专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06200726B1 Optimization of space width for hybrid photoresist 失效
标题翻译：混合光刻胶的空间宽度优化
公开(公告)号：US06200726B1
公开(公告)日：2001-03-13
申请号：US09170756
申请日：1998-10-13
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
IPC分类号： G03C173
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085 , H01L28/82 , Y10S430/106 , Y10S430/115 , Y10S430/128
摘要： A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid. A method for optimizing space width in a hybrid photo resist includes the steps of: 1) selecting a desired space width; 2) selecting at least one photoacid generator (PAG), wherein at least two photoacids will be produced upon exposure to actinic energy in relative proportions sufficient to produce the desired space width in the hybrid photo resist; and 3) forming a hybrid photo resist composition comprising the at least one PAG. The step of selecting at least one PAG may include first determining the space width produced alone by each photoacid in a group of candidate photoacids and then selecting the photoacids and corresponding at least one PAG that will produce the desired space width.
摘要翻译：光致抗蚀剂组合物含有至少一种光致酸发生剂（PAG），其中当光致抗蚀剂暴露于光化能时，产生至少两种光酸，并且其中光致抗蚀剂能产生杂化响应。在混合抗蚀剂中提供两种光酸的产生的功能是通过改变混合空间宽度来优化混合抗蚀剂的使用。至少两种光酸在催化至少一种混合反应机制方面的有效性可能不同。特别地，一种光致酸可以是较弱的酸，而另一种可能是较强的酸，其中在较弱酸的酸解离常数（Ka）和较强酸之间存在至少四个数量级的差异。一种用于优化混合光刻胶中的空间宽度的方法包括以下步骤：1）选择期望的空间宽度; 2）选择至少一种光致酸产生剂（PAG），其中当以相对比例暴露于足以产生混合光致抗蚀剂中所需空间宽度的光化能时，将产生至少两种光酸; 和3）形成包含所述至少一种PAG的混合光刻胶组合物。选择至少一个PAG的步骤可以包括首先确定由一组候选光酸中的每个光酸酸单独产生的空间宽度，然后选择将产生所需空间宽度的光酸和相应的至少一个PAG。

42. 发明申请

US20120214099A1 PHOTORESIST COMPOSITIONS 有权
标题翻译：光电组合物
公开(公告)号：US20120214099A1
公开(公告)日：2012-08-23
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/016 , G03F7/008 , G03F7/027
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：一个组成组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏碱产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-羟乙基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

43. 发明申请

US20110111345A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 有权
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：US20110111345A1
公开(公告)日：2011-05-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

44. 发明申请

US20090176174A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS 有权
标题翻译：多次曝光光刻方法和光电复合材料
公开(公告)号：US20090176174A1
公开(公告)日：2009-07-09
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

45. 发明授权

US08999624B2 Developable bottom antireflective coating composition and pattern forming method using thereof 有权
标题翻译：可开发的底部抗反射涂料组合物及其图案形成方法
公开(公告)号：US08999624B2
公开(公告)日：2015-04-07
申请号：US13537177
申请日：2012-06-29
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/039 , H01L21/027 , C08L33/06 , C08F220/26 , C08L33/16
CPC分类号： G03F7/11 , C08F220/26 , C08L33/066 , C08L33/16 , C08L2312/00 , C09D133/066 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/30 , G03F7/322 , G03F7/40 , H01L21/0274 , H01L21/0276 , H01L21/265 , C08L2205/025
摘要： The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
摘要翻译：本发明涉及一种可显影底部抗反射涂层（BARC）组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分，含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物，含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。第一和第二发色团部分各自吸收波长从100nm到400nm的光。在图案形成方法中，在BARC组合物的BARC层上形成光致抗蚀剂层。曝光后，通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

46. 发明授权

US06203965B1 Photoresist comprising blends of photoacid generators 有权
标题翻译：光致抗蚀剂包含光致酸发生剂的混合物
公开(公告)号：US06203965B1
公开(公告)日：2001-03-20
申请号：US09552211
申请日：2000-04-19
申请人： James F. Cameron , James Michael Mori , George W. Orsula , James W. Thackeray , Wu-Song Huang , Ronald A. DellaGuardia , Kuang-Jung Chen , Hiroshi Ito , Wayne M. Moreau
发明人： James F. Cameron , James Michael Mori , George W. Orsula , James W. Thackeray , Wu-Song Huang , Ronald A. DellaGuardia , Kuang-Jung Chen , Hiroshi Ito , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/122
摘要： The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.
摘要翻译：本发明提供了含有树脂粘合剂和光致酸发生剂的混合物的新的光致抗蚀剂组合物。本发明的光酸发生剂共混物产生酸强度和/或尺寸不同的光酸。特定组合物包含具有羟基苯乙烯，苯乙烯和丙烯酸叔丁酯与光酸产生剂二（4-叔丁基苯基）鏻樟脑磺酸盐和邻 - 三氟甲基苯磺酸二（4-叔丁基苯基）碘的单元的三元共聚物。

