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41. 发明授权

US09989687B2 Wave plate having consistent birefringence properties across the visible spectrum and manufacturing method for same 有权
公开(公告)号：US09989687B2
公开(公告)日：2018-06-05
申请号：US13699830
申请日：2010-05-25
申请人： Akio Takada , Takatoshi Yamada , Nobuyuki Koike , Masatoshi Sasaki , Kazuyuki Shibuya
发明人： Akio Takada , Takatoshi Yamada , Nobuyuki Koike , Masatoshi Sasaki , Kazuyuki Shibuya
IPC分类号： G02B5/30 , C23C16/40
CPC分类号： G02B5/3083 , C23C16/40 , G02B5/30 , G02B5/3025
摘要： A wave plate capable of increasing a birefringence quantity and being made into a thin film, and a method of manufacturing the wave plate. The wave plate includes a substrate, whereon convex portions and concave portions are formed with a period less than or equal to the wavelength of light that is used therewith, columnar portions, wherein fine grains of a dielectric material are layered by oblique vapor deposition of a dielectric material from two directions, in a columnar shape on the convex portions in the vertical direction relative to the surface of the substrate, and interstices that are located on the concave portions and disposed between the columnar portions. Using birefringence from the fine grains of the dielectric material and birefringence from the concave/convex portions of the substrate allows increasing the birefringence quantity and making a thin film.

42. 发明授权

US08735907B2 Ohmic electrode for use in a semiconductor diamond device 有权
标题翻译：用于半导体金刚石器件的欧姆电极
公开(公告)号：US08735907B2
公开(公告)日：2014-05-27
申请号：US13386067
申请日：2010-07-21
申请人： Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
发明人： Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
IPC分类号： H01L29/15 , H01L23/48 , H01L21/00 , H01L21/44
CPC分类号： H01L21/043 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.
摘要翻译：在半导体金刚石器件中，提供了化学和热稳定的欧姆电极，具有优异的低接触电阻和高耐热性。通过溅射工艺等在半导体金刚石上形成含有Ni和Cr的镍铬合金或镍铬化合物，例如化学和热稳定的Ni6Cr2或Ni72Cr18Si10，从而获得半导体金刚石器件具有优良的欧姆电极。如果在形成镍铬合金或化合物之后进行热处理，则其性能得到改善。

43. 发明申请

US20130135727A1 WAVE PLATE AND WAVE PLATE MANUFACTURING METHOD 有权
标题翻译：波片和波片制造方法
公开(公告)号：US20130135727A1
公开(公告)日：2013-05-30
申请号：US13699830
申请日：2010-05-25
申请人： Akio Takada , Takatoshi Yamada , Nobuyuki Koike , Masatoshi Sasaki , Kazuyuki Shibuya
发明人： Akio Takada , Takatoshi Yamada , Nobuyuki Koike , Masatoshi Sasaki , Kazuyuki Shibuya
IPC分类号： G02B5/30 , C23C16/40
CPC分类号： G02B5/3083 , C23C16/40 , G02B5/30 , G02B5/3025
摘要： A wave plate capable of increasing a birefringence quantity and being made into a thin film, and a method of manufacturing the wave plate. The wave plate includes a substrate, whereon convex portions and concave portions are formed with a period less than or equal to the wavelength of light that is used therewith, columnar portions, wherein fine grains of a dielectric material are layered by oblique vapor deposition of a dielectric material from two directions, in a columnar shape on the convex portions in the vertical direction relative to the surface of the substrate, and interstices that are located on the concave portions and disposed between the columnar portions. Using birefringence from the fine grains of the dielectric material and birefringence from the concave/convex portions of the substrate allows increasing the birefringence quantity and making a thin film.
摘要翻译：能够增加双折射量并制成薄膜的波片及其制造方法。波片包括基板，其中凸部和凹部形成有小于或等于其使用的光的波长的周期，柱状部分，其中电介质材料的细晶粒通过倾斜气相沉积从相对于基板的表面在垂直方向的凸部上的柱状形状的两个方向的介电材料和位于凹部上并配置在柱状部之间的间隙。使用来自电介质材料的细晶粒的双折射和来自基板的凹/凸部分的双折射可以增加双折射量并制成薄膜。

