正光学装置中的物平面位置，中间图像形成平面位置和图像平面位置的双向焦点的光学元件。

43. 发明授权

US07863580B2 Electron beam apparatus and an aberration correction optical apparatus 有权
标题翻译：电子束装置和像差校正光学装置
公开(公告)号：US07863580B2
公开(公告)日：2011-01-04
申请号：US11760235
申请日：2007-06-08
申请人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama
发明人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama
IPC分类号： G21K1/08 , H01J3/14 , H01J3/26
CPC分类号： H01J37/153 , H01J37/065 , H01J2237/061 , H01J2237/06375 , H01J2237/083 , H01J2237/1534 , H01J2237/24592 , H01J2237/28
摘要： An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
摘要翻译：一种用于提供诸如半导体晶片的样品的评估的电子束装置，其包括具有不大于0.1μm的最小线宽的微图案，具有高生产量。由电子枪产生的一次电子束照射在样品上，从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。电子枪61具有阴极1和牵伸电极3，阴极的电子发射表面1a限定凹面。拉制电极3具有由与阴极的电子发射表面1a相对的第二球体的局部外表面和由电子通过凸面形成的孔73构成的凸面3a。像差校正光学装置包括两个相同尺寸的多极维纳滤光器，其布置成使得它们的中心分别沿着像差校正光学装置中的物平面图像平面段与¼平面位置和¾平面位置对准，以及分别设置在像差校正光学装置中的物平面位置，中间图像形成面位置和像面位置的具有双向焦点的光学元件。

44. 发明授权

US07952071B2 Apparatus and method for inspecting sample surface 有权
标题翻译：用于检查样品表面的装置和方法
公开(公告)号：US07952071B2
公开(公告)日：2011-05-31
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译：提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

45. 发明申请

US20070200569A1 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
公开(公告)号：US20070200569A1
公开(公告)日：2007-08-30
申请号：US11723591
申请日：2007-03-21
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01R31/305
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

46. 发明申请

US20050199807A1 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
标题翻译：具有详细观察功能的电子束装置和使用电子束装置的样品检查和观察方法
公开(公告)号：US20050199807A1
公开(公告)日：2005-09-15
申请号：US11019111
申请日：2004-12-22
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01N23/00 , G01R31/305 , G21K7/00
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.
摘要翻译：提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域电子束，以便提供缺陷区域的放大或详细观察。

47. 发明申请

US20090026368A1 APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE 有权
标题翻译：检测样品表面的装置和方法
公开(公告)号：US20090026368A1
公开(公告)日：2009-01-29
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译：提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

48. 发明授权

US07352195B2 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
标题翻译：具有详细观察功能的电子束装置和使用电子束装置的样品检查和观察方法
公开(公告)号：US07352195B2
公开(公告)日：2008-04-01
申请号：US11723591
申请日：2007-03-21
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01N23/00
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.
摘要翻译：提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域电子束，以便提供缺陷区域的放大或详细观察。

49. 发明授权

US07212017B2 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
标题翻译：具有详细观察功能的电子束装置和使用电子束装置的样品检查和观察方法
公开(公告)号：US07212017B2
公开(公告)日：2007-05-01
申请号：US11019111
申请日：2004-12-22
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01N23/00
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.
摘要翻译：提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域电子束，以便提供缺陷区域的放大或详细观察。

50. 发明授权

US07391036B2 Sample surface inspection apparatus and method 有权
公开(公告)号：US07391036B2
公开(公告)日：2008-06-24
申请号：US10511396
申请日：2003-04-17
申请人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
发明人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
IPC分类号： G01N13/10 , B05D1/36
CPC分类号： G03F7/162 , G01N23/225 , H01J37/285 , H01J2237/204 , H01J2237/2812 , H01J2237/2814 , H01J2237/2855 , H01J2237/2857
摘要： The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.

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