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41. 发明授权

US5529962A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5529962A
公开(公告)日：1996-06-25
申请号：US406242
申请日：1995-03-14
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1,000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

42. 发明授权

US5393715A Aluminum nitride sintered body and method of preparing the same 失效
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US5393715A
公开(公告)日：1995-02-28
申请号：US115446
申请日：1993-09-01
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/626 , H01L21/48 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800.degree. to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.
摘要翻译：氮化铝烧结体具有高的击穿电压，用作特别适用于高集成电路的衬底材料。氮化铝烧结体含有钛，其以氮化铝晶格内的固体溶质以至少50ppm至不大于1000ppm的重量比包含在其中。由电子自旋共振的吸收光谱确定的烧结体中不成对的电子浓度为至少1×10 13 / g。在氮化铝烧结体中存在钛和铝的氮氧化物的至少0.1重量％且不超过5.0重量％（以TiO 2计）。氮化铝烧结体的击穿电压为20kV / mm。烧结体是通过在氮气气氛中在800〜1400℃的温度下氮化氮化铝原料粉末，用烧结助剂向其中加入钛的氮氧化物，烧结该混合物而得到的。

43. 发明授权

US5190601A Surface structure of ceramics substrate and method of manufacturing the same 失效
标题翻译：陶瓷基体的表面结构及其制造方法
公开(公告)号：US5190601A
公开(公告)日：1993-03-02
申请号：US808154
申请日：1991-12-13
申请人： Akira Yamakawa , Akira Sasame
发明人： Akira Yamakawa , Akira Sasame
IPC分类号： H01L21/48 , H01L23/498 , H05K1/03 , H05K3/24
CPC分类号： H01L23/49866 , H01L21/4846 , H05K3/246 , H01L2924/0002 , H05K1/0306 , H05K3/244
摘要： Disclosed herein is a method of making a surface structure on a ceramic substrate capable of suppressing diffusion of Ni to an Au plating layer and of reducing the necessary thickness of the Au plating layer. A metallized layer (12), Ni layer (13) and Au layer (14) are formed in this order on a surface of a ceramic substrate (11). The substrate (11) is heated in a non-oxidizing atmosphere to cause an alloying reaction between the Ni layer (13) and the Au layer (14). Thereafter, an Au plating layer (16) is formed on the NiAu alloy layer (15). Since Ni in the NiAu alloy layer is not easily released, diffusion of Ni into the Au plating layer can be suppressed sufficiently. Therefore, the Au plating layer can be small in thickness, generally less than 1 micron.
摘要翻译：本文公开了一种在能够抑制Ni向Au镀层的扩散并减少Au镀层所需厚度的陶瓷衬底上形成表面结构的方法。在陶瓷基板（11）的表面上依次形成金属化层（12），Ni层（13）和Au层（14）。在非氧化性气氛中加热基板（11），使Ni层（13）与Au层（14）发生合金化反应。然后，在NiAu合金层（15）上形成Au镀层（16）。由于NiAu合金层中的Ni不易释放，所以能够充分地抑制Ni向Au镀层的扩散。因此，Au镀层的厚度可以小，通常小于1微米。

44. 发明授权

US5161305A Method of processing a circuit board 失效
标题翻译：处理电路板的方法
公开(公告)号：US5161305A
公开(公告)日：1992-11-10
申请号：US783637
申请日：1991-10-24
申请人： Akira Yamakawa
发明人： Akira Yamakawa
IPC分类号： H01C17/242 , B26F3/00 , H01C17/24 , H01C17/245 , H01L21/48 , H05K1/02 , H05K1/03 , H05K1/16 , H05K3/00 , H05K3/04
CPC分类号： H01C17/245 , H01L21/4807 , H01L21/4846 , H05K3/0044 , H05K3/04 , H05K1/0306 , H05K1/167 , H05K2201/09036 , H05K2203/0746 , H05K3/0052 , H05K3/0097 , Y10T29/49155 , Y10T83/0591 , Y10T83/364
摘要： In a method of processing a circuit board formed of an aluminum nitride sintered body, a substrate (100) formed of an aluminum nitride sintered body is prepared. A groove (101) and a hole (102) are formed in the substrate (100) formed of the aluminum nitride sintered body by directing a water jet to a surface of the substrate (100). Alternatively, interconnection layers (104) and an electric resistant body (103) connecting the interconnection layers (104) are formed on the surface of the substrate (100), and a notch portion (105) is formed in the electric resistant body (103) by directing the water jet to the surface of the electric resistant body (103). In this manner, processing of the substrate (100) and adjustment of an electrical resistance value of the electric resistant body (103) can be carried out precisely.

