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41. 发明授权

US07018560B2 Composition for polishing semiconductor layers 有权
标题翻译：用于研磨半导体层的组合物
公开(公告)号：US07018560B2
公开(公告)日：2006-03-28
申请号：US10634437
申请日：2003-08-05
申请人： Zhendong Liu , John Quanci
发明人： Zhendong Liu , John Quanci
IPC分类号： C09K13/06
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
摘要翻译：水性抛光组合物包含用于限制去除具有酸性pH的互连金属的腐蚀抑制剂。该组合物包括由R 1，R 2，R 3和R 4形成的含有机铵盐，是基团，R 1具有2至15个碳原子的碳链长度。含有机铵铵盐具有加速TEOS去除并降低至少一种选自由SiC，SiCN，Si 3 N 4 N和S 3组成的组中的至少一种涂层的去除的浓度， SiCO。

42. 发明授权

US09752228B2 Sputtering target for PVD chamber 有权
公开(公告)号：US09752228B2
公开(公告)日：2017-09-05
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

43. 发明授权

US08992741B2 Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target 有权
标题翻译：使用目标同步RF和DC电源进行超均匀溅射沉积的方法
公开(公告)号：US08992741B2
公开(公告)日：2015-03-31
申请号：US12188937
申请日：2008-08-08
申请人： Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
发明人： Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
IPC分类号： C23C14/35 , C23C14/54 , C23C14/34 , H01J37/34 , H01L21/02 , H01J37/32
CPC分类号： C23C14/54 , C23C14/3492 , C23C14/35 , C23C14/542 , H01J37/32027 , H01J37/32091 , H01J37/34 , H01J37/347 , H01L21/02266
摘要： In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.
摘要翻译：在等离子体增强的物理气相沉积反应器中，通过将RF和DCC功率施加到目标并且独立地调节RF和DC电源的功率电平来增强穿过工件的沉积速率的径向分布的均匀性。通过调整磁体在目标上方的高度，调整磁体在目标上方的轨道运动的半径，并提供目标的角度边缘表面，可获得进一步优化。

44. 发明授权

US08558299B2 Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming 有权
标题翻译：具有包括低电阻率钨的栅电极堆叠的半导体器件和形成方法
公开(公告)号：US08558299B2
公开(公告)日：2013-10-15
申请号：US13157164
申请日：2011-06-09
申请人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文所述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

45. 发明授权

US08491808B2 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅，氧化硅和氮化硅的衬底的方法
公开(公告)号：US08491808B2
公开(公告)日：2013-07-23
申请号：US12724685
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅，氧化硅和氮化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸盐化合物，其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质，其中R1，R2，R3，R4，R5，R6和R7中的每一个是具有式 - （CH 2）n - 的桥连基团，其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。

46. 发明授权

US08444728B2 Stabilized chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08444728B2
公开(公告)日：2013-05-21
申请号：US13494412
申请日：2012-06-12
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜20重量％的平均粒径为5〜50nm的研磨剂; 和0.001至1重量％的根据式（II）的金刚烷基物质：其中A选自N和P; 其中每个R 8独立地选自氢，饱和或不饱和的C 1-15烷基，C 6-15芳基，C 6-15芳烷基，C 6-15烷芳基; 并且其中式（II）中的阴离子可以是平衡式（II）中阳离子上的正电荷的任何阴离子。

47. 发明申请

US20120003834A1 Method Of Polishing Chalcogenide Alloy 审中-公开
标题翻译：抛光硫族化合物的方法
公开(公告)号：US20120003834A1
公开(公告)日：2012-01-05
申请号：US12828441
申请日：2010-07-01
申请人： Ja-Ho Koo , Zhendong Liu , Kaveri Sawant , Kancharla-Arun Kumar Reddy
发明人： Ja-Ho Koo , Zhendong Liu , Kaveri Sawant , Kancharla-Arun Kumar Reddy
IPC分类号： H01L21/306
CPC分类号： C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： The invention provides a method for chemical mechanical polishing of a substrate. The invention comprises providing a substrate, wherein the substrate comprises a chalcogenide phase change alloy and providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises, by weight percent, water, 0.1 to 30 abrasive, at least one polishing agent selected from 0.05 to 5 halogen compound, 0.05 to 5 phthalic acid, 0.05 to 5 phthalic anhydride and salts, derivatives and mixtures thereof and wherein the chemical mechanical polishing composition has a pH of 2 to less than 7. A chemical mechanical polishing pad polishes the substrate with the chemical mechanical polishing pad and the chemical mechanical polishing composition to selectively or non-selectively remove the chalcogenide phase change alloy from the substrate.
摘要翻译：本发明提供了一种用于基材的化学机械抛光的方法。本发明包括提供一种基材，其中该基材包括一种硫族化物相变合金并提供一种化学机械抛光组合物，其中该化学机械抛光组合物包含按重量百分比计的水，0.1至30种研磨剂，至少一种抛光剂， 0.05至5个卤素化合物，0.05至5邻苯二甲酸，0.05至5邻苯二甲酸酐及其盐，衍生物和混合物，其中化学机械抛光组合物的pH值为2至小于7.化学机械抛光垫用化学机械抛光垫和化学机械抛光组合物，以从衬底中选择性或非选择性地除去硫族化物相变合金。

48. 发明申请

US20110303960A1 LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 有权
标题翻译：具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD
公开(公告)号：US20110303960A1
公开(公告)日：2011-12-15
申请号：US13157164
申请日：2011-06-09
申请人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788 , H01L21/283 , C23C14/34 , H01L21/3205
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文所述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

49. 发明授权

US08071479B2 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08071479B2
公开(公告)日：2011-12-06
申请号：US12332816
申请日：2008-12-11
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of ≦100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I): wherein R is selected from C2-C20 alkyl, C2-C20 aryl, C2-C20 aralkyl and C2-C20 alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y≧1; and, wherein the chemical mechanical polishing composition has a pH≦5.
摘要翻译：在使用包含水的化学机械抛光组合物的介质金属和低k电介质材料中的至少一种的存在下，包括阻挡材料的基材的化学机械抛光的方法; 1至40重量％的平均粒度为＆amp; 100埃的研磨剂; 100纳米; 0.001〜5重量％的季铵化合物; 具有式（I）的材料：其中R选自C 2 -C 20烷基，C 2 -C 20芳基，C 2 -C 20芳烷基和C 2 -C 20烷芳基; 其中x是0至20的整数; 其中y是0至20的整数; 其中x +y≥1; 并且其中所述化学机械抛光组合物具有pH＆nlE; 5。

50. 发明授权

US08025813B2 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08025813B2
公开(公告)日：2011-09-27
申请号：US12617140
申请日：2009-11-12
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.
摘要翻译：一种用于基材的化学机械抛光的化学机械抛光组合物，其中所述基材包括氧化硅材料和氮化硅材料; 以及制造和使用化学机械抛光组合物的方法。化学机械抛光组合物包含作为初始成分的第一物质和第二物质中的至少一种; 其中所述第一物质是根据式I，其中所述第二物质是根据式II的研磨剂; 和水。

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