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41. 发明授权

US5708287A Power semiconductor device having an active layer 失效
标题翻译：功率半导体器件具有有源层
公开(公告)号：US5708287A
公开(公告)日：1998-01-13
申请号：US564449
申请日：1995-11-29
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
IPC分类号： H01L21/84 , H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/84 , H01L27/1203
摘要： An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.+ -type diffusion layer serves as an emitter region.
摘要翻译：通过氧化硅膜在硅衬底上形成厚度为6μm以下的n型硅有源层。在有源层中形成具有低耐压的npn双极晶体管和具有高耐压的IGBT。两个器件通过沟槽彼此绝缘和隔离。双极晶体管在有源层的表面形成有n型阱层。 p型阱层形成于n型阱层的表面。 p型阱层下面的n型阱层的厚度设定为1μm以上。在n型阱层的表面形成第一n +型扩散层。在p型阱层的表面形成p +型扩散层和第n +型扩散层。 n型阱层和第一n +型扩散层用作集电极区域。 p型阱层和p +型扩散层用作基极区域。第二n +型扩散层用作发射极区域。

42. 发明授权

US5424507A Controlling working gas flow rate and arc current level in plasma arc cutting machine 失效
标题翻译：控制等离子弧切割机的工作气体流量和电弧电流
公开(公告)号：US5424507A
公开(公告)日：1995-06-13
申请号：US230597
申请日：1994-04-21
申请人： Yoshihiro Yamaguchi
发明人： Yoshihiro Yamaguchi
IPC分类号： B23K10/00 , B23K9/00
CPC分类号： B23K10/006
摘要： A plasma arc cutting machine which utilizes oxygen as a working gas is controlled to provide: a long electrode life without serious electrode wear even if the starting operation of the arc is repeated frequently; a smooth transition from a pilot arc to a main arc even when a thin plate is cut; and a low noise characteristic. A first stop valve (4) is connected in parallel with a serially connected second stop valve (7) and a gas flow regulating means (6) between a supply of working gas and a plasma torch (1). In response to a start signal S.sub.T, the second stop valve (7) is opened so as to supply the working gas at a small flow rate Q.sub.P to the plasma torch (1) via the gas flow regulating means (6). After a pilot arc is started, the first stop valve (4) is gradually opened so as to gradually increase the flow rate of the working gas from the small flow rate Q.sub.P up to a normal flow rate Q.sub.M, and at the same time, the pilot current is gradually increased from an initial pilot current level I.sub.S to a pilot current level I.sub.P, corresponding to the gradual increase in the flow rate of the working gas up to the normal flow rate Q.sub.M. In response to a stop signal S.sub.P, the arc current is gradually reduced from the cutting current level I.sub.M to a lower level I.sub.D at which the main arc (13) is extinguished.
摘要翻译：控制利用氧作为工作气体的等离子体电弧切割机，即使电弧的起动操作频繁地重复，电极寿命长也不会严重; 即使在切割薄板的情况下，从导电弧到主弧的平滑过渡; 和低噪声特性。第一截止阀（4）与串联连接的第二截止阀（7）和气体流量调节装置（6）并联连接在工作气体和等离子体焰炬（1）之间。响应于启动信号ST，第二截止阀（7）打开，以便通过气流调节装置（6）将小流量QP的工作气体供应到等离子体焰炬（1）。在开始引弧之后，第一截止阀（4）逐渐打开，从而将工作气体的流量从小流量QP逐渐增加到正常流量QM，同时，引导电流从初始引导电流电平IS逐渐增加到引导电流电平IP，对应于工作气体的流量逐渐增加直到正常流量QM。响应于停止信号SP，电弧电流从切割电流电平IM逐渐减小到主电弧（13）熄灭的较低电平ID。

43. 发明授权

US5237186A Conductivity-modulation metal oxide field effect transistor with single gate structure 失效
标题翻译：具有单栅极结构的电导率调制金属氧化物场效应晶体管
公开(公告)号：US5237186A
公开(公告)日：1993-08-17
申请号：US823834
申请日：1992-01-21
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/7455 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L2924/0002
摘要： There is disclosed a single-gate type conductivity-modulation field effect transistor having a semiconductive substrate, a base layer, and a source layer formed in the base layer. A source electrode is provided on a surface of the substrate, for electrically shorting the base layer with the source layer. A drain layer is provided in the substrate surface. A drain electrode is formed on the substrate surface to be in contact with the drain layer. A gate electrode is insulatively provided above the substrate surface, for covering a certain surface portion of the base layer which is positioned between the substrate and the source layer to define a channel region below the gate electrode. A lightly doped semiconductor diffusion layer is formed in the substrate surface so as to overlap said base layer and said drain layer. The diffusion layer having an impurity density which is varied continuously through the thickness of the diffusion layer.
摘要翻译：公开了具有形成在基底层中的半导体基底，基底层和源极层的单栅极型导电调制场效应晶体管。源电极设置在基板的表面上，用于使源层与源层电短路。漏极层设置在衬底表面中。漏极电极形成在衬底表面上以与漏层接触。栅极电极被绝缘地设置在衬底表面上方，用于覆盖位于衬底和源极层之间的基底层的特定表面部分，以限定栅电极下方的沟道区。在衬底表面中形成轻掺杂的半导体扩散层，以便与所述基底层和所述漏极层重叠。扩散层的杂质密度通过扩散层的厚度连续变化。

