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    • 3. 发明授权
    • Light-emitting device and manufacturing method thereof
    • 发光元件及其制造方法
    • US08772820B2
    • 2014-07-08
    • US13430974
    • 2012-03-27
    • Kensuke YoshizumiKoji Ono
    • Kensuke YoshizumiKoji Ono
    • H01L33/00
    • H01L51/5228H01L27/3246H01L27/3279H01L51/5212H01L51/525H01L2251/5315H01L2251/5361
    • A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer.
    • 提供了一种高度可靠的发光装置,可以不使用金属掩模形成的发光装置,或者抑制了由于上部电极层的电阻引起的电压降的发光装置。 当EL膜形成在具有不平坦形状的导电连接电极层上时,导电连接电极层的表面不能被完全覆盖。 随后,在其上形成作为EL元件的上电极层的导电膜; 从而形成与导电连接电极层接触的区域。 此外,在对置基板上的与导电连接电极层重叠的位置上设置结构,然后将基板彼此接合,使得该结构物理地与导电连接电极层上的上电极层接触 。
    • 4. 发明申请
    • Light-Emitting Device and Manufacturing Method Thereof
    • 发光装置及其制造方法
    • US20120248489A1
    • 2012-10-04
    • US13430974
    • 2012-03-27
    • Kensuke YoshizumiKoji Ono
    • Kensuke YoshizumiKoji Ono
    • H01L51/50H01L33/62
    • H01L51/5228H01L27/3246H01L27/3279H01L51/5212H01L51/525H01L2251/5315H01L2251/5361
    • A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer.
    • 提供了一种高度可靠的发光装置,可以不使用金属掩模形成的发光装置,或者抑制了由于上部电极层的电阻引起的电压降的发光装置。 当EL膜形成在具有不平坦形状的导电连接电极层上时,导电连接电极层的表面不能被完全覆盖。 随后,在其上形成作为EL元件的上电极层的导电膜; 从而形成与导电连接电极层接触的区域。 此外,在对置基板上的与导电连接电极层重叠的位置上设置结构,然后将基板彼此接合,使得该结构物理地与导电连接电极层上的上电极层接触 。
    • 5. 发明授权
    • Light-emitting device and a method of manufacturing light-emitting device
    • 发光装置及其制造方法
    • US08809879B2
    • 2014-08-19
    • US13439237
    • 2012-04-04
    • Kensuke YoshizumiKoji Ono
    • Kensuke YoshizumiKoji Ono
    • H01L33/08H01L33/52
    • H01L51/56H01L27/3246H01L51/0014H01L51/0023H01L51/525
    • To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.
    • 为了提供高度可靠的发光装置,特别是可以在不使用金属掩模的情况下形成的发光装置,并且包括多个发光元件。 至少其一端具有锐角形状的结构体被设置成使得端部能够向下通过形成在绝缘层上的导电膜,并且可以至少与具有弹性的绝缘层接触,从而物理上 分离导电膜,因此导电膜彼此电绝缘。 这样的结构可以设置在相邻的发光元件之间,使得发光元件在发光器件中可以彼此电绝缘。
    • 7. 发明授权
    • Light-emitting device and lighting device
    • 发光装置及照明装置
    • US08823030B2
    • 2014-09-02
    • US13560046
    • 2012-07-27
    • Yasuhiro JinboKensuke Yoshizumi
    • Yasuhiro JinboKensuke Yoshizumi
    • H01L33/00
    • H01L51/5265H01L51/504H01L51/5212H01L51/5275H01L2251/5361
    • A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.
    • 提供具有各种发光颜色并且可以有效且容易地制造的发光装置。 由半透射半导体膜形成的第一导电层设置在第一发光元件区域中,使得特定波长区域中的光的强度随腔效应而增加。 结果,整个发光装置可以发出所需的光。 当使用具有低电阻的材料形成第一导电层时,可以防止发光器件中的透明导电层中的电压降。 因此,可以制造发光不均匀性较差的发光元件。 通过将这种结构应用于白色发光元件,可以获得具有优异显色特性的期望的白色发光或白色发光。 此外,可以提供包括具有较少发射不均匀性的白光发射装置的大面积照明装置。
    • 8. 发明申请
    • Semiconductor Device and Method for Manufacturing the Same
    • 半导体装置及其制造方法
    • US20120001180A1
    • 2012-01-05
    • US13173484
    • 2011-06-30
    • Tomokazu YokoiKensuke Yoshizumi
    • Tomokazu YokoiKensuke Yoshizumi
    • H01L29/786
    • H01L29/45H01L21/28525H01L21/76879H01L29/458H01L29/78H01L29/7869H01L2221/1094
    • Provided is a structure to obtain a reliable electrical contact through a narrow contact hole formed in an insulating layer, which is required in the miniaturization of a semiconductor device. An exemplified structure includes a thin film transistor comprising: a lower electrode over and in contact with a semiconductor layer, the lower electrode comprising a metal or a metal compound; an insulating layer over the lower electrode, the insulating layer having a contact hole reaching the lower electrode; a conductive silicon whisker grown from a surface of the lower electrode; and an upper electrode over the insulating layer and in contact with the conductive silicon whisker. The ability of the conductive silicon whisker grown from the lower electrode to ohmically contact with the lower and upper electrodes leads to a reliable electrical contact between the thin film transistor and a wiring.
    • 提供了通过形成在半导体器件的小型化所需的绝缘层中的窄接触孔获得可靠的电接触的结构。 示例性结构包括薄膜晶体管,其包括:在半导体层上方并与其接触的下电极,所述下电极包括金属或金属化合物; 在所述下电极上的绝缘层,所述绝缘层具有到达所述下电极的接触孔; 从下电极的表面生长的导电硅晶须; 以及在绝缘层上方并与导电硅晶须接触的上电极。 从下电极生长的导电硅晶须与下电极和上电极欧姆接触的能力导致薄膜晶体管和布线之间的可靠的电接触。