45. 发明授权

US06410468B1 Si3N4 ceramic, Si-base composition for production thereof and processes for producing these 有权
公开(公告)号：US06410468B1
公开(公告)日：2002-06-25
申请号：US09899736
申请日：2001-07-05
申请人： Seiji Nakahata , Akira Yamakawa
发明人： Seiji Nakahata , Akira Yamakawa
IPC分类号： C04B35591
摘要： A slurry Si-base composition comprising an Si powder having a thickness of a surface oxide film ranging from 1.5 to 15 nm, 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant, the Si-base composition having a pH value adjusted to 8-12. This slurry Si-base composition is produced by a process which comprises subjecting Si powder to oxidation treatment at 200 to 800° C. in air, adding 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant to the oxidized Si powder and performing such a pH adjustment that the resultant mixture has a pH value of 8 to 12. The slurry Si-base composition not only enables producing a ceramic of Si3N4 at a lowered cost without the need to install explosionproof facilities but also allows the obtained Si3N4 ceramic having a relative density of at least 96% and a flexural strength of at least 800 MPa can be obtained.

46. 发明授权

US06284690B1 Si3N4 ceramic, Si-base composition for production thereof and processes for producing these 失效
标题翻译： Si3N4陶瓷，用于制造的Si基组合物及其制造方法
公开(公告)号：US06284690B1
公开(公告)日：2001-09-04
申请号：US08708933
申请日：1996-09-06
申请人： Seiji Nakahata , Akira Yamakawa
发明人： Seiji Nakahata , Akira Yamakawa
IPC分类号： C04B35591
CPC分类号： C04B35/591
摘要： A slurry Si-base composition comprising an Si powder having a thickness of a surface oxide film ranging from 1.5 to 15 nm, 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant, the Si-base composition having a pH value adjusted to 8-12. This slurry Si-base composition is produced by a process which comprises subjecting Si powder to oxidation treatment at 200 to 800° C. in air, adding 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant to the oxidized Si powder and performing such a pH adjustment that the resultant mixture has a pH value of 8 to 12. The slurry Si-base composition not only enables producing a ceramic of Si3N4 at a lowered cost without the need to install explosionproof facilities but also allows the obtained Si3N4 ceramic having a relative density of at least 96% and a flexural strength of at least 800 MPa can be obtained.
摘要翻译：一种浆料Si基组合物，其包含Si粉末，其表面氧化膜的厚度为1.5至15nm，50至90重量％的水，0.2至7.5重量％的氧化物，烧结助剂和0.05〜3重量％的分散剂，所述Si基组合物的pH值调节至8-12。该浆料Si基组合物是通过以下方法制造的，该方法包括使Si粉末在空气中在200至800℃下进行氧化处理，加入50至90重量％的水，0.2至7.5重量％的氧化物的烧结助剂和0.05〜3重量％的分散剂与氧化的Si粉末进行这种pH调节，使得所得混合物的pH值为8〜12。浆料Si-碱组合物不仅能够制备 Si3N4的陶瓷，而不需要安装防爆设备，而且还可以获得所获得的相对密度至少为96％，弯曲强度至少为800MPa的Si 3 N 4陶瓷。

