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41. 发明申请

US20100283514A1 POWER SUPPLY DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：电源装置及其驱动方法
公开(公告)号：US20100283514A1
公开(公告)日：2010-11-11
申请号：US12677131
申请日：2008-08-28
申请人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
发明人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
IPC分类号： G05F3/02
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/0828
摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要翻译：在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。

42. 发明授权

US07569875B2 Semiconductor device and a method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07569875B2
公开(公告)日：2009-08-04
申请号：US11717790
申请日：2007-03-14
申请人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
发明人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
IPC分类号： H01L29/80
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0661 , H01L29/402 , H01L29/41741 , H01L29/66136 , H01L29/7397 , H01L29/7813 , H01L29/861 , H01L29/868
摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要翻译：一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。栅电极是沟槽栅极。发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

43. 发明申请

US20080284075A1 LIQUID SEALED VIBRATION ISOLATING DEVICE 有权
标题翻译：液体密封隔离装置
公开(公告)号：US20080284075A1
公开(公告)日：2008-11-20
申请号：US11950462
申请日：2007-12-05
申请人： Jun Saito , Masatomo Nishizaka , Nobuo Kubo , Hiroshi Yanagase
发明人： Jun Saito , Masatomo Nishizaka , Nobuo Kubo , Hiroshi Yanagase
IPC分类号： F16F13/00 , F16F5/00
CPC分类号： F16F13/105
摘要： To block the transmission to a vehicle body side of the vibration due to the cavitation phenomenon occurred in a primary liquid chamber so as to prevent the generation of noises, at the same time, to make the device compact, and to improve the fitting accuracy to obtain the reliable positioning, a first metallic fitting and a second metallic fitting are connected by an insulator. A primary liquid chamber and a secondary liquid chamber formed inwardly are partitioned by a partition member and communicated therebetween by an orifice passage. The partition member is floatingly supported between an extended portion of the insulator and an outer peripheral thick wall portion of a diaphragm, and the tuning is performed to generate the rigid resonance at the predetermined frequency. An outer ring is provided in the outer peripheral thick wall portion so as to be securely fixed by a fixing portion formed by bending an end of an outer cylindrical fitting. The floatingly supporting structure does not become large-sized and complicated since the partition member is simply floatingly supported.
摘要翻译：为了阻止由于在主液室中发生的气蚀现象而导致的车体侧的传递，以防止产生噪声，同时使得该装置紧凑，并且将装配精度提高到获得可靠的定位，第一金属配件和第二金属配件通过绝缘体连接。向内形成的主液室和二液室由分隔构件分隔开，并通过孔通道连通。分隔构件浮动地支撑在绝缘体的延伸部分和隔膜的外周厚壁部分之间，并且进行调谐以产生预定频率的刚性谐振。在外周厚壁部分设置有外环，以便通过弯曲外圆筒形配件的端部而形成的固定部分可靠地固定。由于分隔构件被简单地浮动地支撑，所以浮动支撑结构不会变得大而复杂。

44. 发明申请

US20070221950A1 Semiconductor device and a method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070221950A1
公开(公告)日：2007-09-27
申请号：US11717790
申请日：2007-03-14
申请人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
发明人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
IPC分类号： H01L29/74
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0661 , H01L29/402 , H01L29/41741 , H01L29/66136 , H01L29/7397 , H01L29/7813 , H01L29/861 , H01L29/868
摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要翻译：一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。栅电极是沟槽栅极。发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

45. 发明申请

US20060292675A1 Process for producing fatty acids 失效
标题翻译：生产脂肪酸的方法
公开(公告)号：US20060292675A1
公开(公告)日：2006-12-28
申请号：US11450356
申请日：2006-06-12
申请人： Jun Saito , Yoshitaka Senda , Toshiteru Komatsu
发明人： Jun Saito , Yoshitaka Senda , Toshiteru Komatsu
IPC分类号： C12P7/64
CPC分类号： C11C1/045 , C12P7/6418
摘要： A process for producing fatty acids, which comprises supplying an oil phase substrate and a water phase substrate to an enzyme column packed with an immobilized enzyme, concurrently flowing them in the same direction, and hydrolyzing a fat and/or oil, wherein the oil phase substrate and the water phase substrate are alternately supplied to the enzyme column.
摘要翻译：一种生产脂肪酸的方法，其包括将油相底物和水相底物供给到装有固定化酶的酶柱，同时沿相同方向流动，并水解脂肪和/或油，其中所述油相底物和水相底物交替供应到酶柱。

