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41. 发明授权

US08350091B2 Potassium fluoride dispersion and process for producing fluorine-containing organic compound using the same 失效
标题翻译：氟化钾分散体及使用其的含氟有机化合物的制造方法
公开(公告)号：US08350091B2
公开(公告)日：2013-01-08
申请号：US13341069
申请日：2011-12-30
申请人： Koji Hagiya , Kazuaki Sasaki
发明人： Koji Hagiya , Kazuaki Sasaki
IPC分类号： C07C45/90
CPC分类号： C07B39/00 , C01D3/02 , C07C17/208 , C07C67/14 , C07C201/12 , C07C22/08 , C07C69/76 , C07C205/12
摘要： A potassium fluoride dispersion essentially consisting of potassium fluoride and an aprotic organic solvent having a boiling point higher than that of methanol, which is obtainable by mixing a mixture containing potassium fluoride and 5 to 50 parts by weight of methanol per 1 part by weight of potassium fluoride with the aprotic organic solvent followed by concentrating the obtained mixture, and a process for producing a fluorine-containing organic compound comprising contacting an organic compound having at least one group capable of being substituted nucleophilically with a fluorine atom with the potassium fluoride dispersion.
摘要翻译：基本上由氟化钾和沸点高于甲醇的非质子有机溶剂组成的氟化钾分散液，其通过将含有氟化钾的混合物和5至50重量份的甲醇混合，每1重量份的钾用非质子有机溶剂氟化，然后浓缩所得混合物，以及含氟有机化合物的制备方法，包括使具有至少一个能够被氟原子取代的基团的有机化合物与氟原子分散体接触。

42. 发明申请

US20120097891A1 POTASSIUM FLUORIDE DISPERSION AND PROCESS FOR PRODUCING FLUORINE-CONTAINING ORGANIC COMPOUND USING THE SAME 失效
标题翻译：氟代氟化物分散体及其生产含有氟的有机化合物的方法
公开(公告)号：US20120097891A1
公开(公告)日：2012-04-26
申请号：US13341069
申请日：2011-12-30
申请人： KOJI HAGIYA , Kazuaki Sasaki
发明人： KOJI HAGIYA , Kazuaki Sasaki
IPC分类号： C09K3/00
CPC分类号： C07B39/00 , C01D3/02 , C07C17/208 , C07C67/14 , C07C201/12 , C07C22/08 , C07C69/76 , C07C205/12
摘要： A potassium fluoride dispersion essentially consisting of potassium fluoride and an aprotic organic solvent having a boiling point higher than that of methanol, which is obtainable by mixing a mixture containing potassium fluoride and 5 to 50 parts by weight of methanol per 1 part by weight of potassium fluoride with the aprotic organic solvent followed by concentrating the obtained mixture, and a process for producing a fluorine-containing organic compound comprising contacting an organic compound having at least one group capable of being substituted nucleophilically with a fluorine atom with the potassium fluoride dispersion.
摘要翻译：基本上由氟化钾和沸点高于甲醇的非质子有机溶剂组成的氟化钾分散液，其通过将含有氟化钾的混合物和5至50重量份的甲醇混合，每1重量份钾用非质子有机溶剂氟化，然后浓缩所得混合物，以及含氟有机化合物的制备方法，包括使具有至少一个能够被氟原子取代的基团的有机化合物与氟原子分散体接触。

