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1. 发明公开

CN104272426A 扫描电子显微镜有权
公开(公告)号：CN104272426A
公开(公告)日：2015-01-07
申请号：CN201380021994.9
申请日：2013-03-25
申请人：株式会社日立高新技术
发明人：小柏刚 , 佐藤贡 , 今野充
IPC分类号： H01J37/28 , H01J37/04 , H01J37/244 , H01J37/295
CPC分类号： H01J37/222 , H01J37/21 , H01J37/263 , H01J37/28 , H01J2237/10 , H01J2237/24475 , H01J2237/24507 , H01J2237/2802 , H01J2237/2804 , H01J2237/2805 , H01J2237/2826 , H01J37/09 , H01J37/244 , H01J2237/24455 , H01J2237/24465
摘要：在现有技术中，通用的扫描电子显微镜中，可设定的最大加速电压低，因此在通常的高分辨率观察条件下可观察的晶体薄膜样本仅限于晶格面间隔大的样本。因此，没有高精度地进行倍率校正的手段。作为解决手段，本发明的特征在于，具备：电子源，其产生电子束；偏转器，其执行偏转，以便利用所述电子束在所述样本上进行扫描；物镜，其使所述电子束会聚在所述样本上；检测器，其检测透过了所述样本的散射电子以及非散射电子；和光圈，其配置在所述样本与所述检测器之间，对所述散射电子以及所述非散射电子的检测角进行控制；所述电子束以规定的开角入射至样本，以比在所述样本上电子束直径成为最小的第一开角大的第二开角来获取晶格像。

2. 发明授权

CN104272426B 扫描电子显微镜有权
公开(公告)号：CN104272426B
公开(公告)日：2016-08-24
申请号：CN201380021994.9
申请日：2013-03-25
申请人：株式会社日立高新技术
发明人：小柏刚 , 佐藤贡 , 今野充
IPC分类号： H01J37/28 , H01J37/04 , H01J37/244 , H01J37/295
CPC分类号： H01J37/222 , H01J37/21 , H01J37/263 , H01J37/28 , H01J2237/10 , H01J2237/24475 , H01J2237/24507 , H01J2237/2802 , H01J2237/2804 , H01J2237/2805 , H01J2237/2826
摘要：在现有技术中，通用的扫描电子显微镜中，可设定的最大加速电压低，因此在通常的高分辨率观察条件下可观察的晶体薄膜样本仅限于晶格面间隔大的样本。因此，没有高精度地进行倍率校正的手段。作为解决手段，本发明的特征在于，具备：电子源，其产生电子束；偏转器，其执行偏转，以便利用所述电子束在所述样本上进行扫描；物镜，其使所述电子束会聚在所述样本上；检测器，其检测透过了所述样本的散射电子以及非散射电子；和光圈，其配置在所述样本与所述检测器之间，对所述散射电子以及所述非散射电子的检测角进行控制；所述电子束以规定的开角入射至样本，以比在所述样本上电子束直径成为最小的第一开角大的第二开角来获取晶格像。

3. 发明授权

US08937283B2 Specimen observation method and device using secondary emission electron and mirror electron detection 有权
标题翻译：使用二次发射电子和镜电子检测的样本观察方法和装置
公开(公告)号：US08937283B2
公开(公告)日：2015-01-20
申请号：US12937145
申请日：2009-04-10
申请人： Masahiro Hatakeyama , Takeshi Murakami , Yoshihiko Naito , Kenji Terao , Norio Kimura , Kenji Watanabe
发明人： Masahiro Hatakeyama , Takeshi Murakami , Yoshihiko Naito , Kenji Terao , Norio Kimura , Kenji Watanabe
IPC分类号： H01J37/29 , H01J37/28 , H01J37/244 , H01L21/66
CPC分类号： H01J37/28 , H01J37/22 , H01J37/244 , H01J37/29 , H01J2237/24475 , H01J2237/24585 , H01J2237/24592 , H01J2237/2805 , H01J2237/2806 , H01J2237/2817 , H01L22/12
摘要： A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.
摘要翻译：提供了一种技术，其能够提高在未经常被注意的能量区域中使用电子束观察样本的能力。该样本观察方法包括：用电子束照射样本; 检测已经产生的待观察的电子，并通过电子束照射获得关于样品的信息; 以及从所检测的电子产生待观察的样本的图像。电子束照射包括用电子束照射样本，其中在其中检测到二次发射电子的二次发射电子区域和其中检测到反射镜电子的镜电子区域之间的过渡区域中设置的着陆能量，从而使次级发射电子和镜电子作为待观察的电子进行混合。要观察的电子的检测包括在二次发射电子和镜电子混合的状态下进行检测。对于100nm以下的细小异物和图案，可以快速进行观察和检查。