44. 发明授权

US5168333A Conductivity-modulation metal oxide semiconductor field effect transistor 失效
标题翻译：电导率调制金属氧化物半导体场效应晶体管
公开(公告)号：US5168333A
公开(公告)日：1992-12-01
申请号：US662517
申请日：1991-02-28
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7455
摘要： A semiconductor device including a semiconductive substrate having first and second opposite surfaces; a thyristor formed on the substrate and including a base layer formed in the first surface of the substrate, a first emitter layer formed in the base layer, a conductive layer electrically connected to the emitter layer to serve as a cathode electrode, a first gate electrode connected to the base layer, a second emitter layer formed in the second surface of the substrate, a drain layer formed in the second emitter layer, a conductive layer for electrically connecting the second emitter layer with said drain layer and for serving as an anode electrode of said thyristor. A metal oxide semiconductor field effect transistor is provided to accelerate the flow of carriers in said thyristor to the anode electrode to turn off said thyristor. The metal oxide semiconductor field effect transistor has a conductive layer serving as a second gate electrode insulatively disposed above the second surface to cover a layer portion of the second emitter layer which is defined between the substrate and the drain layer.
摘要翻译：一种半导体器件，包括具有第一和第二相对表面的半导体衬底; 形成在基板上的晶闸管，包括形成在基板的第一表面中的基底层，在基底层中形成的第一发射极层，与发射极层电连接以用作阴极的导电层，第一栅电极连接到基极层，形成在基板的第二表面中的第二发射极层，形成在第二发射极层中的漏极层，用于将第二发射极层与所述漏极层电连接并用作阳极电极的导电层的晶闸管。提供金属氧化物半导体场效应晶体管，以加速所述晶闸管中的载流子流向阳极电极，以使所述晶闸管截止。金属氧化物半导体场效应晶体管具有绝缘地设置在第二表面之上的第二栅电极的导电层，以覆盖限定在衬底和漏层之间的第二发射极层的层部分。

45. 发明授权

US5086332A Planar semiconductor device having high breakdown voltage 失效
标题翻译：具有高击穿电压的平面半导体器件
公开(公告)号：US5086332A
公开(公告)日：1992-02-04
申请号：US415400
申请日：1989-09-27
申请人： Akio Nakagawa , Kiminori Watanabe , Yutaka Koshino , Yoshihiro Yamaguchi , Yoshiro Baba
发明人： Akio Nakagawa , Kiminori Watanabe , Yutaka Koshino , Yoshihiro Yamaguchi , Yoshiro Baba
IPC分类号： H01L29/06 , H01L29/40 , H01L29/78 , H01L29/861
CPC分类号： H01L29/405 , H01L29/0615 , H01L29/408 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/0692 , H01L29/0847 , H01L29/1045 , H01L29/41758
摘要： A planar semiconductor device having a high breakdown voltage includes a semiconductor layer of a first conductivity type and a first semiconductor region of a second conductivity type selectively formed, together with the semiconductor layer, in the surface of the semiconductor layer forming a pn junction. The first semiconductor region is formed to have an impurity concentration higher than that of the semiconductor layer and therefore a resistivity higher than that of the semiconductor layer. A second semiconductor region of the second conductivity type having an impurity concentration lower than that of the first semiconductor region, is formed around and in contact with the first semiconductor region and together with the semiconductor layer constitutes a pn junction. A high resistance film is formed at least over the first semiconductor region and the second semiconductor region. A voltage is applied across the high resistance film to create a uniform electric field in the high resistance film.
摘要翻译：具有高击穿电压的平面半导体器件包括在形成pn结的半导体层的表面中选择性地与半导体层一起形成第一导电类型的半导体层和第二导电类型的第一半导体区域。第一半导体区域形成为具有比半导体层高的杂质浓度，因此电阻率高于半导体层的电阻率。具有低于第一半导体区域的杂质浓度的第二导电类型的第二半导体区域形成在第一半导体区域周围并与第一半导体区域接触，并与半导体层一起构成pn结。至少在第一半导体区域和第二半导体区域上形成高电阻膜。在高电阻膜上施加电压以在高电阻膜中产生均匀的电场。

46. 发明授权

US4928155A Lateral conductivity modulated MOSFET 失效
标题翻译：横向电导率调制MOSFET
公开(公告)号：US4928155A
公开(公告)日：1990-05-22
申请号：US205365
申请日：1988-06-10
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

