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41. 发明授权

US08357946B2 Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
公开(公告)号：US08357946B2
公开(公告)日：2013-01-22
申请号：US13189194
申请日：2011-07-22
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L27/15
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
摘要翻译：提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0

42. 发明授权

US08405066B2 Nitride-based semiconductor light-emitting device 有权
标题翻译：氮化物系半导体发光元件
公开(公告)号：US08405066B2
公开(公告)日：2013-03-26
申请号：US12999987
申请日：2010-06-14
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/12
摘要： A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN. The principal surface S1 extends along a reference plane S5 tilting from a plane perpendicular to the c-axis of the hexagonal gallium nitride-based semiconductor at a tilt angle in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees.
摘要翻译：提供了一种具有提高载流子注入阱层效率的氮化物基半导体发光器件。氮化物系半导体发光元件包括六方晶系氮化镓系半导体基板5，配置在基板5的主面S1上的n型氮化镓系半导体区域7，发光层11具有设置在n型氮化镓系半导体区域7上的单量子阱结构以及配置在发光层11上的p型氮化镓系半导体区域19.发光层11配置在 n型氮化镓基半导体区域7和p型氮化镓基半导体区域19.发光层11包括阱层15和势垒层13和17.阱层15包括InGaN。主表面S1沿着垂直于六方晶系氮化镓基半导体的c轴的平面倾斜的参考平面S5延伸，倾斜角度在不小于63度且不大于80度的范围内，或者在范围不小于100度且不大于117度。

43. 发明授权

US08513684B2 Nitride semiconductor light emitting device 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US08513684B2
公开(公告)日：2013-08-20
申请号：US13294034
申请日：2011-11-10
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3202 , H01S5/3211
摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.
摘要翻译：提供一种氮化物半导体发光器件。核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。核心半导体区域包括有源层和载流子阻挡层。第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

44. 发明授权

US08476615B2 GaN-based semiconductor light emitting device and the method for making the same 失效
标题翻译： GaN系半导体发光元件及其制造方法
公开(公告)号：US08476615B2
公开(公告)日：2013-07-02
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

45. 发明授权

US09231370B2 Group III nitride semiconductor light emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US09231370B2
公开(公告)日：2016-01-05
申请号：US13453743
申请日：2012-04-23
申请人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
发明人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
IPC分类号： H01S5/042 , H01S5/32 , H01S5/343 , B82Y20/00 , H01S5/02 , H01S5/028 , H01S5/22
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。欧姆电极通过绝缘层的开口与第三区域接触。第一部分具有延伸到第一端面边缘的第一臂。第三部分远离第一端面边缘。

46. 发明申请

US20120061643A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME 失效
标题翻译：基于GaN的半导体发光器件及其制造方法
公开(公告)号：US20120061643A1
公开(公告)日：2012-03-15
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13，低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

47. 发明申请

US20110175201A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III类氮化物半导体器件
公开(公告)号：US20110175201A1
公开(公告)日：2011-07-21
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L29/20
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

48. 发明授权

US08415707B2 Group III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件
公开(公告)号：US08415707B2
公开(公告)日：2013-04-09
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区域具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

49. 发明授权

US07955881B2 Method of fabricating quantum well structure 有权
标题翻译：量子阱结构的制作方法
公开(公告)号：US07955881B2
公开(公告)日：2011-06-07
申请号：US12500074
申请日：2009-07-09
申请人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
发明人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
摘要翻译：在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。阱层包含含有铟作为成分的III族氮化物半导体。在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。阻挡层在高于第一温度的第二温度下在中间层上生长。包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

50. 发明授权

US08174035B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08174035B2
公开(公告)日：2012-05-08
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
发明人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

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