43. 发明申请

US20100234597A1 PROCESS FOR PRODUCING IMIDAZO[1,2-b]PYRIDAZINE COMPOUND 有权
标题翻译：制备咪唑并[1,2-b]吡啶化合物的方法
公开(公告)号：US20100234597A1
公开(公告)日：2010-09-16
申请号：US12064832
申请日：2006-08-22
申请人： Ichiro Komoto , Kazuaki Sasaki , Tomohiko Gotou
发明人： Ichiro Komoto , Kazuaki Sasaki , Tomohiko Gotou
IPC分类号： C07D487/04
CPC分类号： C07D487/04
摘要： A process for producing an imidazo[1,2-b]pyridazine compound represented by the formula (2): wherein R1, R2 and R3 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group which may be substituted with a halogen atom or atoms, an alkenyl group which may be substituted with a halogen atom or atoms, or an alkoxy group which may be substituted with a halogen atom or atoms, which comprises reacting a 2,3-dihydropyridazine compound represented by the formula (1): wherein R1, R2 and R3 are the same meanings as defined above, with a phosphorus oxyhalide in the presence of an organic base which is in an amount of 0.5 mole or more relative to 1 mole of the 2,3-dihydropyridazine compound and 1 mole or less relative to 1 mole of the phosphorus oxyhalide.
摘要翻译：一种制备由式（2）表示的咪唑并[1,2-b]哒嗪化合物的方法：其中R 1，R 2和R 3相同或不同，各自表示氢原子，卤素原子，可以被卤原子或原子取代，可被卤原子或原子取代的烯基，或可以被卤原子或原子取代的烷氧基，其包括使由2,3-二氢哒嗪化合物式（1）：其中R1，R2和R3与上述定义相同，在有机碱的存在下，相对于1摩尔2,3的量，为0.5摩尔以上 - 二氢哒嗪化合物，相对于1摩尔的卤氧化磷为1摩尔以下。

44. 发明申请

US20060038186A1 Light-emitting diode and its manufacturing method 有权
公开(公告)号：US20060038186A1
公开(公告)日：2006-02-23
申请号：US11256001
申请日：2005-10-24
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/14 , Y10S438/937
摘要： It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.

45. 发明授权

US06268525B1 Process for producing optically active chrysanthemic acid 有权
标题翻译：光学活性菊酸的制备方法
公开(公告)号：US06268525B1
公开(公告)日：2001-07-31
申请号：US09238503
申请日：1999-01-27
申请人： Makoto Itagaki , Goufu Suzukamo , Kazuaki Sasaki , Kunihiko Fujita
发明人： Makoto Itagaki , Goufu Suzukamo , Kazuaki Sasaki , Kunihiko Fujita
IPC分类号： C07B5500
CPC分类号： C07C51/487 , Y02P20/582 , C07C61/37
摘要： The present invention provides an advantageous method for producing an optically active chrysanthemic acid. Disclosed is a method for producing an optically active chrysanthemic acid whose trans isomer ratio and optical purity are improved, which comprises reacting chrysanthemic acid having a trans isomer ratio of not less than 50% and an optical purity of not less than 10% e.e. with an optically active organic amine to optically resolve said chrysanthemic acid.
摘要翻译：本发明提供了制备光学活性菊酸的有利方法。公开了一种旋光异构体比例和光学纯度提高的光学活性菊酸的制造方法，其特征在于，使反异构体比率不低于50％的菊酸与光学纯度不小于10％e.e。与光学活性有机胺一起旋光分解所述菊酸。

46. 发明授权

US06246078B1 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US06246078B1
公开(公告)日：2001-06-12
申请号：US09015052
申请日：1998-01-28
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/0066 , H01L33/14 , H01L33/145
摘要： The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not containing Al; and a current diffusion layer having the second conductivity type and being made of a compound semiconductor not containing Al.
摘要翻译：本发明的半导体发光元件包括：具有第一导电类型的化合物半导体衬底; 发光层; 具有第二导电类型且不含Al的化合物半导体界面层; 以及具有第二导电类型并由不含有Al的化合物半导体制成的电流扩散层。

47. 发明授权

US5571750A Method for producing a semiconductor laser device 失效
公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

48. 发明授权

US5404031A Semiconductor light emitting device with current confining layer 失效
标题翻译：具有电流限制层的半导体发光器件
公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
申请人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
发明人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译：公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

49. 发明授权

US4977568A Semiconductor laser device 失效
公开(公告)号：US4977568A
公开(公告)日：1990-12-11
申请号：US286682
申请日：1988-12-19
申请人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
发明人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/12 , H01S5/223 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer.

50. 发明授权

US4860299A Semiconductor laser device 失效
公开(公告)号：US4860299A
公开(公告)日：1989-08-22
申请号：US195069
申请日：1988-05-17
申请人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
发明人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2232 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

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