46. 发明授权

US06992055B1 Process for preparing detergent compositions having high bulk density 失效
标题翻译：制备高堆积密度的洗涤剂组合物的方法
公开(公告)号：US06992055B1
公开(公告)日：2006-01-31
申请号：US09254474
申请日：1997-09-03
申请人： Hideichi Nitta , Hiroyuki Yamashita , Jun Saito
发明人： Hideichi Nitta , Hiroyuki Yamashita , Jun Saito
IPC分类号： C11D11/00
CPC分类号： C11D17/065 , C11D1/22 , C11D11/04
摘要： A method for producing detergent granules, includes the step of dry-neutralizing a liquid acid precursor of a non-soap, anionic surfactant with a water-soluble, solid, alkali inorganic substance. In this method, a dry-neutralizing step is carried out in the presence of 0.1 to 1.0 mol of an inorganic acid per mol of the liquid acid precursor of a non-soap, anionic surfactant. The above detergent granules have the features of extremely low tackiness of the granules and containing larger number of micropores. By using the detergent granules, a high-bulk density detergent composition having a small particle size can be obtained at high yields.
摘要翻译：制备洗涤剂颗粒的方法包括用水溶性固体碱性无机物质干燥中和非皂性阴离子表面活性剂的液体酸前体的步骤。在该方法中，在每1mol非皂性阴离子表面活性剂的液体酸前体存在下，在0.1〜1.0mol无机酸的存在下进行中和干燥步骤。上述洗涤剂颗粒具有颗粒粘度极低并含有较多数量的微孔的特征。通过使用洗涤剂颗粒，可以高产率获得具有小粒径的高堆积密度洗涤剂组合物。

47. 发明授权

US06603185B1 Voltage withstanding structure for a semiconductor device 有权
标题翻译：用于半导体器件的耐压结构
公开(公告)号：US06603185B1
公开(公告)日：2003-08-05
申请号：US09494995
申请日：2000-01-31
申请人： Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
发明人： Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
IPC分类号： H01L2358
CPC分类号： H01L29/7816 , H01L27/0611 , H01L29/402 , H01L29/404 , H01L29/7801 , H01L29/7821 , H01L29/7823 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the dielectric film; a spiral thin film layer having both ends connected to the first electrode and the second electrode, respectively, the spiral thin film layer surrounding the first electrode, the thin film layer being formed on the dielectric layer, and a plurality of p-n diodes formed in series in the spiral thin film layer along a longitudinal direction of the spiral thin film layer.
摘要翻译：一种半导体器件，包括：半导体衬底，形成在所述半导体衬底上的电介质膜，在所述电介质膜上彼此分离的第一电极和第二电极; 螺旋形薄膜层，其两端分别与第一电极和第二电极连接，围绕第一电极的螺旋形薄膜层，形成在电介质层上的薄膜层和串联形成的多个pn二极管沿着螺旋形薄膜层的纵向在螺旋形薄膜层中。

48. 发明授权

US06388040B1 Propylene/ethylene/&agr;-olefin terpolymers and processes for the production thereof 失效
标题翻译：丙烯/乙烯/α-烯烃三元共聚物及其制备方法
公开(公告)号：US06388040B1
公开(公告)日：2002-05-14
申请号：US09421329
申请日：1999-10-18
申请人： Hiroyuki Fujita , Jun Saito , Yoshitoyo Yasuda , Yoshiyuki Ohgi , Yasuhiro Shiraishi , Shinji Nakata , Tsutomu Ushioda , Mototake Tsutsui
发明人： Hiroyuki Fujita , Jun Saito , Yoshitoyo Yasuda , Yoshiyuki Ohgi , Yasuhiro Shiraishi , Shinji Nakata , Tsutomu Ushioda , Mototake Tsutsui
IPC分类号： C08F21000
CPC分类号： C08F210/16 , C08F4/65912 , C08F4/65916 , C08F10/00 , C08F210/06 , Y10S526/943 , C08F4/65927 , C08F210/08 , C08F2500/12 , C08F2500/26
摘要： A propylene/ethylene/&agr;-olefin terpolymer characterized in that i) there is from 0.01 mol % to less than 15 mol % of a comonomer unit with a molar ratio of ethylene units/C4-C20 &agr;-olefin units being in the range of from 6.5×10−4 to 0.99, and from more than 85 mol % to not more than 99.99 mol % of a propylene unit with 2,1- and 1,3-propylene units being in the range of from 0 to 1 mol %, in a polymer chain determined by 13C-NMR spectroscopy; ii) a weight average molecular weight (Mw) determined by GPC is in the range of from 40,000 to 1,000,000; and iii) the amount of the component eluted in o-dichlorobenzene at a temperature of not higher than 40° C. is not more than 10 % by weight based on the total weight of the terpolymer and the amount of the component eluted in o-dichlorobenzene within the ±10° C. range of an elution peak temperature is not less than 75 % by weight based on the weight of the component eluted at a temperature of higher than 0° C.
摘要翻译：丙烯/乙烯/α-烯烃三元共聚物，其特征在于：）具有0.01摩尔％至小于15摩尔％的共聚单体单元，其中乙烯单元/ C 4 -C 20α-烯烃单元的摩尔比在具有2,1-和1,3-丙烯单元的丙烯单元的摩尔比为6.5×10 -4〜0.99，以及大于85摩尔％以上且99.99摩尔％以下的丙烯单元，为0〜1摩尔％通过13 C-NMR光谱测定的聚合物链; ii）通过GPC测定的重均分子量（Mw）在40,000至1,000,000的范围内; 和iii）在不高于40℃的温度下在邻二氯苯中洗脱的组分的量不超过基于三元共聚物的总重量的10重量％，并且在邻二氯苯中洗脱的组分的量洗脱峰温度的±10℃范围内，在高于0℃的温度下洗脱的成分的重量为75重量％以上。