47. 发明授权

US08871596B2 Method of multiple patterning to form semiconductor devices 有权
标题翻译：多重图形化形成半导体器件的方法
公开(公告)号：US08871596B2
公开(公告)日：2014-10-28
申请号：US13555240
申请日：2012-07-23
申请人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
发明人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
IPC分类号： H01L21/31
CPC分类号： H01L21/0274 , H01L21/26586 , H01L21/3081 , H01L21/76229 , H01L21/76283 , H01L29/517 , H01L29/66575 , H01L29/78
摘要： A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.
摘要翻译：使用单个掩模和混合光致抗蚀剂形成半导体器件的不同结构的方法。该方法包括：在半导体衬底上施加第一光致抗蚀剂层; 使用光掩模图案化第一光致抗蚀剂层以形成第一图案化光致抗蚀剂层; 使用所述第一图案化的光致抗蚀剂层形成半导体器件的第一结构; 去除第一图案化光致抗蚀剂层; 在所述半导体衬底上施加第二光致抗蚀剂层; 使用光掩模图案化第二光致抗蚀剂层以形成第二图案化光致抗蚀剂层; 使用所述第二图案化的光致抗蚀剂层形成半导体器件的第二结构; 去除第二图案化光致抗蚀剂层; 并且其中所述第一或第二光致抗蚀剂层是包含混合光致抗蚀剂的混合光致抗蚀剂层。

48. 发明授权

US06365321B1 Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations 有权
标题翻译：用于化学增强正性抗蚀剂配方的羟基苯乙烯聚合物的共混物
公开(公告)号：US06365321B1
公开(公告)日：2002-04-02
申请号：US09291389
申请日：1999-04-13
申请人： Kuang-Jung Chen , Ronald Anthony DellaGuardia , Hiroshi Ito , George Michael Jordhamo , Ahmad Dauod Katnani
发明人： Kuang-Jung Chen , Ronald Anthony DellaGuardia , Hiroshi Ito , George Michael Jordhamo , Ahmad Dauod Katnani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A photoresist binder composition comprising a homogeneous blend of (i) a hydroxystyrene copolymer comprising a first monomer that is optionally substituted hydroxystyrene and a second monomer containing an acid labile group, preferably pendant to the polymer backbone, and (ii) and a phenolic polymer, that is optionally partially or wholly protected, such as polyhydroxystyrene, poly(hydroxystyrene-co-styrene), poly(hydroxystyrene-co-styrene-co-t-butyl acrylate), novolac, and the like. Also provided is a lithographic resist composition comprising the homogeneous blend of the photoresist binder composition, and a radiation-sensitive acid generator which generates an acid upon exposure to radiation, and a process for using the resist composition to generate resist images on a substrate, such as in the manufacture of integrated circuits or the like.
摘要翻译：一种光致抗蚀剂粘合剂组合物，其包含（i）包含任选取代的羟基苯乙烯的第一单体和含有酸不稳定基团的第二单体的羟基苯乙烯共聚物的均匀共混物，优选垂饰于聚合物主链，和（ii）和酚类聚合物，任选地部分或全部保护，例如聚羟基苯乙烯，聚（羟基苯乙烯 - 共 - 苯乙烯），聚（羟基苯乙烯 - 共 - 苯乙烯 - 丙烯酸叔丁酯），酚醛清漆等。还提供了一种平版印刷抗蚀剂组合物，其包含光致抗蚀剂粘合剂组合物和在暴露于辐射时产生酸的辐射敏感酸产生剂的均匀混合物，以及使用抗蚀剂组合物在基材上产生抗蚀剂图像的方法，如在集成电路等的制造中。

49. 发明授权

US6132644A Energy sensitive electrically conductive admixtures 失效
标题翻译：能量敏感的导电外加剂
公开(公告)号：US6132644A
公开(公告)日：2000-10-17
申请号：US086238
申请日：1998-05-28
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B1/12 , H01L23/532 , H01B1/20
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译：本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。该组合物也可用于扫描电子测量和静电消散的应用中。

50. 发明授权

US09142798B2 Package of environmental sensitive electronic element 有权
标题翻译：环保敏感电子元件包装
公开(公告)号：US09142798B2
公开(公告)日：2015-09-22
申请号：US13354298
申请日：2012-01-19
申请人： Kuang-Jung Chen , Jian-Lin Wu , Shu-Tang Yeh
发明人： Kuang-Jung Chen , Jian-Lin Wu , Shu-Tang Yeh
IPC分类号： H01L33/56 , H01L51/52
CPC分类号： H01L51/5256
摘要： A package of an environmental sensitive electronic element including a first substrate, a second substrate, an environmental sensitive electronic element, a flexible structure layer and a filler layer is provided. The environmental sensitive electronic element is disposed on the first substrate and located between the first substrate and the second substrate. The environmental sensitive electronic element includes an anode layer, a hole injecting layer, a hole transporting layer, an organic light emitting layer, a cathode layer and an electron injection layer. The flexible structure layer is disposed on the environmental sensitive electronic element and includes a soft layer, a trapping layer and a protective layer. The material of the trapping layer is the same as the material of the electron injection layer. The filler layer is disposed between the first substrate and the second substrate and encapsulates the environmental sensitive electronic element and the flexible structure layer.
摘要翻译：提供一种包括第一基板，第二基板，环境敏感电子元件，柔性结构层和填充层的环境敏感电子元件的封装。环境敏感电子元件设置在第一基板上并且位于第一基板和第二基板之间。环境敏感电子元件包括阳极层，空穴注入层，空穴传输层，有机发光层，阴极层和电子注入层。柔性结构层设置在环境敏感电子元件上，并且包括软层，捕获层和保护层。捕获层的材料与电子注入层的材料相同。填充层设置在第一基板和第二基板之间，并且封装环境敏感的电子元件和柔性结构层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式