47. 发明授权

US5904993A Joint body of aluminum and silicon nitride and method of preparing the same 失效
标题翻译：铝和氮化硅接头体及其制备方法
公开(公告)号：US5904993A
公开(公告)日：1999-05-18
申请号：US648178
申请日：1996-05-21
申请人： Hisao Takeuchi , Koichi Sogabe , Takao Nishioka , Takashi Matsuura , Akira Yamakawa
发明人： Hisao Takeuchi , Koichi Sogabe , Takao Nishioka , Takashi Matsuura , Akira Yamakawa
IPC分类号： B23K20/00 , B23K20/02 , C04B37/02 , B23B15/04 , B22F7/00 , B23K1/19
CPC分类号： B23K20/023 , B23K2203/10 , Y10T428/12535 , Y10T428/12576 , Y10T428/31678
摘要： A joint body in which aluminum and silicon nitride are strongly joined with each other is provided at a low cost, thereby providing a lightweight part which is excellent in sliding property as a mechanical part of an internal combustion engine of an automobile or the like. The joint body includes a base material which is mainly composed of aluminum, and a member consisting of a silicon nitride sintered body which is substantially directly joined to the base material. A powdery or bulky base material (2) mainly composed of aluminum, and a member (1) consisting of a silicon nitride sintered body are charged in a mold and heated under pressurization, thereby joining the same with each other.
摘要翻译： PCT No.PCT / JP95 / 01870 Sec。 371日期：1996年5月21日 102（e）日期1996年5月21日PCT提交1995年9月20日PCT公布。公开号WO96 / 09266 日期：1996年3月28日以低成本提供铝和氮化硅彼此牢固地接合的接头体，从而提供作为汽车内燃机的机械部件的滑动性优异的轻质部件或类似物。接合体包括主要由铝构成的基材和由基本上直接接合到基材的氮化硅烧结体构成的部件。主要由铝构成的粉状或体积大的基材（2）和由氮化硅烧结体构成的部件（1）加入到模具中并在加压下加热，从而将它们彼此接合。

48. 发明授权

US5858523A Porous ceramic film and process for producing the same 失效
标题翻译：多孔陶瓷膜及其制造方法
公开(公告)号：US5858523A
公开(公告)日：1999-01-12
申请号：US538738
申请日：1995-10-03
申请人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
发明人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
IPC分类号： B01D71/02 , B01D39/20 , B01J35/04 , C04B38/00 , C04B41/45 , C04B41/52 , C04B41/81 , C04B41/85 , C04B41/89 , B32B29/02
CPC分类号： C04B41/009 , B01D39/2075 , B01D39/2086 , C04B41/4582 , C04B41/52 , C04B41/81 , C04B41/89 , C04B2111/00793 , Y10T428/249969 , Y10T428/24997 , Y10T428/24999 , Y10T428/252 , Y10T428/259 , Y10T442/69 , Y10T442/691
摘要： A porous ceramic film which is formed onto and bonded to an oxide layer provided on the surface of a porous base, the film composed of finely deposited particles comprising at least one compound including (a) at least one selected from the group consisting of Si, B and Al or the group consisting of the metals of the Groups IVa, Va and VIa and (b) at least one selected from the group consisting of C and N in which the particles are intertwined with each other and bonded to each other through the component of the oxide layer to form a three-dimensionally intertwined structure. This porous ceramic film is produced by forming the oxide layer on the base surface and then heating it to a temperature of at least of the liquid-phase formation temperature of the oxide layer in a gaseous atmosphere containing the above elements (a) and (b). The porous ceramic film has a high porosity, a good pressure resistance and a regulated pore size and is appropriate for a filter, a catalyst support, bioreactor or a structural material.
摘要翻译：一种多孔陶瓷膜，其形成在多孔基材的表面上并与其结合的氧化物层上，所述多孔陶瓷膜由精细沉积的颗粒构成，所述微粒包含至少一种化合物，所述至少一种化合物包括（a）选自Si， B和Al或由IVa，Va和VIa族金属组成的组，和（b）选自C和N中的至少一种，其中颗粒彼此缠结并通过氧化物层的组分以形成三维缠结的结构。该多孔陶瓷膜通过在基体表面上形成氧化物层，然后在含有上述元素（a）和（b）的气体气氛中将其加热至至少氧化物层的液相形成温度的温度）。多孔陶瓷膜具有高孔隙率，良好的耐压性和调节的孔径，适用于过滤器，催化剂载体，生物反应器或结构材料。