49. 发明授权

US06344528B1 Catalyst for olefin (CO) polymerization and process for the production of olefin (CO) polymers 失效
标题翻译：烯烃（CO）聚合催化剂和烯烃（CO）聚合物生产方法
公开(公告)号：US06344528B1
公开(公告)日：2002-02-05
申请号：US09655395
申请日：2000-09-05
申请人： Tsutomu Ushioda , Jun Saito , Mototake Tsutsui
发明人： Tsutomu Ushioda , Jun Saito , Mototake Tsutsui
IPC分类号： C08F414
CPC分类号： C08F10/00 , C08F4/65912 , C08F110/02 , C08F210/16 , Y10S526/943 , C08F4/65916 , C08F4/65925 , C08F2500/03 , C08F210/14
摘要： To provide a catalyst for olefin (co)polymerization which shows a high polymerization activity and which can produce olefin (co)polymers having a high molecular weight and a narrow molecular weight distribution; the catalyst for olefin (co)polymerization is rendered a carried type catalyst comprising a transition metal compound represented by general formula (I) or (II) and aluminoxane carried on a fine particulate carrier.
摘要翻译：提供显示高聚合活性并可以生产具有高分子量和窄分子量分布的烯烃（共）聚合物的烯烃（共）聚合催化剂; 用于烯烃（共）聚合的催化剂是包含由通式（I）或（II）表示的过渡金属化合物和承载在细颗粒载体上的铝氧烷的载体型催化剂。

50. 发明授权

US06326493B1 Metallocene compounds, processes for the preparation thereof, catalyst components for olefin polymerization, and processes for the production of olefin polymers 有权
标题翻译：茂金属化合物，其制备方法，用于烯烃聚合的催化剂组分和烯烃聚合物的制备方法
公开(公告)号：US06326493B1
公开(公告)日：2001-12-04
申请号：US09449638
申请日：1999-11-30
申请人： Seiki Mitani , Masato Nakano , Jun Saito , Hiroshi Yamazaki , Keisuke Kimura
发明人： Seiki Mitani , Masato Nakano , Jun Saito , Hiroshi Yamazaki , Keisuke Kimura
IPC分类号： C07F1700
CPC分类号： C08F10/00 , C07F17/00 , C08F4/65904 , C08F4/65912 , C08F4/65916 , C08F110/06 , Y10S526/943 , C08F4/65927 , C08F2500/03 , C08F2500/15 , C08F4/6592
摘要： A metallocene compound is provided wherein to a transition metal compound is bonded a multidentate compound wherein a substituted cycloalkadienyl ring CA1 having therein a heteroaromatic group Ra containing an oxygen, sulfur or nitrogen atom on a cycloalkadienyl ring, preferably the five-membered ring thereof, and an unsubstituted or substituted cycloalkadienyl group CA2 or —(R1)N—, —O—, —S— or —(R1)P—, preferably CA2, more preferably a substituted cycloalkadienyl group identical with CA1 are bonded through a divalent linking group. The metallocene compound is suitable as a principal ingredient of a catalyst for the polymerization of olefins, particularly achieving a very high effect in making the molecular weight of a polypropylene higher.
摘要翻译：提供茂金属化合物，其中过渡金属化合物与多齿化合物结合，其中其中具有含有氧，硫或氮原子的杂芳基R a的取代的环二烯基环CA1在环二烯基环上，优选其五元环，和未取代或取代的环二烯基CA2或 - （R1）N-，-O-，-S-或 - （R1）P-，优选CA2，更优选与CA1相同的取代的环二烯基通过二价连接基团键合。茂金属化合物适合作为烯烃聚合催化剂的主要成分，特别是在使聚丙烯的分子量更高的情况下实现非常高的效果。

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