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    • 44. 发明授权
    • Removal of alkaline crystal defects in lithographic patterning
    • 去除光刻图案中的碱性晶体缺陷
    • US09012133B2
    • 2015-04-21
    • US13221248
    • 2011-08-30
    • Javier J. PerezDario L. GoldfarbRanee W. KwongLibor Vyklicky
    • Javier J. PerezDario L. GoldfarbRanee W. KwongLibor Vyklicky
    • G03F7/32G03F7/40
    • G03F7/405
    • An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.
    • 在基材的表面上形成粘合促进剂层作为粘合促进剂层,在其上施加光致抗蚀剂。 光致抗蚀剂被光刻曝光。 将光刻曝光的光致抗蚀剂的可溶部分溶解在包括四烷基氢氧化铵的显影剂溶液中。 四烷基氢氧化铵盐以结晶形式形成在基材的表面上。 将水溶性酸性聚合物层施加在基材的表面上以溶解四烷基氢氧化铵盐。 将水溶性酸性聚合物层用水冲洗掉,由此提供在基材上不包括四烷基氢氧化铵盐的清洁表面。 随后的工艺可以在衬底上进行,其被显影的光致抗蚀剂的剩余部分覆盖,并且在未被光致抗蚀剂覆盖的区域中具有清洁的表面。