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41. 发明授权

US09200368B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US09200368B2
公开(公告)日：2015-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/34 , C23C16/509 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

42. 外观设计

USD680946S1 Gas flow diffuser faceplate 有权
标题翻译：气流扩散面板
公开(公告)号：USD680946S1
公开(公告)日：2013-04-30
申请号：US29353504
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

43. 外观设计

USD669032S1 Flow blocking shadow frame support 有权
标题翻译：流阻挡影框支持
公开(公告)号：USD669032S1
公开(公告)日：2012-10-16
申请号：US29353503
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

44. 发明申请

US20120031333A1 VERTICAL INLINE CVD SYSTEM 有权
公开(公告)号：US20120031333A1
公开(公告)日：2012-02-09
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01L21/677 , C23C16/511 , B25J9/00 , C23C16/44
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

45. 发明申请

US20110290183A1 Plasma Uniformity Control By Gas Diffuser Hole Design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20110290183A1
公开(公告)日：2011-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

46. 发明申请

US20110287374A1 FLOATING SLIT VALVE FOR TRANSFER CHAMBER INTERFACE 有权
标题翻译：浮动接口的浮动阀门
公开(公告)号：US20110287374A1
公开(公告)日：2011-11-24
申请号：US13195592
申请日：2011-08-01
申请人： John M. White , Shinichi Kurita , Takayuki Matsumoto
发明人： John M. White , Shinichi Kurita , Takayuki Matsumoto
IPC分类号： F26B11/00
CPC分类号： F16K51/02 , Y10S438/905 , Y10T29/49412
摘要： The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.
摘要翻译：本发明通常包括用于与室连接的浮动狭缝阀。浮动狭缝阀相对于诸如室的另一物体移动或“浮动”。狭缝阀可以联接在两个腔室之间。当与狭缝阀联接的室被加热时，狭缝阀也可以通过传导加热。当狭缝阀被加热时，它可以热膨胀。当在室中抽真空时，狭缝阀可能由于真空偏转而变形。通过在室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间可能不会摩擦室，因此不会产生不期望的颗粒污染物。此外，穿过腔室钻出的狭缝阀可以被定尺寸以适应狭缝阀的热膨胀/收缩和真空偏转。

47. 发明授权

US07988129B2 Floating slit valve for transfer chamber interface 有权
标题翻译：用于传送室接口的浮动狭缝阀
公开(公告)号：US07988129B2
公开(公告)日：2011-08-02
申请号：US12040291
申请日：2008-02-29
申请人： John M. White , Shinichi Kurita , Takayuki Matsumoto
发明人： John M. White , Shinichi Kurita , Takayuki Matsumoto
IPC分类号： F16K3/00
CPC分类号： F16K51/02 , Y10S438/905 , Y10T29/49412
摘要： The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.
摘要翻译：本发明通常包括用于与室连接的浮动狭缝阀。浮动狭缝阀相对于诸如室的另一物体移动或“浮动”。狭缝阀可以联接在两个腔室之间。当与狭缝阀联接的室被加热时，狭缝阀也可以通过传导加热。当狭缝阀被加热时，它可以热膨胀。当在室中抽真空时，狭缝阀可能由于真空偏转而变形。通过在室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间可能不会摩擦室，因此不会产生不期望的颗粒污染物。此外，穿过腔室钻出的狭缝阀可以被定尺寸以适应狭缝阀的热膨胀/收缩和真空偏转。

48. 发明申请

US20100327162A1 IN-LINE ELECTRON BEAM TEST SYSTEM 有权
标题翻译：在线电子束测试系统
公开(公告)号：US20100327162A1
公开(公告)日：2010-12-30
申请号：US12826635
申请日：2010-06-29
申请人： FAYEZ E. ABBOUD , Sriram Krishnaswami , Benjamin M. Johnston , Hung T. Nguyen , Matthias Brunner , Ralf Schmid , John M. White , Shinichi Kurita , James C. Hunter
发明人： FAYEZ E. ABBOUD , Sriram Krishnaswami , Benjamin M. Johnston , Hung T. Nguyen , Matthias Brunner , Ralf Schmid , John M. White , Shinichi Kurita , James C. Hunter
IPC分类号： G01N23/00
CPC分类号： H01L21/67748 , H01J2237/2811 , H01J2237/2817 , H01L21/67201 , H01L21/67236
摘要： A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system.
摘要翻译：描述了用于测试形成在大面积基板上的多个电子装置的方法和装置。在一个实施例中，该装置在至少一个室内的一个线性轴线上对衬底进行测试，所述至少一个腔室比待测试衬底的尺寸略宽。由于系统的尺寸和体积较小，洁净室空间和处理时间被最小化。

49. 发明申请

US20100281683A1 ELECTRONIC DEVICE MANUFACTURING CHAMBER AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：电子设备制造室及其形成方法
公开(公告)号：US20100281683A1
公开(公告)日：2010-11-11
申请号：US12840262
申请日：2010-07-20
申请人： John M. White , Donald Verplancken , Shinichi Kurita
发明人： John M. White , Donald Verplancken , Shinichi Kurita
IPC分类号： B23P19/00
CPC分类号： H01L21/67236 , H01L21/67196 , Y10S414/135 , Y10S414/139 , Y10T29/49826 , Y10T29/53
摘要： A non-polygon shaped, multi-piece chamber is provided. A non-polygon shaped, multi-piece chamber may include (1) a central piece having a first side and a second side, (2) a first side piece adapted to couple with the first side of the central piece, and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece, and the second side piece form a cylindrical overall shape when coupled together. Numerous other aspects are provided.
摘要翻译：提供非多边形形状的多片式室。非多边形多片式室可以包括（1）具有第一侧和第二侧的中心件，（2）适于与中心件的第一侧连接的第一侧件，以及（3）适于与中心件的第二侧联接的第二侧件。当连接在一起时，中心件，第一侧件和第二侧件形成圆柱形的整体形状。提供了许多其他方面。

50. 发明授权

US07681986B2 Methods and apparatus for depositing ink onto substrates 失效
标题翻译：用于在基材上沉积墨的方法和设备
公开(公告)号：US07681986B2
公开(公告)日：2010-03-23
申请号：US11761832
申请日：2007-06-12
申请人： Bassam Shamoun , John M. White , Quanyuan Shang , Shinichi Kurita
发明人： Bassam Shamoun , John M. White , Quanyuan Shang , Shinichi Kurita
IPC分类号： B41J2/25
CPC分类号： B41J2/2132
摘要： Embodiments of an ink jet printing system include a motion stage adapted to move a substrate having a display object in a printing direction and a first printing assembly mounted over the motion stage including a set of print heads aligned and arranged consecutively in the printing direction such that the display object moves under the print heads sequentially. Embodiments of a method of ink jet printing include moving a substrate under the print heads of printing assembly sequentially in a printing direction, activating alternate ink jetting channels within each print head of the first printing assembly, activating corresponding channels within adjacent print heads in the first printing assembly alternately, and depositing ink in alternating sub-pixels within one or more pixels on the substrate.
摘要翻译：喷墨打印系统的实施例包括适于在打印方向上移动具有显示对象的基板的运动台和安装在运动台上的第一印刷组件，该第一印刷组件包括在打印方向上对齐和排列的一组打印头，使得显示对象顺序地在打印头下移动。喷墨打印方法的实施例包括在打印方向上顺序地移动印刷组件的打印头下的基板，激活第一印刷组件的每个打印头内的交替喷墨通道，在第一印刷组件的相邻打印头内激活相应的通道交替地印刷组件，并且在基板上的一个或多个像素内的交替子像素中沉积墨。

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