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    • 1. 发明申请
    • Method Of Polishing Chalcogenide Alloy
    • 抛光硫族化合物的方法
    • US20120003834A1
    • 2012-01-05
    • US12828441
    • 2010-07-01
    • Ja-Ho KooZhendong LiuKaveri SawantKancharla-Arun Kumar Reddy
    • Ja-Ho KooZhendong LiuKaveri SawantKancharla-Arun Kumar Reddy
    • H01L21/306
    • C09G1/02H01L45/06H01L45/144H01L45/1683
    • The invention provides a method for chemical mechanical polishing of a substrate. The invention comprises providing a substrate, wherein the substrate comprises a chalcogenide phase change alloy and providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises, by weight percent, water, 0.1 to 30 abrasive, at least one polishing agent selected from 0.05 to 5 halogen compound, 0.05 to 5 phthalic acid, 0.05 to 5 phthalic anhydride and salts, derivatives and mixtures thereof and wherein the chemical mechanical polishing composition has a pH of 2 to less than 7. A chemical mechanical polishing pad polishes the substrate with the chemical mechanical polishing pad and the chemical mechanical polishing composition to selectively or non-selectively remove the chalcogenide phase change alloy from the substrate.
    • 本发明提供了一种用于基材的化学机械抛光的方法。 本发明包括提供一种基材,其中该基材包括一种硫族化物相变合金并提供一种化学机械抛光组合物,其中该化学机械抛光组合物包含按重量百分比计的水,0.1至30种研磨剂,至少一种抛光剂, 0.05至5个卤素化合物,0.05至5邻苯二甲酸,0.05至5邻苯二甲酸酐及其盐,衍生物和混合物,其中化学机械抛光组合物的pH值为2至小于7.化学机械抛光垫用 化学机械抛光垫和化学机械抛光组合物,以从衬底中选择性或非选择性地除去硫族化物相变合金。