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41. 发明申请

US20080024242A1 Phase shifter, method of fabricating the same, and duplexer having the same 有权
标题翻译：移相器及其制造方法，以及具有该移相器的双工器
公开(公告)号：US20080024242A1
公开(公告)日：2008-01-31
申请号：US11644910
申请日：2006-12-26
申请人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
发明人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
IPC分类号： H03H7/46
CPC分类号： H03H7/463 , H03H7/18
摘要： A phase shifter fabricated by a simple process and having a simple structure, a method of fabricating the same, and a duplexer having the same are disclosed. The duplexer includes a transmitting-end filter capable of passing only a signal in the range of a transmission frequency, a receiving-end filter capable of passing only a signal in the range of a reception frequency, and a phase shifter interposed between the transmitting-end filter and the receiving-end filter to isolate a transmitted signal of the transmitting-end filter and a received signal of the receiving-end filter from each other. The phase shifter includes a substrate provided with an input port and an output port, an inductor formed on the substrate and connected to the input and output ports, and a capacitor provided on the substrate, wherein the capacitor and inductor share a region of the substrate.
摘要翻译：公开了一种通过简单工艺制造并具有简单结构的移相器，其制造方法和具有该相移器的双工器。双工器包括能够仅通过传输频率范围内的信号的发送端滤波器，仅能够接收接收频率范围内的信号的接收端滤波器和插入在发送频率范围之间的移相器，端接滤波器和接收端滤波器，以将发送端滤波器的发送信号和接收端滤波器的接收信号彼此隔离。移相器包括设置有输入端口和输出端口的基板，形成在基板上并连接到输入和输出端口的电感器和设置在基板上的电容器，其中电容器和电感器共享基板的区域。

42. 发明申请

US20060138965A1 Magnetron 有权
标题翻译：磁控管
公开(公告)号：US20060138965A1
公开(公告)日：2006-06-29
申请号：US11303986
申请日：2005-12-19
申请人： Dong-ha Shim , Kuang-woo Nam , Yun-kwon Park , In-sang Song
发明人： Dong-ha Shim , Kuang-woo Nam , Yun-kwon Park , In-sang Song
IPC分类号： H01J25/50
CPC分类号： H01J25/50
摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.
摘要翻译：提供在太赫兹频带中产生高频能量的磁控管。磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。

43. 发明授权

US07973618B2 Phase shifter, method of fabricating the same, and duplexer having the same 有权
标题翻译：移相器及其制造方法，以及具有该移相器的双工器
公开(公告)号：US07973618B2
公开(公告)日：2011-07-05
申请号：US11644910
申请日：2006-12-26
申请人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
发明人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
IPC分类号： H03H7/46
CPC分类号： H03H7/463 , H03H7/18
摘要： A phase shifter fabricated by a simple process and having a simple structure, a method of fabricating the same, and a duplexer having the same are disclosed. The duplexer includes a transmitting-end filter capable of passing only a signal in the range of a transmission frequency, a receiving-end filter capable of passing only a signal in the range of a reception frequency, and a phase shifter interposed between the transmitting-end filter and the receiving-end filter to isolate a transmitted signal of the transmitting-end filter and a received signal of the receiving-end filter from each other. The phase shifter includes a substrate provided with an input port and an output port, an inductor formed on the substrate and connected to the input and output ports, and a capacitor provided on the substrate, wherein the capacitor and inductor share a region of the substrate.
摘要翻译：公开了一种通过简单工艺制造并具有简单结构的移相器，其制造方法和具有该相移器的双工器。双工器包括能够仅通过传输频率范围内的信号的发送端滤波器，仅能够接收接收频率范围内的信号的接收端滤波器和插入在发送频率范围之间的移相器，端接滤波器和接收端滤波器，以将发送端滤波器的发送信号和接收端滤波器的接收信号彼此隔离。移相器包括设置有输入端口和输出端口的基板，形成在基板上并连接到输入和输出端口的电感器和设置在基板上的电容器，其中电容器和电感器共享基板的区域。

44. 发明授权

US07274147B2 Magnetron 有权
标题翻译：磁控管
公开(公告)号：US07274147B2
公开(公告)日：2007-09-25
申请号：US11303986
申请日：2005-12-19
申请人： Dong-ha Shim , Kuang-woo Nam , Yun-kwon Park , In-sang Song
发明人： Dong-ha Shim , Kuang-woo Nam , Yun-kwon Park , In-sang Song
IPC分类号： H03B9/10
CPC分类号： H01J25/50
摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.
摘要翻译：提供在太赫兹频带中产生高频能量的磁控管。磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。