49. 发明授权

US5780374A High-strength porous silicon nitride body and process for producing the same 失效
标题翻译：高强度多孔氮化硅体及其制造方法
公开(公告)号：US5780374A
公开(公告)日：1998-07-14
申请号：US774612
申请日：1996-12-30
申请人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
发明人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
IPC分类号： C04B35/584 , C04B38/00 , C04B38/06
CPC分类号： C04B38/00 , C04B38/06
摘要： A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.
摘要翻译：高孔隙率和高强度多孔氮化硅体包括柱状氮化硅颗粒和含有2至15wt。至少一种稀土元素为基于氮化硅的氧化物的％，SiO 2 /（SiO 2 +稀土元素氧化物）的重量比为0.012〜0.65，平均孔径为3.5μm以下。多孔氮化硅体通过压制而制成，其包含氮化硅粉末，2〜15重量％％，基于氮化硅的氧化物，至少一种稀土元素和有机粘合剂，同时控制所述成型体的氧含量和碳含量; 并在包含氮气的气氛中在1650℃-2200℃下烧结所述成型体，得到由柱状氮化硅晶粒和氧化物结合相构成的三维缠结结构的多孔体，并具有SiO 2 /（SiO 2 + 稀土元素氧化物）重量比为0.012〜0.65。

50. 发明授权

US5756411A Sintered body of silicon nitride and method of producing the same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US5756411A
公开(公告)日：1998-05-26
申请号：US696823
申请日：1996-08-20
申请人： Seiji Nakahata , Akira Yamakawa , Hisao Takeuchi
发明人： Seiji Nakahata , Akira Yamakawa , Hisao Takeuchi
IPC分类号： C04B35/591
CPC分类号： C04B35/591
摘要： The invention reduces the time required for nitriding in the process of reaction sintering for production of a sintered body of silicon nitride, thereby improving productivity, and provides a sintered body of silicon nitride having sufficient compactness and high strength which can be produced by reaction sintering. The sintered body is Si.sub.3 N.sub.4 having an unpaired electron density of 10.sup.15 /cm.sup.3 to 10.sup.21 /cm.sup.3. The sintered body is produced through reaction sintering by using a Si powder having an unpaired electron density of 10.sup.15 -10.sup.20 /cm.sup.3, which is obtained by annealing a commercially available Si powder at temperatures of 300.degree. to 800.degree. C. in other than nitrogen atmosphere for 3-5 hours. In particular, the sintered body is produced by adding to the so obtained Si powder, together with a sintering assistant, an element having a valence of, particularly, from +1 to +3, the element having a covalent bond radius RM which bears such a relation with the covalent bond radius RSi of Si that (RM - RSi)/RSi
摘要翻译： PCT No.PCT / JP95 / 02679 Sec。 371日期1996年8月20日 102（e）日期1996年8月20日PCT 1995年12月26日PCT公布。 WO96 / 20144 PCT出版物日本1996年7月4日本发明减少了在制造氮化硅烧结体的反应烧结过程中氮化所需的时间，从而提高了生产率，并提供了具有足够的致密性和高强度的氮化硅烧结体，其可以是通过反应烧结制备。烧结体是不成对电子密度为1015 / cm 3至1021 / cm 3的Si 3 N 4。通过使用不成对电子密度为1015〜1020 / cm 3的Si粉末，通过反应烧结制造烧结体，其通过在氮气气氛以外的温度下在300℃〜800℃下退火市售的Si粉末而得到持续3-5小时。特别地，通过将如此获得的Si粉末与烧结助剂一起加入具有共价键半径RM的元素（特别是从+1至+3的价数）特别是这样的元素制备烧结体与RS的共价键半径RSi（RM-RSi）/ RSi <0.5的关系，或作为氮气发生剂的元素的化合物，并使所得复合材料进行反应烧结。

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