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    • 41. 发明授权
    • MOS-type solid-state imaging apparatus using a unit cell formed of a photoelectric converter, amplification transistor, address capacitor, and reset transistor
    • 使用由光电转换器,放大晶体管,地址电容器和复位晶体管形成的单元的MOS型固体摄像装置
    • US06239839B1
    • 2001-05-29
    • US09022124
    • 1998-02-11
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • H04N5335
    • H04N5/3658H01L27/14609H01L27/14643H04N5/3575H04N5/365H04N5/374H04N5/3745H04N5/378
    • An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
    • MOS型固态成像装置包括:通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域,沿着成像区域的行方向布置的多个垂直地址线,以选择行 要被寻址的单位单元,沿着成像区域的列方向布置的多条垂直信号线,以从每列中的单位单元读出信号;多个负载晶体管,每个连接到每个垂直信号的一端 线,以及多个水平选择晶体管,每个连接到每个垂直信号线的另一端。 在该装置中,每个单位单元包括用作光电转换部分的光电二极管,具有栅极的放大晶体管,来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器,以及与地址电容器并联连接的复位晶体管。
    • 43. 发明授权
    • Solid-state image device including charge-coupled devices having
improved electrode structure
    • 固态图像器件包括具有改进的电极结构的电荷耦合器件
    • US5428231A
    • 1995-06-27
    • US269349
    • 1994-06-30
    • Nagataka TanakaYoshiyuki MatsunagaMichio SasakiHirofumi YamashitaNobuo Nakamura
    • Nagataka TanakaYoshiyuki MatsunagaMichio SasakiHirofumi YamashitaNobuo Nakamura
    • H01L21/28H01L27/148H01L29/423H01L29/78H01L27/14H01L31/00
    • H01L29/42396H01L27/14831
    • A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
    • 固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分,用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。 水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。 垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。 水平CCD的转移电极具有重叠的双层电极结构,其包括交替排列的电极,其通过对第一多晶硅膜进行构图而形成,并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。 水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。