4. 发明公开

EP3379557A1 SCANNING TRANSMISSION ELECTRON MICROSCOPE AND METHOD FOR HIGH THROUGHPUT ACQUISITION OF ELECTRON SCATTERING ANGLE DISTRIBUTION IMAGES 审中-公开
公开(公告)号：EP3379557A1
公开(公告)日：2018-09-26
申请号：EP17000450.1
申请日：2017-03-20
申请人： TESCAN Brno, s.r.o. , Tescan Tempe, LLC.
发明人： Petras, Stanislav , Lencová, Bohumila , Benner, Gerd Ludwig , Weiss, Jon Karl
IPC分类号： H01J37/28 , H01J37/244 , G01N23/20
CPC分类号： H01J37/28 , G01N23/20 , H01J37/244 , H01J2237/1506 , H01J2237/2802 , H01J2237/2805
摘要： The invention provides a method and the electron beam device (1) for high throughput acquisition of electron scattering angle distribution images for structural determination of materials and which can be applied to nanoscale structures. The electron beam device (1) according the invention is optimized for producing the electron scattering angle distribution image of object in low magnification and is characterized in that the electron beam system (1) further comprises a detector scan system (18) optimized for a fast off-axis shift of the electron scattering angle distribution image over the detector plane and beam blanker (23) which is blanking the beam (3,6) while the detector scan system (18) moves the transmitted electron beam (6) between subfields and during the readout of detector (12).

5. 发明申请

US20180166253A1 Image Capture Assembly and Method for Electron Back Scatter Diffraction 审中-公开
$Image Capture Assembly and Method for Electron Back Scatter Diffraction$
公开(公告)号：US20180166253A1
公开(公告)日：2018-06-14
申请号：US15837587
申请日：2017-12-11
申请人： VG Systems Limited
发明人： Zoran PESIC , Chris STEPHENS , Austin DAY , Bryan BARNARD
IPC分类号： H01J37/22 , H01J37/28
CPC分类号： H01J37/224 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/295 , H01J2237/024 , H01J2237/10 , H01J2237/2443 , H01J2237/24475 , H01J2237/2804 , H01J2237/2805
摘要： The invention relates to an image capture assembly and method for use in an electron backscatter diffraction (EBSD) system. An image capture assembly comprises a scintillation screen (10) including a predefined screen region (11), an image sensor (20) comprising an array of photo sensors and a lens assembly (30). The image capture assembly is configured to operate in at least a first configuration or a second configuration. In the first configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto the array and in the second configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto a sub-region (21) of the array. In each of the first and second configurations the field of view of the lens assembly (30) is the same.

6. 发明申请

US20160123905A1 Inspection of inconsistencies in and on semiconductor devices and structures 审中-公开
标题翻译：检查半导体器件和结构中的不一致性
公开(公告)号：US20160123905A1
公开(公告)日：2016-05-05
申请号：US14532773
申请日：2014-11-04
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Hsiang-Chou Liao , Tuung Luoh , Ling-Wuu Yang , Tahone Yang , Kuang-Chao Chen
IPC分类号： G01N23/203 , H01J37/252 , H01L21/66
CPC分类号： G01N23/203 , H01J2237/2805 , H01J2237/2817 , H01L22/12
摘要： Disclosed embodiments are generally related to semiconductor device inspection. One such embodiment involves positioning a detector at a distance from a surface of the semiconductor device being inspected and applying an energy to the semiconductor device. In the disclosed embodiment, the detector receives back-scattered energy resulting from applying the energy to the semiconductor device and the resultant back-scattered energy is processed and analyzed to determine whether defects are beneath the surface of the semiconductor device. The magnitude of the applied energy and the distance between the detector and the surface of the semiconductor device are selected so as to allow back-scattered electrons returned from applying to be effectively received by the detector.
摘要翻译：公开的实施例通常涉及半导体器件检查。一个这样的实施例涉及将检测器定位在距待检查的半导体器件的表面一定距离处，并向半导体器件施加能量。在所公开的实施例中，检测器接收由向半导体器件施加能量所产生的反向散射能量，并且对所得到的反向散射能量进行处理和分析，以确定缺陷是否在半导体器件的表面之下。选择所施加的能量的大小以及检测器与半导体器件的表面之间的距离，以便允许从施加返回的反向散射电子被检测器有效地接收。

