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41. 发明授权

US09577209B2 Light-emitting device and manufacturing method thereof, lighting device, and display device 有权
标题翻译：发光装置及其制造方法，照明装置和显示装置
公开(公告)号：US09577209B2
公开(公告)日：2017-02-21
申请号：US13367833
申请日：2012-02-07
申请人： Yoshifumi Tanada , Naoya Sakamoto , Hiroki Adachi , Shingo Eguchi , Koji Ono , Kensuke Yoshizumi , Hiroto Shinoda
发明人： Yoshifumi Tanada , Naoya Sakamoto , Hiroki Adachi , Shingo Eguchi , Koji Ono , Kensuke Yoshizumi , Hiroto Shinoda
IPC分类号： H01L51/52 , H01L51/56 , H01L27/32
CPC分类号： H01L51/5212 , H01L27/3279 , H01L51/5228 , H01L2251/5361
摘要： The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.
摘要翻译：本发明的重点是在基板侧设置用于提高上部电极的导电性的辅助布线的结构。发光装置的导电性辅助布线设置在基板上，辅助配线的上部沿与基板平行的方向突出。此外，在包括下电极层和辅助布线的区域中形成的EL层在物理上被辅助布线分开。以类似于下电极层的方式形成的上电极层可以电连接到辅助布线的侧表面的至少一部分。这种辅助布线可以用在照明装置和显示装置中。

42. 发明授权

US08970106B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08970106B2
公开(公告)日：2015-03-03
申请号：US13360838
申请日：2012-01-30
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J1/62 , H01J63/04 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

43. 发明授权

US07492090B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07492090B2
公开(公告)日：2009-02-17
申请号：US10937904
申请日：2004-09-10
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J63/04 , H01J1/62 , H05B33/04
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
摘要翻译：根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极层如ITO。此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

44. 发明申请

US20090042326A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090042326A1
公开(公告)日：2009-02-12
申请号：US12239248
申请日：2008-09-26
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01L33/00
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
摘要翻译：根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极层如ITO。此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

45. 发明授权

US07476577B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07476577B2
公开(公告)日：2009-01-13
申请号：US11582471
申请日：2006-10-17
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L21/66 , H01L21/00 , H01L21/20
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

46. 发明授权

US07132686B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07132686B2
公开(公告)日：2006-11-07
申请号：US11298378
申请日：2005-12-08
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

47. 发明申请

US20060113543A1 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US20060113543A1
公开(公告)日：2006-06-01
申请号：US11298378
申请日：2005-12-08
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

48. 发明授权

US06645826B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US06645826B2
公开(公告)日：2003-11-11
申请号：US10093313
申请日：2002-03-07
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L2126
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

49. 发明授权

US06479334B1 Thin film transistor and semiconductor device and method for forming the same 失效
标题翻译：薄膜晶体管和半导体器件及其形成方法
公开(公告)号：US06479334B1
公开(公告)日：2002-11-12
申请号：US09444405
申请日：1999-11-22
申请人： Mitsufumi Codama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada
发明人： Mitsufumi Codama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada
IPC分类号： H01L2100
CPC分类号： H01L29/78603 , H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L27/1218
摘要： A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.
摘要翻译：薄膜晶体管和半导体器件及其形成方法。将形成在绝缘基板上的硅薄膜在550〜800℃下加热，使其具有结晶性，利用所得到的结晶硅膜形成薄膜晶体管。绝缘基板的热收缩在加热过程中设定在30〜500ppm的范围内，使得薄膜晶体管具有高迁移率，低阈值电压和高截止电阻。在薄膜晶体管制造工艺中的图案化处理之后，在加热过程中绝缘基板的热收缩也可以设定为100ppm以下。

50. 发明授权

US06452212B1 Semiconductor device and method for operating the same 失效
标题翻译：半导体装置及其操作方法
公开(公告)号：US06452212B1
公开(公告)日：2002-09-17
申请号：US08934088
申请日：1997-09-19
申请人： Mitsufumi Codama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Michio Arai
发明人： Mitsufumi Codama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Michio Arai
IPC分类号： H01L2976
CPC分类号： H01L21/84 , H01L27/12 , H01L27/1237 , H01L27/14609 , H01L27/14632 , H01L27/14687
摘要： A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region. The semiconductor device according to the present invention is particularly an image sensor device which amplifies an optical signal and which outputs it as an electric signal.
摘要翻译：一种半导体器件，包括由在具有绝缘表面的衬底上形成的晶体硅制成的有源层; 形成在所述有源层上的栅极绝缘膜; 以及与所述有源层接触地设置的源极区域和漏极区域; 其中，所述有源层在照射光时产生光载流子，所产生的光电载体的一部分相对于在与栅极绝缘膜的界面附近流动的载流子相反的极性临时累积在所述活性层，以改变所述有源层的区域的电阻，并且根据源极和漏极之间的电流流动的变化来检测照射到所述有源层的光，这是根据所述有源层的区域中的电阻变化而发生的活跃区域。根据本发明的半导体器件特别地是放大光信号并将其作为电信号输出的图像传感器装置。

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