45. 发明申请

US20070182510A1 Multi-band filter module and method of fabricating the same 有权
标题翻译：多频带滤波器模块及其制造方法
公开(公告)号：US20070182510A1
公开(公告)日：2007-08-09
申请号：US11633464
申请日：2006-12-05
申请人： Yun-kwon Park , In-sang Song , Chul-soo Kim , Kuang-woo Nam
发明人： Yun-kwon Park , In-sang Song , Chul-soo Kim , Kuang-woo Nam
IPC分类号： H03H9/58
CPC分类号： H03H9/703 , H01L2924/0002 , H03H3/04 , H03H9/105 , H03H9/587 , H03H2250/00 , Y10T29/42 , H01L2924/00
摘要： A multi-band filter module and a method of fabricating the same are disclosed. At least one upper filter is deposited on an upper surface of a first substrate. The first packaging substrate packages the upper filter deposited on the first substrate. At least one lower filter is deposited on an upper surface of the second substrate. The second packaging substrate packages the lower filter deposited on the second substrate. The lower surface of the first substrate is joined to a lower surface of the second substrate to face each other.
摘要翻译：公开了一种多带滤波器模块及其制造方法。至少一个上部过滤器沉积在第一衬底的上表面上。第一封装衬底封装沉积在第一衬底上的上过滤器。至少一个下部过滤器沉积在第二衬底的上表面上。第二封装衬底封装沉积在第二衬底上的下部滤波器。第一基板的下表面被接合到第二基板的下表面以彼此面对。

46. 发明授权

US07205702B2 Film bulk acoustic resonator and method for manufacturing the same 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07205702B2
公开(公告)日：2007-04-17
申请号：US10929569
申请日：2004-08-31
申请人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
发明人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H2003/021 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要翻译：一种薄膜体声波谐振器及其制造方法。薄膜体声波谐振器包括基板，气相沉积在基板上的保护层，气相沉积在保护层上并距离基板的上侧预定距离的膜，以及气相沉积在膜。此外，制造方法包括在基板上气相沉积膜，在膜的两侧形成保护层，在膜上气相沉积层叠的共振部分，并且通过去除设置在膜之间的基板的一部分来形成气隙保护层。因此，膜可以以简单的结构形成并且没有应力，并且整个制造过程被简化。

47. 发明授权

US07964427B2 Silicon-based RF system and method of manufacturing the same 有权
标题翻译：硅基RF系统及其制造方法
公开(公告)号：US07964427B2
公开(公告)日：2011-06-21
申请号：US12759648
申请日：2010-04-13
申请人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
发明人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
IPC分类号： H01L21/00
CPC分类号： H01L25/165 , H01L2924/0002 , H01L2924/09701 , H03H9/1057 , H01L2924/00
摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要翻译：一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

48. 发明授权

US07793395B2 Method for manufacturing a film bulk acoustic resonator 有权
标题翻译：薄膜体声共振器的制造方法
公开(公告)号：US07793395B2
公开(公告)日：2010-09-14
申请号：US11687734
申请日：2007-03-19
申请人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
发明人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
IPC分类号： H01L41/22 , H01L41/00
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H2003/021 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要翻译：一种薄膜体声波谐振器及其制造方法。薄膜体声波谐振器包括基板，气相沉积在基板上的保护层，气相沉积在保护层上并距离基板的上侧预定距离的膜，以及气相沉积在膜。此外，制造方法包括在基板上气相沉积膜，在膜的两侧形成保护层，在膜上气相沉积层叠的共振部分，并且通过去除设置在膜之间的基板的一部分来形成气隙保护层。因此，膜可以以简单的结构形成并且没有应力，并且整个制造过程被简化。

49. 发明申请

US20050253670A1 Air-gap type thin-film bulk acoustic resonator and fabrication method therefor 有权
标题翻译：气隙型薄膜体声波谐振器及其制造方法
公开(公告)号：US20050253670A1
公开(公告)日：2005-11-17
申请号：US11130157
申请日：2005-05-17
申请人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
发明人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/24 , H03H9/56
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： An air-gap type thin-film bulk acoustic resonator. The air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
摘要翻译：气隙式薄膜体声共振器。气隙型薄膜体声波谐振器具有形成在其上表面的预定部分上的空腔的基板; 具有第一电极，压电体和第二电极的结构的共振部分，其依次沉积并形成在空腔的上侧; 以及穿过基板的下表面并连接到空腔的至少一个通孔。

50. 发明授权

US07253705B2 Air-gap type thin-film bulk acoustic resonator and fabrication method therefor 有权
标题翻译：气隙型薄膜体声波谐振器及其制造方法
公开(公告)号：US07253705B2
公开(公告)日：2007-08-07
申请号：US11130157
申请日：2005-05-17
申请人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
发明人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
IPC分类号： H03H9/15 , H03H3/02 , H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： An air-gap type thin-film bulk acoustic resonator. The air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
摘要翻译：气隙式薄膜体声共振器。气隙型薄膜体声波谐振器具有形成在其上表面的预定部分上的空腔的基板; 具有第一电极，压电体和第二电极的结构的共振部分，其依次沉积并形成在空腔的上侧; 以及穿过基板的下表面并连接到空腔的至少一个通孔。

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