47. 发明授权

US4881120A Conductive modulated MOSFET 失效
标题翻译：导电调制MOSFET
公开(公告)号：US4881120A
公开(公告)日：1989-11-14
申请号：US116357
申请日：1987-11-04
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
摘要翻译：一种电导率调制MOSFET，具有第一导电类型的半导体衬底，形成在半导体衬底上并且具有高电阻的第二导电类型的半导体层，形成在半导体层中的第一导电类型的基极层，源极形成在基底层中的第二导电类型的层，形成在形成在沟道区上的栅极绝缘膜上的栅电极，沟道区形成在半导体层和源极层之间的基底层的表面中，欧姆接触源极层和基极层的源电极以及形成在半导体衬底的与半导体层相反的表面上的漏电极，其特征在于，导电调制MOSFET的饱和电流小于闭锁电流当预定的栅极电压施加到栅电极时。

48. 发明授权

US4878957A Dielectrically isolated semiconductor substrate 失效
标题翻译：绝缘半导体衬底
公开(公告)号：US4878957A
公开(公告)日：1989-11-07
申请号：US330492
申请日：1989-03-30
申请人： Yoshihiro Yamaguchi , Kiminori Watanabe , Akio Nakagawa , Kazuyoshi Furukama , Kiyoshi Fukuda , Katsujiro Tanzawa
发明人： Yoshihiro Yamaguchi , Kiminori Watanabe , Akio Nakagawa , Kazuyoshi Furukama , Kiyoshi Fukuda , Katsujiro Tanzawa
IPC分类号： H01L21/02 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/159
摘要： A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such a manner that an insulative layer is sandwiched therebetween. The first semiconductive layer is a first silicon layer having a (100) or (110) crystal surface orientation, while the second semiconductive layer is a second silicon layer having a (111) crystal surface orientation. Thereafter, a peripheral portion of the resultant substrate is removed, and a substrate of a slightly smaller size is obtained which is provided with an additionally formed new orientation flat.

49. 发明授权

US4074644A Feed mechanism for sewing machine 失效
标题翻译：缝纫机进料机构
公开(公告)号：US4074644A
公开(公告)日：1978-02-21
申请号：US744315
申请日：1976-11-23
申请人： Kimikazu Matsuda , Yoshihiro Yamaguchi
发明人： Kimikazu Matsuda , Yoshihiro Yamaguchi
IPC分类号： D05B27/02
CPC分类号： D05B27/02
摘要： Mechanism in a sewing machine for actuating the feed dog includes a pivoted actuating arm carrying on its distal end a feed dog support which is rockable about a vertical axis and also is slidable vertically. The feed dog support includes an arm which cooperates with an arcuate guideway which controls the attitude of the feed dog support so that the feed dog is maintained in proper work feeding attitude in its horizontal movement. Additional means effect vertical movement of the feed dog support in synchronism with the horizontal movement.
摘要翻译：用于致动进给狗的缝纫机中的机构包括枢转的致动臂，其在其远端上承载着可绕垂直轴线摇摆并且也可垂直滑动的进给爪支撑件。馈线支架包括一个与弓形导轨配合的臂，该弓形导轨控制馈线支架的姿态，使得馈线在其水平运动中保持适当的工作进给姿态。额外的方式是与水平运动同步地影响馈线支架的垂直运动。

50. 发明授权

US4042380A Grain refined free-machining steel 失效
标题翻译：颗粒精炼自由加工钢
公开(公告)号：US4042380A
公开(公告)日：1977-08-16
申请号：US686576
申请日：1976-05-14
申请人： Yoshihiro Yamaguchi , Takashi Shimohata , Sodai Kita , Yoshihide Fuchino , Tsugio Kaneda , Masashi Kawauchi , Sadayashi Furusawa , Shuzi Iwata
发明人： Yoshihiro Yamaguchi , Takashi Shimohata , Sodai Kita , Yoshihide Fuchino , Tsugio Kaneda , Masashi Kawauchi , Sadayashi Furusawa , Shuzi Iwata
IPC分类号： C22C38/00 , C22C38/14 , C22C38/60
CPC分类号： C22C38/14 , C22C38/60
摘要： This invention relates to a free-cutting steel that is used as a material for mechanical construction members be manufactured by machining as well as cold working.There has been proposed resulfurized free-machining steels containing large amounts of sulfur to improve the machinability, as well as resulfurized free-machining steels containing sulfur and zirconium to improve machinability and cold workability. None of these steels, however, simultaneously satisfy the machinability cold workability and mechanical properties required of steels used for the construction of machines.The present invention provides a steel comprising 0.08 to 0.6% of carbon, 0.35% or less of silicon, 0.3 to 1.5% of manganese, 0.04 to 0.15% of sulfur, 0.010 to 0.05% of aluminum, 0.01 to 0.08% of niobium, 0.008% or less of oxygen, 0.008% or less of nitrogen, wherein the amount of zirconium being 0.2 to 1.2 in terms of (Zr% -2.9x 0% -6.5x N%)/S%, the steel has a refined grain size and controlled sulfide morphology, and exhibits improved machinability, cold workability and mechanical properties.
摘要翻译：本发明涉及一种用作机械构件的材料的自由切削钢，其通过机加工和冷加工制造。

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