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    • 41. 发明授权
    • Thin film deposition reactor
    • 薄膜沉积反应器
    • US06884297B2
    • 2005-04-26
    • US10804912
    • 2004-03-19
    • Young Hoon ParkChoon Kum BaikHong Joo LimHo Seung Chang
    • Young Hoon ParkChoon Kum BaikHong Joo LimHo Seung Chang
    • H01L21/20C23C16/44C23C16/00C23C16/455
    • H01L21/6719C23C16/4412
    • Provided is a thin film deposition reactor, including a reactor block having a deposition space, a wafer block, a top lid for covering and sealing the reactor block, a showerhead for spraying a reaction gas on the wafer block, and an exhaust line through which gases are exhausted from the reactor block. A lower pumping baffle and an upper pumping baffle are stacked on a bottom of the reactor block between an outer circumference of the wafer block and an inner circumference of the reactor block. A lower pumping region is formed between the lower pumping baffle and an inner sidewall of the reactor block. An upper pumping region is formed between the upper pumping baffle and the inner sidewall of the reactor block. The deposition space is connected to the upper pumping region by a plurality of upper pumping holes formed in the upper pumping baffle, and the upper pumping region is connected to the lower pumping region by a plurality of lower pumping holes formed in the lower pumping baffle. The lower pumping region is connected to the exhaust line.
    • 提供了一种薄膜沉积反应器,其包括具有沉积空间的反应器块,晶片块,用于覆盖和密封反应器块的顶盖,用于在晶片块上喷射反应气体的喷头,以及排气管, 气体从反应器块排出。 下部抽吸挡板和上抽吸挡板堆叠在反应器块的底部上,在晶片块的外圆周和反应器块的内圆周之间。 在下泵送挡板和反应器块的内侧壁之间形成较低的泵送区域。 在上部泵送挡板和反应器块的内侧壁之间形成上部泵送区域。 沉积空间通过形成在上部泵送挡板中的多个上部泵送孔连接到上部泵送区域,并且上部泵送区域通过形成在下部抽吸挡板中的多个下部抽吸孔连接到下部泵送区域。 下泵送区域连接到排气管路。
    • 44. 发明授权
    • Method of depositing thin film and method of manufacturing semiconductor using the same
    • 沉积薄膜的方法和使用其制造半导体的方法
    • US07842606B2
    • 2010-11-30
    • US11720450
    • 2005-11-28
    • Ki Hoon LeeYoung Hoon ParkSahng Kyoo LeeTae Wook SeoHo Seung Chang
    • Ki Hoon LeeYoung Hoon ParkSahng Kyoo LeeTae Wook SeoHo Seung Chang
    • H01L21/4763H01L21/02
    • G03F7/091H01L21/0276H01L21/3146Y10S438/952
    • Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.
    • 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法,通过增加抗蚀性而具有高选择性,同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括(a)在基底的底膜上沉积碳抗反射膜; 和(b)在碳抗反射膜的表面或内部添加含有氮(N),氟(F)或硅(Si)的化合物,沉积a:N,aC:F 或aC:Si,具有高选择性,使用原子层沉积工艺,厚度为1至100nm。 因此,在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜,并且碳抗反射膜的密度和压缩应力增加,从而增加蚀刻选择性。
    • 50. 发明授权
    • Image sensor having self-aligned and overlapped photodiode and method of making same
    • 具有自对准和重叠光电二极管的图像传感器及其制造方法
    • US07180151B2
    • 2007-02-20
    • US11044422
    • 2005-01-27
    • Young Hoon Park
    • Young Hoon Park
    • H01L31/06
    • H01L27/14603H01L27/14609H01L27/14643H01L27/14689
    • An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.
    • 图像感测装置包括形成在基板上的栅极电介质层和形成在栅极电介质层上的转移栅极。 掩模层形成在传输栅极上,掩模层的宽度小于传输栅极的宽度,使得传输栅极的一部分从掩模层下方横向突出。 在衬底中形成光电二极管以与掩模层自对准并且在传输栅极下横向延伸,即与传输门重叠。 由于光电二极管与传输栅极的重叠,消除了光电二极管与传输门之间的偏移,从而消除了图像滞后现象。