44. 发明申请

US20130052119A1 METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE CARBON FILM, AND TRANSPARENT CONDUCTIVE CARBON FILM 审中-公开
标题翻译：透明导电碳膜的生产方法和透明导电碳膜
公开(公告)号：US20130052119A1
公开(公告)日：2013-02-28
申请号：US13581361
申请日：2011-03-17
申请人： Jaeho Kim , Masatou Ishihara , Yoshinori Koga , Kazuo Tsugawa , Masataka Hasegawa , Sumio Iijima , Takatoshi Yamada
发明人： Jaeho Kim , Masatou Ishihara , Yoshinori Koga , Kazuo Tsugawa , Masataka Hasegawa , Sumio Iijima , Takatoshi Yamada
IPC分类号： C23C16/511 , C01B31/00
CPC分类号： C23C16/511 , B82Y30/00 , B82Y40/00 , C01B32/188 , C23C16/26 , C23C16/545 , H01B1/04
摘要： An object of the present invention is to solve problems such as high temperature processing and long processing time, which are issues of formation of a graphene film by thermal CVD, thereby providing a technique of forming a transparent conductive carbon film using a crystalline carbon film formed at lower temperature within a short time using a graphene film, and the method of the present invention is characterized by setting the temperature of a base material to 500° C. or lower and the pressure to 50 Pa or less, and also depositing a transparent conductive carbon film on a surface of a base material by a microwave surface-wave plasma CVD method in a gas atmosphere in which an oxidation inhibitor as an additive gas for suppressing oxidation of the surface of the base material is added to a carbon-containing gas or a mixed a carbon-containing gas and an inert gas.
摘要翻译：本发明的目的是解决通过热CVD形成石墨烯膜的问题，例如高温处理和长处理时间等问题，从而提供使用形成的结晶性碳膜形成透明导电性碳膜的技术使用石墨烯膜在短时间内在较低的温度下进行，本发明的方法的特征在于将基材的温度设定在500℃以下，将压力设定为50Pa以下，并且还沉积透明通过微波表面波等离子体CVD法在基体材料的表面上形成导电性碳膜，在气体气氛中，将作为用于抑制基材表面的氧化的添加气体的氧化抑制剂添加到含碳气体中或混合的含碳气体和惰性气体。

45. 发明授权

US07960905B2 Diamond electron source having carbon-terminated structure 有权
标题翻译：具有碳末端结构的金刚石电子源
公开(公告)号：US07960905B2
公开(公告)日：2011-06-14
申请号：US11994065
申请日：2006-06-21
申请人： Takatoshi Yamada , Christoph Nebel , Shinichi Shikata
发明人： Takatoshi Yamada , Christoph Nebel , Shinichi Shikata
IPC分类号： H01J1/00
CPC分类号： H01J9/025 , H01J1/304
摘要： The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.
摘要翻译：本发明提供了可用于低电压可操作的冷阴极表面结构的稳定且优异的电子发射特性的金刚石电子源和用于制备金刚石电子源的方法。具体地说，具有碳末端结构的金刚石电子源具有由电极和金刚石膜构成的结构，并且当施加电压时，从金刚石膜发射电子或电子束。金刚石膜由具有碳末端结构的金刚石制成。本文还提供了制备金刚石电子源的方法。

46. 发明授权

US07715300B2 Diffraction element, objective lens unit, optical pickup and optical disc apparatus 失效
$Diffraction element, objective lens unit, optical pickup and optical disc apparatus$
标题翻译：衍射元件，物镜单元，光学拾取器和光盘装置
公开(公告)号：US07715300B2
公开(公告)日：2010-05-11
申请号：US11684133
申请日：2007-03-09
申请人： Satoshi Kawakita , Motoo Aiba , Kyu Kanno , Jin Sato , Takatoshi Yamada
发明人： Satoshi Kawakita , Motoo Aiba , Kyu Kanno , Jin Sato , Takatoshi Yamada
IPC分类号： G11B7/00
CPC分类号： G11B7/1374 , G02B5/1895 , G11B7/1353 , G11B2007/0006
摘要： A diffraction element for diffracting a particular wavelength of incident optical beam includes: a base section made from a first resin and provided with a predetermined diffraction pattern; and a cover section made from a second resin and covering the diffraction pattern, wherein a rate of change of refraction index of the first resin is substantially the same as a rate of change of refraction index of the second resin in a temperature range between a first temperature and a second temperature.
摘要翻译：用于衍射入射光束的特定波长的衍射元件包括：由第一树脂制成并具有预定衍射图案的基部; 以及由第二树脂制成并覆盖衍射图案的覆盖部分，其中第一树脂的折射率变化率与第一树脂的第一树脂之间的温度范围内的第二树脂的折射率变化率基本相同，温度和第二温度。

47. 发明授权

US07691577B2 Protein having an EGF-like repeat sequence 失效
标题翻译：具有EGF样重复序列的蛋白质
公开(公告)号：US07691577B2
公开(公告)日：2010-04-06
申请号：US11475860
申请日：2006-06-28
申请人： Noriko Nakamura , Tetsuo Sudo , Takatoshi Yamada
发明人： Noriko Nakamura , Tetsuo Sudo , Takatoshi Yamada
IPC分类号： C12N15/11 , C12N15/63 , C12N5/10 , C12Q1/68
CPC分类号： C07K14/475 , C07K14/485 , C07K2319/30 , C07K2319/43
摘要： The present invention provides SELF protein having controlling effects on growth and differentiation of undifferentiated cells, wherein the protein contains a novel EGF-like repeat sequence, SELF gene encoding the same, a recombinant vector and a transformed cell containing the SELF gene, a method for treatment or prophylaxis with SELF protein or a recombinant expression vector containing SELF gene, SELF promoter, a recombinant vector and a transformed cell containing SELF promoter, and a screening method using the transformed cell containing SELF promoter.
摘要翻译：本发明提供具有对未分化细胞的生长和分化具有控制作用的SELF蛋白质，其中所述蛋白质含有新的EGF样重复序列，编码其的SELF基因，重组载体和含有SELF基因的转化细胞， SELF蛋白或包含SELF基因，SELF启动子，重组载体和含有SELF启动子的转化细胞的重组表达载体的治疗或预防以及使用含有SELF启动子的转化细胞的筛选方法。