7. 发明申请

US20150060666A1 SPECIMEN OBSERVATION METHOD AND DEVICE USING SECONDARY EMISSION ELECTRON AND MIRROR ELECTRON DETECTION 有权
标题翻译：使用二次发射电子和物镜电子检测的样本观测方法和装置
公开(公告)号：US20150060666A1
公开(公告)日：2015-03-05
申请号：US14533974
申请日：2014-11-05
申请人： EBARA CORPORATION
发明人： Masahiro Hatakeyama , Takeshi Murakami , Yoshihiko Naito , Kenji Terao , Norio Kimura , Kenji Watanabe
IPC分类号： H01J37/28 , H01J37/22
CPC分类号： H01J37/28 , H01J37/22 , H01J37/244 , H01J37/29 , H01J2237/24475 , H01J2237/24585 , H01J2237/24592 , H01J2237/2805 , H01J2237/2806 , H01J2237/2817 , H01L22/12
摘要： A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.
摘要翻译：提供了一种技术，其能够提高在未经常被注意的能量区域中使用电子束观察样本的能力。该样本观察方法包括：用电子束照射样本; 检测已经产生的待观察的电子，并通过电子束照射获得关于样品的信息; 以及从所检测的电子产生待观察的样本的图像。电子束照射包括用电子束照射样本，其中在其中检测到二次发射电子的二次发射电子区域和其中检测到反射镜电子的镜电子区域之间的过渡区域中设置的着陆能量，从而使次级发射电子和镜电子作为待观察的电子进行混合。要观察的电子的检测包括在二次发射电子和镜电子混合的状态下进行检测。对于100nm以下的细小异物和图案，可以快速进行观察和检查。

8. 发明申请

US20130248706A1 SAMPLE ANALYZING APPARATUS AND SAMPLE ANALYZING METHOD 有权
标题翻译：样品分析装置和样品分析方法
公开(公告)号：US20130248706A1
公开(公告)日：2013-09-26
申请号：US13605580
申请日：2012-09-06
申请人： Haruko AKUTSU
发明人： Haruko AKUTSU
IPC分类号： G01N23/00
CPC分类号： H01J37/263 , G01N23/22 , G01N23/2251 , G01N2223/6116 , H01J37/24 , H01J37/244 , H01J37/26 , H01J37/28 , H01J2237/221 , H01J2237/24485 , H01J2237/24528 , H01J2237/24585 , H01J2237/2804 , H01J2237/2805 , H01J2237/2806 , H01J2237/2814
摘要： In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.
摘要翻译：根据实施例，样本分析装置包括充电光束产生单元，检测单元和分析单元。带电波束产生单元被配置为产生带电波束并将带电波束施加到样品。检测单元被配置为检测带电粒子，然后输出信号，所述带电粒子是通过以取决于样本的三维结构和材料特性的方式施加带电束而从样品产生的。分析单元被配置为处理信号以分析样本。

9. 发明授权

US09244025B2 Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern 有权
$Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern$
标题翻译：透射电子衍射测定装置及透射电子衍射图案测定方法
公开(公告)号：US09244025B2
公开(公告)日：2016-01-26
申请号：US14305173
申请日：2014-06-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Daisuke Ohgarane , Koji Dairiki , Masahiro Takahashi , Shunichi Ito , Erika Takahashi
IPC分类号： G01N23/205 , G01N23/20 , H01J37/06
CPC分类号： G01N23/2055 , G01N23/20058 , G01N2223/61 , H01J37/06 , H01J2237/2065 , H01J2237/2805
摘要： Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.
摘要翻译：提供一种包括电子枪的透射电子衍射测量装置; 电子枪下的第一光学系统; 第一光学系统下的样品室; 样品室下方的第二光学系统; 第二光学系统下的观察室; 通过从观察室中的电子接收能量而发光的区域; 以及面向该地区的相机。

10. 发明授权

US08780193B2 Physical properties measuring method and apparatus 有权
标题翻译：物理性能测量方法和装置
公开(公告)号：US08780193B2
公开(公告)日：2014-07-15
申请号：US13071797
申请日：2011-03-25
申请人： Takashi Yamazaki , Takeshi Soeda
发明人： Takashi Yamazaki , Takeshi Soeda
IPC分类号： H04N7/18 , H01J37/28
CPC分类号： H04N7/18 , G06T7/62 , G06T7/66 , G06T2207/10056 , G06T2207/30108 , H01J37/26 , H01J37/28 , H01J37/295 , H01J2237/22 , H01J2237/24578 , H01J2237/2805
摘要： A physical properties measuring method includes: acquiring an experimental convergent beam electron diffraction image of a sample by using a transmission electron microscope; calculating Zernike moment intensities of the experimental convergent beam electron diffraction image; and comparing the Zernike moment intensities of the experimental convergent beam electron diffraction image with Zernike moment intensities of calculated convergent beam electron diffraction images calculated on changed physical properties of the sample.
摘要翻译：物理性质测量方法包括：使用透射电子显微镜获取样品的实验收敛束电子衍射图像; 计算实验收敛束电子衍射图像的泽尼克力矩; 并且将实验收敛束电子衍射图像的泽尼克力矩与用样品的改变的物理性质计算的计算的收敛束电子衍射图像的泽尼克力矩进行比较。

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