48. 发明申请

US20090121614A1 DIAMOND ELECTRON SOURCE HAVING CARBON-TERMINATED STRUCTURE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：具有碳结构的金刚石电子源及其制造方法
公开(公告)号：US20090121614A1
公开(公告)日：2009-05-14
申请号：US11994065
申请日：2006-06-21
申请人： Takatoshi Yamada , Christoph Nebel , Shinichi Shikata
发明人： Takatoshi Yamada , Christoph Nebel , Shinichi Shikata
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H01J9/025 , H01J1/304
摘要： The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.
摘要翻译：本发明提供了可用于低电压可操作的冷阴极表面结构的稳定且优异的电子发射特性的金刚石电子源和用于制备金刚石电子源的方法。具体地说，具有碳末端结构的金刚石电子源具有由电极和金刚石膜构成的结构，并且当施加电压时，从金刚石膜发射电子或电子束。金刚石膜由具有碳末端结构的金刚石制成。本文还提供了制备金刚石电子源的方法。

49. 发明授权

US06188528B1 Optical lens, and optical pickup and optical disc apparatus using such lens 失效
标题翻译：光学透镜，以及使用这种透镜的光学拾取和光盘装置
公开(公告)号：US06188528B1
公开(公告)日：2001-02-13
申请号：US09343553
申请日：1999-06-30
申请人： Takatoshi Yamada , Norio Fukasawa
发明人： Takatoshi Yamada , Norio Fukasawa
IPC分类号： G02B302
CPC分类号： G11B7/1374
摘要： An optical lens composed of a transparent material, wherein one surface thereof on a light source side is a convex aspherical surface of rotation symmetry defined by a function relative to the radial distance from an optical axis. The aspherical surface is shaped to be a curved one without any stepped region with regard to the radial direction in the defined area, and has a portion where the derivatives of the function are discontinuous at a predetermined radial position. Although not equipped with an iris diaphragm, this optical lens is capable of eliminating an incident light beam outside the optical effective surface thereof without deteriorating the optical characteristics.
摘要翻译：由透明材料构成的光学透镜，其中在光源侧的一个表面是由相对于从光轴的径向距离的函数限定的旋转对称的凸非球面。该非球面成形为相对于限定区域的径向方向没有任何台阶状的弯曲形状，并且具有功能的导数在预定的径向位置处不连续的部分。虽然没有配备虹膜光阑，但是该光学透镜能够消除光学有效表面外的入射光束而不损害光学特性。

50. 发明授权

US08842365B2 Phase difference element and method for manufacturing the same 有权
标题翻译：相位差元件及其制造方法
公开(公告)号：US08842365B2
公开(公告)日：2014-09-23
申请号：US13473100
申请日：2012-05-16
申请人： Nobuyuki Koike , Masatoshi Sasaki , Naoki Hanashima , Akio Takada , Takatoshi Yamada
发明人： Nobuyuki Koike , Masatoshi Sasaki , Naoki Hanashima , Akio Takada , Takatoshi Yamada
IPC分类号： G02B1/10 , G02B1/11
CPC分类号： G02B1/115
摘要： A phase difference element capable of reducing reflection of incident light and a manufacturing method for the phase difference element are disclosed. The phase difference element includes a transparent substrate 11, an interface anti-reflection film group 12 and an obliquely vapor deposited film 13. The interface anti-reflection film group is composed by one or more of alternately high and low refractive index films, with the film thicknesses of the respectively films being equal to or less than the wavelength of light in use. The obliquely vapor deposited film is formed by a plurality of layers of a dielectric material. These layers are alternately obliquely vapor deposited from two directions differing by 180° from each other. The refractive index of the interface anti-reflection film group 12 is higher than the refractive index of the transparent substrate 11 and lesser than that of the obliquely vapor deposited film 13.
摘要翻译：公开了能够减少入射光反射的相位差元件和相位差元件的制造方法。相位差元件包括透明基板11，界面防反射膜组12和倾斜气相沉积膜13.界面抗反射膜组由交替高和低折射率膜中的一个或多个组成，其中各膜的膜厚度等于或小于使用的光的波长。倾斜蒸镀膜由多层电介质材料形成。这些层从彼此相差180°的两个方向交替倾斜蒸镀。界面抗反射膜组12的折射率高于透明基板11的折射率，并且小于倾斜气相沉积膜13的折射率。

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